Boost Your Industrial Power Systems with the Infineon TD111F800KDC Thyristor Module – Available at USComponent

Don’t compromise on quality or reliability. Order your Infineon TD111F800KDC today from https://www.uscomponent.com/buy/Eupec-Infineon/TD111F800KDC and power your projects with proven performance from a trusted electronic components distributor.

Looking for a high-performance solution for your high-voltage, high-current applications? The Infineon TD111F800KDC thyristor module is a trusted component in the world of industrial power electronics. Manufactured by Infineon/Eupec, this half-controlled thyristor module (SCR+R) is engineered for tough, high-demand systems including motor drives, soft starters, inverters, and controlled rectifiers.

Built to handle up to 800A of current and 1000V of voltage, the Eupec thyristor module delivers consistent switching performance with excellent thermal stability. Whether used in industrial automation, railway traction, or high-voltage power module applications, the TD111F800KDC stands out for its durability, power efficiency, and ease of integration.

When sourcing power components, authenticity matters. That’s why engineers and professionals worldwide choose USComponent, the official Infineon distributor, for reliable and fully tested parts. At USComponent, you can buy Infineon TD111F800KDC online with confidence, knowing you're getting 100% genuine components backed by expert support, fast shipping, and competitive pricing.

USComponent is more than just a supplier. As a globally trusted distributor of SCR modules and other power conversion modules, they ensure that your systems operate at peak performance with the highest level of product integrity.

Infineon TT46N12KOF Thyristor Module – Buy Now at USComponent

Browse our product page now https://www.uscomponent.com/buy/INFINEON/TT46N12KOF to check specs, availability, and place your order. Get genuine Infineon thyristor modules with fast shipping and expert support from USComponent.

The Infineon TT46N12KOF is a robust thyristor module rated at 1200V and 46A, engineered for efficient and reliable switching in demanding power control environments. Designed using Infineon’s trusted thyristor technology, this power module delivers high surge capability and long-term performance, making it an ideal choice for AC controllers, soft starters, rectifiers, and static switches. Its pressure contact technology ensures excellent thermal and electrical contact, improving system stability and extending the module’s service life.

At USComponent, we stock only 100% authentic Infineon components—guaranteed. Our customers rely on us as a trusted supplier for industrial power electronics, offering fast global shipping, competitive pricing, and industry-expert customer support. Whether you're sourcing for repairs, upgrades, or large-scale production, the TT46N12KOF is available and ready to meet your high-performance requirements.

What sets the TT46N12KOF apart is its rugged housing, superior thermal handling, and proven performance in high-voltage, high-current applications. The insulated baseplate simplifies mounting while reducing the risk of electrical faults, making installation safe and efficient. Engineers and technicians worldwide depend on this module for its long lifecycle, dependable switching, and compatibility with a wide range of industrial systems.

At USComponent, we are more than just an Infineon distributor—we’re a partner in powering your success. Browse our inventory today and get the Infineon TT46N12KOF module you need, backed by service you can trust.

Revolutionizing Motion Control Systems - BSM35GP120 Infineon IGBT Power Module

 Buy BSM35GP120  and other IGBTs for as low as $1. https://www.uscomponent.com/buy/INFINEON/BSM35GP120.

Introduction:

In the realm of industrial automation, motion control systems play a pivotal role in orchestrating precise movement across a myriad of applications. At the heart of these systems lies the BSM35GP120 power module, a technological marvel developed by Infineon Technologies. This article explores the symbiotic relationship between the BSM35GP120 and motion control systems, elucidating its features, applications, and transformative impact on industrial automation.

Understanding the BSM35GP120:

The BSM35GP120 power module represents a culmination of advanced engineering and innovative design principles, tailored to meet the exacting demands of motion control systems. Infineon Technologies, renowned for its expertise in semiconductor solutions, has meticulously crafted this module to deliver unparalleled performance, reliability, and efficiency in motion-centric applications.

Key Features:

High Power Density: Despite its compact form factor, the BSM35GP120 packs a punch with its high power density. This attribute is instrumental in driving motors and actuators with precision and agility, essential for intricate motion control tasks.

Enhanced Thermal Management: Heat dissipation is a critical consideration in motion control systems, where prolonged operation at high speeds can lead to thermal stress. The BSM35GP120 integrates advanced thermal management features, ensuring optimal temperature regulation and prolonged system longevity.

