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Showing posts with label Application of IGBT. Show all posts
Showing posts with label Application of IGBT. Show all posts

Tuesday, August 29, 2017

IGBT Performance Reaches New Levels

IGBTs (Integrated Gate Bipolar Transistors) have now been around for 30 years or so and have played a very useful role in their capacity as a key component in power switches, particularly at high voltages. However, the use of IGBTs has been eclipsed somewhat by power MOSFETs for applications where the switching frequency is at the high end of the power spectrum – greater than 100 kHz. However, that has now changed. IGBT research and development has come up with improvements in IGBT design which mean that these components are now able to handle the frequency range and temperatures which are being demanded by more and more applications.

The new IGBT design is an extremely thin IGBT, fabricated on a wafer structure, which is reported to have a blocking voltage of 650 volts. It is designed for DC to DC conversions of up to 200 kHz. These ultra rapid operating IGBTs are now more than a match for their competitors in the high end semiconductor market.

The superiority of SJ MOSFETS challenged by new version IGBTs

Up to the recent development phase of these ultra thin wafer IGBTs, superjunction (SJ) MOSFETS have been the semiconductor of choice for those applications requiring tolerance to both high temperature and high switching frequency. SJ MOSFETS have actually had a better performance record for these sorts of applications than conventional power MOSFETS as well as IGBTs which have lagged behind in performance. The new IGBT design is touted as matching the performance level of SJ MOSFETS in terms of switching capacity but the main advantage is that the manufacturing process is simpler, making these components much more competitively priced compared to their competitors.

Another comparison between the new IGBTs and SJ MOSFETS gives the IGBTs a clear lead in terms of their Tjmax, which is 175oC, compared to that of the SJ MOSFETS at 150oC.

IGBT structure improvements

The key improvement of these IGBTs is their fabrication process. They are fabricated on an extremely thin wafer of around 70μm using a punch through structure. This design permits the components to incorporate a collector which is only lightly doped. This means that they have less stored charge and consequently much improved switching performance – as has already been mentioned. They are rated up to 200 kHz, which is a doubling of the performance of their predecessors.

One of the inherent problems inherent in older style IGBTs was the fact that electron irradiation or metal doping was used to enhance switching speed. The design has the in-built problem that as the operating temperature increases, the current tends to leak. This limitation has meant that IGBT have had a limited usage role when the Tjmax has been above anything like 150oC. The improvements in design have meant that temperatures up to 175oC and beyond are now tolerated.

At this temperature the leakage of current is very much reduced compared to older style GBT designs. The new style IGBTs have a noticeably higher cell density which has a knock on effect on various other component properties. The lower voltage drop also accompanies a smaller gate capacitance. This combination means that the minimal internal gate resistance still means that the components are capable of the reported doubling of switching speed.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

www.USComponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.


Friday, August 25, 2017

IGBT in Vacuum Cleaners

A vacuum cleaner is an appliance that uses an air pump to create a partial vacuum to suck up dust and dirt from floors, and other surfaces. The dirt is collected by a dust-bag for future disposal. Hubert Cecil Booth invented the motorized vacuum cleaner in 1901. Since then, their use has proliferated and vacuum cleaners are now very commonly used in homes on a regular basis to maintain a healthy living environment. Manufacturers of vacuum cleaners include Eureca, Hoover, Bissell, and Dyson. In the past, universal motors were mostly used for vacuum cleaners due to high operating speed with low cost. However, these motors use a mechanical brush which wears out at high speeds limiting the performance. Modern vacuum cleaners with higher output power (suction) are designed using switched reluctance motors. The power circuits used for operation of the switched reluctance motor in vacuum cleaners. These circuits utilize IGBTs to overcome the difficult start-up problem for switched reluctance motors and for maintaining a high operating speed. The author’s state: “Its lifetime is extended 4 times than that of conventional motor and its suction power is increased 20% at the same volume of conventional universal motor”.

