Wide Input Voltage Automotive Buck Regulators

The new Allegro Microsystems adjustable high-frecuency DC-DC step-down sitching regulators with an integrated high-side power MOSFET are ideal for power supply requirements of the lastest systems, The Allegro series A8568   provides up to 3.5 A output current while the A8587 has output current up to 2.0 A, both devices are automotive,  AEC Q100 qualified and incorporated with current-mode control for fast transient response.

The devices counts with a  wide input rage of 3.8 to 36V which makes both of them suitable for a  wide range of step-down applications including those in an automotive input environment. Battery-driven “keep-alive” applications benefits from the lowest to the highest range and operational current, both devices are incorporated with current mode control for fas transient control, are easy to manage and robustly handle.

These new regulators maintain high-efficiency across a wide range of loads in the PWM mode and incorporate pulse frequency modulation (PFM) as the load reduces. This in turn reduces switching and gate driver losses at light loads. Both the A8586 and A8587 incorporate frequency foldback to help prevent inductor current runaway during startup and provide enhanced dropout performance.

These new generation of regulators maintain high-efficency across a  wide range of loads in the pwm and incorporate pulse frecuency modulation (PFM) as the load reduces., this reduces the switching and gate driver losses at light loads.

Robust protection features makes them extensively safety for their uses, the current limit at the pulse by pulse and the hiccup mode-short-circuit protection makes them a great choice.

Negative Power-On-Reset (NPOR) function to indicate in-regulation and out-of-regulation status.

Insulated Gate Bipolar Transistor Modules

IGBT is the short term for Insulated Gate Bipolar Transistor, that is a three-terminal semiconductor device with a  huge bipolar current carrying capability, many designers think that IGBT has a CMOS i/p ad bipolar o/p characteristic voltage controlled bipolar device, that makes this device designed to make use of the benefits of both BJT and MOSFET Devices in the form of monolithic it combines the best qualities of both to obtain the better device in the market.

The IGBT Module can bes used in power electronics, particularly in PWM(Pulse Width Modulated), UPS (Un interruptible Power Supplies), SMPS (Switched-Mode Power Supplies), and other power circuits. It increases the efficiency, dynamic performance and reduces the level of the audible noise. It is similarly fitted in the of resonant mode converter circuits. Optimized IGBT is accessible for both low switching loss and low conduction loss.

IGBT in High Speed Drilling and Milling

When we talk about factories, places, vehicles, we sometimes don´t know that these manufacturing facilities are equipped with milling and drilling machines. In order to increase their performance it is necessary for them to employ high speed cutting technology, this makes them better  in every way possible in the cutting process, Milling spindles with extremely high rotational speed and great stiffness are required for high perfomance milling operations.

An active magnetic bearing must be used to meet these requirements for the previous milling needs said. The amplifier of the basic control circuit for an active magnetic bearing must provide sufficiently high voltage drop across the resistance of the magnet coil in order to get major stiffness and a  large duration while in the process of the machine.

To improve reliability and reduce costs, IGBT devices are used in the newly developed switching amplifier, this IGBT have been tested in a practical system of a  high speed milling spindle ( 35 KW/40,000rpm) consisting of an active magnetic bearing  for five axes.

Renesas Cuts Immersion Voltage in IGBTs

Renesas has shaved 200mV from the immersion voltage of its 650V IGBTs to expand power proficiency.

Said to be because of "ultrathin wafer innovation", run of the mill immersion voltage has dropped from 1.8V to 1.6V in 650V gadgets, and from 2.1V to 1.8V in 1,250V forms.

"There is an exchange off between immersion voltage and the high short out resilience," said the firm. "It has been hard to accomplish low misfortune alongside a high short out resilience."

In any case, it appears to have done it, with short out resilience up to 10µs, contrasted and 8µs in its practically identical prior items. "This guarantees dependability and strong execution in frameworks, for example, power conditioners for sun oriented force inverters," said Renesas.

For quicker exchanging, reverse exchange capacitance is roughly 10% down "by advancing the surface structure of the gadget".

The 13 IGBTs can be found in the RJH/RJP65S arrangement for 650V and RJP1CS arrangement for 1,250V.

Shipping organizations are wafer/chip and TO-247A bundle for the RJH65S arrangement.

Tests begin delivering this month, with large scale manufacturing planned to start in September 2012, scaling to 500,000 units/month by April one year from now.

Renesas likewise plans to discharge a line of units comprising of the new IGBTs with RL78 and RX groups of microcontrollers for engine and inverter control.

