IGBT WITH TRACTION INVERTERS

For locomotives, which are driven by diesel or electricity, EMU and DEMU vehicles with AC Traction Motors, new microprocessor based AC-AC Traction System (MAS) offers the latest in technology combining IGBT based Traction Converter with DSP and microprocessor based embedded controls. Microprocessor based Locomotive Control system is used in conjunction with IGBT based traction converter to implement this solution.

Every traction converter can be configured to have single or multiple inverters. Each Inverter can be further configured to drive single traction motor (independent axle control) or multiple traction motors (bogie control). Existing product offering ranges from 650kW per Inverter for bogie control to 550kW per Inverter for independent axle control. Anywhere between 2 to 6 such inverters are packaged into one traction converter depending on application with total power rating in the range of 1.3MW to 3MW. Last solution can be scaled or optimized for specific application requirement.

Typically heat pipe depended heat sinks are used with forced air cooling to cool down the IGBT switching devices. Both on-board as well as under frame options are available depending on space, weight constraints and cooling air availability. The blowers for cooling air are controllable at different speeds or can be turned off depending on heat sink temperatures, so as to enhance the blower life.

IGBT in the Energy Generation Sector of Fossil Fuels

Among the legacy power generation technologies, gas turbine power plants are being deployed due to the discovery of large amounts of natural gas in the United States and Australia. A permanent magnet generator is run directly from a gas turbine without a gear-box for enhanced reliability. The generator terminal voltage is at a nominal 600-Hz which must be rectified and then converted to a well regulated 50 or 60 Hz AC power for transmission to points of use. IGBT power switches are now being used for this application because of the availability of high voltage, high-current modules from many manufacturers. A 1.6 Giga-Watt gas power plant can be designed using 6 modular 300 kVA three phase voltage source IGBT stacks with 6 IGBTs in a typical bridge configuration. The design allows full control of the AC current and power factor on the grid-side. The IGBT stacks are paralleled to satisfy the 1.6 Giga-Watt power requirements. The availability of intelligent IGBT power modules with gate drivers and protection circuits has accelerated the adoption of this technology.

FF800R17KF6C_B2 - An Ideal IGBT Pair for Wind Power System

FF800R17KF6C_B2, a 1700V IHM 130mm Dual IGBT Module with IGBT2 Low Loss, enlarged diode and AlSiC base-plate. It’s the best solution for your renewable energy and industry applications. The module is manufactured by Infineon Technologies AG, a renowned semiconductor manufacturer from Germany. Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy Efficiency, Mobility and Security. FF800R17KF6C_B2 is highly reliable and features robust module construction. It has enlarged diode for regenerative operation.

Power semiconductors have a major role to generate energy from renewable sources. In wind turbines, power semiconductors are utilized to transform power and to combine the generator with the grid. They are also made into different subsidiary drives such as pitch drives, yaw drives, pumps and into protection circuits like crowbars. A number of vital functions and applications are controlled by wind power converters and that’s why highest quality power semiconductors are required. This is applicable in specific to offshore wind converters which operate in immensely tough conditions exposed to salt, humidity etc. Speedy growth is planned for the offshore portion. FF800R17KF6C_B2 is a perfect choice in these fields.

Wind energy turbines must also be intended to deliver maximum levels of availability in order to contribute to grid stability. This applies not only to the converter, but also to the different subsidiary drives mounted in different positions. Grid stability therefore depends on power semiconductor assemblies offering dynamic capabilities, outstanding functionality and superior reliability.

Advantages like high power density for compact inverter designs & standardized housing can be found if we use FF800R17KF6C_B2 in wind power applications.

