SCALE-2 IGBT gate drivers from Power Integrations include
galvanic isolation, protection, and DC/DC conversion in a single module, and
are suitable for driving power mosfets and devices based on new materials such
as silicon carbide (SiC) operating at switching frequencies up to 500kHz. each
type is based on an asic chip-set that integrates the full functionality of a
dual-channel gate driver core in a primary-side chip logic-to-driver interface
and a secondary-side chip intelligent gate driver. They are available with
blocking voltage capabilities from 600V to 6,500V and from 1W to 20W per
channel drive. To ensure optimum performance for direct driving of external
n-type DMOS elements, the pre-driver stages of each of the modules incorporate
separate gate resistors for independent control of on/off functionality. There
are single- and dual-channel options, and applications are expected in
industrial, motor control, power transmission, traction, solar, wind and
automotive.
Online distributor of IGBTs, power transistor modules and other electronics components.
Showing posts with label IGBT Testing. Show all posts
Showing posts with label IGBT Testing. Show all posts
Monday, December 18, 2017
Monday, October 23, 2017
Estudio de mercadeo de los módulos bipolares en America
http://www.uscomponent.com/blog-preview.php?postid=55
El informe de investigación de mercado del transistor bipolar de la puerta aislada de los Estados Unidos (IGBT) da una visión general de las industrias del transistor bipolar de la puerta aislada de Estados Unidos (IGBT) encendido analizando varios segmentos dominantes de este mercado basado en los tipos de producto, aplicación, extremo-a-extremo industrias y su escenario. La distribución regional de las industrias de transistores bipolares aislados de Estados Unidos (IGBT) en todo el mundo se considera para este análisis de mercado, cuyo resultado se utiliza para estimar el desempeño del mercado internacional durante el período comprendido entre 2017 y el año anterior. El informe de investigación de mercado del transistor bipolar de la puerta aislada de los Estados Unidos (IGBT) arroja luz sobre las regiones más importantes: el oeste, suroeste, el medio atlántico, Nueva Inglaterra, el sur, el medio oeste El mercado estadounidense de transistores bipolares de puertas aisladas (IGBT) en el mundo, presenta información crítica y datos factuales sobre la industria de transistores bipolares aislados de Estados Unidos (IGBT), con un estudio estadístico general de este mercado sobre la base de controladores de mercado, limitaciones de mercado y sus perspectivas futuras. Las tendencias y oportunidades generalizadas también se tienen en cuenta en el estudio de mercado de transistores bipolares aislados de Estados Unidos (IGBT).
El informe de investigación de mercado del transistor bipolar de la puerta aislada de los Estados Unidos (IGBT) da una visión general de las industrias del transistor bipolar de la puerta aislada de Estados Unidos (IGBT) encendido analizando varios segmentos dominantes de este mercado basado en los tipos de producto, aplicación, extremo-a-extremo industrias y su escenario. La distribución regional de las industrias de transistores bipolares aislados de Estados Unidos (IGBT) en todo el mundo se considera para este análisis de mercado, cuyo resultado se utiliza para estimar el desempeño del mercado internacional durante el período comprendido entre 2017 y el año anterior. El informe de investigación de mercado del transistor bipolar de la puerta aislada de los Estados Unidos (IGBT) arroja luz sobre las regiones más importantes: el oeste, suroeste, el medio atlántico, Nueva Inglaterra, el sur, el medio oeste El mercado estadounidense de transistores bipolares de puertas aisladas (IGBT) en el mundo, presenta información crítica y datos factuales sobre la industria de transistores bipolares aislados de Estados Unidos (IGBT), con un estudio estadístico general de este mercado sobre la base de controladores de mercado, limitaciones de mercado y sus perspectivas futuras. Las tendencias y oportunidades generalizadas también se tienen en cuenta en el estudio de mercado de transistores bipolares aislados de Estados Unidos (IGBT).