Precise Power Control: The BSM35GP120 excels in providing precise power control, allowing motion control systems to orchestrate movements with unparalleled accuracy. Whether it's regulating motor speed, adjusting torque, or executing complex motion profiles, this power module delivers consistent and reliable performance.

Integrated Protection Mechanisms: Industrial environments pose inherent risks such as overvoltage, overcurrent, and short circuits, which can compromise system integrity. The BSM35GP120 incorporates robust protection mechanisms, safeguarding sensitive components and ensuring uninterrupted operation in demanding conditions.

Applications in Motion Control Systems:

The versatility of the BSM35GP120 extends across various facets of motion control systems:

Robotics: From precision assembly to automated material handling, robotics rely on precise motion control for optimal performance. The BSM35GP120 drives robotic actuators and motors with precision, enabling seamless motion execution in diverse industrial settings.

Conveyor Systems: Conveyor systems form the backbone of logistics and manufacturing operations, facilitating the seamless movement of goods. The BSM35GP120 powers conveyor motors with efficiency, enabling precise speed control and synchronized operation to optimize throughput.

CNC Machining: In CNC machining applications, precise motion control is essential to achieve intricate cuts and shapes. The BSM35GP120 enables precise control of spindle motors and axes, ensuring high accuracy and repeatability in machining operations.

Packaging Machinery: Packaging machinery requires precise motion control to handle various packaging formats and materials. The BSM35GP120 drives motors and actuators in packaging equipment, enabling smooth operation and efficient throughput in high-speed production environments.

Conclusion:

The BSM35GP120 power module stands as a testament to the relentless pursuit of innovation in industrial automation, particularly in the realm of motion control systems. Its advanced features, coupled with Infineon Technologies' expertise, empower manufacturers to achieve unprecedented levels of precision, efficiency, and reliability in motion-centric applications. As industries embrace automation to enhance productivity and competitiveness, the BSM35GP120 emerges as a catalyst for transformation, reshaping the landscape of motion control systems and propelling industrial automation into a new era of efficiency and agility.

Ready to buy BSM35GP120? Contact sales@uscomponent.com or scan the QR code on the next page.

FF450R12KE4 Infineon IGBT offered by USComponent.com

Please visit https://www.uscomponent.com/buy/INFINEON/FF450R12KE4.

The FF450R12KE4 is a power module designed and manufactured by Infineon Technologies, a leading semiconductor company known for its expertise in power electronics. This module belongs to the IGBT (Insulated Gate Bipolar Transistor) family and is specifically designed for high-power applications such as industrial drives, renewable energy systems, and traction applications.

Here's an introduction to the FF450R12KE4:

IGBT Technology: The FF450R12KE4 utilizes Insulated Gate Bipolar Transistor (IGBT) technology, which combines the advantages of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and bipolar junction transistors. This technology allows for efficient power switching and control in high-power applications.

D

Power Rating: The FF450R12KE4 is rated for high power, typically in the range of several hundred kilowatts to several megawatts. This makes it suitable for demanding applications that require robust and reliable power electronics.

Module Configuration: The FF450R12KE4 is typically configured as a module, encapsulating multiple IGBTs along with associated diodes, gate drivers, and protection features in a single package. This modular design simplifies system integration and enhances reliability.

Voltage and Current Ratings: Specific voltage and current ratings may vary depending on the application and configuration. However, the FF450R12KE4 is generally designed to handle high voltages and currents, making it suitable for use in industrial and high-power applications.

Applications: The FF450R12KE4 is commonly used in various applications such as industrial motor drives, renewable energy inverters (such as wind and solar power systems), traction drives for electric vehicles, and high-power converters for grid-connected systems.

Features: Key features of the FF450R12KE4 may include built-in protection functions such as overcurrent protection, overvoltage protection, and temperature monitoring. These features help ensure safe and reliable operation in challenging environments.

Efficiency and Reliability: Infineon Technologies emphasizes efficiency and reliability in its power modules, and the FF450R12KE4 is no exception. The module is designed to minimize power losses and maximize energy efficiency while offering long-term reliability and robustness.

