Mitsubishi Electric CM200DY-24A IGBT Module

CM200DY-24A is a high-performance Insulated Gate Bipolar Transistor (IGBT) module produced by Mitsubishi Electric Corporation. It is designed for high-power switching applications and consists of two IGBTs in a half-bridge configuration.

The IGBT module has a current rating of 200A and a voltage rating of 1200V. It also includes a built-in freewheeling diode for each IGBT, which allows for efficient switching and reduced power losses.

The CM200DY-24A IGBT module is designed with low-on resistance and high-speed switching characteristics, making it suitable for use in various power electronics applications, such as motor drives, renewable energy systems, and industrial automation. It is also designed with a compact and robust package, which enables easy installation and provides high reliability in harsh operating environments.

The module is also equipped with a temperature sensor for over-temperature protection and has a low thermal resistance, which helps to improve its heat dissipation performance.

Overall, the CM200DY-24A IGBT module is a high-performance device designed to meet the demanding requirements of modern power electronics applications, providing efficient and reliable power switching capabilities. Its high current and voltage ratings make it suitable for high-power applications that require precise and rapid switching.

Mitsubishi Electric IGBT Power Module CM50DY-24H

CM50DY-24H is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. It is produced by Mitsubishi Electric Corporation and consists of two IGBTs in a half-bridge configuration.

The IGBT module has a current rating of 50A and a voltage rating of 1200V. It also includes a built-in freewheeling diode for each IGBT, which allows for efficient switching and reduced power losses.

The CM50DY-24H IGBT module is designed with low-on resistance and high-speed switching characteristics, making it suitable for use in various power electronics applications, such as motor drives, renewable energy systems, and industrial automation. It is also designed with a compact and robust package, which enables easy installation and provides high reliability in harsh operating environments.

In addition, the CM50DY-24H IGBT module is equipped with a temperature sensor for over-temperature protection and has a low thermal resistance, which helps to improve its heat dissipation performance.

Overall, the CM50DY-24H IGBT module is a high-performance device designed to meet the demanding requirements of modern power electronics applications, providing efficient and reliable power switching capabilities.

Ferraz Shawmut Fuse A70QS500-4K

A70QS500-4K is an electric fuse manufactured by Ferraz Shawmut, a leading supplier of electrical protection products. It is a high-speed fuse designed to provide protection against short-circuit faults in high-power electrical systems.

This fuse has a voltage rating of 700V and a current rating of 500 amps, with a breaking capacity of 400kA at 700V AC. It features a fast-acting response time, which helps to quickly interrupt the circuit in the event of a fault and prevent damage to equipment and personnel.

The A70QS500-4K electric fuse also has a low power loss, which minimizes energy waste and reduces operating costs. It is built with high-quality materials and designed to withstand harsh environmental conditions, making it suitable for use in a wide range of industrial and commercial applications.

Overall, the A70QS500-4K electric fuse is a reliable and high-performance solution for protecting high-power electrical systems against short-circuit faults, providing excellent safety and reliability for critical industrial processes.

Fuji Electric IGBT Module A50L-0001-0340

 A50L-0001-0340 is a type of Insulated Gate Bipolar Transistor (IGBT) module produced by Fuji Electric, a leading manufacturer of power electronics components. It is designed for use in high-power switching applications, such as motor drives, renewable energy systems, and industrial automation.

The IGBT module has a current rating of 50A and a voltage rating of 600V. It consists of two IGBTs and two freewheeling diodes in a half-bridge configuration, which allows it to switch high power loads efficiently.

The A50L-0001-0340 IGBT module is designed with low-on resistance and high-speed switching characteristics, which result in low power dissipation and high efficiency. It is also designed with a compact and robust package, which provides excellent thermal performance and high resistance to mechanical stress.

The module is also equipped with an electrical interlock system that prevents incorrect module insertion, ensuring safe and reliable operation.

Overall, the A50L-0001-0340 IGBT module is a high-performance device that provides efficient and reliable power switching capabilities in high-power applications. Its high current and voltage ratings, combined with its low-on resistance and high-speed switching characteristics, make it suitable for use in demanding power electronics applications that require high switching frequencies, such as high-frequency inverters and converters.

Fuji Electric Distributor of 7MBR20SA060-70 IGBT Module

7MBR20SA060-70 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module produced by Fuji Electric, a leading manufacturer of power electronics components. It is designed for use in high-power switching applications, such as motor drives, renewable energy systems, and industrial automation.