Friday, October 13, 2017
Calentamiento excesivo de los IGBT y como evitarlos
Un
aumento excesivo o inesperado de la temperatura interna puede conducir a la
evaporación del agua ya la pérdida de refrigerantes en los sistemas críticos de
enfriamiento de la turbina, y eventualmente puede causar que la electrónica de
la turbina se sobrecaliente. Esto es una preocupación particular en las
máquinas con un sistema de refrigeración de lazo abierto y puede ocurrir
incluso con el uso de refrigerantes de alta calidad. Un sistema de bucle
abierto permite que el agua se evapore gradualmente desde el refrigerante de
agua-glicol en el circuito de transistor bipolar de puerta aislada (IGBT),
particularmente durante el tiempo cálido. (Los IGBT son un componente
electrónico utilizado típicamente en turbinas debido a sus capacidades de
conmutación rápidas y eficientes.) Un problema puede ocurrir cuando la
evaporación del agua disminuye el nivel del refrigerante y eleva la
concentración de la mezcla. Si el sistema se deja sin control y no se mantiene,
el desequilibrio de mezcla resultante inhibe las propiedades de enfriamiento
del fluido. Esto potencialmente compromete el IGBT. Huelga decir que una
pérdida de componentes IGBT debido al sobrecalentamiento puede resultar en
costosas pérdidas de hardware y un tiempo de inactividad significativo de la
turbina. Para evitar esto, los operadores de viento han "vendado" el
problema con una cadencia regular de monitoreo de refrigerante, reposición de
agua y reequilibrio de la mezcla de fluido refrigerante. Este enfoque puede
funcionar cuando se respeta diligentemente, pero es un costoso plan de
mantenimiento. Requiere tomar la turbina y el transformador fuera de línea, lo
que también significa tiempo de inactividad de la turbina y pérdida de ingresos
para el parque eólico.
Monday, March 20, 2017
IGBT Market Growth with Worldwide Industry Analysis to 2025
IGBT
Market Overview
Insulated Gate Bipolar Transistor formally known as IGBT is a power electronic
semiconductor device. This device have its major application in switches, phase
control and pulse modulation because of its high efficiency and fast switching.
Electric power is a basic requirement of modern society and absence of
electricity will create a huge loss and damage to human life as well as
society. IGBT helps in reducing the congestion in power supply which will
results into smooth electricity supply. IGBT have applications across various
industrial verticals because of high power efficiency, ability to work in low
power and high blocking voltage. IGBT is coming into focus because of its
ability to lower switching loss which reduces thermal stress on electric device
and results into extended device life and provides greater reliability. This
market is very attractive and projected to grow rapidly because of increasing
investment in Research and development of IGBT chips, module optimization for
reduction in power consumption, modified chip density and thermal resistivity.
These all features of IGBT are helping in strengthening the market position of
IGBT power electronic semiconductor device market.
IGBT Market Dynamics
Global IGBT market is currently in its growth
stage and shows significant potential across various industrial verticals.
Major factors which are driving the growth of global IGBT market are increasing
demand of replacement of old power infrastructures in developed regions such as
North America and Europe, increasing government incentives and growing need of
improved power cycling capacity and thermal capacity. Apart from these,
increasing demand of energy efficient electronic devices, IGBT’s ability to
improve efficiency of several electronics devices and also ability to play
important role in technological advancement of power electronic has further
fuelled this market growth. Factors which are restraining the growth of global
IGBT market are lack of awareness, high cost, high initial investment, lack of
stable characteristic of device in high temperature and economic slowdown.
However, this restraints are expected to minimize their impact on market for
long run. Global IGBT market have opportunity in future with deployment of
smart grid, which will helps in boosting global IGBT market.
IGBT Market Segmentation
Global IGBT market is segmented on the basis of applications, types and regions. On the basis of applications the global IGBT market is sub segmented into electric and hybrid electric vehicle (EV/HEV), industrial motor drives, traction, transportation, HVAC, renewable energy, UPS, series compensation and other applications. Among all this applications demand of EV/HEV is estimated to lead growth of global IGBT market during forecasted period. Rapid growth in green energy sector is also boosting the global IGBT market. On the basis of types the market is sub segmented into IGBT module and discrete IGBT.