Overall, the FF450R12KE4 is a high-performance power module suitable for a wide range of high-power applications where efficiency, reliability, and precise control are critical requirements. Its integration of advanced IGBT technology and comprehensive protection features makes it a preferred choice for demanding industrial and renewable energy applications.

Infineon FZ2400R17KF6C-B2 from IGBT Distributor

FZ2400R17KF6C-B2 is a product code for a power module manufactured by Infineon Technologies AG, a German semiconductor manufacturer.

The power module is designed for use in industrial applications, particularly in motor drives and other high-power applications that require reliable and efficient power conversion. It is a six-pack IGBT (Insulated Gate Bipolar Transistor) module that integrates six IGBT power switches and six diodes, all of which are insulated from the heat sink.

The FZ2400R17KF6C-B2 module has a maximum collector-emitter voltage of 1700V, a maximum collector current of 2400A, and a maximum power dissipation of 12.8kW. It operates at a frequency range of up to 8kHz and has a low inductance design for high switching speed.

The module has a compact and robust design with a weight of 2.2kg and dimensions of 160mm x 140mm x 30mm. It also has a built-in temperature sensor for monitoring and protection against overheating.

Overall, the FZ2400R17KF6C-B2 power module is a high-performance and reliable solution for industrial power applications that require efficient and precise power conversion.

Infineon Technologies DD106N16K Diode Bridge Rectifier Module

 DD106N16K is a high-power Diode Bridge Rectifier module manufactured by Infineon Technologies.

Diode Bridge Rectifiers are electronic devices used to convert AC power to DC power. They consist of a bridge of diodes that rectify the incoming AC power and provide a constant DC output voltage. Diode Bridge Rectifier modules are designed to handle high power levels and are commonly used in industrial and commercial applications.

The DD106N16K module consists of six diodes arranged in a bridge configuration, with a blocking voltage of 1600V and a current rating of 106A. It has a compact and robust package design, with a base plate made of aluminum oxide ceramic for high thermal conductivity and electrical isolation.

The module is designed for high efficiency and low power dissipation, making it suitable for high-power applications that require a reliable and efficient operation. It also includes protection features such as overvoltage and overcurrent protection, ensuring safe and reliable operation.

Overall, the DD106N16K Diode Bridge Rectifier module is a high-performance and reliable device suitable for demanding applications that require high power density and efficient operation. Its high current rating and blocking voltage make it ideal for use in industrial and commercial applications such as motor drives, power supplies, and renewable energy systems.

Power Conversion Market May Set New Growth Story | Microchip Technology, Exar, Infineon Technologies

A new business intelligence report released by HTF MI with the title “Global Power Conversion Market Report 2020 by Key Players, Types, Applications, Countries, Market Size, Forecast to 2026 (Based on 2020 COVID-19 Worldwide Spread)” is designed covering the micro-level of analysis by manufacturers and key business segments. The Global Power Conversion Market survey analysis offers energetic visions to conclude and study the market size, market hopes, and competitive surroundings. The research is derived through primary and secondary statistics sources and it comprises both qualitative and quantitative detailing. Some of the key players profiled in the study are Maxim, Artesyn Embedded Technologies, Power-One, Microchip Technology, GE, Exar, Infineon Technologies, Eaton, Emerson & Delta Electronics.

Market Overview of Global Power Conversion

 

If you are involved in the Global Power Conversion industry or aim to be, then this study will provide you an inclusive point of view. It’s vital you keep your market knowledge up to date segmented by Applications [Car Appliances, Outdoor Application & Others], Product Types [, 12V, 24V & 48V and Above] and major players. If you have a different set of players/manufacturers according to geography or needs regional or country segmented reports we can provide customization according to your requirement.

 

This study mainly helps understand which market segments or Region or Country they should focus on in coming years to channelize their efforts and investments to maximize growth and profitability. The report presents the market competitive landscape and a consistent in-depth analysis of the major vendors/key players in the market along with the impact of economic slowdown due to COVID.

