Expanding Applications for IGBT

The used of IGBT also known as ‘The Insulated Gate Bipolar Transistors” are expanding for

many application aspects due to profound research done by developers. Previously, it is

commonly used for the production of renewable energy and for HEV/EV, which plays a vital

role. These days, IGBT is used to improved communication systems and power management

to Smart Homes. Printers and Copying machines now also uses IGBT to control heat to fix

the toner. Airports security Scanners uses IGBT for their power supply in regulating the X-ray

tube voltage to produce high-quality images.

Since IGBT could generate high electric fields, it

is also being used for sterilization of food and for water treatment. The Water desalination

performed using IGBT-based motor drives as well. The IGBT is also used in the power

supplies for heating the oil pipes during the extraction of petroleum from the ground. Generators

that used for standby powers also uses IGBT in their inverters. Moreover, NASA (National

Aeronautics and Space Administration) used IGBT for space shuttle main engine thrust

control, power distribution network and it’s the orbital maneuvering system.

https://www.uscomponent.com/

IGBT on Wind Energy Systems

Many countries around the world now are looking at investing in renewable energy sources. Governments are considering renewable energy as one of their strategy for developments. The implementation of renewable electricity sources promotes market opportunities for IGBT, especially for offshore wind turbines. These turbines need IGBT to run in rugged environments to deliver maximum efficiency to grid stability.

Now, with an increasing number of these energy resources, together with the government eagerness the invest, the IGBT market is expecting to ramp up and grow in a large-scale. These actions open the opportunity for dominant players such as Infineon Technologies among the other in the IGBT market to potentially increase their businesses.

HEVS drives IGBT Crazy

Thirty years ago, back to the first time, the IGBT was commercialized, IGBT devices have a

voltage breakdown of 1100V. Right from then, IGBT power range has developed to 400-

6,500V, making IGBTs to be a part of all power electronics applications and strongly impacted

the HEV/EV industry.

Mass production and innovations of HEV/EV justify the promising future of IGBT. In fact, by

2020, it is expected that HEV/EV represents almost 50% of the IGBT market.

Major contributor in the IGBT market that exercises the IGBT application on HEVS are Chinese

companies. Since they are willing to compete with the European and Japanese players and

challenged them with the latest innovative technologies at the module level, especially the

packaging.

Latest on China IGBT Market

Countries with an advanced level of technology such as Japan, Europe among others, the

demand for IGBT is quite rising that results in increasing competitiveness in the international

market. However, major international manufacturers in the market offer cost relatively higher

compare to the Chinese manufacturer. But with the continuous development Chinese IGBT, they

are now in the edge of being one of the major players in the IGBT industry.

Lately, a report from Trendforce states that the China IGBT market scale in 2018 is expected

to be RMB 15.3 billion, showing a yearly increase of 19.91% and continue to stand at RMB

52.2 billion by 2025 with a CAGR of 19.11%. The rising numbers of HEV/EV productions

drive the growth of the Chinese IGBT market. According to the data published by China

Automotive Industry Association, the China HEV/EV production rose from 17,000 cars in 2013

to 780,000 cars in 2017, with CAGR coming to 160.26%.

IGBT (Insulated-gate Bipolar Transistor) Trend 2019

IGBT (Insulated-gate Bipolar Transistor) is a simple device commonly used as an electronic

switch which came to combine high efficiency and fast switching. The target application such

as electric vehicles and wind farms are helping to make it highly demand nowadays in global

Market.

The major contributor of global IGBT is China due to rampant usage of a high-speed train, NEV,

photovoltaic and inverters on their technologies, as well as the initiatives of the government in

promoting the use of renewable energy sources yet, they are expecting the market growth

could be hindered due to an unexpected increase of over demand for IGBT. Nonetheless,

according to the latest reports, the IGBT localization ratio is picking up a pace and would further

fuel market growth.

The global IGBT market is controlled by four major players and is holding a major share of

the market value. These are Infineon Technology, Fuji Electric, Semikron, and Mitsubishi.

Furthermore, these companies are also leading the Chinese IGBT market. However, in line

with the strong competition, Chinese IGBT market is now looking at a different scenario in the

near future as their localization rate is improving and domestic companies are improving them

products to make their presence felt in the domestic market.