Tuesday, August 8, 2017

IGBT with Induction Rice Cooker

Rice is the first & foremost food for billions of people around the world, especially in Asian countries such as China, India, and Japan, with mass populations. According to Asian Rice Foundation, “Rice is arguably the world’s most important food. It is the second most widely cultivated cereal in the world, after wheat, and is a staple food of over half the world’s population. Rice can be cooked in a variety of ways, including boiling, baking, roasting, frying, and pressure-cooking. Cooking rice in an automatic rice cooker is becoming very popular, as it ensures consistent results and cooking instruction is much simpler to follow”. Many Asian companies have developed rice cookers based up on the induction heating principle. The induction heating can be accomplished by using an induction cooking plate or preferably by using an induction rice cooker. Two types of circuit topologies have been explored for the induction rice cooker. First one is the half-bridge series resonant converter and another is the quasi-resonant converter. The series resonant converter has the advantages of stable switching, low cost, and streamline design. The quasi-resonant converter has the advantage of a smaller design with reduced heat sink. The quasi-resonant converter is more widely used. Due to the large market for these appliances, some semiconductor companies have developed IGBT products optimized for this market for the quasi-resonant converter topology. IGBTs feature a robust and cost effective Field Stop (FS) trench construction, and provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. IGBTs are well suited for this type of resonant or soft switching applications.

Friday, July 28, 2017

Use of IGBT in Static UPS Systems

The best way to protect electronic equipments from power problems is using UPS. UPS units have different sizes, from little desktop system that shields an individual PC to massive UPS that can supply power to a whole building. Nearly every organization has a power safeguard necessity, ranging from companies with computer UPS provides power to your equipment in the case of an entire power collapse, giving you opportunity to save data and close files. At a more commencing level, the UPS conditions and filters networks to hospitals, airports, oil rigs and anywhere where uninterrupted power is must. Today maximum industries are using UPSs to save their core business against mains failures, mains supply fluctuations, power surges, and other troubles in the electrical supply. The option of picking a Rotary or Static UPS for industrial applications has become contentious and the myths require rectification.


Over recent years, Static UPSs have captured a large share of the UPS market when compared to the Rotary type, although Rotary UPSs still sustain popularity in industrial environments where ratings are in excess of 800kVA. The drawback is however, that Rotary technology is usually 30% more costly than the substitute Static offerings. Now-a-days, Static UPSs are a major rival for industrial installations, and the conveniences and benefits they offer, have seen consultants considering their design criteria from Rotary to Static technology. Outward appearances and inverters of Static UPS have changed amazingly in modern years with thyristor technology being replaced with IGBT technology. This recent technology has assisted notably to enhance the potency and managing of non-linear loads (computers and SMP type loads) with excessively low voltage distortion. With thyristor technology, peaks of the voltage wave form were frequently flattened, whereas this does not happen with the more recent IGBT technology. A moreover advantage of IGBT is that it minimizes the size of the inverter stacks and makes allowance for repairs to be done more effortlessly. And, owing to digitally controlled UPS design and growth in the IT arena, it is now very simple to monitor UPSs remotely from a different site or even from another country.

Friday, July 21, 2017

Sistema de sensores de posición del rotor para el control del motor sin escobillas en IGBTS

Los motores sin escobillas se utilizan frecuentemente en aplicaciones (H) EV. Estos motores altamente eficientes se basan en sensores de posición del rotor rápidos y precisos para conmutación, ya que estos parámetros del sensor tienen un impacto significativo en el comportamiento de arranque, la dinámica, la ondulación del par y la eficiencia. Existen diferentes principios para detectar la posición del rotor: resolución electromecánica (inductiva) y magnética. Los sistemas de sensores basados en resolver las problematicas de los transitores tienen algunas limitaciones (salida analógica, circuito complejo, altos costes del sistema, limitaciones de espacio, sensibilidad a campos perdidos y tolerancias de posicionamiento, etc.).


La familia de microcontroladores AURIX de 32 bits, con su ADC delta-sigma para realizar la generación de señales portadoras y la codificación basada en software, ya ayuda a ahorrar el IC de resolución externa y, por lo tanto, el coste del sistema en un 20%. Por otro lado, los sensores de ángulo resistente a magneto (xMR) con tecnología AMR (Anisotropic-Magneto-Resistance) o GMR (Giant-Magneto-Resistance) ofrecen una precisión de alta precisión, combinada con una baja sensibilidad frente a las tolerancias de posición.

