Infineon IGBT Module FZ1200R17KF6C_B2

FZ1200R17KF6C_B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies.

The "FZ1200R17KF6C" part of the name refers to the IGBT module itself, while "_B2" is likely a designation for a specific version or revision of the module.

The FZ1200R17KF6C_B2 IGBT module has the following specifications:

Collector-Emitter Voltage (Vces): 1700V

Collector Current (Ic): 1200A

Maximum Power Dissipation (Pd): 7500W

Gate-Emitter Voltage (Vges): +/- 20V

Operating Temperature: -40°C to +125°C

This IGBT module is designed for use in high-power applications, such as industrial motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications.

Infineon IGBT Module FZ400R17KE3

FZ400R17KE3 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high power switching applications. It is part of the IGBT4 series from Infineon Technologies.

The module has a maximum collector-emitter voltage of 1700V and a maximum collector current of 400A. It has a low on-state voltage drop and high switching speed, making it suitable for high-frequency switching applications.

The FZ400R17KE3 is designed with a 7th generation IGBT chip and an advanced diode for improved performance and efficiency. It also features a low-inductance module design for reduced switching losses and a longer lifespan.

The module is equipped with a thermistor for temperature monitoring and protection against over-temperature conditions. It also has a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.

Overall, the FZ400R17KE3 is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment.

Infineon Distributor - IGBT Module FZ1600R12KE3

 FZ1600R12KE3 is an Insulated Gate Bipolar Transistor (IGBT) module designed for use in high-power applications such as motor drives, power supplies, and renewable energy systems.

IGBTs are power transistors that combine the high-speed switching performance of MOSFETs with the low conduction losses of bipolar transistors. They are commonly used in high-power applications because they can handle high voltage and current levels with minimal losses.

The FZ1600R12KE3 IGBT module has a maximum voltage rating of 1200 volts and a current rating of 1600 amps. It consists of two IGBTs in a half-bridge configuration, which allows for bidirectional power flow and efficient switching.

The module also has a built-in diode that provides freewheeling current during the switching process, reducing stress on the IGBTs and improving efficiency. It is designed for use with a heat sink or other cooling system to dissipate the heat generated during operation.

Overall, the FZ1600R12KE3 IGBT module is a high-performance and reliable option for high-power applications that require efficient and fast switching of high voltage and current levels. It offers built-in diodes and a half-bridge configuration, making it a versatile and effective solution for a variety of industrial and commercial applications.