Hi-rel 1.2kV SiC Module Announced By Wolfspeed

Wolfspeed introduces SiC technology to outdoor systems in transportation and renewable energy. Wolfspeed has stretched its SiC power devices with the launch at PCIM 2017 of the industry’s inaugural power module that overcomes the tough environment qualification test for concurrent high-humidity, high-temperature and high-voltage situations. This reliableness benchmark allows system designers to utilize this device in outdoor applications such as transportation, wind, solar and other renewables where ultimate environmental conditions have traditionally challenged secure device operation. The latest all-SiC module, rated for 300 A and 1.2 kV blocking, was strained in an 85% relative humidity, 85 degrees celsius ambient while biased at 80% of rated voltage (960V). 

Accomplishment in tough situation testing under bias provides further confidence in the overall robustness of SiC device technology for all applications. “SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.” Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the tough environment test at the die level, the latest module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. 

Module construction uses high thermal conductivity aluminum nitride substrates and optimised assembly methods to meet industry thermal and power cycling requirements. “This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed’s chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.” Available under part number WAS300M12BM2, the latest module can be driven using existing Wolfspeed gate drivers for 62mm modules.

Infineon Raises SIC Mosfet to A Whole New Era of Improved Technology

Devices that raise the technology to a  whole new level, using SIC MOSFETS allows conversion to operate at triple or more the switching frequency leading to benefits, something  that was impossible until now, Dr Helmut Gassel, president of infineon`s Industrial Power control said these devices reached a  whole new level which has never before been possible, they are smaller and contain a lighter system for less transportation and easier installation.

As we arrive to a new era filled with new possibilities technology keeps changing, the SiC MOSFETs is a prove of this, it has been optimized to combine reliability with performance. They operate in a magnitude lower than 1200 V, this reduces the dynamic losses and also supports system improvements in applications such as photovoltaic inverters and charger/storage systems among others, this also extend the support to industrial drives and the durable life of the devices.

These  MOSFETS are fully compatible  with +15 V/-5V voltage typically used to drive IGBTs, their structure combines a benchmark  threshold voltage rating (V th) of  4V with a  short circuit robustness which is required by the target applications  and fully controllable dv/dt characteristics, This initially supports system improvements in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) or charger/storage systems, while later configurations will also extend support to industrial drives.

The latest evolution of Infineon`s comprehensive family of cool SiC technologies includes schottky diodes , 1200 V J- FET devices and a  range of hybrid solution that integrates a better battery charging, energy storage and the integration of a  commutation  robust  body diode operating with nearly zero  reverse recovery losses.

For Infineon this is the culmination of years  of experience and improvements, truly something to keep an eye on.

Infineon eleva a SIC a una nueva era para el mejoramiento de la tecnología

Aparatos que llevan a la tecnología a un nuevo nivel, usando SIC MOSFETS  permite conversión para operar  al triple o más, el cambio de la   frecuencia  conducen a beneficios, algo que era imposible hasta ahora, Dr. Helmut Gassel, presidente de Infineon´s Industrial Power Control dijo “que estos aparatos  lograron un nuevo nivel que jamás antes había sido posible llegar, son más pequeños y contienen un ligero sistema  para menos transportación y más fácil instalación”.

Así como llegamos a una nueva era llena de nuevas posibilidades que la tecnología siga cambiando, los SIC MOSFETS son una prueba de ello, optimizado para combinar fiabilidad con rendimiento. Operan en una magnitud más baja que 1200 V, esto reduce las perdidas y también apoyan al mejoramiento del sistema en aplicaciones como  Fotovoltaico inversores y sistemas de carga/almacenamiento entre otros, esto también extiende el apoyo  a drivers industriales y a la durabilidad de la vida de los aparatos.

Los MOSFITS son compatibles con +15 V/-5V voltage usados para conducir IGBTs, su estructura combina rango de voltaje de umbral de referencia (V th) de  4V con un corto circuito robusto que es requerido por  la aplicación y totalmente controlable características  dv/dt.  Esto inicialmente apoya a mejoras del sistema en aplicaciones  como Fotovoltaico inversores y sistemas de carga/almacenamiento entre otros, esto también extiende el apoyo  a drivers industriales también se extiende a controladores industrials.

La última evolución  de la familia Infineons de SIC Technology  incluye schottky diodes, 1200 V J- FET aparatos y una gama de soluciones hibridas  que integra una mejor carga de la batería, ahorro de energía y la integración de un cuerpo robusto de conmutación diodo funcionamiento.

Para Infineon  esto es la culminación de años de experiencia y mejoras, realmente algo para tener a la vista.

Infineon Raises SIC Mosfet to a Whole New Era of Improved Technology

Devices that raise the technology to a  whole new level, using SIC MOSFETS allows conversion to operate at triple or more the switching frequency leading to benefits, something  that was impossible until now, Dr Helmut Gassel, president of infineon`s Industrial Power control said these devices reached a  whole new level which has never before been possible, they are smaller and contain a lighter system for less transportation and easier installation.

As we arrive to a new era filled with new possibilities technology keeps changing, the SiC MOSFETs is a prove of this, it has been optimized to combine reliability with performance. They operate in a magnitude lower than 1200 V, this reduces the dynamic losses and also supports system improvements in applications such as photovoltaic inverters and charger/storage systems among others, this also extend the support to industrial drives and the durable life of the devices.

These  MOSFETS are fully compatible  with +15 V/-5V voltage typically used to drive IGBTs, their structure combines a benchmark  threshold voltage rating (V th) of  4V with a  short circuit robustness which is required by the target applications  and fully controllable dv/dt characteristics, This initially supports system improvements in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) or charger/storage systems, while later configurations will also extend support to industrial drives.

The latest evolution of Infineon`s comprehensive family of cool SiC technologies includes schottky diodes , 1200 V J- FET devices and a  range of hybrid solution that integrates a better battery charging, energy storage and the integration of a  commutation  robust  body diode operating with nearly zero  reverse recovery losses.

For Infineon this is the culmination of years  of experience and improvements, truly something to keep an eye on.