IGBT Overview

IGBT is a four layer, semiconductor device that consolidates the voltage attributes of a bipolar transistor (collector – emitter) and the drive qualities of a MOSFET. The idea was initially reported in a Japanese patent by Yamagami, which was recorded in 1968. The principal devices were of a planar innovation, yet all the more as of late vertical, trench devices have been made prevalent.

The prominence of the IGBT has taken off as of late because of an increment in high voltage, high power applications at which they exceed expectations. While the exchanging rates are slower than a MOSFET, the Vce(sat) attributes are a noteworthy change over those of a MOSFET at high ebbs and flows, particularly for high voltage devices. They are accessible in a scope of voltage evaluations from 300 to in excess of 1200 volts and current appraisals of 15 to 100 amps for a solitary bite the dust. IGBT modules have current evaluations well into the 100s of amps. The scope of evaluations of an IGBT make it appropriate for high power applications, for example,

• Electric vehicle engine drives

• Appliance engine drives

• Power element redress converters

• Solar inverters

• Uninterruptable force supplies (UPS)

• Inductive warming cookers

• High recurrence welders

DEVICE STRUCTURE

Vertical cross- -areas of a planar n- -divert IGBT are indicated in Figure 1. Corresponding P- -channel IGBT's likewise exist, however have higher on- -state misfortunes and hook -up more effectively than N- -channel Igbt's. These cross- -segments demonstrate a solitary IGBT cell, regularly 2 to 10mm wide, where the items are composed by incorporating a few million cells in a solitary silicon chip to give 10's and 100's of amperes of current relying upon the voltage rating.

Numerous peculiarities of Igbts are adjusted from force Mosfets with high cell densities on these miconductor kick the bucket to accomplish the coveted current rating. Be that as it may because of the device idea of IGBT with conductivity of tweak it can deal with a much higher current thickness contrasted with a MOSFET. The high present thickness empowered by an IGBT allows 3xdie size reduction for 600 V, and the playing point for the IGBT builds further as the voltage increments.

A downside for planar IGBT is that current stream is choked between the p+ tubs in what is known as the JFET district. Despite the fact that systems are utilized to build bearer focus in the JFET, this district keeps on poing a constraint to planar gated devices. The channel operation of an IGBT is the same as the MOSFET conduction, however since an IGBT has a P+ posterior collector, the channel current serves as the base present to enact a PNP bipolar transistor. Since a BJT is a conductivity—balanced device the voltage drop (Vcesat) in the IGBT is altogether lessened. Hence the mystery of a productive IGBT is consolidating the voltage controlled MOS door with high include safety, and a low V Cesat bipolar transistor. As seen in the vertical cross area, the IGBT is made out of a four layer NPNP semiconductor. It is essential to stifle this parasitic NPNP thyristor device by controlling the increases of the interlocked Bjts structuring the thyristor. The parasitic NPN transistor is intended to be dormant, as its emitter- -base intersection is shorted out by the MOSFET source metal. Subsequently the essential IGBT is a vertical wide- -base PNP transistor, with its base drive gave by the surface MOSFET. The straightforward four layer device has a few disadvantages influencing exchanging and Soa.To overcome these limitations several techniques are devised in modern IGBTs to modify the vertical structures as IGBT design has progressed over the past three decades.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Our customer includes Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

www.USComponent.com have a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

Comparison Between IGBT and Mosfet

Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) and Insulated Gate Bipolar Transistor (IGBT) are the two most popular versions among various types of switch-mode power supply (SMPS) transistors are available today. It has been observed that MOSFETs are suitable for low-voltage, low-current and high switching frequencies. On the other hand, IGBTs are favorable for high-voltage, high-current and low switching frequencies.

There may be an argument that on which device works better in SMPS applications, the fact is this: there’s no common norm to specify which device performs better in a particular category of circuit. It differs from application to application, and a wide range of factors, such as speed, size, and cost, all play a role to ordain the exact choice.

