Infineon's S5 IGBT is proficient and strong

Infineon Technologies has discharged the S5 IGBT range, taking into account the ultra-slim wafer TRENCHSTOP 5 IGBT. This reach has been created particularly for AC/DC vitality transformation in mechanical applications changing up to 40 kHz, regularly to be found in Photovoltaic Inverters or Uninterruptible Power Supplies.

The S5 gadget is said to highlight productivity levels up to and past 98% giving high vitality yields for sun powered cell establishments and lessened framework costs. It is additionally guaranteed to convey expanded levels of heartiness and quality to help planners in accomplishing up to 20 years of operational lifetime.

The Discrete IGBT highlights enhanced changing conduct to diminish circuit intricacy and general framework costs by killing the need of capacitors and Zener diodes. Likewise, expanded vigor and quality levels are said to be improved further with a 25% expansion in surge current taking care of capacity. The gadget has an ordinary immersion voltage VCE (sat) of 1.60V at 175°C, which means high proficiency can be kept up amid high temperature operations.

Creator

Tom Austin-Morgan

Infineon eleva a SIC a una nueva era para el mejoramiento de la tecnología

Aparatos que llevan a la tecnología a un nuevo nivel, usando SIC MOSFETS  permite conversión para operar  al triple o más, el cambio de la   frecuencia  conducen a beneficios, algo que era imposible hasta ahora, Dr. Helmut Gassel, presidente de Infineon´s Industrial Power Control dijo “que estos aparatos  lograron un nuevo nivel que jamás antes había sido posible llegar, son más pequeños y contienen un ligero sistema  para menos transportación y más fácil instalación”.

Así como llegamos a una nueva era llena de nuevas posibilidades que la tecnología siga cambiando, los SIC MOSFETS son una prueba de ello, optimizado para combinar fiabilidad con rendimiento. Operan en una magnitud más baja que 1200 V, esto reduce las perdidas y también apoyan al mejoramiento del sistema en aplicaciones como  Fotovoltaico inversores y sistemas de carga/almacenamiento entre otros, esto también extiende el apoyo  a drivers industriales y a la durabilidad de la vida de los aparatos.

Los MOSFITS son compatibles con +15 V/-5V voltage usados para conducir IGBTs, su estructura combina rango de voltaje de umbral de referencia (V th) de  4V con un corto circuito robusto que es requerido por  la aplicación y totalmente controlable características  dv/dt.  Esto inicialmente apoya a mejoras del sistema en aplicaciones  como Fotovoltaico inversores y sistemas de carga/almacenamiento entre otros, esto también extiende el apoyo  a drivers industriales también se extiende a controladores industrials.

La última evolución  de la familia Infineons de SIC Technology  incluye schottky diodes, 1200 V J- FET aparatos y una gama de soluciones hibridas  que integra una mejor carga de la batería, ahorro de energía y la integración de un cuerpo robusto de conmutación diodo funcionamiento.

Para Infineon  esto es la culminación de años de experiencia y mejoras, realmente algo para tener a la vista.

IPOSIM - The Infineon Power Simulation Program for Loss and Thermal Calculation of Infineon Power Modules and Disk Devices

Infineon owns a  power simulation program that will support you while selecting the right Infineon bipolar modules or disk devices for your rectifier such as (B2, B6, M3.2 and M69 or AC switch (W1C and W3C) applications as well as suited IGBT modules for your inverter needs these could be: single, 3 phase and 2 levels , or even DC converter applications.

This program performs a calculation of switching and conductions losses for all components, keeping an account of the conduction and switching losses as well as thermal ratings, different control algorithms can be applied if it requires to, thermal conditions can be adapted by user defined or predefined heat sinks.

The results will be shown in tabular and graphic representation  and can be saved for later revision or printed as a pdf file.

IPOSIM is just as easy  to use as it sounds  and enables the user to choose the correct Infineon device for their very own need.

This makes Infineon a pioneer in improvements in the IGBT area.

Infineon Raises SIC Mosfet to a Whole New Era of Improved Technology

Devices that raise the technology to a  whole new level, using SIC MOSFETS allows conversion to operate at triple or more the switching frequency leading to benefits, something  that was impossible until now, Dr Helmut Gassel, president of infineon`s Industrial Power control said these devices reached a  whole new level which has never before been possible, they are smaller and contain a lighter system for less transportation and easier installation.

As we arrive to a new era filled with new possibilities technology keeps changing, the SiC MOSFETs is a prove of this, it has been optimized to combine reliability with performance. They operate in a magnitude lower than 1200 V, this reduces the dynamic losses and also supports system improvements in applications such as photovoltaic inverters and charger/storage systems among others, this also extend the support to industrial drives and the durable life of the devices.

These  MOSFETS are fully compatible  with +15 V/-5V voltage typically used to drive IGBTs, their structure combines a benchmark  threshold voltage rating (V th) of  4V with a  short circuit robustness which is required by the target applications  and fully controllable dv/dt characteristics, This initially supports system improvements in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) or charger/storage systems, while later configurations will also extend support to industrial drives.

The latest evolution of Infineon`s comprehensive family of cool SiC technologies includes schottky diodes , 1200 V J- FET devices and a  range of hybrid solution that integrates a better battery charging, energy storage and the integration of a  commutation  robust  body diode operating with nearly zero  reverse recovery losses.

For Infineon this is the culmination of years  of experience and improvements, truly something to keep an eye on.

High Power FZ1600R17KF6C-B2 IGBT Module from Infineon Technology

Visit http://www.uscomponent.com/buy/eupec-infineon/fz1600r17kf6c-b2/ and get your own FZ1600R17KF6C-B2 and let the wind turbines of your area power up to the next level.

FZ1600R17KF6C-B2 is the best solution if you want your communitys wind turbines to power up beyond the limits. Even with offshore wind turbines, this high power IGBT module will never let you down. With 2600A or 1700V, FZ1600R17KF6C-B2 can guarantee not only high efficiency but reliability as well. It can maintain its optimum performance for a long period of time!

Manufactured by Infineon Technology, FZ1600R17KF6C-B2 has powerful features that you cant see on ordinary semiconductors. It’s equipped with an AlSiC base plate plus an enlarged diode to intensify its power and makes it suitable for regenerative operation. Its strong module construction is also designed to avoid getting damaged easily.

Infineon FZ1600R17KF6C-B2 is also highly advantageous to other applications like railway tractions, CAVs and even for standardized housing.

Eupec Infineon Technologies AG - FZ3600R12KE3 IGBT Transistor Module Stock

Click http://www.USComponent.com/buy/eupec-infineon/fz3600r12ke3/ to get the FZ3600R12KE3 Infineon Technologies AG IGBT transistor module stock!

If you are looking for a lightweight IGBT transistor module which can provide as much as 3600A/1200V for your uninterruptible power supply (UPS), search no more, as Eupec Infineon FZ3600R12KE3 is here to give your UPS power supply a boost.

At only 12lbs., FZ3600R12KE3 amazingly has high power density due to its strong module construction. Because of this remarkable advantage, this IGBT transistor module is not only useful to UPS but also known to be beneficial to other target applications as well, such as drives, wind converters, and solar converters. Environmentally safe and hazard-free, FZ3600R12KE3 manufactured by Eupec Infineon Technologies AG and it’ is UL recognized.

Ordinary UPS only provides uninterrupted power for a short period of time. To improve and increase the power and brevity of your UPS, you need FZ3600R12KE3 Infineon IGBT Transistor Module Stock! Visit USComponent.com and get yours now!

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