There has been flourishing global advancement in wind power generation. The sum of power produced using wind-power has raised from 7.5 Giga-Watts in 1997 to 74 Giga-Watts in 2006 with further increment happening at the rate of a doubling of generation every three to four years. It is calculated that 12 percent of the world’s electricity requirements will be supplied by wind-power in 2020. The prominent wind power generators in the world are Germany and Spain, succeeded by the United States. China is also invasively imitating wind-power generation. China blueprints to spend $ 700 Billion until 2020 in renewable energy projects. Huadian Power International Corporation, a China based company has obtained authorization to build two wind power projects with an associated capability of 147 Mega-Watts. Moreover, an Indian company, Suzlon Energy, has become the world’s eighth largest generator of wind turbine generators. Companies have also fixed on wind-power as a significant growth segment in the future.

http://www.uscomponent.com had been selling IGBT power transistor modules since 2001.Infineon, Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

http://www.uscomponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

PARALLELING SYSTEMS FOR IGBTS AND THEIR IMPROVEMENT

Widespread application of IGBTs in the past two decades has resulted in dramatic improvement in performance of power electronic converters, the efficiency of these devices has made its mark, reducing the cost of power electronic systems and  improving their own reliability, making them the first option of the manufacturing industry, Paralleling systems for IGBTS and diodes is one of the best alternatives to achieve a best performance.

The conclusion is that paralleling systems for igbts provides an advantage due to the improved thermal behavior of several small chips rather than fewer big ones. The breakthrough in performance is seen when real life data of parameter variations within one power module are considered, instead of the datasheet values, which suggest a much higher spread than actually seen in real life.

Infineon Raises SIC Mosfet to A Whole New Era of Improved Technology

Devices that raise the technology to a  whole new level, using SIC MOSFETS allows conversion to operate at triple or more the switching frequency leading to benefits, something  that was impossible until now, Dr Helmut Gassel, president of infineon`s Industrial Power control said these devices reached a  whole new level which has never before been possible, they are smaller and contain a lighter system for less transportation and easier installation.

As we arrive to a new era filled with new possibilities technology keeps changing, the SiC MOSFETs is a prove of this, it has been optimized to combine reliability with performance. They operate in a magnitude lower than 1200 V, this reduces the dynamic losses and also supports system improvements in applications such as photovoltaic inverters and charger/storage systems among others, this also extend the support to industrial drives and the durable life of the devices.

These  MOSFETS are fully compatible  with +15 V/-5V voltage typically used to drive IGBTs, their structure combines a benchmark  threshold voltage rating (V th) of  4V with a  short circuit robustness which is required by the target applications  and fully controllable dv/dt characteristics, This initially supports system improvements in applications such as photovoltaic inverters, uninterruptible power supplies (UPS) or charger/storage systems, while later configurations will also extend support to industrial drives.

The latest evolution of Infineon`s comprehensive family of cool SiC technologies includes schottky diodes , 1200 V J- FET devices and a  range of hybrid solution that integrates a better battery charging, energy storage and the integration of a  commutation  robust  body diode operating with nearly zero  reverse recovery losses.

For Infineon this is the culmination of years  of experience and improvements, truly something to keep an eye on.

Renesas Electronics Launches Their 8th Generation That Improves The Solar Systems

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the availability of six new products in the 8th-generation G8H Series of insulated gate bipolar transistor (IGBT) devices that minimizes conversions losses, in power conditioners for solar power generation systems and reduce inverter applications in uninterruptable power supply (UPS) systems.

Compared to the previous generation of IGBTS, these are said to be faster and have a  better switching performance along with a  better charging system while also reducing the conduction loss by lowering the saturation voltage. Additionally, the devices’ performance index is claimed to have been improved by up to 30% compared to the previous 7th-generation IGBTs.

In solar power system IGBTS  theres always some amount of power loss that’s why it’s a top priority to reduce this problem, reducing the power loss has a positive impact when manufacturing and using these modules.

