A la venta un nuevo IGBT DE 4.5 KV

IXYSCorporation una compañía internacional de energía y semiconductores IC, anunció hoy que su filial británica presentó una nueva adición a su familia de 4.5 kV diodos de recuperación rápida (HP-sonic FRD) con una tasa muy alta de cambio de capacidad actual y características de recuperación suave. Tiene una corriente de operación nominal de 460 amperios y está optimizado para ser utilizado en conjunto con la extensa gama de IGBTs de paquete de prensa de IXYS UK. Las nuevas piezas incorporan la tecnología de ensamblaje y proceso más avanzada de IXYS UK, reemplazando los diseños más antiguos basados en silicio flotante. El nuevo diseño de matriz unida ofrece un diodo con estabilidad térmica mejorada y propiedades mecánicas muy robustas. El silicio se optimiza con un procesamiento avanzado para proporcionar di / dt inigualable, el cambio de la capacidad actual, más de 2 kA por microsegundo, conservando al mismo tiempo una característica de recuperación suave y bajas pérdidas de conmutación. Los diodos están empacados en paquetes de cerámica de 26 mm de espesor totalmente herméticos con electrodos de cobre y son compatibles para sujetar en serie en la misma pila que la gama de IGBT de paquete de prensa de alta corriente de IXYS UK. El dispositivo de 460 amperes tiene una matriz de 43 mm y está empaquetado en un paquete de electrodos de 38 mm con un diámetro total de 60 mm. La designación del número de parte para este nuevo integrante de la familia de IXYS es E0460QC45E. El FRD sonic HP está optimizado para su uso con la gama IXYS UK en igbts de 4500 voltios; como diodos de abrazadera de punto neutro y antiparalelo (para convertidores multinivel) con IXYS UKs los modulos transitores T0240NB45E, T0340VB45G y T0510VB45A. Este modulo también es adecuado para usarse como diodo amortiguador con los IGBT de paquete de prensa más grandes de IXYS UK, como el T1600GB45G, el T1800GB45A, el T2400GB45E y el recientemente lanzado T2960BB45E. Lo cual hace de esta novedad una muy completa adición a la familia de modulos de IXYS.

Mitsubishi ansioso por dominar el Mercado

Mientras que muchos podrían ver el mercado de la energía como maduro, Mitsubishi apunta a un crecimiento del 10% en los próximos cinco años para dominar la industria. Su operación de módulos en Hungría, Vincotech, será esencial para este crecimiento, dice Toru Sanada, Oficial Ejecutivo a cargo de Semiconductor & Devices en Mitsubishi Electric en una conferencia en Tokio. Esto sigue a la compra de su empresa conjunta Powerex con GE en los EE. UU. Para enfocarse en dispositivos de potencia automotriz. Esta es una de las cuatro áreas en las que se enfocará el negocio, dice Sanada. Estos son electrodomésticos, automatización de fábricas industriales y energía renovable, transmisión CC y automotriz, y serán impulsados por la fabricación de mayor volumen de dispositivos de potencia de silicio y carburo de silicio (SiC) en obleas más grandes. El mercado global para módulos IGBT será de $ 7 mil millones para el 2022, dominado por aplicaciones industriales y Mitsubishi pretende hacer crecer el negocio de energía a ¥ 20 mil millones ($ 2 mil millones), o el 30% del mercado para entonces, en vez de ¥ 130 mil millones ($ 1.3 mil millones) hoy.

Perspectiva de IGBT en China - el ejecutivo de HHGrace Jiye Yang

El transistor bipolar de puerta aislada (IGBT) es tecnológicamente el dispositivo más avanzado entre los componentes electrónicos de potencia y cuenta con amplias aplicaciones que van desde hornos electromagnéticos pequeños para uso doméstico hasta industrias estratégicas como el tránsito ferroviario, vehículos eléctricos y redes eléctricas inteligentes. Este discreto dispositivo semiconductor se promociona como la "CPU" de las industrias eléctrica y electrónica, con amplias aplicaciones en los campos de la energía verde, los automóviles de nueva energía y la automatización industrial. En los últimos años, la demanda de productos IGBT en China se ha expandido a una CAGR del 15% para representar casi un tercio de la demanda mundial por el momento, y se estima que su escala de mercado llegará a CNY18.600 millones (US $ 28.01 mil millones) en 2020, con más del 90% de los chips IGBT, sin embargo, todavía dependen de las importaciones.