The IGBT module has a current rating of 20A and a voltage rating of 600V. It consists of six IGBTs and six diodes arranged in a three-phase bridge configuration, which enables it to drive three-phase loads such as motors and generators.

The 7MBR20SA060-70 IGBT module is designed with low-on resistance and high-speed switching characteristics, which result in low power dissipation and high efficiency. It is also designed with a compact and robust package, which provides excellent thermal performance and high resistance to mechanical stress.

The module is also equipped with an electrical interlock system that prevents incorrect module insertion, ensuring safe and reliable operation.

Overall, the 7MBR20SA060-70 IGBT module is a high-performance device that provides efficient and reliable power switching capabilities in high-power applications. Its ability to drive three-phase loads, combined with its low-on resistance and high-speed switching characteristics, makes it suitable for use in demanding power electronics applications that require high efficiency and precise control.

Fuji Electric IGBT 1MBI600U4-120

1MBI600U4-120 is an insulated gate bipolar transistor (IGBT) designed for use in high-power switching applications. It is manufactured by Fuji Electric and is designed to handle high voltage and current loads.

The "1MBI" in the part number indicates that it is a single IGBT module with a built-in free-wheeling diode. The "600" indicates the maximum voltage rating of the device, which is 600 volts. The "U4" indicates the current rating of the device, which is 120 amps. The "120" indicates the maximum switching frequency of the device, which is 120 kHz.

IGBTs are semiconductor devices that are used for switching high power loads. They combine the features of bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) to provide high voltage and current capabilities with fast switching times. The 1MBI600U4-120 IGBT is designed to handle high-power applications such as motor drives, power supplies, and welding equipment.

The 1MBI600U4-120 IGBT has a low on-state voltage drop, allowing for efficient operation with low power dissipation. It also has a built-in free-wheeling diode, which provides protection against reverse current flow. The device is designed with a compact and robust package, making it suitable for use in harsh environments.

Overall, the 1MBI600U4-120 IGBT is a reliable and efficient component for high-power switching applications. Its high voltage and current ratings, low on-state voltage drop, and built-in free-wheeling diode make it suitable for use in a variety of industrial and automotive applications.

Fuji Electric Distributor of 1MBI300U4-120 IGBT Module

1MBI300U4-120 is an insulated-gate bipolar transistor (IGBT) module designed for use in high-power switching applications. It is a member of the Mitsubishi Electric Corporation's IGBT module series, which offers a range of high-performance power semiconductors for industrial and commercial applications.

Here are some key specifications of the 1MBI300U4-120 IGBT module:

Maximum collector-emitter voltage (Vce): 1200V

Maximum collector current (Ic): 300A

Maximum power dissipation (Pd): 1900W

Operating temperature range: -40°C to 150°C

Mounting type: Module

This IGBT module features low on-state voltage drop, high current capability, and fast switching speed, making it suitable for applications such as motor drives, power supplies, and inverters. It is also equipped with built-in temperature and overcurrent protection features for enhanced safety and reliability.

IXYS Bridge Rectifier VUO190-12NO7

VUO190-12NO7 is a bridge rectifier diode, which is an electronic component used to convert alternating current (AC) into direct current (DC) by rectifying the voltage.

The "VUO" prefix is likely the part number prefix assigned by the manufacturer, while "190" refers to the maximum repetitive peak reverse voltage (VRRM) rating of the diode in volts. "12" refers to the maximum average forward rectified current (IF(AV)) in amps, and "NO7" is a package code or designation used by the manufacturer to indicate the specific package or form factor of the diode.

Based on this information, the VUO190-12NO7 bridge rectifier diode can handle a maximum peak reverse voltage of 190 volts, a maximum average forward rectified current of 12 amps and comes in a specific package type designated by the manufacturer as NO7.

SCR Silicon Controlled Rectifier TT425N16KOF

TT425N16KOF is a Silicon Controlled Rectifier (SCR) manufactured by Vishay Semiconductors.

The SCR is a type of semiconductor device that can switch and control large amounts of power, making it suitable for a variety of industrial applications.

The TT425N16KOF SCR has the following specifications:

Repetitive Peak Off-State Voltage (Vdrm): 1600V

On-State Current (It(RMS)): 425A

Peak Non-Repetitive Surge Current (Itsm): 5500A

Gate Trigger Current (Igt): 150mA

Operating Temperature: -40°C to +125°C

This SCR is designed for use in high-power industrial applications such as power supplies, motor controls, and welding equipment. It features high voltage and current ratings, low on-state voltage drop, and high surge capability, making it a reliable option for high-power switching and control.