TRENCHSTOP™ Performance IGBT Improves Energy Efficiency for Home Appliance and Industrial Applications

On last April 28th, Infineon Technologies AG commenced the latest 600 V TRENCHSTOP™ Performance IGBT offering the next level of competency. The state-of-the-art discrete IGBT delivers high energy efficiency and reliabeness at an aggressive price point for applications like air conditioning, solar PV inverters, drives and uninterruptible power supply (UPS). Based on Infineon’s TRENCHSTOP technology,the latest IGBT is optimized for hard switching topologies working at frequencies of up to 30 kHz. The latest TRENCHSTOP Performance IGBT series incorporates the best trade-off between conduction and switch-off energy losses with exceptional toughness. 5 µsec short circuit capacity and fantastic electromagnetic interference (EMI) behaviour.

The 600 V TRENCHSTOP Performance is a great alternative to the predecessor TRENCHSTOP IGBT from Infineon as well as to contending products. In a plug-and-play replacement the new TRENCHSTOP Performance IGBT yields lessened losses of 7 percent at switching frequency of 8 kHz. A matchless 11 percent lower aggregate loss is delivered for switching frequency of 15 kHz. Making use of the same packages, redesigns for higher efficiency and competitive cost can be realized simply, fast and with less efforts. The 600 V TRENCHSTOP Performance IGBT contributes to more energy efficient power consumption, higher reliability and longer operational lifetime of the application. For end consumers this translates into a lower electricity bill, sustainability and environmental protection.

Nuevo e Innovador Lanzamiento de INFINEON y el Porque Deberías Implementarlo en tu Negocio

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expande su cartera de productos de modulos IGBT ofreciendo con un discreto de 1200 V hasta 75 A. Los dispositivos están co-embalados con un diodo de máxima clasificación en un paquete TO-247PLUS. Los nuevos paquetes TO-247PLUS sirven a la creciente demanda de mayor densidad de potencia y mayor eficiencia en paquetes discretos. Las aplicaciones típicas con una tensión de bloqueo de 1200 V que requieren una alta densidad de potencia son unidades, fuentes de alimentación fotovoltaicas e ininterrumpidas (SAI). Otras aplicaciones incluyen sistemas de carga de baterías y almacenamiento de energía. En comparación con un paquete TO-247-3, el nuevo paquete TO-247PLUS puede proporcionar una clasificación de corriente doble. Debido a la eliminación del orificio de tornillo del paquete estándar TO-247, el paquete PLUS tiene un área de marco de plomo más grande y por lo tanto puede acomodar chips IGBT más grandes.

Ahora, por primera vez, se dispone de hasta 75 A de 1200 V con IGBTs con la misma pequeña huella. El marco de plomo más grande proporciona una menor resistencia térmica del TO-247PLUS, dando lugar a una capacidad mejorada de disipación de calor. Para los diseñadores que buscan mejorar las pérdidas de conmutación, el paquete delTO-247PLUS 4pin cuenta con un pin de fuente de emisor Kelvin extra. Esto permite un bucle de control por la puerta del emisor a su vez lainductancia es ultrabaja y reduce las pérdidas totales de conmutación E (ts) en más del 20% Los IGBTs clasificados como 1200 V como el TO-247PLUS de 3 y 4 paquetes se pueden utilizar para aumentar la densidad de potencia del sistema. Además, pueden reducir el número de dispositivos de alimentación utilizados en paralelo, aumentar la eficiencia del sistema o mejorar las condiciones térmicas del sistema.

Infineon Raises SIC Mosfet to A Whole New Era of Improved Technology

Devices that raise the technology to a  whole new level, using SIC MOSFETS allows conversion to operate at triple or more the switching frequency leading to benefits, something  that was impossible until now, Dr Helmut Gassel, president of infineon`s Industrial Power control said these devices reached a  whole new level which has never before been possible, they are smaller and contain a lighter system for less transportation and easier installation.

As we arrive to a new era filled with new possibilities technology keeps changing, the SiC MOSFETs is a prove of this, it has been optimized to combine reliability with performance. They operate in a magnitude lower than 1200 V, this reduces the dynamic losses and also supports system improvements in applications such as photovoltaic inverters and charger/storage systems among others, this also extend the support to industrial drives and the durable life of the devices.

These  MOSFETS are fully compatible  with +15 V/-5V voltage typically used to drive IGBTs, their structure combines a benchmark  threshold voltage rating (V th) of  4V with a  short circuit robustness which is required by the target applications  and fully controllable dv/dt characteristics, This initially supports system improvements in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) or charger/storage systems, while later configurations will also extend support to industrial drives.