Inspirada en la gran demanda del mercado y respaldada por la política gubernamental, Huahong Grace Semiconductor Manufacturing (HHGrace), con sede en Shanghái, ha desarrollado activamente tecnologías y productos IGBT, y ha ampliado gradualmente sus líneas de productos para incluir chips IGBT para usos comerciales, industriales y de consumo. convirtiéndose en una importante casa de fundición de obleas IGBT en China. En una entrevista reciente de Digitimes, Jiye Yang, director senior de la División I de Integración TD de HHGrace, habló sobre las perspectivas y desafíos del mercado de IGBT en China.

Las estadísticas mostraron que el número de vehículos de nueva energía en China aumentó drásticamente de 20,000 unidades en 2013 a 500,000 unidades en 2016, y un crecimiento anual de producción de más del 30% para tales vehículos producidos en el país también se registró para los primeros ocho El plan de desarrollo de la industria automotriz de ahorro de energía y energía publicado por el Consejo de Estado de China (gabinete) indica que la capacidad de producción anual del país para vehículos eléctricos híbridos totalmente eléctricos y enchufables (PHEV) se estima en dos millones. unidades para 2020, traduciéndose en una demanda del mercado por un equivalente de un millón de piezas de obleas IGBT de ocho pulgadas; y su producción acumulativa y ventas de vehículos eléctricos superaría los cinco millones de unidades para el final de ese año, mostrando una demanda de 2,5 millones de piezas de las mismas obleas. El mercado es realmente muy grande. Un desglose adicional mostraría que los módulos IGBT representan el 10% del costo de producción de vehículos de nueva energía y el 20% del costo de la estación de carga. Se estima que los vehículos de nueva energía y las estaciones de carga crearían CNY20 mil millones en la demanda del mercado de módulos de IGBT en los próximos cinco años.

Complete IGBT Gate Drivers from Power Integrations

SCALE-2 IGBT gate drivers from Power Integrations include galvanic isolation, protection, and DC/DC conversion in a single module, and are suitable for driving power mosfets and devices based on new materials such as silicon carbide (SiC) operating at switching frequencies up to 500kHz. each type is based on an asic chip-set that integrates the full functionality of a dual-channel gate driver core in a primary-side chip logic-to-driver interface and a secondary-side chip intelligent gate driver. They are available with blocking voltage capabilities from 600V to 6,500V and from 1W to 20W per channel drive. To ensure optimum performance for direct driving of external n-type DMOS elements, the pre-driver stages of each of the modules incorporate separate gate resistors for independent control of on/off functionality. There are single- and dual-channel options, and applications are expected in industrial, motor control, power transmission, traction, solar, wind and automotive.

Global IGBT Market 2017 - 2021

Market research analysts at Technavio predict that the global IGBT market will grow steadily at a CAGR of around 12% by 2021. The rising demand for electric (EV) and hybrid electric vehicles (HEV) is identified as one of the primary growth factors for this market. Government initiatives for controlling the rising environmental concerns and oil prices are driving the shift to electric vehicles. It is estimated that EVs and HEVs can lower the oil consumption by more than one-third by 2020 as electricity is cheap and provides a big cost advantage over gasoline and petroleum. Moreover, electric vehicles are more energy-efficient as they convert about 60% of the electrical energy from the grid to power wheels, whereas their conventional vehicles convert only about 20% of the electrical energy. Electric motors provide quiet, smooth operations and require less maintenance than combustion engines. IGBT is a vital component that is needed to minimize switching loss and maximize the thermal efficiency. IGBTs play a significant role in the smooth operations of electric vehicles in transferring power to the grid at a steady rate. With the increase in adoption of EVs and HEVs around the globe, the IGBT market will witness significant growth in the forthcoming years. In terms of geographic regions, APAC will be the major revenue contributor to the IGBT market throughout the forecast period. Rapid industrialization in the developing countries of the region and the increasing adoption of renewable energy and electric vehicles drive the growth of the IGBT market. Additionally, the growing demand for energy-efficient solutions at the industrial and consumer industries is also contributing to the growth of the IGBT market in APAC.

Informe de los Transistores bipolares de puerta aislada global (IGBT)

El análisis de mercado 2016 y predicción de tendencias del mercado 2022 por fabricantes, regiones, tipos y aplicaciones Este informe ofrece una visión general inclusiva y de toma de decisiones, que incluye definiciones, clasificaciones y sus aplicaciones. Se prevé que el mercado del Transistor Bipolar de Puerta Aislada (IGBT) refleje una tendencia positiva de crecimiento en los próximos años. Las fuerzas motrices esenciales detrás del crecimiento y la popularidad del mercado del Transistor Bipolar de Puerta Aislada (IGBT) se analizan detalladamente en este informe.