Geographically, the IGBT market is sub segmented into seven global regions, North America, Latin America, Asia – Pacific (excluding Japan), Japan as a separate region, Western Europe, Eastern Europe and Middle East and Africa Region. Europe region is dominating the present global IGBT market in terms of market value with Germany and U.K leading the market growth. Asia – Pacific is estimated to be fastest growing region during forecasted period with technological development in china and Japan market is also expected to grow for IGBT. North America and other remaining regions are also projected to be very promising market for IGBT. Demand in Middle East region will further fuelled the global IGBT market growth.
IGBT Market Segmentation
Global IGBT market is segmented on the basis of applications, types and regions. On the basis of applications the global IGBT market is sub segmented into electric and hybrid electric vehicle (EV/HEV), industrial motor drives, traction, transportation, HVAC, renewable energy, UPS, series compensation and other applications. Among all this applications demand of EV/HEV is estimated to lead growth of global IGBT market during forecasted period. Rapid growth in green energy sector is also boosting the global IGBT market. On the basis of types the market is sub segmented into IGBT module and discrete IGBT.
Geographically, the IGBT market is sub segmented into seven global regions, North America, Latin America, Asia – Pacific (excluding Japan), Japan as a separate region, Western Europe, Eastern Europe and Middle East and Africa Region. Europe region is dominating the present global IGBT market in terms of market value with Germany and U.K leading the market growth. Asia – Pacific is estimated to be fastest growing region during forecasted period with technological development in china and Japan market is also expected to grow for IGBT. North America and other remaining regions are also projected to be very promising market for IGBT. Demand in Middle East region will further fuelled the global IGBT market growth.
IGBT Market Key Players
Key players of Global IGBT market includes Fujitsu Ltd., Infineon Technologies AG, STMicroelectronics N.V., NXP Semiconductors N.V., Vishay Intertechnology, Fairchild Semiconductor International, Inc., Toshiba Corporation, Inc., ROHM Co. Ltd., Fuji Electric Co. Ltd and Renesas Electronics Corporation, among others. These key players are following trend of large scale collaborations and partnership. These strategies will be beneficial for them in expanding their global footprints and increasing global market share.
Future Market Insights (FMI) is a leading market intelligence and
consulting firm. We deliver syndicated research reports, custom research
reports and consulting services, which are personalized in nature. FMI delivers
a complete packaged solution, which combines current market intelligence,
statistical anecdotes, technology inputs, valuable growth insights, an aerial
view of the competitive framework, and future market trends.
Key players of Global IGBT market includes Fujitsu Ltd., Infineon Technologies AG, STMicroelectronics N.V., NXP Semiconductors N.V., Vishay Intertechnology, Fairchild Semiconductor International, Inc., Toshiba Corporation, Inc., ROHM Co. Ltd., Fuji Electric Co. Ltd and Renesas Electronics Corporation, among others. These key players are following trend of large scale collaborations and partnership. These strategies will be beneficial for them in expanding their global footprints and increasing global market share.
Thursday, March 16, 2017
IGBT Module Market 2017-2021 - Size, Shares & Trends Analysis by Regions and Growth Forecasts
IGBT Module Market research report is a professional and in-depth study on
the current state of this market. Various definitions and classification of the
industry, applications of the industry and chain structure are given. Present
day status of the IGBT Module market in key regions is stated and industry
policies and news are analysed.
In depth analysis of an industry is a crucial
thing for various stakeholders like investors, CEOs, traders, suppliers and
others. The IGBT Module industry research
report is a resource, which provides technical and financial details of the
industry.
Next part of the IGBT
Module market analysis report speaks about the manufacturing process. The
process is analysed thoroughly with respect to three points, viz. raw material
and equipment suppliers, various manufacturing associated costs (material cost,
labour cost, etc.) and the actual process.
Top Key Players of IGBT Module Market:
·
Infineon
·
Vishay
·
Semikron
·
Fuji
·
ABB
·
Renesas
·
Fairchild
·
Littelfuse
·
STMicroelectronics
·
Toshiba
Split by applications, this report focuses on sales, market share and
growth rate of IGBT Module in each application, can be divided into:
·
Electric Vehicle
·
Windmill converter
·
Medical
·
Telecom Power Supply
·
Household appliances
·
Others
After the basic
information, the report sheds light on the production. Production plants, their
capacities, production and revenue are studied. The IGBT Module market
consumption for major regions is given. Also, the IGBT Module industry growth
in various regions and R&D status are also covered such as:
·
United States
·
China
·
Europe
·
Japan
Split by product type, with production, revenue, price, market share and
growth rate of each type, can be divided into:
·
NF series
·
NFH series
·
Others
Further
in the report, the IGBT Module industry is examined for price, cost and gross
value. These three points are analysed for types, companies and regions. In
continuation with this data sale price is for various types, applications and
region is also included.