Some key features about this 8^th generation are:

·         Faster switching, industry-leading ultra-low power loss features ideal for inverter circuits

·         Eliminated external gate resistors thanks to low switching noise

·         Industry’s-First 1,250 V IGBT with built-in diode in a TO-247 plus discrete-package version available for 75 A current band rated at 100C

·         TO-247 package with excellent heat dissipation; operation guaranteed at high temperatures up to 175°C

IGBT in Renewable Energy Power Generation Sector

The production of electricity in the United States is mainly achieved by burning fossil fuels such as coal and natural gas. It is noteworthy that the demand for electricity is steadily increasing since the 1980s with no sign of abatement. The increased demand for electricity is being served by the installation of electricity generation plants based on fossil fuels. Since fossil fuels produce carbon dioxide emissions, it would be preferable to enhance the deployment of electricity production using renewable energy sources such as wind-power and solar-power. At the recent (May 2011) Doha conference, the U.N. Intergovernmental Panel on Climate Change published a report stating: “It is likely that renewable energy will have a significantly larger role in the global energy system in the future than today.”

The renewable energy sources are considered the most promising options in the near future. According to the U.S. Department of Energy, offshore wind farms, alone could produce 900 Giga-Watts of power which is sufficient to supply the needs of the entire United States. According to the European Photovoltaic Industry Association, solar energy reaching the earth, converted to electricity using solar-farms could satisfy global energy needs 10,000 times over. Other renewable energy sources include wave-power, geothermal-power, etc. In the first six months of 2010, 11 percent of the electricity produced in the U.S. came from renewable energy sources. In March 2011, China released its new five-year plan with goals of 11.4 percent of energy generated using non-fossil fuels. The IGBT is a critical technology required for the deployment of all renewable energy sources.

APPLICATIONS OF IGBT

Now-a-days the IGBT (Insulated Gate Bipolar Transistor) is extensively applied in the transportation, renewable power generation, consumer, aircraft, medical, industrial and financial sectors all worldwide. As a result, billions of people from around the globe are enjoying enhanced comfort, convenience, and quality of life. IGBTs are known for their fantastic efficiency and speedy switching characteristics. These qualities make IGBTs very suitable for applications where saving energy and protecting the environment are very important. IGBTs are being used in almost all sectors of our economy because there isn’t any exact alternative available which can be used in place IGBT and can offer same advantages.

Over the last 20 years, the cumulative influence of the advanced capability of IGBT-powered applications has been an aggregate worth savings of $ 2.7 Trillion for U.S. consumers and $ 15.8 Trillion for consumers all over the world. On the other hand, the developed efficiency generated by IGBT-powered applications has propagated a cumulative lessening in carbon dioxide emissions by 35 Trillion pounds in the United States and 78 Trillion pounds worldwide during the last 20 years. So, the IGBT has already had a key impact to make a sustainable world-wide society with advanced living standards along with alleviating the environmental impact.

After its conception in the early 1980s, the applications for IGBTs have been incessantly spreading. It has already had a great impact on: the transportation sector, the consumer sector, automation sector, industrial sector, medical sector, aerospace sector, marine sector, defense sector; financial sector, power transmission and distribution sector, renewable energy power generation sector and many other sectors of the economy.

What would happen if all the IGBT were removed from the applications that they serve today?” The answer is quite revealing: Our new solar and wind based renewable energy sources would not be able to deliver power to the grid because the inverters would stop functioning. Our gasoline power cars would stop running because the electronic ignition systems would no longer function. Our hybrid electric and electric cars would stop running because the inverters used to deliver power from the batteries to the motors would no longer function. Our electric mass-transit systems would come to a standstill because the inverters used to deliver power from the power-grid to the motors would no longer function. Our air-conditioning systems in homes and offices would stop working because the inverters used to deliver power from the utility company to the heat-pumps and compressors would no longer function. Our refrigerators and vending machines would no longer function making the delivery and storage of perishable products impossible. Our factories would come to a grinding halt because the numerical controls use to run the robots would cease to function. Our new low-energy compact fluorescent bulbs would stop functioning limiting our activities to the daytime. Our portable defibrillators recently deployed in emergency vehicles, on-board airplanes, and in office buildings would no longer be operational putting over 100,000 people at the risk of death from cardiac failure.