Thursday, July 20, 2017

ROHM LANZA SU 3era generacion de IGBT

Los semiconductores de potencia, entre ellos los IGBT, están ganando aceptación debido a su implementación en muchos tipos de aplicaciones de alta tensión. Sin embargo, se espera que estos componentes alcancen una alta eficiencia y fiabilidad además de mantener unos bajos niveles de pérdidas. Al ampliar su gama existente, formada por IGBT para alta corriente e IGBT con una menor tensión de saturación y una conmutación más rápida, Rohm presenta ahora su 3ª generación de IGBT para una alta eficiencia. Los nuevos dispositivos utilizan una estructura de oblea más fina, así como tecnologías de atenuación de campo y estructura propia de puerta de zanja para obtener las prestaciones más avanzadas con el fin de cubrir la creciente necesidad de conmutación a alta frecuencia. Los nuevos IGBT de 650V de 3ª generación de Rohm, basados en una estructura avanzada de atenuación de campo, ofrecen un menor gradiente de concentración de portadores en la región de deriva que permite mejorar la distribución de los portadores. Gracias a ello es posible reducir la tensión de saturación y aumentar la velocidad de conmutación, logrando así un excelente compromiso entre la tensión de saturación y las pérdidas en el paso a corte, a diferencia de las soluciones convencionales.

Wednesday, July 19, 2017

IGBT with Induction Cooker

The inductive cook top creates a flat smooth surface that is easier to clean making it attractive to consumers. An induction cooker transfers electrical energy by induction from a coil of wire into any pot made of material which is electrically conductive and ferromagnetic. A coil of wire is mounted under the cooking surface and a large alternating current is passed through it to transfer power to the pot. When an electrically conductive pot is brought close to the cooking surface, the magnetic field induces an electrical current in the pot.

The current flowing through the electrical resistance in the pot causes electrical power to be dissipated as heat. The heating of the pot can be used for cooking the food. Induction cook tops have become very popular displacing most resistive heated cook tops. The power circuit used to deliver power to the pot via the coil must operate at a relatively high frequency of 25-50 kHz when compared with motor drive inverters. In order to reduce the switching losses in the IGBTs, the typical circuit topology is based up on resonant converters. Soft-switching circuit operation greatly reduces power losses during the switching transient in IGBTs providing high efficiency circuit operation. Many companies have developed optimized IGBT structures for this application due to the large market size.

Wednesday, July 12, 2017

El Convertidor de Frecuencia del Sistema Proporciona una Solución Completa para Aplicaciones de Media Tension

El convertidor de frecuencia del sistema proporciona una solución completa para aplicaciones de media tensión PARTE 1 La Serie MVW3000 de variadores de velocidad de WEG ha presentado nuevos aparatos con muchisimas funciones tales como: El variador de velocidad variable de media tensión MVW3000, que cuenta con una eficiencia, densidad de potencia y fiabilidad extremadamente alta, se vende como un sistema completo integrado en un armario de distribución. WEG ha presentado tambien en la serie MVW3000 de variadores de velocidad para voltajes de 2.3kV a 8kV y niveles de potencia de 28 kW a 2.400kW. Esta familia de dispositivos está construida con tecnología multinivel y puentes H en cascada (CHB). La topología multinivel se basa en la conexión en serie de tres a diez módulos de alimentación de baja tensión (690 V) con convertidores de salida IGBT en configuración de puente en H, dependiendo de la tensión de salida. Esto permite alcanzar niveles de voltaje en la gama de voltaje medio utilizando componentes de baja tensión estándar probados (diodos, IGBT y condensadores de película de plástico) de una manera rentable. Como característica especial, el MVW3000 se suministra como un sistema completo integrado en un armario de distribución, incluyendo aislador de media tensión, fusibles, transformador de alimentación multinivel y convertidor de frecuencia "El actual voltaje y rango de potencia es sólo la primera etapa en la evolución del producto.

Mayores tensiones y niveles de potencia ya están disponibles bajo petición ", dijo Johannes Schwenger, jefe de sistemas de control de producto de baja tensión y media tensión de Europa en WEG. "El MVW3000 es una solución todo-en-uno de alto rendimiento que elimina la necesidad de aparatos de conmutación de media tensión adicionales. Este sistema de transmisión de velocidad variable cuenta con excelentes parámetros de entrada y salida, eficiencia energética y alta disponibilidad, junto con un fácil mantenimiento, modularidad y manejo suave del motor. Esto hace que este sistema de accionamiento de velocidad variable sea el complemento ideal para todos los motores de media tensión comercialmente disponibles y la elección perfecta para proyectos de retrofit gracias a su voltaje de salida virtualmente sinusoidal ", si deseas saber mas de estos nuevos implementos acompañanos en la parte 2 de este articulo. El sistema de accionamiento de velocidad variable MVW3000 proporciona un rendimiento de conducción extremadamente alto. El factor de potencia de red es superior a 0,95 en toda la gama de revoluciones del motor, sin ningún filtro de armónicos adicional o condensadores de compensación. La arquitectura de dispositivo integrada proporciona unas cifras de distorsión armónica de red sobresalientes para corriente y tensión (THD I / V y TDD) según IEEE 519, IEC 61800-3 y G5 / 4-1. El dispositivo cumple con los límites establecidos en estas normas, incluso en su configuración básica. El rendimiento del inversor, incluido el transformador, supera el 95 por ciento en toda la gama de velocidad del motor y es superior al 96 por ciento con niveles de carga superiores al 40 por ciento. El circuito de carga para el transformador de potencia multinivel asegura la magnetización del núcleo del transformador sin corrientes de arranque y una carga suave de los condensadores de enlace de CC para la etapa del inversor. El transformador de potencia permite la adaptación de la tensión de red a la tensión de salida del motor y la reducción de la tensión de modo común en el devanado del motor.