Mitsubishi makes all-SiC 3.3kV 1.5kA footing inverter

Scientists at Mitsubishi have made custom mosfets for an all silicon carbide 3.3kV 1.5kA dc to three-stage footing inverter for railroad trains, asserting the inverter to be a world first.

The organization has as of now worked a mixture outline with silicon IGBTs and 1.7kV SiC Schottkys on an underground prepare, which showed 38.6% force investment funds contrasted and the ordinary framework.

Custom 3.3kV 1.5kA SiC mosfets and Schottky diodes were made for the all-SiC extend, and incorporated with modules with one transistor and one diode. On the whole, the inverter has 16 modules. Exchanging misfortunes in the inverter are guaranteed to be 55% superior to the silicon identical.

To get conduction misfortunes as low as proportional silicon IGBTs, mosfet cell structure was advanced, and the JFET area ('JD' in the chart) of the mosfets was n-doped by high vitality nitrogen implantation to lessened JFET on-resistance at high temperature.

For stable torrential slide breakdown (~4kV), a field-constraining ring structure was produced for edge end in both gadgets and devices.

Additionally for strength, the converse diode inalienable in the mosfet structure was upgraded for a long working life conveying current nearby the Schottky, instead of waiting be shorted by the Schottky.

Last mosfet dynamic territory is 0.83cm2, and the Schottkys every spread 0.74cm2.

Report '3.3kV/1500A force modules for the world's first all-SiC footing inverter' in the Japanese Journal of Applied Physics depicts the SiC semiconductors.

The examination is likewise highlighted in the September 2015 issue of the JSAP Bulletin, from which the charts are taken.

Mitsubishi Electric to Discharge Institutionalized HVIGBT Module X-Series

Mitsubishi Electric Corporation declared today that it has built up a cutting edge power module called X-Series New Dual HVIGBT module for footing and electric force applications in overwhelming commercial ventures. The new module highlights higher force thickness and proficiency for inverters and in addition an institutionalized bundle that considers an adaptable configuration of inverter frameworks.

Tests of the 3.3kV (LV100) variant of the New Dual module will be accessible for transportation from March 2017. That will be trailed by 1.7kV, 3.3kV (HV100), 4.5kV and 6.5kV variants in a specific order from 2018 onwards. The organization additionally plans to add a lower-than 1.7kV rendition to the lineup later on.

High-control modules are key gadgets for controlling force transformation in electronic frameworks in an extensive variety of force classes from a few kilowatts up to a few megawatts. Up to this point, modules with the greatest voltage rating of up to 6.5kV and a most extreme current rating of a few thousand amperes have been monetarily accessible.

The New Dual HVIGBT module will fulfill interest for productive, high power thickness semiconductor gadgets with a scope of current and voltage evaluations, while adding to higher force yield and proficiency in inverters by embracing the most recent seventh-era IGBTs and RFC diodes. Then, the institutionalized bundle measurements will permit makers of mechanical gadgets to disentangle plan and secure numerous hotspots for inverters.

Item Features:

1. Contributing to high vitality effectiveness and high power thickness •The seventh-era IGBTs receiving CSTBTTM and RFC diodes acknowledge low power misfortune in inverter frameworks.

• Improved bundle innovation and low parasitic inductance empower the greatest execution.

• Three AC fundamental terminals on the LV100 bundle spread and even out current thickness, adding to expanded inverter capacity.

2. Common edge size backings more various inverter setups and limit •LV100 and HV100 modules have a typical bundle plan.

• Simple, standard associations take into consideration ideal framework outline and a scope of current evaluations.

• Lineup ranges from 1.7 to 6.5kV.

• Improved adaptability and versatility for framework design.

3. Contributing to higher configuration productivity by the utilization of an institutionalized new bundle

• Compatible with terminal and connection areas of Infineon Technologies AG (Germany) items.

Fuji Electric Announces Release of New High-Speed Discrete IGBT Series

January 20, 2016

Edison, NJ – Fuji Electric has added a new lineup of power semiconductors to its product portfolio with the “High-Speed W” Series of high-speed discrete IGBTs*.   The new product series utilizes a thinner IGBT chip for miniaturization, thereby reducing power loss (turnoff loss) in switching operation by approximately 40% compared to conventional products (High-Speed V Series). This contributes to energy saving and power cost reduction of the devices on which the products are mounted. Loss in switching operation has also been reduced (suppressed heat generation) for compatibility with higher switching frequencies (20 to 100 kHz) compared to conventional products (around 20 kHz).

 “The introduction of the High-Speed W Series is a valuable addition to our product portfolio as it offers our customers advanced features that they need to compete in today’s market,” said Jeff Knapp, General Manager of Fuji Electric’s Semiconductor Dept. “The new IGBT allows the ability to downsize the peripheral parts such as coils and transformers within the system and therefore contributes to the overall downsizing of the equipment itself, leading to a reduction in the total cost of ownership.”