Toshiba IGBT Module MG50Q6ES40

MG50Q6ES40 is an Insulated Gate Bipolar Transistor (IGBT) that is designed for use in high-power switching applications. It is a N-Channel IGBT that can handle a maximum collector current of 50A and a maximum collector-emitter voltage of 600V.

The IGBT features a low on-state voltage drop, which means that it can conduct large amounts of current with low power dissipation. This results in high efficiency and reduced heat generation. Additionally, the IGBT has a fast switching speed, which allows for high-frequency operation.

The MG50Q6ES40 is packaged in a high-performance module that offers excellent thermal conductivity and electrical insulation properties. It has six terminals for easy connection to external circuitry.

This IGBT is commonly used in power supplies, motor drives, and other high-power applications where efficient and reliable switching is required. Its low on-state voltage drop, fast switching speed, and high voltage capability make it a popular choice among engineers and designers in the power electronics industry.

Powerex KD421K15 Darlington Transistor

KD421K15 is a dual Darlington transistor module that contains two high-current, high-gain Darlington transistors in a single package. Each transistor consists of two PNP transistors connected in a Darlington configuration, which provides a high current gain and a low saturation voltage. The module is designed for use in a wide range of applications, including motor control, power supply regulation, and audio amplification.

The KD421K15 module is housed in a TO-3P package, which is a popular form factor for high-power semiconductors. The package has three leads, with the center lead connected to a metal tab that serves as a heat sink for the transistors. The module is rated for a maximum collector current of 5A and a maximum collector-emitter voltage of 120V. The typical DC current gain of each transistor is 1000, and the typical saturation voltage is 1.5V at a collector current of 3A.

The KD421K15 module is designed for ease of use, with the two transistors pre-mounted on a common heat sink and with the necessary base resistors already installed. The module can be directly mounted on a printed circuit board or attached to a heat sink using screws or a clip. The module also has a built-in protection diode to protect against voltage spikes and transients.

Overall, the KD421K15 dual Darlington transistor module is a reliable and convenient component for high-current, high-gain amplification and control applications.

Infineon IGBT Module FZ1200R17KF6C_B2

FZ1200R17KF6C_B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies.

The "FZ1200R17KF6C" part of the name refers to the IGBT module itself, while "_B2" is likely a designation for a specific version or revision of the module.

The FZ1200R17KF6C_B2 IGBT module has the following specifications:

Collector-Emitter Voltage (Vces): 1700V

Collector Current (Ic): 1200A

Maximum Power Dissipation (Pd): 7500W

Gate-Emitter Voltage (Vges): +/- 20V

Operating Temperature: -40°C to +125°C

This IGBT module is designed for use in high-power applications, such as industrial motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications.

Infineon IGBT Module FZ400R17KE3

FZ400R17KE3 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high power switching applications. It is part of the IGBT4 series from Infineon Technologies.

The module has a maximum collector-emitter voltage of 1700V and a maximum collector current of 400A. It has a low on-state voltage drop and high switching speed, making it suitable for high-frequency switching applications.

The FZ400R17KE3 is designed with a 7th generation IGBT chip and an advanced diode for improved performance and efficiency. It also features a low-inductance module design for reduced switching losses and a longer lifespan.

The module is equipped with a thermistor for temperature monitoring and protection against over-temperature conditions. It also has a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.

Overall, the FZ400R17KE3 is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment.

SanRex CVM75BB160 Bridge Diode Rectifier

CVM75BB160 is a high-power bridge rectifier diode designed for use in high-voltage and high-current applications. It is a four-terminal device that consists of four diodes arranged in a bridge configuration. This allows the diode to convert an alternating current (AC) input signal into a direct current (DC) output signal.

The CVM75BB160 diode is housed in a compact and rugged module that is designed for easy mounting and high reliability. The module is constructed using a high-temperature, thermally conductive material that allows for efficient heat dissipation. The diode module is rated for a maximum peak reverse voltage of 1600V and a maximum average forward current of 75A.

The CVM75BB160 diode module has low forward voltage drop and low leakage current, which results in high efficiency and low power dissipation. The module also has a high surge capability, which makes it suitable for use in applications with high transient overloads. The diode module has a built-in snubber circuit that reduces voltage spikes and transients, protecting the diode from damage and increasing the module's overall reliability.