También reduce las corrientes de modo común a través de los cojinetes del motor para maximizar la vida del rodamiento. Las interfaces entre la CPU del convertidor de frecuencia y la etapa de potencia para el control IGBT, la supervisión de la temperatura, la realimentación de la tensión y la realimentación de la corriente se implementan utilizando fibra óptica para aumentar la inmunidad al ruido y proporcionar un aislamiento efectivo entre las secciones de control y potencia. Las etapas de potencia (puentes H) están construidas con condensadores de película de plástico, fusibles semiconductores y una función de bypass automático del inversor para proporcionar una mayor disponibilidad del sistema en caso de fallo. El voltaje y la corriente de salida prácticamente sinusoidales reducen la disipación de potencia, las vibraciones y la pulsación de par en el motor. Con el fin de mejorar la fiabilidad y la disponibilidad del sistema, el MVW3000 está equipado con dispositivos de protección del motor para la protección contra sobrecarga, sobrecalentamiento y bloqueo del rotor del motor. Las temperaturas de la etapa de potencia y del transformador también se monitorean constantemente. Como sistema de empaque, el MVW3000 simplifica la instalación y puesta en marcha. Las etapas de potencia de enchufe facilitan el mantenimiento y el reemplazo rápido. Con dimensiones de 3.900 x 2.210 x 1.100 mm (An x Al x D), el sistema de accionamiento de velocidad variable también tiene una pequeña huella. Además, opcionalmente puede equiparse con todos los protocolos de comunicación industriales más habituales, incluyendo Modbus, Profibus, Devicenet y Ethernet.

Tuesday, May 9, 2017

Empresa IXYS lanza al mercado 1700V y 2500V XPT™

IXYS Corporation (NASDAQ: IXYS), fabricante de semiconductores de potencia y circuitos integrados para aplicaciones de eficiencia energética, gestión de potencia y control de motores, ha anunciado hoy el lanzamiento de 1700V y 2500V XPT ™ IGBT para aplicaciones de administración de energía. Con las clasificaciones actuales que van desde 26A a 178A, los dispositivos son bien adecuados para alta tensión ("HV"), tambien inclutyen aplicaciones de alta velocidad de conversión de energía. A su  vez están disponibles dispositivos que están empaquetados con diodos rápidos antiparalelos.

IXYS tiene una larga trayectoria en la introducción de IGBTs de vanguardia y ha sido pionero en el diseño y aplicaciones de IGBT HV en la gestión de energía, especialmente en los mercados de transporte, médicos e industriales. Diseñados con la tecnología patentada IXYS Extreme-Light Punch-Through (XPT ™) y los procesos IGBT de última generación, estos nuevos dispositivos muestran cualidades tales como resistencia térmica reducida, baja corriente de cola, baja pérdida de energía, Velocidad. Además, gracias al coeficiente de temperatura positivo de su tensión en el estado, los nuevos IGBTs de alto voltaje se pueden utilizar en paralelo, lo que proporciona soluciones rentables en comparación con los dispositivos de baja tensión conectados en serie. Esto resulta en consecuencia en la reducción de los circuitos de accionamiento de compuerta asociados, simplicidad en el diseño y mejora en la fiabilidad del sistema global.

Los diodos opcionales de recuperación rápida co-embalados tienen un tiempo de recuperación inversa bajo y se optimizan para producir formas de onda de conmutación suaves y interferencia electromagnética (EMI) significativamente más baja.