IGBT & Thyristor Market Predicted Double-Digit Growth Rate by 2024

The “Global IGBT & Thyristor Market: Global Industry Analysis, Size, Share, Growth, Trends, and Forecasts 2016–2024”platform has endless research reports being published every second owing to the high demand for IGBT & Thyristor Market specific report. The Global IGBT & Thyristor Market reports are in-depth studied and detailed out in a linguistic format for the expert and commoners’ level of understanding. Each of the IGBT & Thyristor Market research studies provided by the IGBT & Thyristor Market platform is both qualitatively and quantitatively up to the mark.

Even the leading industries

·         Fuji Electric Co.

·         ABB Ltd.

·         Infineon Technologies AG.

·         Fairchild Semiconductor International Inc.

·         Hitachi Ltd.

are provided in the IGBT & Thyristor Market research report after a thorough Global analysis.

The statistical dossier focuses light on a few of the aspects like geographical versatility, various applications, market share and size, growth and development dynamics, financial lookout, dominating industries, and more.  The in-depth analysis of the IGBT & Thyristor Market helps one get an entire overview of the market within a fraction of a second by referring to the IGBT & Thyristor Market platform. Even the subtlest of the details are mentioned in the research reports in such a manner that all the concerns regarding the development, product market activity chain, and capitals are detailed out on a Global basis.

The Global IGBT & Thyristor Market research report has all the vital market-related concepts mentioned in a diagrammatic, segmentation, and to-the-point pattern. The in-depth analysis along with a strategic IGBT & Thyristor Market researching helps pencil down the project in a measurable and efficient manner. The data detailed out in the exploration report comprises of the supply-demand chain, investments, and more. The few of the vital insights mentioned in the contextual investigation include import-export volume, venture gross margins, market share, and government policies.

The case study is written down such that the clients and the layman can easily get the gist of the IGBT & Thyristor Market report with a better understanding of the future scope, current market position, significant growth factors, and geographical segmentation. The details of the particular product market are provided right off the bat with extreme lucidity.

IGBT & Thyristor Market Predicted Double-Digit Growth Rate by 2024

The “Global IGBT & Thyristor Market: Global Industry Analysis, Size, Share, Growth, Trends, and Forecasts 2016–2024”platform has endless research reports being published every second owing to the high demand for IGBT & Thyristor Market specific report. The Global IGBT & Thyristor Market reports are in-depth studied and detailed out in a linguistic format for the expert and commoners’ level of understanding. Each of the IGBT & Thyristor Market research studies provided by the IGBT & Thyristor Market platform is both qualitatively and quantitatively up to the mark.

Even the leading industries

·         Fuji Electric Co.

·         ABB Ltd.

·         Infineon Technologies AG.

·         Fairchild Semiconductor International Inc.

·         Hitachi Ltd.

are provided in the IGBT & Thyristor Market research report after a thorough Global analysis.

The statistical dossier focuses light on a few of the aspects like geographical versatility, various applications, market share and size, growth and development dynamics, financial lookout, dominating industries, and more.  The in-depth analysis of the IGBT & Thyristor Market helps one get an entire overview of the market within a fraction of a second by referring to the IGBT & Thyristor Market platform. Even the subtlest of the details are mentioned in the research reports in such a manner that all the concerns regarding the development, product market activity chain, and capitals are detailed out on a Global basis.

The Global IGBT & Thyristor Market research report has all the vital market-related concepts mentioned in a diagrammatic, segmentation, and to-the-point pattern. The in-depth analysis along with a strategic IGBT & Thyristor Market researching helps pencil down the project in a measurable and efficient manner. The data detailed out in the exploration report comprises of the supply-demand chain, investments, and more. The few of the vital insights mentioned in the contextual investigation include import-export volume, venture gross margins, market share, and government policies.

The case study is written down such that the clients and the layman can easily get the gist of the IGBT & Thyristor Market report with a better understanding of the future scope, current market position, significant growth factors, and geographical segmentation. The details of the particular product market are provided right off the bat with extreme lucidity.

FF400R12KE3 IGBT Module - Infineon Technologies Semiconductor

FF400R12KE3 has the ultimate tool to make your welding machines attain optimum electric performance. Weighing only 2.2 lbs., this IGBT transistor module, can produce power of up to 1200V, making it a perfect semiconductor to charge up welding machines.