Now we are going to enlighten on the differences between these two transistors rather than say that one is better than the other straight away.

The MOSFET is a three-terminal fully-controlled switch. Gate, drain and source are its three terminals. The gate/control signal occurs between the gate and source, and its switch terminals are the drain and source. The gate itself is made of metal. A metal oxide separates it from the source and drain. This grants for reduced power draining and makes MOSFET an excellent option to use as an electronic switch or common-source amplifier.

To operate satisfactorily, a positive temperature coefficient has to be sustained by MOSFETs. As a result of this, there’s little-to-no chance of thermal runaway. On-state losses are lower because the transistor’s on-state-resistance, theoretically speaking, has no limit. Also, MOSFETs can carry through fast switching applications with little turn-off losses because they can function at high frequencies.

The IGBT is also a three terminal (gate, collector, and emitter) full-controlled switch. Its gate/control signal takes place between the gate and emitter, and its switch terminals are the drain and emitter.

The IGBT puts the common gate-drive feature found in the MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor at the same time. It does this by utilizing an isolated gate field effect transistor for the control input, and a bipolar power transistor as a switch.

Turning on and off rapidly are the specific characteristics of IGBT. Actually its pulse repetition frequency really gets into the ultrasonic extent. This identical ability is why IGBTs are frequently implemented in amplifiers to synthesize complex waveforms with pulse width modulation and low-pass filters. IGBTs are also used to yield big power pulses in fields like particle and plasma physics, and have set up a role in modern appliances like electric cars, trains, elevators, refrigerators, vacuum cleaner etc.

These transistors are very similar in terms of structures. When it comes to electron current flow, a significant difference is the addition of a p-substrate layer beneath the n-substrate layer in the IGBT. In this extra layer, holes are injected into the highly-resistive n-layer, generating a carrier overflow. This increment in conductivity within the n-layer assists to lessen the total on-state voltage of the IGBT. Unfortunately, it also obstructs reverse current flow. As a result, an extra diode (often referred to as a “freewheeling” diode) gets placed parallel with the IGBT to conduct the current in an inverse direction.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

www.USComponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

Fuji IGBT Overview

Picking the right IGBT for the proper application is not a little assignment – there are a wide range of setups from various semiconductor producers. Fuji Electric's first mass-delivered module was a 2-in-1 Buck-Boost for a major Japanese automaker. From that point forward, the organization has experienced various emphases, and presently has a few standard offerings of auto evaluation modules, including 6-in-1 bundles appraised for 650 V, 400 A and 600 A

With each one passing model year, the prerequisites requested of car force hardware increment. Business strengths are pushing Insulated Gate Bipolar Transistor (IGBT) modules towards lighter, littler, all the more compelling and more dependable engineering. These exchanging gadgets are what power an EV or half breed inverter, and with progressively stringent emanations necessities, automakers are searching for more creative answers for force their next charged items.

"We have yet to see the brilliant age of the electric auto," Nitesh Satheesh, Semiconductor Application Engineer at Fuji Electric, told Charged. "At the same time that day is not very far away and we are get ready to serve it."

Fuji Electric, initially settled in 1923, started mass-creating auto IGBT modules in 2005. The organization ceaselessly strives to attain to a zero-deformity future and, to that end, is always executing new mixes of configuration and procedure control procedures, consolidated with screening and centered unwavering quality building.

In 2008 Fuji Electric released New Fuji IGBT Module for High-capacity Industrial Equipment, a new product has been added to the line-up using FDT’s fifth generation IGBT, U4 series.

In 2010 Fuji Electric released New Fuji High-Power 2-in-1 IGBT Module Series Designed for Parallel Connections.

In 2011 Fuji Electric released New New V-Series Intelligent Power Modules Fuji IGBT Equipped with 6th-Generation IGBT Chips and Capable of the Highest Efficiency in the Industry.

In 2011 Fuji Electric released New Fuji IGBT Module for Advanced Neutral Point Clamped (NPC) Circuits Series World’s First Module with a 3-Level Platform in a Single Package.