To
provide information on competitive landscape, this report includes detailed
profiles of IGBT Module market key players. For each player, product details,
capacity, price, cost, gross and revenue numbers are given. Their contact
information is provided for better understanding.
Tuesday, March 14, 2017
IGBT Chip Market 2016 - Production, Sales, Supply, Demand, Analysis & Forecast to 2021
IGBT Chip Market report focuses on the major drivers and
restraints for the key players. It also provides granular analysis of the
market share, segmentation, revenue forecasts and geographic regions of the
market. The IGBT Chip Market research report is a professional and
in-depth study on the current state of the IGBT Chip Industry.
The
IGBT Chip market overview is given in the first three chapters of this report.
Definitions and classifications of the market are explained in this part and
industry chain structure is explained. Various policies and news are also
included. Various costs involved in the production of IGBT Chip are discussed
further. This includes labour cost, depreciation cost, raw material cost and
other costs.
Along
with this, the production process is analysed with respect to various aspects
like, manufacturing plant distribution, capacity, commercial production,
R&D status, raw material source and technology source. This provides the
basic information about the IGBT Chip industry.
Further in the IGBT Chip Sales market research report, following points are
included along with in-depth study of each point:
·
Production Analysis-
Production of the IGBT Chip is analysed with respect to different regions,
types and applications. Here, price analysis of various IGBT Chip market key
players is also covered.
·
Sales and Revenue
Analysis- Both, sales and revenue are studied for the different regions of the
global IGBT Chip market. another major aspect, price, which plays important
part in the revenue generation is also assessed in this section for the various
regions.
·
Supply and
Consumption- In continuation with sales, this section studies supply and
consumption for the IGBT Chip market. This part also sheds light on the gap
between supple and consumption. Import and export figures are also given in
this part.
·
Competitors- In this
section, various IGBT Chip industry leading players are studied with respect to
their company profile, product portfolio, capacity, price, cost and revenue.
This includes following firms:
·
Infineon
·
Fairchild
Semiconductor
·
ON Semiconductor
·
STMicroelectronics
·
Renesas Electronics
Other analyses- Apart from the aforementioned information, trade
and distribution analysis for the IGBT Chip market, contact information of
major manufacturers, suppliers and key consumers is also given. Also, SWOT analysis
for new projects and feasibility analysis for new investment are included.
Regions covered in the report:
·
North America
·
China
·
Europe
·
Japan
·
India
·
Southeast Asia
With the help of
supply and consumption data, gap between these two is also explained.
Both established and new players in the IGBT Chip industry can use this
report for complete understanding of the market.
Tuesday, March 7, 2017
IGBT Chip Market Research Report Now Available at Research Corridor
Research
Corridor has published a new research study titled “IGBT Chip Market – Growth,Share, Opportunities, Competitive Analysis and Forecast, 2015 – 2022”. The IGBT
Chip market report studies current as well as future aspects of the IGBT Chip
Market based upon factors such as market dynamics, key ongoing trends and
segmentation analysis. Apart from the above elements, the IGBT Chip Market
research report provides a 360-degree view of the IGBT Chip industry with
geographic segmentation, statistical forecast and the competitive landscape.
Geographically,
the IGBT Chip Market report comprises dedicated sections centering on the
regional market revenue and trends. The IGBT Chip market has been segmented on
the basis of geographic regions into North America, Europe, Asia Pacific and
Rest of the World (RoW). The RoW segment consists Latin America and the Middle
East & Africa. The Igbt Chip market has been extensively analyzed on the
basis of various regional factors such as demographics, gross domestic product
(GDP), inflation rate, acceptance and others. IGBT Chip Market estimates have
also been provided for the historical years 2013 & 2014 along with forecast
for the period from 2015 – 2022.
