CM50DY-12H is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric.
The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.
The CM50DY-12H IGBT module has the following specifications:
Collector-Emitter Voltage (Vces): 1200V
Collector Current (Ic): 50A
Maximum Power Dissipation (Pd): 330W
Gate-Emitter Voltage (Vges): +/- 20V
Operating Temperature: -40°C to +150°C
This IGBT module is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high-power applications.
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