Wide Input Voltage Automotive Buck Regulators

The new Allegro Microsystems adjustable high-frecuency DC-DC step-down sitching regulators with an integrated high-side power MOSFET are ideal for power supply requirements of the lastest systems, The Allegro series A8568   provides up to 3.5 A output current while the A8587 has output current up to 2.0 A, both devices are automotive,  AEC Q100 qualified and incorporated with current-mode control for fast transient response.

The devices counts with a  wide input rage of 3.8 to 36V which makes both of them suitable for a  wide range of step-down applications including those in an automotive input environment. Battery-driven “keep-alive” applications benefits from the lowest to the highest range and operational current, both devices are incorporated with current mode control for fas transient control, are easy to manage and robustly handle.

These new regulators maintain high-efficiency across a wide range of loads in the PWM mode and incorporate pulse frequency modulation (PFM) as the load reduces. This in turn reduces switching and gate driver losses at light loads. Both the A8586 and A8587 incorporate frequency foldback to help prevent inductor current runaway during startup and provide enhanced dropout performance.

These new generation of regulators maintain high-efficency across a  wide range of loads in the pwm and incorporate pulse frecuency modulation (PFM) as the load reduces., this reduces the switching and gate driver losses at light loads.

Robust protection features makes them extensively safety for their uses, the current limit at the pulse by pulse and the hiccup mode-short-circuit protection makes them a great choice.

Negative Power-On-Reset (NPOR) function to indicate in-regulation and out-of-regulation status.

Insulated Gate Bipolar Transistor Modules

IGBT is the short term for Insulated Gate Bipolar Transistor, that is a three-terminal semiconductor device with a  huge bipolar current carrying capability, many designers think that IGBT has a CMOS i/p ad bipolar o/p characteristic voltage controlled bipolar device, that makes this device designed to make use of the benefits of both BJT and MOSFET Devices in the form of monolithic it combines the best qualities of both to obtain the better device in the market.

The IGBT Module can bes used in power electronics, particularly in PWM(Pulse Width Modulated), UPS (Un interruptible Power Supplies), SMPS (Switched-Mode Power Supplies), and other power circuits. It increases the efficiency, dynamic performance and reduces the level of the audible noise. It is similarly fitted in the of resonant mode converter circuits. Optimized IGBT is accessible for both low switching loss and low conduction loss.

IGBT in High Speed Drilling and Milling

When we talk about factories, places, vehicles, we sometimes don´t know that these manufacturing facilities are equipped with milling and drilling machines. In order to increase their performance it is necessary for them to employ high speed cutting technology, this makes them better  in every way possible in the cutting process, Milling spindles with extremely high rotational speed and great stiffness are required for high perfomance milling operations.

An active magnetic bearing must be used to meet these requirements for the previous milling needs said. The amplifier of the basic control circuit for an active magnetic bearing must provide sufficiently high voltage drop across the resistance of the magnet coil in order to get major stiffness and a  large duration while in the process of the machine.

To improve reliability and reduce costs, IGBT devices are used in the newly developed switching amplifier, this IGBT have been tested in a practical system of a  high speed milling spindle ( 35 KW/40,000rpm) consisting of an active magnetic bearing  for five axes.

Renesas Cuts Immersion Voltage in IGBTs

Renesas has shaved 200mV from the immersion voltage of its 650V IGBTs to expand power proficiency.

Said to be because of "ultrathin wafer innovation", run of the mill immersion voltage has dropped from 1.8V to 1.6V in 650V gadgets, and from 2.1V to 1.8V in 1,250V forms.

"There is an exchange off between immersion voltage and the high short out resilience," said the firm. "It has been hard to accomplish low misfortune alongside a high short out resilience."

In any case, it appears to have done it, with short out resilience up to 10µs, contrasted and 8µs in its practically identical prior items. "This guarantees dependability and strong execution in frameworks, for example, power conditioners for sun oriented force inverters," said Renesas.

For quicker exchanging, reverse exchange capacitance is roughly 10% down "by advancing the surface structure of the gadget".

The 13 IGBTs can be found in the RJH/RJP65S arrangement for 650V and RJP1CS arrangement for 1,250V.

Shipping organizations are wafer/chip and TO-247A bundle for the RJH65S arrangement.

Tests begin delivering this month, with large scale manufacturing planned to start in September 2012, scaling to 500,000 units/month by April one year from now.

Renesas likewise plans to discharge a line of units comprising of the new IGBTs with RL78 and RX groups of microcontrollers for engine and inverter control.

Mitsubishi makes all-SiC 3.3kV 1.5kA footing inverter

Scientists at Mitsubishi have made custom mosfets for an all silicon carbide 3.3kV 1.5kA dc to three-stage footing inverter for railroad trains, asserting the inverter to be a world first.

The organization has as of now worked a mixture outline with silicon IGBTs and 1.7kV SiC Schottkys on an underground prepare, which showed 38.6% force investment funds contrasted and the ordinary framework.

Custom 3.3kV 1.5kA SiC mosfets and Schottky diodes were made for the all-SiC extend, and incorporated with modules with one transistor and one diode. On the whole, the inverter has 16 modules. Exchanging misfortunes in the inverter are guaranteed to be 55% superior to the silicon identical.