Overall, the CVM75BB160 bridge rectifier diode module is a high-performance and reliable component that is widely used in power supply, motor control, and other high-current applications. Its compact and rugged design, high surge capability, and built-in protection features make it an ideal choice for demanding industrial and commercial applications.

Mitsubishi IGBT Module CM400DU-12NFH

CM400DU-12NFH is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric.

The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.

The CM400DU-12NFH IGBT module has the following specifications:

• Collector-Emitter Voltage (Vces): 1200V

• Collector Current (Ic): 400A

• Maximum Power Dissipation (Pd): 2200W

• Gate-Emitter Voltage (Vges): +/- 20V

• Operating Temperature: -40°C to +150°C

This IGBT module is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high-power applications.

Mitsubishi Electric IGBT Distributor of CM200DU-24NFH

CM200DU-24NFH is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. It is manufactured by Mitsubishi Electric.

The module has a maximum collector-emitter voltage of 1200V and a maximum collector current of 200A. It is designed with a 7th-generation IGBT chip and an advanced diode for improved performance and efficiency.

The CM200DU-24NFH also features a low-inductance module design for reduced switching losses and improved reliability. It is equipped with a temperature sensor for monitoring and protection against over-temperature conditions.

The module is designed with a compact and lightweight package, making it suitable for use in space-constrained applications. It also features a high surge current capability, which makes it suitable for use in applications with high current transients.

The CM200DU-24NFH is equipped with a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.

Overall, the CM200DU-24NFH is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment. It offers high power density, high efficiency, and improved reliability, making it an ideal solution for demanding high-power applications.

Mitsubishi Electric IGBT Module CM50DY-12H

CM50DY-12H is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric.

The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.

The CM50DY-12H IGBT module has the following specifications:

Collector-Emitter Voltage (Vces): 1200V

Collector Current (Ic): 50A

Maximum Power Dissipation (Pd): 330W

Gate-Emitter Voltage (Vges): +/- 20V

Operating Temperature: -40°C to +150°C

This IGBT module is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high-power applications.

Fuji Electric IGBT Distributor of 2MBI100N-060

2MBI100N-060 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. It is manufactured by Fuji Electric.

The module has a maximum collector-emitter voltage of 600V and a maximum collector current of 100A. It has a low on-state voltage drop and high switching speed, making it suitable for high-frequency switching applications.

The 2MBI100N-060 is designed with a 6th-generation IGBT chip and an advanced diode for improved performance and efficiency. It also features a low-inductance module design for reduced switching losses and a longer lifespan.

The module is equipped with a thermistor for temperature monitoring and protection against over-temperature conditions. It also has a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.

Overall, the 2MBI100N-060 is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment. It is also compact in size and can be easily mounted onto a heat sink for efficient cooling.

Westcode Semiconductor SW12CXC300 Rectifier Diode

SW12CXC300 is a rectifier diode designed for use in high-power applications such as power supplies, motor drives, and inverters.

Rectifier diodes are semiconductor devices that allow current to flow in only one direction, making them useful for converting AC power to DC power. They are commonly used in power electronics to convert and regulate voltage levels.

The SW12CXC300 rectifier diode has a maximum voltage rating of 300 volts and a current rating of 12 amps. It is designed for use in circuits that require high-speed switching and low forward voltage drop, which can help to improve efficiency and reduce heat generation.

The diode is housed in a compact and rugged package that is designed to withstand high temperatures and mechanical stress. It is also designed to be easy to install and replace, making it a convenient option for high-power applications.

Overall, the SW12CXC300 rectifier diode is a reliable and efficient option for converting and regulating voltage levels in high-power applications. It offers high-speed switching, low-forward voltage drop, and a compact and rugged package, making it a versatile and effective solution for a variety of industrial and commercial applications.

Semikron SKM400GB125D IGBT Distributor

SKM400GB125D is a high-power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high-power applications.

The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 400 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection.

The SKM400GB125D is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Overall, the SKM400GB125D IGBT module is a reliable and efficient solution for high-power applications, offering high voltage and high current capabilities, low switching losses, and built-in protection features for added safety and reliability. The increased maximum collector current rating compared to the SKM200GB125D allows for even higher power handling capabilities.

Semikron SKM100GB125DN IGBT Module

SKM100GB125DN is a high-power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high-power applications.

The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 100 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection.

The SKM100GB125DN is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Overall, the SKM100GB125DN IGBT module is a reliable and efficient solution for high-power applications, offering high voltage and high current capabilities, low switching losses, and built-in protection features for added safety and reliability.