The latest evolution of Infineon`s comprehensive family of cool SiC technologies includes schottky diodes , 1200 V J- FET devices and a  range of hybrid solution that integrates a better battery charging, energy storage and the integration of a  commutation  robust  body diode operating with nearly zero  reverse recovery losses.

For Infineon this is the culmination of years  of experience and improvements, truly something to keep an eye on.

Infineon's New IGBT Saves Money on Electricity

Infineon Technologies has introduced a new family of cost optimized discrete IGBTs that can be dropped into existing designs of low- to mid-price range induction cookers and induction rice cookers.

Induction cooking appliances commonly make use of resonant topologies which allow bi-directional current flow and need a discrete IGBT that performs best at switching frequencies from 18 to 40 kHz with low losses.

The new RC-E family features an IGBT with monolithically integrated reverse conduction diode for resonant switching that is also optimized for low switching and conduction losses. Lower losses allow designers to have efficiency and power targets for induction cooking applications more easily so that less energy is consumed for cooking. With low E off, VF, R th and V ce(sat), the device architecture sets a new industry benchmark in price/performance and ease-of-use.

The INFIPC201610-004 fulfills all the requirements for soft switching applications and efficiency as well as EMI standards with a lower BoM cost. The RC-E is offered in a standard TO-247 package allowing a drop-in replacement for existing designs.

Infineon Reports HybridPACK Double Sided Cooling for October 2016

Infineon Technologies AG displays its most recent force module family HybridPACK™ Double Sided Cooling (DSC) for half and half and electric vehicles at the PCIM 2016 tradeshow. The new power modules have measurements of 42 mm x 42.4 mm x 4.77 mm. They target HEV applications, for example, primary inverters and generators with an ordinary force scope of 40 to 50 kW. So as to backing higher force, they can be utilized as a part of parallel setups.

Infineon Technologies AG presents its latest power module family HybridPACK™ Double Sided Cooling (DSC) for hybrid and electric vehicles at the PCIM 2016 tradeshow. The new power modules have dimensions of 42 mm x 42.4 mm x 4.77 mm. They target HEV applications such as main inverters and generators with a typical power range of 40 to 50 kW. In order to support higher power, they can be used in parallel configurations.

With just 15 NH, the stray inductance is low while blocking voltage was expanded to 700 V. Both variables bolster the advancement of inverter frameworks with lessened exchanging misfortunes of around 25 percent and high productivity. On account of the incorporated disengagement, the module can be straightforwardly connected to a cooler without outside separation accordingly streamlining framework coordination. Each coordinated IGBT chip is furnished with an on-chip current sensor for overcurrent security. Likewise, an on-chip temperature sensor gives derating and quick close off if there should arise an occurrence of over-temperature. The immediate and exact detecting enhances framework observing. It additionally streamlines the practical security engineering of car framework suppliers and auto producers.

By joining twofold sided chip cooling with electrical confinement of the warmth sinks, the warm resistance R thJC of the HybridPACK DSC is altogether diminished to 0.1 Kelvin/Watt (K/W). In examination, today's energy module HybridPACK 1 has a warm resistance of 0.12 K/W. The HybridPACK DSC module innovation additionally enhances the electrical execution. Stray inductance is one noteworthy parameter, characterized by module size and the cautious directing of the present way through the module. The HybridPACK DSC estimation of just 15 nH is around 40 percent lower contrasted with reference modules. The outcome is a lessening of exchanging misfortunes by 25 percent.

Infineon's S5 IGBT is proficient and strong

Infineon Technologies has discharged the S5 IGBT range, taking into account the ultra-slim wafer TRENCHSTOP 5 IGBT. This reach has been created particularly for AC/DC vitality transformation in mechanical applications changing up to 40 kHz, regularly to be found in Photovoltaic Inverters or Uninterruptible Power Supplies.

The S5 gadget is said to highlight productivity levels up to and past 98% giving high vitality yields for sun powered cell establishments and lessened framework costs. It is additionally guaranteed to convey expanded levels of heartiness and quality to help planners in accomplishing up to 20 years of operational lifetime.