The company cites the increasing global demand for energy in recent years as the driving force behind the development of the High-Speed W Series.  The need for the energy-saving performance of industrial and communications equipment, as well as the demand for downsizing and space-saving of the equipment itself spurred them to introduce a high-speed discrete IGBT that responded to these needs.

*IGBT: Insulated Gate Bipolar Transistor

About Fuji Electric Corp. of America

Fuji Electric Corp. of America is a wholly owned subsidiary of Fuji Electric Co., Ltd., and has been responsible for sales and distribution of the company’s products since 1970.  Fuji Electric Co., Ltd. began developing power electronics equipment in 1923, and is a global leader in industrial products ranging from semiconductors, HMIs, power supply, and power generation equipment to AC drives and uninterruptible power systems.  For more information please visit www.americas.fujielectric.com or follow us on Twitter @FujiElectricFEA.

Media Contact:

Doretta Caprarola

Fuji Electric Marketing Manager

(201) 490-3933

dcaprarola@fujielectric.com

Sales Contact:

Jeff Knapp

Fuji Electric General Manager

(201) 880-2145)

jknapp@fujielectric.com

MOSFET and IGBT to Motive Power Semiconductors Market

INFINEON is still the pioneer in the force semiconductors business, with huge development from the IGBT and MOSFET segments. Another report from The Information Network demonstrates that Infineon has lost the lead on the MOSFET segment, worth US$6 billion, to International Rectifier. In the IGBT segment, Mitsubishi Electric overwhelms, well in front of Infineon. Be that as it may, Infineon's consolidated incomes in both areas was sufficient to keep up its lead in the general force semiconductor market, as indicated by the new report, Next-Generation Power Semiconductors: Markets Materials, Advancements as of late distributed by The Information Network.

As per the report, the IGBT segment will see the most grounded development inside the force semiconductor market, with a determined normal yearly development of 4.9 percent, going from $3.1 billion in 2012 to $4.0 billion in 2017. Power MOSFETs are no sleepers either, holding the biggest piece of the pie in 2013, because of its quick exchanging speed, close immaculate entryway impedance, quick exchanging speed, magnificent solidness, and a moderately low on-state resistance.

The Information System ventures 3.3 percent normal yearly development of the MOSFET market, from $5.4 billion in 2012 to $6.3 billion in 201As per the report, the IGBT segment will see the most grounded development inside the force semiconductor market, with a determined normal yearly development of 4.9 percent, going from $3.1 billion in 2012 to $4.0 billion in 2017.

Power MOSFETs are no sleepers either, holding the biggest piece of the pie in 2013, because of its quick exchanging speed, close immaculate entryway impedance, quick exchanging speed, magnificent solidness, and a moderately low on-state resistance.

The Information System ventures 3.3 percent normal yearly development of the MOSFET market, from $5.4 billion in 2012 to $6.3 billion in 2017.

The business sector scene is because of progress, be that as it may, subsequent to Infineon has gained Universal Rectifier. The joined organizations will hold more than a 27 percent offer of the force semiconductor market in 2014, which is well in front of the following biggest contender, Fairchild Semiconductor, who holds not exactly a 10 percent offer, and Mitsubishi Electric, with not exactly a 9 percent offer.

Mitsubishi IGBT Modules for Sun Powered

Mitsubishi has declared its 6th era of IGBT modules for force converters.

"The 6th era transporter put away trench-entryway bipolar transistor lessens authority emitter immersion voltage by roughly 15% contrasted with fifth-era IGBT modules, disconnection voltage is raised to 4kV, door capacitance is decreased, and most extreme intersection temperature is raised by 25°C to 175°C," said the firm.

Be that as it may, they are the same 150x166x34mm size, shape and stick setup.

Applications are for the most part expected in substantial limit photovoltaic and wind power-era frameworks, furthermore in huge limit modern inverters and uninterruptible PSUs.

CM900DUC-24S: 1.2kV, 900A, 1.55V immersion

CM1400DUC-24S: 1.2kV, 1kA, 1.55V immersion

CM1000DUC-34SA: 1.7kV, 1.4kA, 1.9V immersion

Shipments will start toward the end of May.

Infineon Reports HybridPACK Double Sided Cooling for October 2016

Infineon Technologies AG displays its most recent force module family HybridPACK™ Double Sided Cooling (DSC) for half and half and electric vehicles at the PCIM 2016 tradeshow. The new power modules have measurements of 42 mm x 42.4 mm x 4.77 mm. They target HEV applications, for example, primary inverters and generators with an ordinary force scope of 40 to 50 kW. So as to backing higher force, they can be utilized as a part of parallel setups.