Semikron SCR Silicon Controlled Rectifier SKDT115-16

SKDT115-16 is a Silicon Controlled Rectifier (SCR) which is a type of semiconductor device used for controlling high-power electrical circuits by switching them on and off.

The SCR is a three-terminal device with a gate, an anode, and a cathode. When a positive voltage is applied to the gate, it triggers the device, allowing current to flow from the anode to the cathode. The SCR remains in the conducting state until the current flowing through it drops below a certain threshold.

The SKDT115-16 is a high-power SCR with a maximum average forward current rating of 115 amps and a peak repetitive off-state voltage rating of 1600 volts. It is designed to handle high voltage and high current applications, such as motor control, power supplies, and lighting control.

The device is also designed to operate at high temperatures, with a maximum junction temperature of 150°C. This makes it suitable for use in harsh environments where high temperatures are common.

Overall, the SKDT115-16 SCR is a reliable and efficient device for controlling high-power circuits, especially those that require high current and high voltage capabilities. It is commonly used in industrial and commercial applications where reliability and durability are essential.

Mitsubishi Intelligent Power Modules PM600DSA060

PM600DSA060 is a power module designed for high-power and high-voltage applications. It is commonly used in industrial applications such as motor drives, power converters, and renewable energy systems where high efficiency and reliability are required.

This module is based on a three-phase insulated gate bipolar transistor (IGBT) bridge configuration, which provides high power and high efficiency. It has a maximum voltage rating of 600 volts and a maximum current rating of 600 amps. The PM600DSA060 is designed with pulse width modulation (PWM) control, which enables precise control of the output voltage and current.

The PM600DSA060 power module is available in various package styles, including the popular dual in-line module (DIM) package. It is also designed with built-in protection features, such as over-voltage protection, over-current protection, and short-circuit protection, which helps ensure safe and reliable operation.

Overall, the PM600DSA060 power module is a reliable and efficient component that is widely used in high-power electronics applications. Its high voltage and current ratings, high efficiency, precise control capabilities, and built-in protection features make it an ideal choice for demanding applications that require high reliability and performance.

Mitsubishi Intelligent Power Modules PM300DSA120

 PM300DSA120 is an AC motor controller, also known as an AC drive or variable frequency drive.

This controller is designed to regulate the speed and torque of three-phase AC induction motors in a wide range of industrial applications. It is typically used in industries such as HVAC, water and wastewater, oil and gas, and manufacturing.

The PM300DSA120 has a maximum power output of 120 kilowatts (kW) and is capable of controlling motors with a voltage range of 380 to 480 volts. It has advanced control algorithms that enable it to optimize motor performance, energy efficiency, and reliability.

The controller is equipped with various safety features, such as short-circuit protection, overcurrent protection, and overvoltage protection. It also has built-in communication capabilities, allowing it to integrate with various control systems and networks.

Overall, the PM300DSA120 AC motor controller is a reliable and efficient solution for controlling AC induction motors in a variety of industrial applications. It offers advanced control algorithms, safety features, and communication capabilities, making it a versatile and high-performance option for controlling motor speed and torque.

Toshiba IGBT Module MG50Q6ES40

MG50Q6ES40 is an Insulated Gate Bipolar Transistor (IGBT) module designed for use in high-power applications such as motor drives, power supplies, and renewable energy systems.

IGBTs are power transistors that combine the high-speed switching performance of MOSFETs with the low conduction losses of bipolar transistors. They are commonly used in high-power applications because they can handle high voltage and current levels with minimal losses.

The MG50Q6ES40 IGBT module has a maximum voltage rating of 600 volts and a current rating of 50 amps. It consists of six IGBTs in a three-phase bridge configuration, which allows for efficient and precise control of AC motors.

The module also has a built-in diode that provides freewheeling current during the switching process, reducing stress on the IGBTs and improving efficiency. It is designed for use with a heat sink or other cooling system to dissipate the heat generated during operation.

Overall, the MG50Q6ES40 IGBT module is a high-performance and reliable option for high-power applications that require efficient and fast switching of high voltage and current levels. It offers a three-phase bridge configuration and built-in diodes, making it a versatile and effective solution for controlling AC motors in a variety of industrial and commercial applications.

IXYS Distributors - MCD162 16IO1 Thyristor Diode Module

MCD162 16IO1 is a dual IGBT (Insulated Gate Bipolar Transistor) module, which is a type of semiconductor device used for switching and amplifying electrical power in high-power applications.