The Discrete IGBT highlights enhanced changing conduct to diminish circuit intricacy and general framework costs by killing the need of capacitors and Zener diodes. Likewise, expanded vigor and quality levels are said to be improved further with a 25% expansion in surge current taking care of capacity. The gadget has an ordinary immersion voltage VCE (sat) of 1.60V at 175°C, which means high proficiency can be kept up amid high temperature operations.

Creator

Tom Austin-Morgan

Infineon launchs new 600 V Performance IGBT

Infineon Technologies has dispatched the new 600 V TRENCHSTOP Performance IGBT. The new discrete IGBT is intended to give high vitality productivity and dependability at a focused value point for applications like aerating and cooling, sun based PV inverters, drives and uninterruptible force supply (UPS). In light of Infineon's TRENCHSTOP innovation, the new IGBT is improved for hard exchanging topologies working at frequencies of up to 30 kHz. The new TRENCHSTOP Performance IGBT arrangement joins the best exchange off amongst conduction and switch-off vitality misfortunes with extraordinary heartiness, 5 µsec hamper and astounding electromagnetic obstruction (EMI) conduct.

Simple overhaul – next level productivity

The 600 V TRENCHSTOP Performance is an alluring contrasting option to the forerunner TRENCHSTOP IGBT from Infineon and additionally to contending items. In an attachment and-play substitution the new TRENCHSTOP Performance IGBT yields lessened misfortunes of 7 percent at exchanging recurrence of 8 kHz. An unmatched 11 percent lower complete misfortune is conveyed for exchanging recurrence of 15 kHz. Making utilization of the same bundles, overhauls for higher proficiency and aggressive expense can be acknowledged effectively, quick and with low endeavors. The 600 V TRENCHSTOP Performance IGBT adds to more vitality proficient force utilization, higher unwavering quality and more operational lifetime of the application. For end purchasers this interprets into a lower power bill, supportability and ecological security.

Accessibility

The TRENCHSTOP Performance IGBT is accessible at this point.

Infineon inspecting auto IGBTs

Infineon is examining a group of vigorous 650V IGBTs that can convey most elevated productivity in quick exchanging car applications. Volume creation is booked for March.

The AEC-Q-qualified TRENCHSTOP5 AUTO IGBTs will lessen power misfortunes and enhance unwavering quality in electric vehicle (EV) and half and half electric vehicle (HEV) applications, for example, on-board charging, influence variable amendment (PFC), DC/DC and DC/AC change.

The new IGBTs have a blocking voltage 50V higher than past car IGBTs and accomplish their 'best-in-class' proficiency appraisals because of Infineon's TRENCHSTOP 5 slim wafer innovation.

Contrasted and existing 'cutting edge' advancements, this innovation diminishes immersion voltage (VCE (sat)) by 200mV, parts exchanging misfortunes, and brings down entryway charge by an element of 2.5. Enhanced exchanging and conduction misfortunes likewise bolster lower intersection and case temperatures than option advances, prompting improved gadget unwavering quality and minimizing the requirement for cooling.

By utilizing TRENCHSTOP 5 AUTO IGBTs, planners of electric vehicles will acknowledge productivity picks up that empower expanded cruising ranges or littler battery sizes. On account of HEVs, the productivity enhancements can be utilized to lessen general fuel utilization and drive down CO 2 discharges. Moreover, the execution of the TRENCHSTOP 5 AUTO gadgets permits additionally entering MOSFET overwhelmed applications and offering planners a more extensive range of reasonable semiconductor base advancements.

Highlighting current evaluations of 40A or 50A, TRENCHSTOP 5 AUTO IGBTs are accessible as single discrete IGBT gadget or co-bundled with an Infineon ultra-quick "Fast" silicon diode. For every situation the two variations H5 HighSpeed and F5 HighSpeed FAST can be supplied relying upon whether advanced exchanging speed or most elevated conceivable productivity is the abrogating plan criteria.

For a run of the mill PFC utilized as a part of on-board chargers the substitution of current 'cutting edge' advances by TRENCHSTOP 5 AUTO IGBTs has been appeared to convey a proficiency increment from 97.5% to 97.9%. On account of a 3.3kW charger this compares to a force misfortune lessening of 13W. Expecting a charging time of five hours, this would be equal to diminishing CO 2 emanations by 30g in a sol

Infineon eleva a SIC a una nueva era para el mejoramiento de la tecnología

Aparatos que llevan a la tecnología a un nuevo nivel, usando SIC MOSFETS  permite conversión para operar  al triple o más, el cambio de la   frecuencia  conducen a beneficios, algo que era imposible hasta ahora, Dr. Helmut Gassel, presidente de Infineon´s Industrial Power Control dijo “que estos aparatos  lograron un nuevo nivel que jamás antes había sido posible llegar, son más pequeños y contienen un ligero sistema  para menos transportación y más fácil instalación”.