In 2012 Fuji Electric announced it has developed EasyPIMTM insulated gate bipolar transistor (Fuji IGBT) modules fitted with 6th-generation IGBT chips and plans to commence a sales release of this new product lineup.

In 2012 Fuji Electric released a New high-speed, low-loss, Fuji IGBT Module output type intelligent power module incorporating various protective functions, and completed a product series.

In 2012 Fuji Electric developed a chip which is constructed such that a Ni-plating electrode is formed on its surface electrodes. 2nd-generation IGBT chips feature an optimized surface trench cell structure, and employ a new field stop structure. Diode chips incorporate an optimized anode layer structure and utilize FZ wafers to improve forward characteristics and improve chip reliability. These improvements make it possible to reduce Fuji IGBT and diode chip sizes, increase system output, and facilitate miniaturization.

A framework's topology is the thing that manages the size and practical necessities of the force module. One-engine frameworks for cross breeds regularly have a parallel association of the burning motor and the electric engine/generator. That implies the force framework can either be in motoring or producing mode, however not both.

Fuji Electric is effectively meeting expectations with accomplices to upgrade new arrangements, and will soon report its up and coming era of car force modules for the general business sector. The organization has taken a two dimensional methodology to rapidly adjust to market necessities, with an arrangement of "standard" Automotive Power Modules manufactured to auto gauges of dependability, and the "custom" Power Modules/Imps

Configuration builds dependably face exchange offs in the middle of expense and execution, and making lightweight cooling answers for IGBTS is an exemplary case, with aluminum contending to be an ease and lighter option to copper.

Now Fuji Electric is trying to create an aluminum cooling arrangement with execution equivalent to, if not more prominent than, that of its copper cooling framework.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

www.USComponent.com have a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

IGBT and Public Transit

Suburban railway systems, one of major public transit tools, are trusted by a huge number of mass people from all over the world for their regular travel to and from work. Beside the urban transit system, electric trains have turned into a common way for travelling within metropolises in Europe and Asia. Very fast bullet trains in China, Japan and Europe enable journey by massive numbers of people by not consuming fossil fuel. Petrol/octane fueled cars and gasoline powered aircraft liquidates fossil fuel which is very bad for our environment. IGBT develops the motor drive technology greatly by ejecting snubber circuits and enhancing the operating frequency of the inverter circuit implemented to provide power to the motors.

Train traction has become one of the utmost taxing applications for power electronic modules due to the tough weather influences like moisture, dust and comprehensive temperature span. Power electronic gets into trouble from the trembles within the trains besides the electric and thermal load. The high number of acceleration and deceleration rounding operation causes extreme demands concerning power and thermal-cycling ability.

High potent IGBT modules are applied to meet the special needs of this particular infliction. These modules are specifically designed to be used in transportation and analogous applications. For achieving dependable, secure and cost-effective operation, IGBT devices in voltage classes 3.3KV, 4.5KV and 6.5KV with improved mechanized and thermic features are placed in trains around the world.

High-speed switching IGBTs are used in main circuits by modern train traction systems. This high-speed switching lessens electromagnetic noise which is generated by the primary motor and enhances the efficiency of energy conversion. Traction system for trains employ an induction motor as the main driving motor and a VVVF inverter as a control unit, and they have improved remarkably as AC equipment especially because the main circuit semiconductor elements have rapidly improved.

Today, more than 20 years after the initiation of application, new equipment is 100% designed for AC driving. Since the history of the shift to AC has largely depended on the technological advancement of main circuit semiconductors, Mitsubishi Electric Corporation is in an advantageous position in the industry, with the development of main circuit semiconductors, the manufacturing of chips, and the assembly tests of conductors all performed successively within the company.

Recently main circuit semiconductors usually employ a two-level main circuit configuration, consisting of IGBTs that can perform driving control with low power consumption, and an intelligent power module (IPM) that is equipped with a driver and protection functions. The main circuit semiconductors available today have much more delicate mechanisms which are becoming closer to ideal converters.

USComponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

USComponent.com have a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

Characteristics of the IGBT

IGBTs or integrated gate bipolar transistors to give them their full name are semiconductor components with highly specific uses. They are similar in a way to power transistors but have significant differences in the way they are controlled. Power transistors are controlled by the amount of current flowing across their base in contrast to IGBTs which are controlled by the voltage applied to their gate. The characteristics of the IGBT make them more of a combination of a power transistor and a MOSFET (metal-oxide semiconductor field effect transistor).

The IGBT is most commonly used in applications where high frequency power switching is needed. One of the reasons why the IGBT works well for this purpose is that only a tiny amount of current is needed applied to its gate. The current is only very small because of high impedance at the control gate. IGNTs are not only able to be switched much more rapidly than other types of semiconductor but they also have other desirable characteristics, especially the fact that they can be used at high voltages.

High power, high frequency devices work by turning the current on and off rapidly with the help of a switching device. Apart from IGBTs, other switching components include MOSFETS and bipolar transistors. An oscillating device is used to control the IGBT or other type of switch.

One common application of IGBTs is in a high voltage electric motor. The voltage used by the motor is converted from DC to AC with the IGBT controlling the frequency at which the AC is provided. There are three different types of motors which may have IGBTs incorporated into their control device. These are

• A three phase induction type motor

• A three phase brushless motor with sinusoidal BEMF

• A three phase brushless motor with trapezoidal BEMF

The motor drive may be either of a sinewave or squarewave type. Sinewaves are preferred where RF interference might be a nuisance, although squarewave drives are actually the more efficient of the two.

Of the three motor types, the first one, the induction motor tends to have a sinewave type drive, although there are high and low pulses in any wave phase noticeable.

The other two types of motor use magnets instead of rotors that are found in induction motors. These motor types are somewhat more expensive than induction motors, but more efficient. The main difference between the two types of brushless motor is the type of wave produced by their drives: some are trapezoidal, others are sinewave.

In all these motors, there are three phases involved and six transistors. MOSFETs tend to be the preferred choice at lower voltages, say 200 volts or less, but for higher voltages, the IGBTs are preferred. IGBTs can handle voltages of up to 1200 volts.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

www.USComponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

IGBT with Electric Car

IGBT (Insulated Gate Bipolar Transistor) is a comparatively recent device which is well-known for its high efficiency and speedy switching, making it ideal for applications where preserving energy and protecting the environment are critical elements.

It is well cognizant that gasoline power vehicles cause serious urban pollution while consuming a dwindling fossil fuel resource. A resolution to this problem is the deployment of electric and hybrid-electric vehicles. Consequently, IGBTs are found in hybrid vehicles and electric vehicles. Almost all manufacturers are using IGBTs now in electric and hybrid-electric vehicles made by them for delivery and control of power to the motors. This will keep on having a massive impact on the competency of our society to migrate away from gasoline consumption in the time to come.

The main components of an electric car system are an electric motor, a battery and an inverter. The inverter is utilized as an electric power transformation system for providing electrical power from the battery to the motor and for gathering energy produced by the motor in the battery. IGBTs are usually used as the main switching device in this electric power transformation system.

High-intensity discharge (HID) headlamps and super-accurate direct fuel-injection systems have become common in today’s cars and commercial vehicles such as buses and trucks. Their associated electrical drives and controls operate at voltages above 100 V. In HID-lamp ballast, IGBTs are typically used in an H-bridge configuration to manage the operation of the lamp throughout the ignition, warm-up, and run modes. And in direct fuel-injection applications, IGBTs control the high-voltage actuators for piezo elements inside the precision injectors. The injectors deliver fuel typically up to seven times a second and at such highly optimized distribution and density that a direct-injected diesel engine can now return fuel efficiency equal to that of a gasoline hybrid-electric vehicle.

