Fairchild Semiconductor is extending its rising
product line of automotive-category semiconductor solutions for hybrid electric
vehicles (HEV), plug-in hybrid electric vehicles (PHEV) and electric vehicles
(EV) with its new detached and bare die IGBTs and diodes. These IGBTs and
diodes are perfect for traction inverters, nucleus of all HEVs, PHEVs and EVs
that alter the batteries' electricity from direct current into the three-phase
alternating current needed by the vehicle’s drive motors.
These new discrete and bare die IGBTs and
diodes utilize state-of-the-art third generation Field Stop Trench IGBT
technology and a soft fast recovery diode is eligible for automotive-grade
standards and has extra features and options. The mix of these innovations,
characteristics and options enables Fairchild to supply products with a tight
parametric ordination for both discrete and bare die solutions.
Fairchild's latest FGY160T65SPD_F085 and
FGY120T65SPD_F085 discrete IGBTs are appropriate to traction inverters and other
HEV/PHEV/EV powertrain stuffs that need high power density and high
reliableness.
Supplementing their performance and
reliableness is the adaptability these discrete IGBTs offer designers to modify
their products. Designers can just add IGBTs in parallel to accomplish the
needed system power rating, while also enhancing the total efficiency of their
traction inverter or other powertrain component designs.
Fairchild is also making declaration about the
availableness of its PCGA200T65NF8 rectifiers and PCRKA30065F8 bare die IGBTs
and diodes for automakers and automotive parts suppliers making their own power
modules for high performance traction inverters and other motor-driving
components.
Fuji Electric is famous for their transistor
modules for high speed switching applications. They have comprised another
lineup of power semiconductors to its product portfolio with the “High-Speed W”
Series of high-speed discrete IGBTs. The latest product series utilizes a
slender IGBT chip to miniaturize, as a result of this, lessening power loss
(turnoff loss) in switching operation by nearly 40% in comparison to standard
products (High-Speed V Series). This plays a part in energy saving and power
cost decrease of the devices on which the products are mounted. Loss in
switching operation has also been minimized (subdued heat propagation) for
compatibility with higher switching frequencies (20 to 100 kHz) in comparison
to standard products (around 20 kHz).
“The introduction of the High-Speed W Series is
a valuable addition to our product portfolio as it offers our customers
advanced features that they need to compete in today’s market,” said Jeff
Knapp, General Manager of Fuji Electric’s Semiconductor Dept. “The new IGBT
allows the ability to downsize the peripheral parts such as coils and
transformers within the system and therefore contributes to the overall
downsizing of the equipment itself, leading to a reduction in the total cost of
ownership.
” The company refers the expanding worldwide
need for energy in the current years as the main impetus behind the development
of the High-Speed W Series. The ever-increasing demand for the energy-efficient
performance of industrial and communications equipments along with the need for
downsizing and space-saving of the equipment itself imbued them to bring in a
high-speed discrete IGBT that fulfilled these needs.