Hay una serie de alto voltaje ("HV"), de alta velocidad de aplicaciones de gestión de energía que pueden beneficiarse de la utilización de estos IGBT. Entre ellos se encuentran los convertidores HV, inversores, circuitos de impulsos de potencia, generadores de láser y rayos X, fuentes de alimentación HV, equipos de prueba HV, circuitos de descarga de condensadores, aplicaciones de conmutación médica, protección de circuitos HV e interruptores HV AC.


Los nuevos IGBTs XPT ™ están disponibles en los siguientes paquetes de tamaño estándar internacional: SOT-227, TO-247, PLUS247, ISOPLUS i5-Pak ™, TO-247HV, TO-247PLUS-HV y TO-268HV. Los tres últimos han aumentado las distancias de fuga entre los conductores, haciéndolos robustos contra tensiones más altas. Algunos ejemplos de números de parte incluyen IXYH24N170C, IXYN30N170CV1, IXYH30N170C, y IXYH25N250CHV, con colectores de corriente nominal de 58A, 88A, 108A y 95A, respectivamente.

Wednesday, March 29, 2017

Insulated Gate Bipolar Transistor (IGBT) Market - Research and Development to be Primary Focus of Industry Players

Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device and majorly finds application in switch, pulse modulation and phase control among others. This device competes with other power semiconductor devices including power MOSFETs, Silicon-Carbide (SiC), Gallium-Nitride (GaN). IGBT has been gaining demand owing to lower switching losses and higher reliability, which highlights features including higher efficiency and better thermal performance. The increasing focus and increased investments in R&D on IGBT chip and module optimization to reduce power consumption, improve chip density, thermal resistivity and efficiency would further strengthen the position of IGBT power semiconductor market.

IGBT is sold either as discrete device or as a module. The major applications of IGBT include motor drives, inverters, uninterruptible power supply (UPS), electric and hybrid electric vehicles (EV/HEV), industrial systems, consumer electronics, and medical devices. Green energy sector including wind turbines and solar photovoltaic (PV) in particular gaining significant growth in demand driven by rapid growth in green energy market itself that is leading to more wind turbine installations and more PV inverters being sold. Moreover, demand for EV/HEV is gaining significant traction and is expected to lead to high growth of IGBT market in coming future.

Over the coming years, the replacement of aging power infrastructure in developed regions and increased demand for smart grids would further boost the demand of IGBT and represents a significant opportunity. A major challenge to growth of IGBT is higher cost of the device as compared to power MOSFETs. Europe was the leading market for IGBT followed by Asia Pacific. North America is witnessing significant growth in demand owing to growth of green energy and EV/HEV markets.

Some of the key players in IGBT market include Infineon Technologies AG, Fujitsu Ltd., NXP Semiconductors N.V., STMicroelectronics N.V., Toshiba Corporation, Vishay Intertechnology, Inc., Renesas Electronics Corporation, ROHM Co. Ltd., Fairchild Semiconductor International, Inc., and Fuji Electric Co. Ltd among others.

Transparency Market Research (TMR) is a global market intelligence company, providing global business information reports and services. Our exclusive blend of quantitative forecasting and trends analysis provides forward-looking insight for thousands of decision makers. TMR’s experienced team of Analysts, Researchers, and Consultants, use proprietary data sources and various tools and techniques to gather and analyze information.

Tuesday, March 21, 2017

IGBT Modules in 62 mm Package Enable Higher Power Density

Infineon Technologies is expanding its offering of 62 mm IGBT modules with a larger chip area and an adapted direct copper bonded (DCB) substrate in the existing package for higher power density operation.

Typical applications for modules with 1200 V blocking voltage are drives, solar inverters and uninterruptible power supply (UPS) as well as medium voltage drives for modules with 1700 V blocking voltage.

With a blocking voltage of 1200 V, the 62 mm module reaches a maximum current rating of 600 A. At 1700 V blocking voltage, the maximum current rating is 500 A, making Infineon the market leader for this rating. The package is equipped with a base plate, its size corresponds to the industrial standard. It can therefore easily be integrated into existing designs delivering, for example, 20 percent more output power when applied for drives. The portfolio uses the IGBT4 – a proven technology that offers high robustness and reliability.

Two versions of the new power modules are also available in the “common emitter” configuration, with which a 3-level topology (NPC2) can be set up. This allows an efficient use in solar and UPS applications where the demand for power is high.

