Devices that raise the
technology to a whole new level, using SIC MOSFETS allows conversion to
operate at triple or more the switching frequency leading to benefits,
something that was impossible until now, Dr Helmut Gassel, president of
infineon`s Industrial Power control said these devices reached a whole
new level which has never before been possible, they are smaller and contain a
lighter system for less transportation and easier installation.
As we arrive to a new
era filled with new possibilities technology keeps changing, the SiC MOSFETs is
a prove of this, it has been optimized to combine reliability with performance.
They operate in a magnitude lower than 1200 V, this reduces the dynamic losses
and also supports system improvements in applications such as photovoltaic
inverters and charger/storage systems among others, this also extend the
support to industrial drives and the durable life of the devices.
These MOSFETS are
fully compatible with +15 V/-5V voltage typically used to drive IGBTs,
their structure combines a benchmark threshold voltage rating (V th) of
4V with a short circuit robustness which is required by the target
applications and fully controllable dv/dt characteristics, This initially
supports system improvements in applications such as photovoltaic inverters,
uninterruptible power supplies (UPS) or charger/storage systems, while later
configurations will also extend support to industrial drives.
The latest evolution of
Infineon`s comprehensive family of cool SiC technologies includes schottky
diodes , 1200 V J- FET devices and a range of hybrid solution that
integrates a better battery charging, energy storage and the integration of a
commutation robust body diode operating with nearly zero
reverse recovery losses.
For Infineon this is the
culmination of years of experience and improvements, truly something to
keep an eye on.
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