The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1600 volts and a maximum collector current rating of 162 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection.

The MCD162 16IO1 is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high-power handling capabilities.

Overall, the MCD162 16IO1 IGBT module is a reliable and efficient solution for high-power applications, offering high voltage and high current capabilities, low switching losses, and built-in protection features for added safety and reliability. The dual IGBT configuration allows for flexibility in circuit design and increased power handling capabilities.

Infineon FZ2400R17KF6C-B2 from IGBT Distributor

FZ2400R17KF6C-B2 is a product code for a power module manufactured by Infineon Technologies AG, a German semiconductor manufacturer.

The power module is designed for use in industrial applications, particularly in motor drives and other high-power applications that require reliable and efficient power conversion. It is a six-pack IGBT (Insulated Gate Bipolar Transistor) module that integrates six IGBT power switches and six diodes, all of which are insulated from the heat sink.

The FZ2400R17KF6C-B2 module has a maximum collector-emitter voltage of 1700V, a maximum collector current of 2400A, and a maximum power dissipation of 12.8kW. It operates at a frequency range of up to 8kHz and has a low inductance design for high switching speed.

The module has a compact and robust design with a weight of 2.2kg and dimensions of 160mm x 140mm x 30mm. It also has a built-in temperature sensor for monitoring and protection against overheating.

Overall, the FZ2400R17KF6C-B2 power module is a high-performance and reliable solution for industrial power applications that require efficient and precise power conversion.

Infineon Distributor - IGBT Module FZ1600R12KE3

 FZ1600R12KE3 is an Insulated Gate Bipolar Transistor (IGBT) module designed for use in high-power applications such as motor drives, power supplies, and renewable energy systems.

IGBTs are power transistors that combine the high-speed switching performance of MOSFETs with the low conduction losses of bipolar transistors. They are commonly used in high-power applications because they can handle high voltage and current levels with minimal losses.

The FZ1600R12KE3 IGBT module has a maximum voltage rating of 1200 volts and a current rating of 1600 amps. It consists of two IGBTs in a half-bridge configuration, which allows for bidirectional power flow and efficient switching.

The module also has a built-in diode that provides freewheeling current during the switching process, reducing stress on the IGBTs and improving efficiency. It is designed for use with a heat sink or other cooling system to dissipate the heat generated during operation.

Overall, the FZ1600R12KE3 IGBT module is a high-performance and reliable option for high-power applications that require efficient and fast switching of high voltage and current levels. It offers built-in diodes and a half-bridge configuration, making it a versatile and effective solution for a variety of industrial and commercial applications.

Infineon IGBT Module FF1400R12IP4

 FF1400R12IP4 is a product code for an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies AG, a German semiconductor manufacturer.

The module is designed for use in high-power applications such as motor drives, renewable energy systems, and industrial automation. It contains one IGBT power switch and one anti-parallel diode.

The FF1400R12IP4 module has a maximum collector-emitter voltage of 1200V, a maximum collector current of 1400A, and a maximum power dissipation of 1.9kW. It operates at a frequency range of up to 20kHz and has a low inductance design for high switching speed.

The module has a compact and robust design with a weight of 1.2kg and dimensions of 190mm x 140mm x 30mm. It also has a built-in temperature sensor for monitoring and protection against overheating.

Overall, the FF1400R12IP4 module is a high-performance and reliable solution for high-power applications that require efficient and precise power conversion. It is suitable for use in a wide range of industrial and commercial applications where high power density, fast switching, and high reliability are required.

Infineon Distributor - IGBT Module FF450R12KT4

FF450R12KT4 is a power module that contains a high-power IGBT (Insulated Gate Bipolar Transistor) and a diode. This module is designed for use in high-power applications, such as motor drives, renewable energy systems, and industrial power supplies.

The module is manufactured by Infineon Technologies and has the following specifications:

• Maximum collector-emitter voltage (Vce): 1,200V

• Maximum collector current (Ic): 450A

• Maximum power dissipation (Pd): 2,400W

• Maximum junction temperature (Tj): 150°C

• Low on-state voltage drop and high thermal cycling capability

• High surge capability and short-circuit withstand time

Overall, the FF450R12KT4 power module provides a robust and efficient solution for high-power switching applications that require fast and reliable operation. If you have any more specific questions or concerns regarding this module, please feel free to ask and I'll do my best to assist you further.