Scientists at Mitsubishi have
made custom mosfets for an all silicon carbide 3.3kV 1.5kA dc to three-stage
footing inverter for railroad trains, asserting the inverter to be a world
first.
The organization has as of now
worked a mixture outline with silicon IGBTs and 1.7kV SiC Schottkys on an
underground prepare, which showed 38.6% force investment funds contrasted and
the ordinary framework.
Custom 3.3kV 1.5kA SiC mosfets
and Schottky diodes were made for the all-SiC extend, and incorporated with
modules with one transistor and one diode. On the whole, the inverter has 16
modules. Exchanging misfortunes in the inverter are guaranteed to be 55%
superior to the silicon identical.
To get conduction misfortunes as
low as proportional silicon IGBTs, mosfet cell structure was advanced, and the
JFET area ('JD' in the chart) of the mosfets was n-doped by high vitality
nitrogen implantation to lessened JFET on-resistance at high temperature.
For stable torrential slide
breakdown (~4kV), a field-constraining ring structure was produced for edge end
in both gadgets and devices.
Additionally for strength, the
converse diode inalienable in the mosfet structure was upgraded for a long
working life conveying current nearby the Schottky, instead of waiting be
shorted by the Schottky.
Last mosfet dynamic territory is
0.83cm2, and the Schottkys every spread 0.74cm2.
Report '3.3kV/1500A force
modules for the world's first all-SiC footing inverter' in the Japanese Journal
of Applied Physics depicts the SiC semiconductors.
The examination is likewise
highlighted in the September 2015 issue of the JSAP Bulletin, from which the
charts are taken.
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