Monday, February 6, 2017
IGBT Based Power Module Market Research Report Now Available at Research Corridor
Research
Corridor has published a new research study titled “IGBT Based Power Module Market – Growth, Share, Opportunities, Competitive Analysis and Forecast, 2015
– 2022”. The IGBT Based Power Module market report studies current as well as
future aspects of the IGBT Based Power Module Market based upon factors such as
market dynamics, key ongoing trends and segmentation analysis. Apart from the
above elements, the IGBT Based Power Module Market research report provides a
360-degree view of the IGBT Based Power Module industry with geographic
segmentation, statistical forecast and the competitive landscape.
Geographically,
the IGBT Based Power Module Market report comprises dedicated sections
centering on the regional market revenue and trends. The IGBT Based Power
Module market has been segmented on the basis of geographic regions into North
America, Europe, Asia Pacific and Rest of the World (RoW). The RoW segment
consists Latin America and the Middle East & Africa. The IGBT Based Power
Module market has been extensively analyzed on the basis of various regional factors
such as demographics, gross domestic product (GDP), inflation rate, acceptance
and others. IGBT Based Power Module Market estimates have also been provided
for the historical years 2013 & 2014 along with forecast for the period
from 2015 – 2022.
Monday, January 23, 2017
IGBT and Public Transit
Suburban railway systems, one of major public
transit tools, are trusted by a huge number of mass people from all over the
world for their regular travel to and from work. Beside the urban transit
system, electric trains have turned into a common way for travelling within
metropolises in Europe and Asia. Very fast bullet trains in China, Japan and
Europe enable journey by massive numbers of people by not consuming fossil
fuel. Petrol/octane fueled cars and gasoline powered aircraft liquidates fossil
fuel which is very bad for our environment. IGBT develops the motor drive
technology greatly by ejecting snubber circuits and enhancing the operating
frequency of the inverter circuit implemented to provide power to the motors.
Train traction has become one of the utmost
taxing applications for power electronic modules due to the tough weather
influences like moisture, dust and comprehensive temperature span. Power
electronic gets into trouble from the trembles within the trains besides the
electric and thermal load. The high number of acceleration and deceleration
rounding operation causes extreme demands concerning power and thermal-cycling
ability.
High potent IGBT modules are applied to meet
the special needs of this particular infliction. These modules are specifically
designed to be used in transportation and analogous applications. For achieving
dependable, secure and cost-effective operation, IGBT devices in voltage
classes 3.3KV, 4.5KV and 6.5KV with improved mechanized and thermic features
are placed in trains around the world.
High-speed switching IGBTs are used in main
circuits by modern train traction systems. This high-speed switching lessens
electromagnetic noise which is generated by the primary motor and enhances the
efficiency of energy conversion. Traction system for trains employ an induction
motor as the main driving motor and a VVVF inverter as a control unit, and they
have improved remarkably as AC equipment especially because the main circuit
semiconductor elements have rapidly improved.
Today, more than 20 years after the initiation
of application, new equipment is 100% designed for AC driving. Since the
history of the shift to AC has largely depended on the technological
advancement of main circuit semiconductors, Mitsubishi Electric Corporation is
in an advantageous position in the industry, with the development of main
circuit semiconductors, the manufacturing of chips, and the assembly tests of
conductors all performed successively within the company.
Recently main circuit semiconductors usually
employ a two-level main circuit configuration, consisting of IGBTs that can
perform driving control with low power consumption, and an intelligent power
module (IPM) that is equipped with a driver and protection functions. The main
circuit semiconductors available today have much more delicate mechanisms which
are becoming closer to ideal converters.
USComponent.com had been selling IGBT power
transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General
Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains
LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year
Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.
USComponent.com have a Quality Control Team like no other. This means
that we know how to work hard in order to ensure to make sure that the quality
of all of the parts we’re selling is high. Because we only sell new and
original electronic parts, we provide our customers with a 30-day warranty. And
because we have connections with IGBT power transistor modules manufacturers,
OEMs and distributors, we’re able to pass any savings on to our customers,
giving them a lower price while still providing them with the quality products
they deserve. Our inventory is carefully managed and held to the highest
standards, and stored in a controlled environment warehousing facility.