In one statement, the quality of life in our society would be greatly deteriorated if the IGBT is no longer available. It’s a blessing of modern science.

Infineon's New IGBT Saves Money on Electricity

Infineon Technologies has introduced a new family of cost optimized discrete IGBTs that can be dropped into existing designs of low- to mid-price range induction cookers and induction rice cookers.

Induction cooking appliances commonly make use of resonant topologies which allow bi-directional current flow and need a discrete IGBT that performs best at switching frequencies from 18 to 40 kHz with low losses.

The new RC-E family features an IGBT with monolithically integrated reverse conduction diode for resonant switching that is also optimized for low switching and conduction losses. Lower losses allow designers to have efficiency and power targets for induction cooking applications more easily so that less energy is consumed for cooking. With low E off, VF, R th and V ce(sat), the device architecture sets a new industry benchmark in price/performance and ease-of-use.

The INFIPC201610-004 fulfills all the requirements for soft switching applications and efficiency as well as EMI standards with a lower BoM cost. The RC-E is offered in a standard TO-247 package allowing a drop-in replacement for existing designs.

IGBT Market Will Reach $11 Billion by 2022

Asia-Pacific dominates the global market, accounting for more than 50% revenue share of the overall IGBT market, followed by Europe.

High power IGBT segment is projected to maintain its lead in the overall IGBT market, as these modules are used for power transmission in high voltages with minimum current loss. Moreover, Asia-Pacific is the major revenue contributor of this market due to increasing demand for electric vehicles utilizing IGBT for power transaction. China, India, and Japan are the major consumers of IGBT in Asia-Pacific.

Electric vehicle segment is expected to exhibit the fastest growth during the forecast period, owing to increasing applications of IGBT in e-bikes and e-cars. Because High-Voltage IGBTs are integrated automotive applications, as they enable power management and reduce power leakage, Telsa has been using IGBT made by International Rectifier in its popular Model S.

IGBT market will continute growing in the near future.

IGBT - A Critical Part in Electric Car

As the first affordable electric sports sedan, the Model 3 is Tesla’s eco-friendly gift to the motoring masses. While  Model 3 is still under development, we all know Telsa is using TO-247 IGBT in its famouse Model S.

TELSA 's Vehicle electrification is heavily impacting the today's IGBT market, with huge volumes and significant added value because of the power modules used. Vehicle volume will be critical by 2018, and the IGBT market for electrified vehicles will more than tripled over the next a few years. By 2022, we expect electrified vehicles to represent almost 70% of the IGBT market.

No dout IGBT is already a critical part in electric car.

Various Usage of CM25MD-24H - SPANISH

Un IGBT o transistor bipolar de puerta aislada, es un dispositivo de estado sólido (sin partes móviles). Es un interruptor que se utiliza con el fin de permitir el flujo de energía en el estado activado y para detener el flujo de energía cuando está en el estado desactivado. Un IGBT funciona mediante la aplicación de tensión a un componente semiconductor, por lo tanto, cambiar sus propiedades para bloquear o crear una trayectoria eléctrica.

IGBTs se utilizan en aplicaciones de alta potencia, tales como:

- las unidades de motor aplicadas

- controladores de motores para vehículos eléctricos

- convertidores de corrección del factor de potencia

- Fuente de poder ininterrumpida

- Los inversores solares

- soldadores de alta frecuencia

- cocinas de calentamiento por inducción

Mayormente para usar en motores con fines de control y variadores de Mitsubishi Corp. ha fabricado un módulo IGBT. CM25MD-24H es un dispositivo perfecto que se puede emplear en robótica.

Descripción del producto:

USO DE LA ENERGÍA MEDIA DE CONMUTACIÓN TIPO AISLADO, 25 AMP, 1200 VOLTIOS, SOLICITUD: controles de motores de CA y CC, inversores de propósito general, los controles servo, NC, robótica, entre otras.