To get conduction misfortunes as low as proportional silicon IGBTs, mosfet cell structure was advanced, and the JFET area ('JD' in the chart) of the mosfets was n-doped by high vitality nitrogen implantation to lessened JFET on-resistance at high temperature.

For stable torrential slide breakdown (~4kV), a field-constraining ring structure was produced for edge end in both gadgets and devices.

Additionally for strength, the converse diode inalienable in the mosfet structure was upgraded for a long working life conveying current nearby the Schottky, instead of waiting be shorted by the Schottky.

Last mosfet dynamic territory is 0.83cm2, and the Schottkys every spread 0.74cm2.

Report '3.3kV/1500A force modules for the world's first all-SiC footing inverter' in the Japanese Journal of Applied Physics depicts the SiC semiconductors.

The examination is likewise highlighted in the September 2015 issue of the JSAP Bulletin, from which the charts are taken.

Mitsubishi Electric to Discharge Institutionalized HVIGBT Module X-Series

Mitsubishi Electric Corporation declared today that it has built up a cutting edge power module called X-Series New Dual HVIGBT module for footing and electric force applications in overwhelming commercial ventures. The new module highlights higher force thickness and proficiency for inverters and in addition an institutionalized bundle that considers an adaptable configuration of inverter frameworks.

Tests of the 3.3kV (LV100) variant of the New Dual module will be accessible for transportation from March 2017. That will be trailed by 1.7kV, 3.3kV (HV100), 4.5kV and 6.5kV variants in a specific order from 2018 onwards. The organization additionally plans to add a lower-than 1.7kV rendition to the lineup later on.

High-control modules are key gadgets for controlling force transformation in electronic frameworks in an extensive variety of force classes from a few kilowatts up to a few megawatts. Up to this point, modules with the greatest voltage rating of up to 6.5kV and a most extreme current rating of a few thousand amperes have been monetarily accessible.

The New Dual HVIGBT module will fulfill interest for productive, high power thickness semiconductor gadgets with a scope of current and voltage evaluations, while adding to higher force yield and proficiency in inverters by embracing the most recent seventh-era IGBTs and RFC diodes. Then, the institutionalized bundle measurements will permit makers of mechanical gadgets to disentangle plan and secure numerous hotspots for inverters.

Item Features:

1. Contributing to high vitality effectiveness and high power thickness •The seventh-era IGBTs receiving CSTBTTM and RFC diodes acknowledge low power misfortune in inverter frameworks.

• Improved bundle innovation and low parasitic inductance empower the greatest execution.

• Three AC fundamental terminals on the LV100 bundle spread and even out current thickness, adding to expanded inverter capacity.

2. Common edge size backings more various inverter setups and limit •LV100 and HV100 modules have a typical bundle plan.

• Simple, standard associations take into consideration ideal framework outline and a scope of current evaluations.

• Lineup ranges from 1.7 to 6.5kV.

• Improved adaptability and versatility for framework design.

3. Contributing to higher configuration productivity by the utilization of an institutionalized new bundle

• Compatible with terminal and connection areas of Infineon Technologies AG (Germany) items.

Fuji Electric Announces Release of New High-Speed Discrete IGBT Series

January 20, 2016

Edison, NJ – Fuji Electric has added a new lineup of power semiconductors to its product portfolio with the “High-Speed W” Series of high-speed discrete IGBTs*.   The new product series utilizes a thinner IGBT chip for miniaturization, thereby reducing power loss (turnoff loss) in switching operation by approximately 40% compared to conventional products (High-Speed V Series). This contributes to energy saving and power cost reduction of the devices on which the products are mounted. Loss in switching operation has also been reduced (suppressed heat generation) for compatibility with higher switching frequencies (20 to 100 kHz) compared to conventional products (around 20 kHz).

 “The introduction of the High-Speed W Series is a valuable addition to our product portfolio as it offers our customers advanced features that they need to compete in today’s market,” said Jeff Knapp, General Manager of Fuji Electric’s Semiconductor Dept. “The new IGBT allows the ability to downsize the peripheral parts such as coils and transformers within the system and therefore contributes to the overall downsizing of the equipment itself, leading to a reduction in the total cost of ownership.”

The company cites the increasing global demand for energy in recent years as the driving force behind the development of the High-Speed W Series.  The need for the energy-saving performance of industrial and communications equipment, as well as the demand for downsizing and space-saving of the equipment itself spurred them to introduce a high-speed discrete IGBT that responded to these needs.

*IGBT: Insulated Gate Bipolar Transistor

About Fuji Electric Corp. of America

Fuji Electric Corp. of America is a wholly owned subsidiary of Fuji Electric Co., Ltd., and has been responsible for sales and distribution of the company’s products since 1970.  Fuji Electric Co., Ltd. began developing power electronics equipment in 1923, and is a global leader in industrial products ranging from semiconductors, HMIs, power supply, and power generation equipment to AC drives and uninterruptible power systems.  For more information please visit www.americas.fujielectric.com or follow us on Twitter @FujiElectricFEA.

Media Contact:

Doretta Caprarola

Fuji Electric Marketing Manager

(201) 490-3933

dcaprarola@fujielectric.com

Sales Contact:

Jeff Knapp

Fuji Electric General Manager

(201) 880-2145)

jknapp@fujielectric.com