Este articulo describe con más detalle la información sobre tácticas y estrategias utilizadas por las principales compañías clave en la industria del transistor bipolar de puerta aislada (IGBT). También ofrece un amplio estudio sobre diferentes segmentos de mercado y regiones. Acá se explica los asuntos mas importantes del transistor bipolar de puerta aislada (IGBT) ofrece un análisis exhaustivo de la siguiente manera: Segmentos de mercado y subsegmentos Tamaño de mercado y participaciones Tendencias y dinámicas del mercado Controladores del mercado y oportunidades Panorama competitivo Oferta y demanda Invenciones tecnológicas en la industria del transistor bipolar de puerta aislada (IGBT) Tendencia de desarrollo del canal de marketing Posicionamiento en el mercado de transistores bipolares de puerta aislada (IGBT) Estrategia para colocar precios Estrategia de marca Cliente objetivo Lista de distribuidores / comerciantes incluida en el mercado de transistores bipolares de puerta aislada (IGBT)

Informe de crecimiento de los modulos igbt en los meses de junio-noviembre 2017

El segundo trimestre del año que corre asi como el preambulo al año 2018 muestra un importante avance en las cifras de mercadeo de los modulos transitores bipolares IGBT, algo que nos vislumbra nuevos acercamientos para los informes de los años por venir, hasta ahora poco a poco el mercado de instrumentos que usan estos modulos ha ido creciendo mas y mas. El informe de mercado del módulo IGBT cubre los datos del fabricante, incluidos: envío, precio, ingresos, beneficio bruto, registro de entrevistas, distribución comercial, etc., estos datos ayudan al consumidor a conocer mejor a los competidores. Este informe también cubre todas las regiones y países del mundo, que muestra un estado de desarrollo regional, incluido el tamaño, el volumen y el valor del mercado del Módulo IGBT, así como los datos de precios.

Con la desaceleración en el crecimiento económico mundial, la industria del Módulo IGBT también ha sufrido un cierto impacto, pero aún mantuvo un crecimiento relativamente optimista, los últimos cuatro años, el tamaño del mercado Módulo IGBT para mantener la tasa de crecimiento anual promedio de 6.50% de 3220 millones de dólares en 2013 a 3890 millones de dólares en 2016, los analistas de mercado creen que en los próximos años, el tamaño del mercado del Módulo IGBT se ampliará aún más, esperamos que para el 2021, el tamaño del mercado del Módulo IGBT alcance los 5260 millones de dólares.

FZ1200R12KL4C - A Good Solution for Solar Energy Systems

Today we will know about FZ1200R12KL4C, a 1200A/1200V IHM 130mm single switch IGBT power transistor module with IGBT2 low loss and Emitter Controlled Diode. The weight of this device is 8.82 lbs. It is the perfect choice for your industry applications such as Motor Control and Drives, Solar Energy Systems, Wind Energy Systems, Uninterruptable Power Supplies, and etc. It is manufactured by famous German manufacturer Infineon Technologies who are specialist in making semiconductors and system solutions by targeting the primary needs of our modern society. Infineon was known as Eupec previously in the world of technology. High reliableness and solid module construction are the features for which FZ1200R12KL4C is exceptional. This module is recognized by UL too. We will be eligible to get some extra advantages if we use this transistor in our industry applications. High power density can be achieved for compact inverter designs by using this. Standardized housing is another attribute which makes FZ1200R12KL4C unique. We are going to have a discussion about the implementation of FZ1200R12KL4C in solar inverters. Solar power has a large potential to provide the electricity needs of the world’s burgeoning population.

However, in 2008 solar-power supplied less than 0.02% of the world's total energy supply. A solar inverter converts variable direct current (DC) output of a photovoltaic (PV) solar array panel to AC voltage. The energy produced from solar panels is used to power household appliances directly, charge batteries or feed electricity directly back to the grid in return for credit against future power bills. All of these applications need AC voltage. The DC voltage produced by the solar array must be converted into a desired well regulated AC power by using an IGBT based inverter. FZ1200R12KL4C provides advantages in solar inverter applications compared to other types of power devices. It delivers low conduction and switching losses resulting in high inverter efficiency. Benefits like high-current-carrying capability, gate control using voltage instead of current and the ability to match the co-pack diode are found when FZ1200R12KL4C is used as the power device in solar inverters.

