USComponent.com

Sunday, March 29, 2015

Infineon IGBT Gate Driver Distributor - FZ600R12KS4 High Intelligent Power Module



Click the link below to buy the product!

http://www.USComponent.com/buy/eupec-infineon/fz600r12ks4/ is one of the fastest growing distributors of Infineon IGBTs and IGBT power inverters!

Power up your solar converters beyond their limits! The ultimate solution: Eupec Infineon FZ600R12KS4, the super high power IGBT transistor modules that you can count on for a lifetime.

This Infineon IGBT gate driver module has incomparable features that make countless buyers of solar converters choose it over ordinary transistor modules.  Certified by the UL and CSA, it is unlike any typical module and can operate and withstand extreme temperature.

FZ600R12KS4 has a modified switching attribute such as decreased switching losses.  It allows soft recovery and has previous packages that provide greater current capabilities.  RoHS compliance guarantees the product’s safety and security.

With its incredible features, FZ600R12KS4 is the perfect IGBT transistor module that is also compatible to other applications such as CAVs, UPS, Induction heating and a lot more!

Visit USComponent.com today to experience the power of Infineon IGBT FZ600R12KS4.


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Friday, March 27, 2015

What Is IGBT FZ800R12KL4C & IGBT Gate Driver Datasheet?




Nuclear, coal and petroleum are the world’s greatest sources of energy, powering our everyday lives.  Each day, more and more energy is consumed, hence, depleting our sources – sources that cannot be replaced, sources that form a huge part of our global problems.

As we divert to alternative sources of energy, companies supplying them face challenges in maintaining optimum performance. And it is through this idea that FZ800R12KL4C is born.

FZ800R12KL4C, a first class IGBT transistor module, changes the game in wind energy systems. Powering up wind turbines beyond limits, your community is guaranteed to have enough wind energy that will last for an extended period of time. Able to withstand harsh climates, FZ800R12KL4C assures that your wind turbines remain at their excellent performance. Finally, it’s equipped with the Emitter-Controlled Diode that reduces the IGBT’s turn-on losses and provides soft recovery.

Get FZ800R12KL4C now at USComponent.com and let your community experience an extraordinary kind of wind power.


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Tuesday, March 24, 2015

FZ400R12KS4 IGBT Power Modules & Other Online Electronic Components



http://www.uscomponent.com/buy/eupec-infineon/fz400r12ks4/ An online electronic components and IGBT power modules distributor.

FZ400R12KS4 is a perfect IGBT transistor module for your commercial, agriculture and construction vehicles or CAVs. With a light weight of 2.2 lbs, FZ400R12KS4 is designed for high frequency switching, making it the perfect IGBT transistor module for CAVs.

FZ400R12KS4 also features high short circuit capability, self-limiting short circuit current, low switching losses, and high creepage and clearance distances. With its unparalleled robustness, your CAVs would have power beyond the limits!

Since FZ400R12KS4 guarantees optimal performance, flexibility and reliability, this IGBT transistor module is not only suitable for CAVs. It is also proven to be beneficial to other target applications such as:

Solar and wind converters,
Induction heating, and
Welding.

Your CAV deserves the best IGBT transistor module! Order yours today at USComponent.com and experience the ease and comfort that FZ400R12KS4 can provide for you!


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Thursday, March 19, 2015

The Eupec Infineon Thyristor and IGBTs Power Modules



http://www.USComponent.com/IGBT-Manufacturer/eupec-infineon/ is one of the fastest growing distributors of electronic components worldwide. We provide fast delivery and tech support for power electronics. One of our manufacturers is Infineon Technologies AG.

Infineon Technologies AG is a German semiconductor manufacturer founded on 1 April 1999, when the semiconductor operations of the parent company Siemens AG were spun off to form a separate legal entity.

Infineon develops innovative IGBT solutions for individual systems and applications. Being a brand leader in IGBT manufacturing, Infineon offers a comprehensive portfolio containing different voltage and current classes. IGBT products are offered as bare dies, discrete components, power modules, and complete stack solutions.

IGBT bare dies are silicon based IGBT chips. Infineon supports bare die and wafer solutions for module manufacturers enabling higher levels of integration, power density and board space reduction. Infineon also offers IGBT chips assembled in discrete plastic packages, called Discrete IGBTs, which are available as Single IGBTs and co-packed with freewheeling Diode. These devices are suitable for application such as General Purpose Inverters, Solar Inverters, UPS, Induction Heating, Major Home Appliances, Welding, and SMPS. Benefits of Discrete IGBTs are high current density and low power dissipation resulting in higher efficiency and smaller heat sink to allow lower overall system cost.