Monday, January 9, 2017
IGBT with Photocopies and Printers
The
fixing system for the toner in copy machines, laser printers, facsimile
machines, data recorders, and scanners needs transfer of toner from the rolling
drum to the printing paper with heat and pressure. Radiant heating with halogen
lamps was used for this process in the past. However, nearly 90 percent of the
printing energy is consumed by this operation. The efficiency can be improved
by using the induction heating approach leading to reduction of the size of the
printing devices.
The
induction heating coil is installed concentrically inside the fixing roller.
The high frequency inverter required to feed the inductive energy into the
heating coil is built using IGBTs. The actual high efficiency of more than 94
percent of the series resonant ZCS-PDM high frequency inverter for IH roller in
copy and printing machines has been observed for all the output AC power
regulation ranges from 50 to 1200 W.
Friday, January 6, 2017
IGBT with Refrigeration Compressors
Refrigerators have
become essential appliances in society for the preservation of food and
beverages. The quality of life for people has been greatly enhanced with the
availability of affordable refrigerators for homes. Most household
refrigerators utilize the vapor compression cycle with a circulating
refrigerant used to cool the refrigerator compartment. Household refrigerators
originally used an on/off controlled, constant-speed, single-phase induction
motor to drive the compressor. The poor efficiency of this approach made the
refrigerator one of the highest power consumption appliances in the home. In
order to improve the efficiency, modern refrigerators with the Energy star
rating utilize variable-speed, three-phase induction motor drives. Current
models that are Energy Star qualified use 50 percent less energy than the
average models made in 1974.
Thursday, December 22, 2016
IGBT with Oil Extraction
As the petroleum industry matures, it must locate and extract oil
from deeper and deeper reservoirs under the surface of the earth. The
extraction of oil from deep underground, using oil wells is difficult due to
high viscosity and inclusion of asphalt. The viscosity can be reduced by either
irrigating with hot water, addition of chemicals, or by electric heating of the
pipelines. Electric heating technology is widely used by the oil industry
because of its low cost. A single phase AC source at 40-100 Hz is supplied to
the well wall to provide resistive heating. A basic set up is needed for
heating the oil pipe. The heating loop consists of the oil pipe and heater at
the bottom of the well. When current flows through the loop, it not only
increases the temperature at the bottom of the well but along the pipe due to
the resistance of its walls.
For an
example, we can say that a 50-Hz, 380-V, three-phase, AC power is converted to
a DC bus by the rectifier stage and then inverted using the IGBTs to variable
frequency ranging from 40-100 Hz. The heating efficiency is increased by 50
percent with this approach. The set has advantages of small volume and light
weight because of using IGBT in the inverter system.
Wednesday, December 14, 2016
IGBT WITH INDUCTION ROW
Rice is the first & foremost food for billions of people
around the world, especially in Asian countries such as China, India, and
Japan, with mass populations. According to Asian Rice Foundation, “Rice is
arguably the world’s most important food. It is the second most widely
cultivated cereal in the world, after wheat, and is a staple food of over half
the world’s population. Rice can be cooked in a variety of ways, including
boiling, baking, roasting, frying, and pressure-cooking. Cooking rice in an
automatic rice cooker is becoming very popular, as it ensures consistent
results and cooking instruction is much simpler to follow”.
Many Asian companies have
developed rice cookers based up on the induction heating principle. The
induction heating can be accomplished by using an induction cooking plate or
preferably by using an induction rice cooker. Two types of circuit topologies
have been explored for the induction rice cooker. First one is the half-bridge
series resonant converter and another is the quasi-resonant converter. The
series resonant converter has the advantages of stable switching, low cost, and
streamline design. The quasi-resonant converter has the advantage of a smaller
design with reduced heat sink. The quasi-resonant converter is more widely
used. Due to the large market for these appliances, some semiconductor
companies have developed IGBT products optimized for this market for the
quasi-resonant converter topology. IGBTs feature a robust and cost effective
Field Stop (FS) trench construction, and provide superior performance in
demanding switching applications, offering both low on-state voltage and
minimal switching loss. IGBTs are well suited for this type of resonant or soft
switching applications.