Así como llegamos a una nueva era llena de nuevas posibilidades que la tecnología siga cambiando, los SIC MOSFETS son una prueba de ello, optimizado para combinar fiabilidad con rendimiento. Operan en una magnitud más baja que 1200 V, esto reduce las perdidas y también apoyan al mejoramiento del sistema en aplicaciones como  Fotovoltaico inversores y sistemas de carga/almacenamiento entre otros, esto también extiende el apoyo  a drivers industriales y a la durabilidad de la vida de los aparatos.

Los MOSFITS son compatibles con +15 V/-5V voltage usados para conducir IGBTs, su estructura combina rango de voltaje de umbral de referencia (V th) de  4V con un corto circuito robusto que es requerido por  la aplicación y totalmente controlable características  dv/dt.  Esto inicialmente apoya a mejoras del sistema en aplicaciones  como Fotovoltaico inversores y sistemas de carga/almacenamiento entre otros, esto también extiende el apoyo  a drivers industriales también se extiende a controladores industrials.

La última evolución  de la familia Infineons de SIC Technology  incluye schottky diodes, 1200 V J- FET aparatos y una gama de soluciones hibridas  que integra una mejor carga de la batería, ahorro de energía y la integración de un cuerpo robusto de conmutación diodo funcionamiento.

Para Infineon  esto es la culminación de años de experiencia y mejoras, realmente algo para tener a la vista.

IPOSIM - The Infineon Power Simulation Program for Loss and Thermal Calculation of Infineon Power Modules and Disk Devices

Infineon owns a  power simulation program that will support you while selecting the right Infineon bipolar modules or disk devices for your rectifier such as (B2, B6, M3.2 and M69 or AC switch (W1C and W3C) applications as well as suited IGBT modules for your inverter needs these could be: single, 3 phase and 2 levels , or even DC converter applications.

This program performs a calculation of switching and conductions losses for all components, keeping an account of the conduction and switching losses as well as thermal ratings, different control algorithms can be applied if it requires to, thermal conditions can be adapted by user defined or predefined heat sinks.

The results will be shown in tabular and graphic representation  and can be saved for later revision or printed as a pdf file.

IPOSIM is just as easy  to use as it sounds  and enables the user to choose the correct Infineon device for their very own need.

This makes Infineon a pioneer in improvements in the IGBT area.

Infineon Raises SIC Mosfet to a Whole New Era of Improved Technology

Devices that raise the technology to a  whole new level, using SIC MOSFETS allows conversion to operate at triple or more the switching frequency leading to benefits, something  that was impossible until now, Dr Helmut Gassel, president of infineon`s Industrial Power control said these devices reached a  whole new level which has never before been possible, they are smaller and contain a lighter system for less transportation and easier installation.

As we arrive to a new era filled with new possibilities technology keeps changing, the SiC MOSFETs is a prove of this, it has been optimized to combine reliability with performance. They operate in a magnitude lower than 1200 V, this reduces the dynamic losses and also supports system improvements in applications such as photovoltaic inverters and charger/storage systems among others, this also extend the support to industrial drives and the durable life of the devices.

These  MOSFETS are fully compatible  with +15 V/-5V voltage typically used to drive IGBTs, their structure combines a benchmark  threshold voltage rating (V th) of  4V with a  short circuit robustness which is required by the target applications  and fully controllable dv/dt characteristics, This initially supports system improvements in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) or charger/storage systems, while later configurations will also extend support to industrial drives.

The latest evolution of Infineon`s comprehensive family of cool SiC technologies includes schottky diodes , 1200 V J- FET devices and a  range of hybrid solution that integrates a better battery charging, energy storage and the integration of a  commutation  robust  body diode operating with nearly zero  reverse recovery losses.

For Infineon this is the culmination of years  of experience and improvements, truly something to keep an eye on.