IGBT is the short term
for Insulated Gate Bipolar Transistor, that is a three-terminal semiconductor
device with a huge bipolar current carrying capability, many designers
think that IGBT has a CMOS i/p ad bipolar o/p characteristic voltage controlled
bipolar device, that makes this device designed to make use of the benefits of
both BJT and MOSFET Devices in the form of monolithic it combines the best
qualities of both to obtain the better device in the market.
The IGBT Module can bes
used in power electronics, particularly in PWM(Pulse Width Modulated), UPS (Un
interruptible Power Supplies), SMPS (Switched-Mode Power Supplies), and other
power circuits. It increases the efficiency, dynamic performance and reduces the
level of the audible noise. It is similarly fitted in the of resonant mode
converter circuits. Optimized IGBT is accessible for both low switching loss
and low conduction loss.
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