FZ1200R12KL4C has some major advantages over MOSFETs and bipolar transistors. First, it has very low on-state voltage drops because of the conductivity modulation, in addition to superior on-state current density. These factors allow manufacturers to fabricate devices with smaller chip size and at lower cost. Second, these boast low driving power and simple driving circuits due to the input MOS gate structure. It is simpler to control compared to current controlled devices such as bipolar transistors. Third, FZ1200R12KL4C has fantastic forward and reverse blocking capabilities. These characteristics encourage designers to select this IGBT module for solar inverter applications. Young & New Century LLC is located at Houston in Texas, United States. Our official website is http://www.uscomponent.com. We have been selling IGBT power transistor modules like FZ1200R12KL4C for the last fourteen years. We sell original & new parts only. You can trust us in terms of quality because we always try to supply the authentic parts. All of our parts are backed up with 30 days warranty. Please take a look at our website for stock check or technical support.

FZ1200R16KF4 - A Reliable IGBT from Infineon

FZ1200R16KF4 is a 1600V IHM 130mm single switch IGBT (Insulated Gate Bipolar Transistor) Module with IGBT2 which is made by Infineon, formally known as Eupec who is one of the leading manufacturers and suppliers of semiconductors and system solutions. It is a 3-phase full-bridge power module including fast free-wheel diodes package with insulated metal base plate. It is the best solution for your traction and industry applications. In terms of energy, there are three central requirements of our modern society. They are: efficiency, mobility and security. Infineon provides semiconductor and system solutions, focusing on these three central needs.

Modern train traction systems use high-speed switching IGBTs in main circuits. High-speed switching reduces electromagnetic noise generated by the main motor and improves the efficiency of energy conversion. For the inverter control system, vector control is employed to control the torque current component and the exciting current component separately, which are output to the induction motor.

In modern, intense and heavy traction applications like: locomotives, long-distance trains, metros and trams, which move on a world-wide variety of railroad networks, FZ1200R16KF4 is employed. You can find them in metro drive systems, in innovative, high speed trains and in auxiliary inverters. There is hardly any other application that puts such high demands on the components as traction. High quality, reliability and lifetime are the most important product features in this market segment. FZ1200R16KF4 has advantages like ongoing development for higher voltage and current ratings and these benefits makes them really obligate in traction appliances. There is barely any other application that puts such high pressure on the components as traction. One important requirement is the ability to withstand power cycles. Power cycles cause temperature changes which lead to a mechanical stress that can turn into a failure. High quality, reliability and lifetime are the most important product features in this market segment. FZ1200R16KF4 is a very capable device which can fulfill all these requirements.

Due to its advantages in terms of fast switching, ruggedness, simplicity of gate drive and ease of use, the use of Infineon modules is widespread. While the IGBT can limit and commutate current due to normal fault events, the traction environment may present situations where extensive energy is conducted through the module. Compared to alternative solutions, these can reduce 40 to 50% in inverter cost, weight, and volume. However, the fast switching operation requires special attention to reduce the circuit inductance to avoid overvoltage at switching. Another issue worth consideration is the ability of the module to manage faults without allowing extensive rupture or explosion.

By providing the latest technology, Infineon’s solutions allow their customers to enjoy the benefits of standardized housings combined with maximum reliability. They offer wide portfolio of innovative components tailored to needs of various traction and auxiliary inverters.

http://www.uscomponent.com is an IGBT distributor selling Eupec Infineon IGBTs such as FZ1200R16KF4. They have an exceptional quality control team who know how to take necessary steps to make sure that the quality of all of the parts they’re selling is high. Please do not hesitate to send us an email sales@uscomponent.com for stock check or tech support.

FZ1200R12KF5 - Perfect IGBT for Motor Control

FZ1200R12KF5 is a TRANS IGBT (Insulated Gate Bipolar Transistor) module N-CH 1200V 78A 7Half-Bridge. This module is manufactured by Infineon Technologies, Germany previously familiar as Eupec who is one of the prime manufacturers and suppliers of semiconductors and system solutions. The best applications of FZ1200R12KF5 are DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers & welders. In case of power & energy, efficiency, mobility and security are three basic needs of this modern society. Infineon has sorted their product lineup by considering these facts. FZ1200R12KF5 is an IGBT device that combines the voltage characteristics of a biopolar transistor (collector – emitter) and the drive characteristics of a MOSFET.