The new 62 mm power modules are in volume production, they are also available with pre-applied thermal interface material (TIM). Resembling a perfect match for the new 62 mm modules, Infineon also offers new thyristor / diode modules for the input rectifier in 34 mm and 50 mm packages featuring solder bonding technology.

Monday, January 9, 2017

IGBT with Photocopies and Printers

The fixing system for the toner in copy machines, laser printers, facsimile machines, data recorders, and scanners needs transfer of toner from the rolling drum to the printing paper with heat and pressure. Radiant heating with halogen lamps was used for this process in the past. However, nearly 90 percent of the printing energy is consumed by this operation. The efficiency can be improved by using the induction heating approach leading to reduction of the size of the printing devices.

The induction heating coil is installed concentrically inside the fixing roller. The high frequency inverter required to feed the inductive energy into the heating coil is built using IGBTs. The actual high efficiency of more than 94 percent of the series resonant ZCS-PDM high frequency inverter for IH roller in copy and printing machines has been observed for all the output AC power regulation ranges from 50 to 1200 W.


Wednesday, December 14, 2016

IGBT WITH INDUCTION ROW

Rice is the first & foremost food for billions of people around the world, especially in Asian countries such as China, India, and Japan, with mass populations. According to Asian Rice Foundation, “Rice is arguably the world’s most important food. It is the second most widely cultivated cereal in the world, after wheat, and is a staple food of over half the world’s population. Rice can be cooked in a variety of ways, including boiling, baking, roasting, frying, and pressure-cooking. Cooking rice in an automatic rice cooker is becoming very popular, as it ensures consistent results and cooking instruction is much simpler to follow”.

Many Asian companies have developed rice cookers based up on the induction heating principle. The induction heating can be accomplished by using an induction cooking plate or preferably by using an induction rice cooker. Two types of circuit topologies have been explored for the induction rice cooker. First one is the half-bridge series resonant converter and another is the quasi-resonant converter. The series resonant converter has the advantages of stable switching, low cost, and streamline design. The quasi-resonant converter has the advantage of a smaller design with reduced heat sink. The quasi-resonant converter is more widely used. Due to the large market for these appliances, some semiconductor companies have developed IGBT products optimized for this market for the quasi-resonant converter topology. IGBTs feature a robust and cost effective Field Stop (FS) trench construction, and provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. IGBTs are well suited for this type of resonant or soft switching applications.


Monday, December 12, 2016

IGBT with Portable Defibrillators

One of the every four deaths in the advanced world takes place because of cardiac arrest. Eighty-five percent of deaths from sudden cardiac arrest occur due to ventricular fibrillation. Without synchronization of heart muscles, blood flow through the body is interrupted leading to starving oxygen from organs. The victim will almost certainly die within 10 minutes unless aid is provided. A defibrillator applies a dose of electrical energy to the heart muscles which depolarizes a critical mass of the heart muscle, terminates the arrhythmia, and allows normal heart rhythm to be re-established. It is essential that the defibrillator be located close to the victim and be easily operated to provide the life-saving response within 10 minutes.


Automated external defibrillators (AED) are now widely deployed in places such as corporate and government offices, shopping centers, airplanes, airports, restaurants, hotels, sports stadiums, schools and universities with a high density of aging populations. The automated external defibrillator is designed to provide simple voice commands to prompt the administration of the live-saving electrical jolt to the victim. According to USA Today, about 450,000 people die each year in the U.S. from sudden cardiac arrest. Among these victims, the American Medical Association (AMA) estimates that more than 100,000 lives can be saved by the availability of modern AEDs enabled by IGBTs. Many companies have made IGBT particularly customized for the implantable defibrillator market.

Monday, December 5, 2016

IGBT FOR CAMERA WITH FLASH

Most consumers have already migrated from taking photographs using film to a digital medium. The Digital Still Camera (DSC) has now become common-place. All digital cameras incorporate a flash with many features such as red eye reduction. These capabilities require a digitally programmable control with very compact circuitry to drive the Xenon flash. Some cell-phones now incorporate a flash to improve up on the quality of photographs taken under low light conditions. In addition, electronic control of lighting is used by professional photographers with strobe flashes. Lighting rumors states on their website: “Paul C. Buff’s Einstein monolights have been a big hit in the photographic lighting market, much lauded for their insulated-gate bipolartransistor (IGBT) circuitry and digital remote control.”