The secret that makes FF400R12KE3 on top of all the semiconductors is the presence of PrimeSTACK. With this component equipped to the IGBT transistor module, it provides the ability to measure all sorts of voltage, current and temperature. Other features of PrimeSTACK include:

• Perfect for FF400R12KE3 and other IGBT transistor modules that can produce 1200V of power
• Different standards of heatsink suitable for air cooling
• Integrated IGBT EiceDRIVER Safe
• Reinforced isolation
• Monitors DC link voltage
• With current sense to every leg output, and…
• Analogue output to each sensor signal

With PrimeSTACK’s unique and powerful features, FF400R12KE3 is undeniably a perfect semiconductor to take the performance of welding machines to the next level.

https://www.youtube.com/watch?v=J2xDg21oXzo

Academic-Engineer Report of the IGBT until 2021

This report provides accurate forecasts for the year 2021 by engineers in the market as well as the opinion of experts from credible sources, and the recent development of R & D in the industry that currently serves as a backbone of the report of the IGBT industry. For the help of the new participants in this technological market, this report offers a competitive scenario of the IGBT industry with growth trends, structure, driving factors, scope, opportunities, challenges, supplier landscape analysis, etc. report. It is expected that the global IGBT market will increase at a stable rate and obtain a CAGR (compound annual growth rate) of 11.5% during 2017-2021. Key questions answered in the IGBT market report: What will be the total coverage until 2012 and what will be the growth rate? What are the key trends of the market? What is driving this market? What are the challenges for the growth of the IGBT market? Who are the key suppliers in this market? What are the market opportunities and threats faced by key suppliers? What are the strengths and weaknesses of the key suppliers? In the end, our IGBT market report is the result of the dedication of our experts to information that can be useful for all.

FF1400R12IP4 Eupec Infineon IGBT Transistor Module

FF1400R12IP4 is the semiconductor you need to significantly improve the performance of your city’s railway tractions. With a power to generate up to 1200V, tractions can handle any challenges with ease.

FF1400R12IP4 is a Eupec Infineon IGBT transistor module. It has a Trench IGBT 4 with NTC and Emitter-controlled 4 diode to give the boost of energy that railway tractions need.

To handle extreme temperatures, FF1400R12IP4 is equipped with the following components:

• Extended operation temperature
• Low Vce (sat), and…
• Improved power and thermal cycling capability

Infineon FF1400R12IP4 has a high power density. It has excellent DC stability and self-limiting short circuit current to make sure that the voltage does not deteriorate easily. This IGBT transistor module even has high creepage and clearance distances and a substrate for low thermal resistance.

https://www.youtube.com/watch?v=ktX9Gx5l9m0

Infineon IGBT Semiconductor FZ1800R17KF6C_B2

FZ1800R17KF6C_B2 is the best solution to extend the power supply of your UPS. One of Infineon’s finest creations, FZ1800R17KF6C_B2 is an IGBT transistor module with more powerful features than any ordinary semiconductors. Weighing around 11 lbs., FZ1800R17KF6C_B2 can produce power up to 1700V or 1800A.

FZ1800R17KF6C_B2 has low switching losses, ensuring that the energy it provides to your UPS will not deteriorate that easily. Made for industrial and energy applications, this IGBT transistor module promises to be highly reliable and efficient. Witness the boost it gives to your UPS and see how long it can sustain that amazing ability.

FZ1800R17KF6C_B2 is also equipped with patented free floating silicon technology to be able to handle its optimal power rate. Aside from UPS, this IGBT transistor module is also resilient enough to boost the power of other applications.

https://www.youtube.com/watch?v=1Uv-q6EOTjU

1200V IGBT Inverter FZ1200R12KF1

FZ1200R12KF1 is a lightweight, high power IGBT transistor module that can provide your UPS that added boost! At 8.82lbs, FZ1200R12KF1 can create power up to 1200A or 1200V.