Thursday, December 8, 2016
IGBT WITH VACUUM CLEANERS
A vacuum cleaner is an appliance that uses an air pump to create a
partial vacuum to suck up dust and dirt from floors, and other surfaces. The
dirt is collected by a dust-bag for future disposal. Hubert Cecil Booth
invented the motorized vacuum cleaner in 1901. Since then, their use has
proliferated and vacuum cleaners are now very commonly used in homes on a
regular basis to maintain a healthy living environment. Manufacturers of vacuum
cleaners include Eureca, Hoover, Bissell, and Dyson. In the past, universal
motors were mostly used for vacuum cleaners due to high operating speed with
low cost. However, these motors use a mechanical brush which wears out at high
speeds limiting the performance.
Modern vacuum cleaners with higher output power (suction) are
designed using switched reluctance motors. The power circuits used for
operation of the switched reluctance motor in vacuum cleaners. These circuits
utilize IGBTs to overcome the difficult start-up problem for switched
reluctance motors and for maintaining a high operating speed. The author’s
state: “Its lifetime is extended 4 times than that of conventional motor and
its suction power is increased 20% at the same volume of conventional universal
motor”.
Monday, December 5, 2016
IGBT FOR CAMERA WITH FLASH
Most consumers have already migrated from taking photographs using
film to a digital medium. The Digital Still Camera (DSC) has now become
common-place. All digital cameras incorporate a flash with many features such
as red eye reduction. These capabilities require a digitally programmable
control with very compact circuitry to drive the Xenon flash. Some cell-phones
now incorporate a flash to improve up on the quality of photographs taken under
low light conditions. In addition, electronic control of lighting is used by
professional photographers with strobe flashes. Lighting rumors states on their
website: “Paul C. Buff’s Einstein monolights have been a big hit in the
photographic lighting market, much lauded for their insulated-gate bipolartransistor (IGBT) circuitry and digital remote control.”
A Xenon bulb is used to create a short powerful burst of light
with illumination characteristics close to that of sunlight. The Xenon bulb
requires a high operating voltage of 320-V derived from a low 3 to 6 volt battery
source. This is achieved by using a DC/DC converter with step-up transformer as
shown in the figure. The high voltage is stored in a capacitor and discharged
into the Xenon blub by turning on the IGBT. The IGBTs must have not only a high
sustaining voltage capability but must be capable of operating with a drive
voltage of only 4 volts. The footprint of the IGBT must also be reduced with
innovative chip design and packaging because it must be capable of handling
150-A for a short duration. A similar circuit is used for the flash in a
cell-phone but there is even greater pressure for IGBT manufacturers to reduce
the foot-print and gate drive voltage. Some companies have described their
technology roadmap for shrinking the footprint for the IGBT devices used for
the flash application.
Tuesday, November 29, 2016
IGBT in the Energy Generation Sector of Fossil Fuels
Among the legacy power generation technologies, gas turbine power plants are being deployed due to the discovery of large amounts of natural gas in the United States and Australia. A permanent magnet generator is run directly from a gas turbine without a gear-box for enhanced reliability. The generator terminal voltage is at a nominal 600-Hz which must be rectified and then converted to a well regulated 50 or 60 Hz AC power for transmission to points of use. IGBT power switches are now being used for this application because of the availability of high voltage, high-current modules from many manufacturers. A 1.6 Giga-Watt gas power plant can be designed using 6 modular 300 kVA three phase voltage source IGBT stacks with 6 IGBTs in a typical bridge configuration. The design allows full control of the AC current and power factor on the grid-side. The IGBT stacks are paralleled to satisfy the 1.6 Giga-Watt power requirements. The availability of intelligent IGBT power modules with gate drivers and protection circuits has accelerated the adoption of this technology.
Wednesday, November 9, 2016
IGBT Market Will Reach $11 Billion by 2022
Asia-Pacific dominates
the global market, accounting for more than 50% revenue share of the overall
IGBT market, followed by Europe.
High power IGBT segment
is projected to maintain its lead in the overall IGBT market, as these modules
are used for power transmission in high voltages with minimum current loss.
Moreover, Asia-Pacific is the major revenue contributor of this market due to
increasing demand for electric vehicles utilizing IGBT for power transaction.