A Xenon bulb is used to create a short powerful burst of light with illumination characteristics close to that of sunlight. The Xenon bulb requires a high operating voltage of 320-V derived from a low 3 to 6 volt battery source. This is achieved by using a DC/DC converter with step-up transformer as shown in the figure. The high voltage is stored in a capacitor and discharged into the Xenon blub by turning on the IGBT. The IGBTs must have not only a high sustaining voltage capability but must be capable of operating with a drive voltage of only 4 volts. The footprint of the IGBT must also be reduced with innovative chip design and packaging because it must be capable of handling 150-A for a short duration. A similar circuit is used for the flash in a cell-phone but there is even greater pressure for IGBT manufacturers to reduce the foot-print and gate drive voltage. Some companies have described their technology roadmap for shrinking the footprint for the IGBT devices used for the flash application.

Tuesday, November 29, 2016

IGBT in the Energy Generation Sector of Fossil Fuels

Among the legacy power generation technologies, gas turbine power plants are being deployed due to the discovery of large amounts of natural gas in the United States and Australia. A permanent magnet generator is run directly from a gas turbine without a gear-box for enhanced reliability. The generator terminal voltage is at a nominal 600-Hz which must be rectified and then converted to a well regulated 50 or 60 Hz AC power for transmission to points of use. IGBT power switches are now being used for this application because of the availability of high voltage, high-current modules from many manufacturers. A 1.6 Giga-Watt gas power plant can be designed using 6 modular 300 kVA three phase voltage source IGBT stacks with 6 IGBTs in a typical bridge configuration. The design allows full control of the AC current and power factor on the grid-side. The IGBT stacks are paralleled to satisfy the 1.6 Giga-Watt power requirements. The availability of intelligent IGBT power modules with gate drivers and protection circuits has accelerated the adoption of this technology.

Sunday, November 27, 2016

FF800R17KF6C_B2 - An Ideal IGBT Pair for Wind Power System

FF800R17KF6C_B2, a 1700V IHM 130mm Dual IGBT Module with IGBT2 Low Loss, enlarged diode and AlSiC base-plate. It’s the best solution for your renewable energy and industry applications. The module is manufactured by Infineon Technologies AG, a renowned semiconductor manufacturer from Germany. Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy Efficiency, Mobility and Security. FF800R17KF6C_B2 is highly reliable and features robust module construction. It has enlarged diode for regenerative operation.

Power semiconductors have a major role to generate energy from renewable sources. In wind turbines, power semiconductors are utilized to transform power and to combine the generator with the grid. They are also made into different subsidiary drives such as pitch drives, yaw drives, pumps and into protection circuits like crowbars. A number of vital functions and applications are controlled by wind power converters and that’s why highest quality power semiconductors are required. This is applicable in specific to offshore wind converters which operate in immensely tough conditions exposed to salt, humidity etc. Speedy growth is planned for the offshore portion. FF800R17KF6C_B2 is a perfect choice in these fields.

Wind energy turbines must also be intended to deliver maximum levels of availability in order to contribute to grid stability. This applies not only to the converter, but also to the different subsidiary drives mounted in different positions. Grid stability therefore depends on power semiconductor assemblies offering dynamic capabilities, outstanding functionality and superior reliability.

Advantages like high power density for compact inverter designs & standardized housing can be found if we use FF800R17KF6C_B2 in wind power applications.

There has been flourishing global advancement in wind power generation. The sum of power produced using wind-power has raised from 7.5 Giga-Watts in 1997 to 74 Giga-Watts in 2006 with further increment happening at the rate of a doubling of generation every three to four years. It is calculated that 12 percent of the world’s electricity requirements will be supplied by wind-power in 2020. The prominent wind power generators in the world are Germany and Spain, succeeded by the United States. China is also invasively imitating wind-power generation. China blueprints to spend $ 700 Billion until 2020 in renewable energy projects. Huadian Power International Corporation, a China based company has obtained authorization to build two wind power projects with an associated capability of 147 Mega-Watts. Moreover, an Indian company, Suzlon Energy, has become the world’s eighth largest generator of wind turbine generators. Companies have also fixed on wind-power as a significant growth segment in the future.

http://www.uscomponent.com had been selling IGBT power transistor modules since 2001.Infineon, Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.


http://www.uscomponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

Saturday, November 26, 2016

PARALLELING SYSTEMS FOR IGBTS AND THEIR IMPROVEMENT

Widespread application of IGBTs in the past two decades has resulted in dramatic improvement in performance of power electronic converters, the efficiency of these devices has made its mark, reducing the cost of power electronic systems and  improving their own reliability, making them the first option of the manufacturing industry, Paralleling systems for IGBTS and diodes is one of the best alternatives to achieve a best performance.