Infineon Technologies AG presents its latest power module family HybridPACK™ Double Sided Cooling (DSC) for hybrid and electric vehicles at the PCIM 2016 tradeshow. The new power modules have dimensions of 42 mm x 42.4 mm x 4.77 mm. They target HEV applications such as main inverters and generators with a typical power range of 40 to 50 kW. In order to support higher power, they can be used in parallel configurations.

With just 15 NH, the stray inductance is low while blocking voltage was expanded to 700 V. Both variables bolster the advancement of inverter frameworks with lessened exchanging misfortunes of around 25 percent and high productivity. On account of the incorporated disengagement, the module can be straightforwardly connected to a cooler without outside separation accordingly streamlining framework coordination. Each coordinated IGBT chip is furnished with an on-chip current sensor for overcurrent security. Likewise, an on-chip temperature sensor gives derating and quick close off if there should arise an occurrence of over-temperature. The immediate and exact detecting enhances framework observing. It additionally streamlines the practical security engineering of car framework suppliers and auto producers.

By joining twofold sided chip cooling with electrical confinement of the warmth sinks, the warm resistance R thJC of the HybridPACK DSC is altogether diminished to 0.1 Kelvin/Watt (K/W). In examination, today's energy module HybridPACK 1 has a warm resistance of 0.12 K/W. The HybridPACK DSC module innovation additionally enhances the electrical execution. Stray inductance is one noteworthy parameter, characterized by module size and the cautious directing of the present way through the module. The HybridPACK DSC estimation of just 15 nH is around 40 percent lower contrasted with reference modules. The outcome is a lessening of exchanging misfortunes by 25 percent.

Utilization of IGBTs in Mechanical Division

IGBTs have discovered boundless applications in the business. Squirrel-confine actuation engines are overwhelming for AC modern drives the world over because of their roughness and minimal effort. Customizable velocity drives are currently normally utilized as a part of request to accomplish a high productivity. Three-stage voltage-source inverters are the staggering most loved topology for mechanical drive application evaluated for under 2 Megawatts.

Jahns and Blasko state: "Amid the previous decade, IGBTs bundled in conservative plastic force modules have quickly extended their voltage and current appraisals so that they now rule about the majority of the new mechanical drive inverter plans… actually, numerous new IGBT inverters are planned with no snubbers by any stretch of the imagination. This methodology has the benefit of sparing cost, space, and misfortunes in the inverter – every constructive outcome."

Huge mechanical engines are generally utilized as a part of commercial enterprises, for example, (an) assembling; (b) water and waste administration; (c) nourishment preparing; (d) petroleum: (e) lumber; (g) plastics; (h) chemicals; (i) printing press; and (j) steel. For modern frameworks with force evaluations of up to 25 MW, 'IGBTs have turned out to be totally prevailing for low voltage converters and are progressively utilized for medium –voltage converters' as per Siemens.

The utilization of IGBTs is persuaded by the vitality funds potential offered by variable-speed drives in moving factories and material plants. The utilization of IGBT-based variable-speed drives in material plants has been found to decrease commotion while giving the advantages of diminished drive size, lessened expense of operation, and expanded drive execution. The move from DC engines to AC engines by the metal-handling industry has been reported. Applications, for example, completing plants, roughing factories, roller-tables, loopers, shears, and so on, can now all be served utilizing AC engines.

Infineon's S5 IGBT is proficient and strong

Infineon Technologies has discharged the S5 IGBT range, taking into account the ultra-slim wafer TRENCHSTOP 5 IGBT. This reach has been created particularly for AC/DC vitality transformation in mechanical applications changing up to 40 kHz, regularly to be found in Photovoltaic Inverters or Uninterruptible Power Supplies.

The S5 gadget is said to highlight productivity levels up to and past 98% giving high vitality yields for sun powered cell establishments and lessened framework costs. It is additionally guaranteed to convey expanded levels of heartiness and quality to help planners in accomplishing up to 20 years of operational lifetime.

The Discrete IGBT highlights enhanced changing conduct to diminish circuit intricacy and general framework costs by killing the need of capacitors and Zener diodes. Likewise, expanded vigor and quality levels are said to be improved further with a 25% expansion in surge current taking care of capacity. The gadget has an ordinary immersion voltage VCE (sat) of 1.60V at 175°C, which means high proficiency can be kept up amid high temperature operations.

Creator

Tom Austin-Morgan