After all we can say the available of IGBTs has been diametrical to the advancement of the hybrid vehicles and to the expansion of the charging substructure for the electric vehicles. IGBTs will carry on playing a significant part in the available of expense reducing technology for the whole hybrid and electric vehicle business.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Its customer includes Toyota, Nissan and ford and other companies in auto industry.

www.USComponent.com have a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

IGBT POWER TRANSMISSION SYSTEM

In a typical HVDC power transmission system, the power is transmitted at very high voltages (above 100-kV) in order to reduce the current on the cables. Large currents in cables require more copper which adds to the cost and weight. Since power semiconductor devices are unable to withstand such high voltages, it is necessary to connect many devices in series to satisfy the system requirements. In addition, for higher power levels, many devices may have to be connected in parallel as well. The series and parallel combination of power devices comprises an HVDC valve. The most common configuration for modern overhead HVDC transmission lines is bipolar because it provides two independent DC circuits each capable of operating at half capacity. Two basic converters topologies are used in modern HVDC transmission systems: conventional line-commutated, current-source converters (CSC) based up on thyristor-valves and self-commutated, voltage-sourced converters (VSC) based up on IGBT-valves. Each valve consists of a large number of series connected thyristors or IGBTs to sustain the desired DC voltage rating. In the case of current source converters with thyristor valves, a Graetz bridge configuration is used allowing six commutations or switching operations per period. Self-commutated, voltage-source converters using IGBTs are preferred because they allow independent rapid control of both active and reactive power. Reactive power can also be controlled at each end of the transmission line providing total flexibility in network design.

The self-commutated, voltage source converters can be constructed using IGBTs without the snubbers required for GTOs. The rate of rise of the current in the IGBT can be controlled by tailoring the gate drive voltage waveform without any ancillary components. This allows controlling the reverse recovery of the anti-parallel rectifiers without the snubbers. The reduced passive components in the IGBT-based VSC inverters reduce system cost.

IGBT with Photocopies and Printers

The fixing system for the toner in copy machines, laser printers, facsimile machines, data recorders, and scanners needs transfer of toner from the rolling drum to the printing paper with heat and pressure. Radiant heating with halogen lamps was used for this process in the past. However, nearly 90 percent of the printing energy is consumed by this operation. The efficiency can be improved by using the induction heating approach leading to reduction of the size of the printing devices.

The induction heating coil is installed concentrically inside the fixing roller. The high frequency inverter required to feed the inductive energy into the heating coil is built using IGBTs. The actual high efficiency of more than 94 percent of the series resonant ZCS-PDM high frequency inverter for IH roller in copy and printing machines has been observed for all the output AC power regulation ranges from 50 to 1200 W.

IGBT with Refrigeration Compressors

Refrigerators have become essential appliances in society for the preservation of food and beverages. The quality of life for people has been greatly enhanced with the availability of affordable refrigerators for homes. Most household refrigerators utilize the vapor compression cycle with a circulating refrigerant used to cool the refrigerator compartment. Household refrigerators originally used an on/off controlled, constant-speed, single-phase induction motor to drive the compressor. The poor efficiency of this approach made the refrigerator one of the highest power consumption appliances in the home. In order to improve the efficiency, modern refrigerators with the Energy star rating utilize variable-speed, three-phase induction motor drives. Current models that are Energy Star qualified use 50 percent less energy than the average models made in 1974.

The variable speed drive to the induction motor is provided using the six IGBTs in the inverter stage. The author’s state: “The total energy savings was about 40%. The system is very quiet and maintains a constant temperature within 0.1 degree Celsius which improves the quality and shelf life of food stored in the refrigerator.” Many companies have optimized IGBTs for use in refrigerator compressor drives due to the large market opportunity. Some companies have developed intelligent power modules, which combine the IGBTs, fly-back rectifiers, and the drive circuits into a single module. This provides a very compact and low cost motor drive option that can be easily adopted for the manufacturing of refrigerators.