This IGBT transistor module, with high sensitivity, has anti-blooming characteristics with a continuing variable speed shutter. Infineon FZ1200R12KF1 can provide more than enough energy for UPS to go beyond its maximum capability with its strong module construction and optimum electrical performance. It is a perfect solution for industrial applications.  Manufactured by Infineon, one of the most reputable manufacturing companies worldwide, you can be assured of its high quality that makes it truly a worthwhile investment.

https://www.youtube.com/watch?v=FHf1YmZwLzY

FZ400R65KF1 - One of the Best Infineon IGBT Module

FZ400R65KF1 is the best Infineon IGBT semiconductor to put the power of your welding machines to the next level. It may only weigh 2.20 lbs. but you’ll be surprised as it can produce a power level of 6700V!

FZ400R65KF1 is designed with high level of efficiency. This Infineon IGBT module has the capability to let the power of welding machines go beyond the limit. Worried about possible combustion? Don’t! FZ400R65KF1 is RoHS compliant and guaranteed to be lead free.

Even the price is not a problem with FZ400R65KF1 as it’s totally competitive. Buy one and you don’t have to make another purchase for a long time. Its durability helps lengthen its lifespan.

Aside from welding machines, Infineon FZ400R65KF1 also works best on other applications! UPS, AC motor drive, DC motor drive, you name it and this IGBT transistor module can power it up with ease!

https://www.youtube.com/watch?v=oI3XebEhaf4

Characteristics of IGBT FZ1600R12KE3

FZ1600R12KE3 is a perfect IGBT transistor module to make your solar panel achieve optimum performance for an extended period of time. With the power to generate up to 1200V or 1600A, this IGBT transistor module from Infineon guarantees high efficiency to solar panels.

FZ1600R12KE3 promises three advantages which are beneficial to solar panels:

• Robust module construction to withstand the potential problems of solar panels
• High level of efficiency to generate more than enough power and maintain the best performance, and…
• High reliability to stay powerful even after three to five years

FZ1600R12KE3 is also a perfect IGBT transistor module to other applications like wind turbines, motor drives and UPS. It’s also recommended for standardized housing.

https://www.youtube.com/watch?v=PFFw8F0b5ko

Buy CM300DY-24H at USComponent.com

Modern train traction systems use high-speed switching CM300DY-24H in main circuits. High-speed switching reduces electromagnetic noise generated by the main motor and improves the efficiency of energy conversion. For the inverter control system, vector control is employed to control the torque current component and the exciting current component separately, which are output to the induction motor. Since vector control ensures high-speed torque control, it is also applied to slip-slide control to improve adhesion force. The maintenance work for contacts and pneumatic parts can be eliminated by replacing mechanical contacts in each unit with electronic contacts and by changing the pneumatic operation system to an electromagnetic one.

Dynamic braking requires two components: the factory installed brake chopper and the external brake resistor. The brake chopper consists of an IGBT assembly and logic function that is factory mounted internally to the adjustable frequency drive (AFD). CM300DY-24H is a very suitable insulated gate biopolar transistor for using in the dynamic braking choppers. The chopper controls the DC link voltage by connecting the brake resistor across the link when the voltage reaches a predetermined level, dissipating the excessive energy in the brake resistor. The brake chopper size is fixed by the drive rating. The brake resistor is selected on the basis of the AFD rating, the magnitude of the energy to be dissipated, and the braking duty cycle.

You can buy CM300DY-24H from here.

Siemens to Install State-of-the-Art IGBT Technology for Indian Railways

IGBTs are state-of-the-art power electronics for the traction system of electric and diesel-electric rail vehicles. The main benefit of IGBT is that it reduces the requirement for current, minimizing heat and traction noise while also making the acceleration process efficient. Automations solutions provider Siemens Limited has bagged the contract to install state-of-the-art IGBT technology for Indian Railways. The company will be designing, supplying and installing alternating current (AC) traction systems for dual cab high horsepower diesel engine locomotive for diesel locomotive works (DLW). "The systems have been developed based on the state-of-the-art insulated gate bipolar transistors (IGBT) technology. The AC traction systems will be produced at its factory at Nashik, Maharashtra, India" the company said.