The conclusion is that paralleling systems for igbts provides an advantage due to the improved thermal behavior of several small chips rather than fewer big ones. The breakthrough in performance is seen when real life data of parameter variations within one power module are considered, instead of the datasheet values, which suggest a much higher spread than actually seen in real life.

Friday, November 18, 2016

IGBT in Renewable Energy Power Generation Sector

The production of electricity in the United States is mainly achieved by burning fossil fuels such as coal and natural gas. It is noteworthy that the demand for electricity is steadily increasing since the 1980s with no sign of abatement. The increased demand for electricity is being served by the installation of electricity generation plants based on fossil fuels. Since fossil fuels produce carbon dioxide emissions, it would be preferable to enhance the deployment of electricity production using renewable energy sources such as wind-power and solar-power. At the recent (May 2011) Doha conference, the U.N. Intergovernmental Panel on Climate Change published a report stating: “It is likely that renewable energy will have a significantly larger role in the global energy system in the future than today.”


The renewable energy sources are considered the most promising options in the near future. According to the U.S. Department of Energy, offshore wind farms, alone could produce 900 Giga-Watts of power which is sufficient to supply the needs of the entire United States. According to the European Photovoltaic Industry Association, solar energy reaching the earth, converted to electricity using solar-farms could satisfy global energy needs 10,000 times over. Other renewable energy sources include wave-power, geothermal-power, etc. In the first six months of 2010, 11 percent of the electricity produced in the U.S. came from renewable energy sources. In March 2011, China released its new five-year plan with goals of 11.4 percent of energy generated using non-fossil fuels. The IGBT is a critical technology required for the deployment of all renewable energy sources.

Wednesday, November 16, 2016

APPLICATIONS OF IGBT

Now-a-days the IGBT (Insulated Gate Bipolar Transistor) is extensively applied in the transportation, renewable power generation, consumer, aircraft, medical, industrial and financial sectors all worldwide. As a result, billions of people from around the globe are enjoying enhanced comfort, convenience, and quality of life. IGBTs are known for their fantastic efficiency and speedy switching characteristics. These qualities make IGBTs very suitable for applications where saving energy and protecting the environment are very important. IGBTs are being used in almost all sectors of our economy because there isn’t any exact alternative available which can be used in place IGBT and can offer same advantages.

Over the last 20 years, the cumulative influence of the advanced capability of IGBT-powered applications has been an aggregate worth savings of $ 2.7 Trillion for U.S. consumers and $ 15.8 Trillion for consumers all over the world. On the other hand, the developed efficiency generated by IGBT-powered applications has propagated a cumulative lessening in carbon dioxide emissions by 35 Trillion pounds in the United States and 78 Trillion pounds worldwide during the last 20 years. So, the IGBT has already had a key impact to make a sustainable world-wide society with advanced living standards along with alleviating the environmental impact.

After its conception in the early 1980s, the applications for IGBTs have been incessantly spreading. It has already had a great impact on: the transportation sector, the consumer sector, automation sector, industrial sector, medical sector, aerospace sector, marine sector, defense sector; financial sector, power transmission and distribution sector, renewable energy power generation sector and many other sectors of the economy.

What would happen if all the IGBT were removed from the applications that they serve today?” The answer is quite revealing: Our new solar and wind based renewable energy sources would not be able to deliver power to the grid because the inverters would stop functioning. Our gasoline power cars would stop running because the electronic ignition systems would no longer function. Our hybrid electric and electric cars would stop running because the inverters used to deliver power from the batteries to the motors would no longer function. Our electric mass-transit systems would come to a standstill because the inverters used to deliver power from the power-grid to the motors would no longer function. Our air-conditioning systems in homes and offices would stop working because the inverters used to deliver power from the utility company to the heat-pumps and compressors would no longer function. Our refrigerators and vending machines would no longer function making the delivery and storage of perishable products impossible. Our factories would come to a grinding halt because the numerical controls use to run the robots would cease to function. Our new low-energy compact fluorescent bulbs would stop functioning limiting our activities to the daytime. Our portable defibrillators recently deployed in emergency vehicles, on-board airplanes, and in office buildings would no longer be operational putting over 100,000 people at the risk of death from cardiac failure.


In one statement, the quality of life in our society would be greatly deteriorated if the IGBT is no longer available. It’s a blessing of modern science.