China, India, and Japan are the major consumers of IGBT in Asia-Pacific.
Electric vehicle segment
is expected to exhibit the fastest growth during the forecast period, owing to
increasing applications of IGBT in e-bikes and e-cars. Because High-Voltage
IGBTs are integrated automotive applications, as they enable power management
and reduce power leakage, Telsa has been using IGBT made by International
Rectifier in its popular Model S.
IGBT market will
continute growing in the near future.
Thursday, October 6, 2016
CM1200HA-34H and It’s Use in Plasma Cutting - SPANISH
Plasma cutting sector
has been developed significantly in recent years. In the initial stages, CNC
plasma cutting machines used to utilize MOSFETs in their inverters as
transistor. Usage of IGBTs is now increased noticeably in this field. With
assimilated MOSFETs, if one of the transistors activates untimely it can cause
collapse of one quarter of the inverter. A later discovery, IGBTs, is not as
subject to this failure mode. IGBTs can be generally found in high current
machines where it is not possible to parallel sufficient MOSFET transistors.
El mercado de los
cortadores de plasma se ha desarrollado significativamente en los años
recientes, en su etapa mas inicial las maquinas que empleaban cortadores de
plasma usaban un MOSFET en sus invertores como transitores, la usanza de los
IGBTS es ahora lo mas común y aparte, es lo que ha incrementado, si uno de los
transitores se activa de manera tardia, puede causar un colapso de un
cuarto del invertor, esto es un problema que ocurria con el Mosfet, pero con el
IGBT no es un sujeto de esta clase de fallas, los IGBT pueden ser usados
y encontrados generalmente en maquinas que requieren una corriente muy alta,
donde no es posible utilizar un MOSFET por sus incapacidades, como la antes
mencionada.
Mitsubishi Electric
Corp. of Japan has manufactured CM1200HA-34H for using in inverters and high
speed switching applications. Its great performance will make your plasma
cutting experience mind-blowing.
Mitsubishi Electric
Corp, el gigante japones, ha manufacturado el CM1200HA-34H para su uso en
invertores de alta velocidad cambiaria, que a su vez es perfecto para los
cortadores de plasma, algo realmente impresionante
Descripción:
MITSUBISHI modulo de
poder IGBT
Especificaciones:
100 Amp, 600 Volt,
Transitor de poder
Aplicaciones:
Invertores DC motor
control; Switching power supplies; AC motor control
Thursday, September 1, 2016
LASTEST DUAL HIGH VOLTAGE IGBT MODULES TARGETS THE HEAVY INDUSTRIES
Mitsubishi developed the X
series of dual IGBT modules, samples of a 3.3. kv ( LV100 with 6KV
isolation taking up to a 450A) will be available for shipping from March
next year (2017), then 1.7 kb, 3.3 kv, 4.5 and 6.5kv versions in that order,
they will be all available from 2019 onwards (with a 10kv isolation).
This device will satisfy demand
for efficient and high power density semiconductors, they will be contributing
to higher power outputs and efficiency by adopting the lastest diodes for IGBTs
and RFCs, standardized 100x140x40 package dimensions will allow the manufacturing
industry to simplify the design and secure multiple sources for inverters.
Tuesday, August 23, 2016
IGBT in High Speed Drilling and Milling
When we talk about factories,
places, vehicles, we sometimes don´t know that these manufacturing facilities
are equipped with milling and drilling machines. In order to increase their
performance it is necessary for them to employ high speed cutting technology,
this makes them better in every way possible in the cutting process,
Milling spindles with extremely high rotational speed and great stiffness are
required for high perfomance milling operations.
An active magnetic bearing must
be used to meet these requirements for the previous milling needs said. The
amplifier of the basic control circuit for an active magnetic bearing must
provide sufficiently high voltage drop across the resistance of the magnet coil
in order to get major stiffness and a large duration while in the process
of the machine.
To improve reliability and
reduce costs, IGBT devices are used in the newly developed switching amplifier,
this IGBT have been tested in a practical system of a high speed milling
spindle ( 35 KW/40,000rpm) consisting of an active magnetic bearing for
five axes.
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