Renesas Cuts Immersion Voltage in IGBTs

Renesas has shaved 200mV from the immersion voltage of its 650V IGBTs to expand power proficiency.

Said to be because of "ultrathin wafer innovation", run of the mill immersion voltage has dropped from 1.8V to 1.6V in 650V gadgets, and from 2.1V to 1.8V in 1,250V forms.

"There is an exchange off between immersion voltage and the high short out resilience," said the firm. "It has been hard to accomplish low misfortune alongside a high short out resilience."

In any case, it appears to have done it, with short out resilience up to 10µs, contrasted and 8µs in its practically identical prior items. "This guarantees dependability and strong execution in frameworks, for example, power conditioners for sun oriented force inverters," said Renesas.

For quicker exchanging, reverse exchange capacitance is roughly 10% down "by advancing the surface structure of the gadget".

The 13 IGBTs can be found in the RJH/RJP65S arrangement for 650V and RJP1CS arrangement for 1,250V.

Shipping organizations are wafer/chip and TO-247A bundle for the RJH65S arrangement.

Tests begin delivering this month, with large scale manufacturing planned to start in September 2012, scaling to 500,000 units/month by April one year from now.

Renesas likewise plans to discharge a line of units comprising of the new IGBTs with RL78 and RX groups of microcontrollers for engine and inverter control.

Renesas Electronic lanza su Octava generación que mejora el sistema solar

Renesas Electronics Corporation (TSE: 6723), Un proveedor premier  avanzado  de soluciones semiconductor, hoy anuncio la  a disponibilidad  de seis nuevos productos en la Octava generación serie G8H de  Transistor Bipolar de Puerta Aislada (IGBT) dispositivos que minimiza las pérdidas de conversiones, en los acondicionadores de potencia para generación de energía solar y reduce aplicaciones de inversores en sistemas de alimentación ininterrumpida (UPS).

Comparada con la pasada generación de IGBTS, estas se dicen que son más rápidas  y tienen un mejor sistema de cambios junto con el sistema de carga mientras tanto también reduce  la perdida de la conducción  bajándole la saturación al voltaje, Adicional, la actuación de los  dispositivos  se dice que mejoro un 30% comparado  a la 7ma-generacion IGBTs.

En el Sistema solar IGBTS  siempre hay una cantidad de potencia  que se pierde  por eso es que  es una prioridad  reduce este problema, reduciendo la perdida de la potencia  ha tenido un impacto positive cuando se fabrica y usando estos modelos.

En el Sistema solar IGBTS  siempre hay una cantidad de potencia  que se pierde  por eso es que  es una prioridad  reduce este problema, reduciendo la perdida de la potencia  ha tenido un impacto positive cuando se fabrica y usando estos modelos.

Algunas características claves de esta Octava generación son:

-Sistema de cambio más rápido, ultra-bajo características de pérdida de potencia ideal líder en la industria de circuitos inversores

- Eliminar las resistencias de puerta exterior gracias al bajo  ruido del cambio.

- En primer lugar Industry's-1250 V IGBT construido en Diode en un TO-247 más una versión de un paquete  discreto  disponible para 75 A  la banda actual está calificada a 100 C.

- A-247 paquete con una excelente disipación de calor; su operación está garantizada a elevadas temperaturas hasta 175°C.

Renesas Electronics Launches Their 8th Generation That Improve The Solar Systems

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the availability of six new products in the 8th-generation G8H Series of insulated gate bipolar transistor (IGBT) devices that minimizes conversions losses, in power conditioners for solar power generation systems and reduce inverter applications in uninterruptable power supply (UPS) systems.

Compared to the previous generation of IGBTS, these are said to be faster and have a  better switching performance along with a  better charging system while also reducing the conduction loss by lowering the saturation voltage. Additionally, the devices’ performance index is claimed to have been improved by up to 30% compared to the previous 7th-generation IGBTs.

In solar power system IGBTS  theres always some amount of power loss that’s why it’s a top priority to reduce this problem, reducing the power loss has a positive impact when manufacturing and using these modules.
Some key features about this 8^th generation are:

·         Faster switching, industry-leading ultra-low power loss features ideal for inverter circuits

·         Eliminated external gate resistors thanks to low switching noise

·         Industry’s-First 1,250 V IGBT with built-in diode in a TO-247 plus discrete-package version available for 75 A current band rated at 100C

·         TO-247 package with excellent heat dissipation; operation guaranteed at high temperatures up to 175°C