Larger arrangements that form basic building blocks of power electronic equipment are considered Power Modules usually combining IGBT and diode dies in various topologies. Ready to use assembled stacks are configured to cope with the needs of IGBT power modules or discs, depending on the field of applications From all-in-one power integrated modules with rectifier, brake chopper and inverter part to highest power stack assemblies, Infineon products cover a range from only hundreds of watts to several megawatts. General purpose drives, servo-units and renewable energy applications like solar inverters or wind applications benefit from the outstanding performance, efficiency and longevity of these highly reliable products.

The HybridPACK family as a special product series with automotive qualification is available to support the designer's efforts in electric mobility. With the HybridPACK family Infineon has developed new power semiconductor modules, which have been specifically designed for hybrid electric vehicle applications. Variations in the requirements for mild and full hybrid applications have been taken into account for each design. For evaluation purposes Infineon is offering a complete Hybrid-Kit solution consisting of a HybridPACK 1 or HybridPACK 2 module, driver board, logic board and a special designed power capacitor from EPCOS.

The automotive Easy 1B and Easy 2B Modules provide a platform for flexible topologies for applications with a power range of up to 6kW. The automotive Easy Module Series is based on the well-established industrial Easy Module version. The availability of a high voltage battery system in both HEVs and EVs offers the possibility to increase the efficiency and to reduce the cost of some applications that are today supplied by the low voltage board-net (14V) in IC engine vehicles.
Infineon further supports the automotive industry, providing a variety of discrete IGBT power semiconductors qualified according to AECQ101.

To make setting up a laboratory experiment or a first prototype easier, Infineon helps by providing evaluation boards for most of the products to accelerate development cycles. Thus, conclusive results can be generated within the shortest possible time.


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Tuesday, March 17, 2015

FF800R17KF6C_B2 - An Ideal Dual IGBT Module For Wind Power Systems



Looking for FF800R17KF6C_B2? Click the link below:

USComponent had been selling IGBT power transistor modules since 2001. Infineon, Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

FF800R17KF6C_B2, a 1700V IHM 130mm Dual IGBT Module with IGBT2 Low Loss, enlarged diode and AlSiC base-plate. It’s the best solution for your renewable energy and industry applications. The module is manufactured by Infineon Technologies AG formerly Eupec, a renowned semiconductor manufacturer from Germany. Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy Efficiency, Mobility and Security. FF800R17KF6C_B2 is highly reliable and features robust module construction. It has enlarged diode for regenerative operation.

Power semiconductors have a major role to generate energy from renewable sources. In wind turbines, power semiconductors are utilized to transform power and to combine the generator with the grid. They are also made into different subsidiary drives such as pitch drives, yaw drives, pumps and into protection circuits like crowbars. A number of vital functions and applications are controlled by wind power converters and that’s why highest quality power semiconductors are required. This is applicable in specific to offshore wind converters which operate in immensely tough conditions exposed to salt, humidity etc. Speedy growth is planned for the offshore portion. FF800R17KF6C_B2 is a perfect choice in these fields.

Wind energy turbines must also be intended to deliver maximum levels of availability in order to contribute to grid stability. This applies not only to the converter, but also to the different subsidiary drives mounted in different positions. Grid stability therefore depends on power semiconductor assemblies offering dynamic capabilities, outstanding functionality and superior reliability.

Advantages like high power density for compact inverter designs & standardized housing can be found if we use FF800R17KF6C_B2 in wind power applications.

There has been flourishing global advancement in wind power generation. The sum of power produced using wind-power has raised from 7.5 Giga-Watts in 1997 to 74 Giga-Watts in 2006 with further increment happening at the rate of a doubling of generation every three to four years. It is calculated that 12 percent of the world’s electricity requirements will be supplied by wind-power in 2020. The prominent wind power generators in the world are Germany and Spain, succeeded by the United States. China is also invasively imitating wind-power generation. China blueprints to spend $ 700 Billion until 2020 in renewable energy projects. Huadian Power International Corporation, a China based company has obtained authorization to build two wind power projects with an associated capability of 147 Mega-Watts. Moreover, an Indian company, Suzlon Energy, has become the world’s eighth largest generator of wind turbine generators. Companies have also fixed on wind-power as a significant growth segment in the future.