IGBT in Washing Machine Agitator

Electric automatic washing machines are now common in homes for the cleaning of daily household laundry. Washing machines were developed to eliminate the drudgery of scrubbing and rubbing to remove dirt from clothes. Electric washing machines were advertised and discussed in newspapers as early as 1904. The first automatic washing machine was introduced by Bendix in 1937. Sixty percent of the 25 Million wired homes in the United States had an electric washing machine by 1940. The annual sales for washing machines have grown to more than 58 million units worldwide by 2003. Many of these units are front loaders. Early automatic washing machines utilized mechanical means for making any changes in impeller/drum speed. Since the 1970s, electronic control of motor speed has become a common feature of most washing machines. Modern automatic washing machines provide many sophisticated features to handle the safe cleaning of a wide range of fabrics with a variety of soil removal requirements. The soil removal in an automatic electric washing machine is performed by a process of agitation of the clothes. The agitator is controlled using IGBT-based motor control modules. The direction of rotation of the motor and its speed can be regulated by using the power delivered via the IGBTs. Inverter control with IGBTs reduces wash/spin noise and vibration, and enables adjustment of the amount of water and motor torque to suit the washing load.

IGBT in Fluorescent Lamps

It is now well-known that the IGBT enabled introduction of cost effective and reliable compact fluorescent lamps. This allowed the replacement of incandescent bulbs to provide a typical power savings of 45 watts for a 60 watt bulb. Based upon this power savings, the total reduction of electricity power consumption in the U.S. and the world between 1990 and 2010 is very noticeable. The reduction of carbon dioxide emissions in pounds per year due to this reduced electricity power consumption can be computed by multiplying the data in these figures by rate of carbon dioxide emission per kWh of electricity generated by typical power plants. The Environmental Protection Agency has analyzed the carbon dioxide emission from various types of power plants. Electricity is generated mostly (51 percent) from Coal-fired power plants in the United States. Unfortunately, the carbon dioxide emission from coal-fired power plants is the highest among the power generation options. The average carbon dioxide emission per kWh generated in the U.S. is 1.350 pounds. This value will therefore be used in the computation of carbon dioxide emission reductions resulting from IGBT-enabled compact fluorescent lamps. The reduction of carbon dioxide emissions due to the availability of IGBT-based compact fluorescent lamps obtained by multiplying the energy savings per year in kWh by 1.35 pounds/kWh.

IGBT in Solar Inverters

Solar power has a large potential to provide the electricity needs of the world’s burgeoning population. However, in 2008, solar-power supplied less than 0.02% of the total energy supply in the world. In a solar or photovoltaic cell, the incident sunlight is converted into an electrical current using the photoelectric effect within semiconductor. The typical silicon P-N junction produces the current at a DC voltage of about 0.8 volts. Many such junctions must be placed in series and parallel to create a solar panel with sufficient power generation capability for use in homes or power delivery systems. Typical solar panels may produce hundreds of watts of power at a DC voltage of about 300 volts. The DC voltage produced by the solar array must be converted into a desired well regulated AC power by using an IGBT-based inverter. IGBTs deliver low conduction and switching losses resulting in high inverter efficiency. Many companies have developed IGBT products specifically targeted for the solar inverter application. Some examples of IGBT products tailored for solar inverter applications are the Microsemi ‘APTGV30H60T3G’, International Rectifier ‘IRG4PC40UDBF’, Infineon ‘EconoDual IGBT’ etc.

Plasma cutting machines use IGBT based inverters

Plasma cutting is a procedure for cutting metal (mainly steel) of various sizes and thickness using the plasma torch. This plasma torch is adequately hot to melt the metal that is cut and it also moves quickly to blow the metal far from the present cut. Plasma arc cutters deploy the Insulated Gate Bipolar Transistor (IGBT) plasma cutting technology to provide more commercial plasma cutting equipment. The IGBT plasma cutters take up a different method to start the pilot arc and are better suited for professional environments. Many IGBT plasma metal cutters often deploy high frequency starting technology, high voltage circuit just for the starting process while others use Pilot Arc starting technology, where the torch enables a constant arc without touching the work piece. The Insulated Gate Bipolar Transistor (IGBT) versus the Metal Oxide Semi-conductor Field Effect Transistor (MOSFET) has been a controversial subject ever since the IGBT technology came into being in the 1980s. IGBT technology for welding applications has certainly proved to more effectively handle the rigorous demands the high duty cycles welders as it offers higher voltage capacities and heat tolerances than the earlier MOSFET.