Prior to 1990s, the only available power semiconductor switching device was silicon GTO which had the power manipulation capability compatible for motor control applications. In the 1990s, the ratings of IGBTs had adequately advanced, to exceed one Mega-Watt allowing penetration of the IGBT into this traction market. The availability of the IGBT allowed significant improvements in the motor drive technology due to elimination of snubber circuits and an increase in the operating frequency of the inverter circuit used to deliver power to the motors. FZ1200R12KF5 is an IGBT device from Infineon which is used frequently for electric motor control.

The Motor Control Unit (MCU) is the vital part of a 100% electric-powered vehicle as it handles and regulates the electrical power supply to the electric motor to generate the necessary level of torque to power the vehicle by converting the battery packs DC voltage into three-phase AC. Inversely, the MCU is responsible for managing the electrical energy that is generated by the regenerative braking system and is fed back into the lithium-ion battery pack.

The crucial electrical components accommodated within the Motor Control Unit are a smoothing condenser to help stabilize the DC current, several FZ1200R12KF5 convert the DC electrical current into AC, a heat sink to provide cooling/heat dissipation and a control board that supervises the electric motor. The control board is located in a separate area within the MCU from the smoothing condenser, the IGBTs and the heat sink to protect it from the heat generated by these components.

Infineon Technologies has developed voltage-source inverters for AC motor drive systems with IGBT based inverters serving applications under 3,600kVA and GTO thyristor inverters for higher power levels. Because steel manufacturing lines use so many variable-speed motors, size reductions in the motor drive units can contribute to substantial savings in factory floor space that reduce investment costs. High-power-factor converters are another focus of technology development since these converters produce less reactive power and introduce lower levels of power line harmonics. FZ1200R12KF5 is an IGBT device being used in the inverters for such AC/DC motor drive systems.

http://www.uscomponent.com has been selling IGBT power transistor module including FZ1200R12KF5 since 2001. We have a dedicated quality control team unlike any supplier which always tries their best in order to maintain a quality. We sell original and new parts electronic parts only. Please visit our website for stock check or tech support.

UK Technology is Used in $240m Chinese IGBT Plant

A $240m IGBT (Insulated Gate BipolarTransistor) manufacture plant has been commenced by Zhuzhou CSR Times Electric Co, a semiconductor maker from China. The company has done this by comprising technology enhanced by Dynex Semiconductor, its supplementary in the United Kingdom. This plant is mentioned to be the first of its category in China and the second all over the world.

Using eight-inch silicon wafers, high performance IGBT modules and chips will be produced in this new factory which is located in Zhuzhou. Output is supposed to touch 120,000 wafers and 1 million IGBT modules every year in the first stage of the operation CSR’s recently formed semiconductor business is managing the latest IGBT range. Its European subsidiary is Dynex.

The multinational CSR Zhuzhou Research & Development Centre is located at Dynex’s site in Lincoln, United Kingdom. The centre was set up in 2010 to focus on cutting-edge power semiconductor technology and, particularly, on the succeeding generation of IGBT products. The technology is being used to make new IGBTs in the new facility has been developed in this R&D centre.

Over two years were needed by the latest production line to be built. Technical advice, support, staff training were provided by Dynex throughout this process, both in China and in Lincoln.

IGBTs are a crucial part in high-efficacy electrical power transformation systems used in variable-speed motor drives, uninterruptable power supplies, power grids, trains, renewable power plants and electric and hybrid electric vehicles. Using the latest soft-punch-through field-stop and trench technologies, high-power modules will be manufactured initially by the new range.

Dr Paul Taylor, president and CEO of Dynex says, “Since the acquisition of Dynex by CSR Times Electric in 2008, there has been a rapid development in our IGBT capability.”

“Since the acquisition of Dynex by CSR Times Electric in 2008, there has been a rapid development in our IGBT capability,” says Dr Paul Taylor, president and CEO of Dynex. “We began with four–inch wafers, then upgraded to six-inch at our plant in Lincoln. We then extended our technology to support the design of this new facility. It complements our base in the UK by giving us access to a world-leading eight-inch IGBT wafer fabrication facility and a high-volume module assembly line.

“Our rapid development does not stop there,” he adds. “The new line has been kitted out with the latest equipment, and the next phase of expansion is already being planned. This targets key markets such as electric automotive and renewable energy. So at our UK R&D Centre, we are already working on designing the next generation of advanced silicon and silicon carbide power devices, and are busy recruiting new staff to expand our multinational research, design and development teams to meet this exciting new challenge.”

http://www.uscomponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

http://www.uscomponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.