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Wednesday, March 4, 2015

IGBT Manufacturers - Buy Eupec Infineon FZ1200R12KL4C Bipolar Transistors for Solar Inverters




http://www.USComponent.com. We have been selling IGBT power transistor modules for the last fourteen years from different companies including Infineon and FZ1200R12KL4C is one of our best sellers. We sell original & new parts only. You can trust us in terms of quality because we always try to supply the authentic parts. All of our parts are backed up with 30 days warranty. Please take a look at our website for stock check or technical support or call us at +1 (281)899-0483. 
Today we will know about FZ1200R12KL4C, a 1200A/1200V IHM 130mm single switch IGBT power transistor module with IGBT2 low loss and Emitter Controlled Diode. The weight of this device is 8.82 lbs. It is the perfect choice for your industry applications. Motor Control and Drives, Solar Energy Systems, Wind Energy Systems, Uninterruptable Power Supplies, etc. are the applications it excels at. It is manufactured by famous German manufacturer Infineon Technologies who are specialist in making semiconductors and system solutions by targeting the primary needs of our modern society. Infineon was known as Eupec previously in the world of technology.
High reliableness and solid module construction are the features for which FZ1200R12KL4C is exceptional. This module is recognized by UL too. We will be eligible to get some extra advantages if we use this transistor in our industry applications. High power density can be achieved for compact inverter designs by using this. Standardized housing is another attribute which makes FZ1200R12KL4C unique.
We are going to have a discussion about the implementation of FZ1200R12KL4C in solar inverters.
Solar power has a large potential to provide the electricity needs of the world’s burgeoning population. However, in 2008 solar-power supplied less than 0.02% of the world's total energy supply.
A solar inverter converts variable direct current (DC) output of a photovoltaic (PV) solar array panel to AC voltage. The energy produced from solar panels is used to power household appliances directly, charge batteries or feed electricity directly back to the grid in return for credit against future power bills. All of these applications need AC voltage. The DC voltage produced by the solar array must be converted into a desired well regulated AC power by using an IGBT based inverter. FZ1200R12KL4C provides advantages in solar inverter applications compared to other types of power devices. It delivers low conduction and switching losses resulting in high inverter efficiency. Benefits like high-current-carrying capability, gate control using voltage instead of current and the ability to match the co-pack diode are found when FZ1200R12KL4C is used as the power device in solar inverters.
FZ1200R12KL4C has some major advantages over MOSFETs and bipolar transistors. First, it has very low on-state voltage drops because of the conductivity modulation, in addition to superior on-state current density. These factors allow manufacturers to fabricate devices with smaller chip size and at lower cost. Second, these boast low driving power and simple driving circuits due to the input MOS gate structure. It is simpler to control compared to current controlled devices such as bipolar transistors. Third, FZ1200R12KL4C has fantastic forward and reverse blocking capabilities. These characteristics encourage designers to select this IGBT module for solar inverter applications.



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Monday, March 2, 2015

Buy Fuji Electric IGBT Power Transistor Modules and Power Semiconductor


Buy Fuji Electric IGBTs!

http://www.uscomponent.com/IGBT-Manufacturer/fuji/ We sell good quality and different kinds of Fuji Electric IGBT Power Transistor Modules!

Fuji has come a long way to become the giant electrical company it is today. Fuji, a spinoff company from Siemens, manufactures a multitude of electrical equipment and amongst it all are IGBTs. The IGBT is a high performance 6th generation IGBT/FWD chipset with a compact design that provides for greater power output. It has environmentally friendly modules with easy assemblage, solder-free options, and RoHS compliance. The IGBT turn-on switching characteristics include: improved noise-loss trade-off, reduced turn-on dv/dt, and excellent turn-on dic/dt. Turn-off switching characteristics include: soft switching behavior and turn-off oscillation free.

In 2006 Fuji Electric achieved world-leading level of power loss reduction and down-sizing “New Dual”, a New Product Line of Fifth Generation Fuji IGBT Modules U4 Series.

In 2008 Fuji Electric released New Fuji IGBT Module for High-capacity Industrial Equipment, a new product has been added to the line-up using FDT’s fifth generation IGBT, U4 series

In 2010 Fuji Electric released New Fuji High-Power 2-in-1 IGBT Module Series Designed for Parallel Connections

In 2011 Fuji Electric released New New V-Series Intelligent Power Modules Fuji IGBT Equipped with 6th-Generation IGBT Chips and Capable of the Highest Efficiency in the Industry

In 2011 Fuji Electric released New Fuji IGBT Module for Advanced Neutral Point Clamped (NPC) Circuits Series World’s First Module with a 3-Level Platform in a Single Package

In 2012 Fuji Electric announced it has developed EasyPIMTM insulated gate bipolar transistor (Fuji IGBT) modules fitted with 6th-generation IGBT chips and plans to commence a sales release of this new product lineup.

In 2012 Fuji Electric released a New high-speed, low-loss, Fuji IGBT Module output type intelligent power module incorporating various protective functions, and completed a product series

In 2012 Fuji Electric developed a chip which is constructed such that a Ni-plating electrode is formed on its surface electrodes. 2nd-generation IGBT chips feature an optimized surface trench cell structure, and employ a new field stop structure. Diode chips incorporate an optimized anode layer structure and utilize FZ wafers to improve forward characteristics and improve chip reliability. These improvements make it possible to reduce Fuji IGBT and diode chip sizes, increase system output, and facilitate miniaturization.

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