Devices
that raise the technology to a whole new level, using SIC MOSFETS allows
conversion to operate at triple or more the switching frequency leading to
benefits, something that was impossible until now, Dr Helmut Gassel,
president of infineon`s Industrial Power control said these devices reached a
whole new level which has never before been possible, they are smaller
and contain a lighter system for less transportation and easier installation.
As
we arrive to a new era filled with new possibilities technology keeps changing,
the SiC MOSFETs is a prove of this, it has been optimized to combine
reliability with performance. They operate in a magnitude lower than 1200 V,
this reduces the dynamic losses and also supports system improvements in
applications such as photovoltaic inverters and charger/storage systems among
others, this also extend the support to industrial drives and the durable life
of the devices.
These
MOSFETS are fully compatible with +15 V/-5V voltage typically used
to drive IGBTs, their structure combines a benchmark threshold voltage
rating (V th) of 4V with a short circuit robustness which is
required by the target applications and fully controllable dv/dt
characteristics, This initially supports system improvements in applications
such as photovoltaic inverters, uninterruptible power supplies (UPS) or
charger/storage systems, while later configurations will also extend support to
industrial drives.
The
latest evolution of Infineon`s comprehensive family of cool SiC technologies
includes schottky diodes , 1200 V J- FET devices and a range of hybrid
solution that integrates a better battery charging, energy storage and the
integration of a commutation robust body diode operating with
nearly zero reverse recovery losses.
For
Infineon this is the culmination of years of experience and improvements,
truly something to keep an eye on.
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