100 amperios, 600 voltios, TRANSISTOR DE POTENCIA

Información Adicional:

Marca

Mitsubishi

inversores; control de motor de corriente continua; Fuentes de alimentación conmutadas; control de motores de CA

Caracteristicas:

Módulo IGBT El transistor de potencia

Enlace del producto

CM25MD-24H - Mitsubishi módulo IGBT Transistor

Utilization of CM200DY-12H in Motor Control - SPANISH

Debido a las restricciones en el alcance y las baterías no fiables, los vehículos eléctricos cayeron en desgracia hasta la década de 1990. Con el aumento de reconocimiento del suministro de gasolina vulnerables desde el Oriente Medio y el impacto en la salud urbana debido a la contaminación de los coches con motor de gasolina, el coche híbrido-eléctrico ha tomado un punto de apoyo en el mercado del automóvil. Incluso desde la década de 1990, era evidente que el IGBT es el interruptor de alimentación ideal para las unidades de motor en los vehículos eléctricos. Todos los coches eléctricos e híbridos-eléctricos que se han introducido posteriormente en el mercado han dependido de seguridad en unidades de motor basados en IGBT. Además, la capacidad de frenado regenerativo, que tiene un gran impacto en la eficiencia de los vehículos híbridos-eléctricos, se apoya sobre los modulos IGBT.

Casi todos los fabricantes están utilizando estos IGBT ahora en los vehículos eléctricos e híbridos eléctricos realizados por ellos para la entrega y control de la energía a sus motores. Esto continuará teniendo una gran influencia en la capacidad de nuestra sociedad para asi poder migrar lejos del consumo de gasolina en el futuro.

Descripción del producto:

ALTA POTENCIA TIPO AISLADO USO DE LA CONMUTACIÓN DE LOS MÓDULOS DEL TRANSISTOR DE POTENCIA IGBT, Dual IGBTMOD 200 amperios / 600 voltios, 600 V, 200 Amperios VCES dual IGBT MÓDULO TRANSISTOR DE POTENCIA. Tipo Corriente nominal VCES. Voltios Amperios x 50 cm 200 12

100 amperios, 600 voltios, TRANSISTOR DE POTENCIA

Ficha de datos

Marca

Mitsubishi

inversores; control de motor de corriente continua; Fuentes de alimentación conmutadas; control de motores de CA

Caracteristicas:

Módulo IGBT El transistor de potencia

Enlace del producto

CM200DY-12H - Mitsubishi módulo IGBT Transistor

Traductor de Google para empresas:Google Translator ToolkitTraductor de sitios webGlobal Market Finder

Use of CM50E3U-24H in Motor Drives - SPANISH

Mitsubishi Electric ha desarrollado convertidores de fuente de tensión para sistemas de accionamiento del motor de corriente alterna con inversores IGBT basado servir aplicaciones bajo 3,600kVA e inversores de tiristores GTO para los niveles de potencia más altos. Debido a que las líneas de fabricación de acero utilizan tantos motores de velocidad variable, las reducciones del tamaño de las unidades de accionamiento de motor pueden contribuir a un ahorro sustancial en espacio en la fábrica que reducen los costos de inversión. convertidores de alto factor de potencia son otro foco de desarrollo de la tecnología, ya que estos convertidores de energía producen menos reactivos e introducen los niveles más bajos de los armónicos de la línea eléctrica. CM50E3U-24H es un dispositivo IGBT que se utiliza en los inversores para sistemas de accionamiento de motor de CA / CC.

Descripción del producto:

1200V (VCES), 50 amperios IGBT. Módulo. USO MEDIO DE LA CONMUTACIÓN DE POTENCIA. TIPO AISLADO

100 amperios, 600 voltios, TRANSISTOR DE POTENCIA

Ficha de datos

Información Adicional:

Marca

Mitsubishi

inversores; control de motor de corriente continua; Fuentes de alimentación conmutadas; control de motores de CA

Caracteristicas:

Módulo IGBT El transistor de potencia

CM50E3U-24H - Mitsubishi IGBT Transistor módulo