2MBI100N-060 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. It is manufactured by Fuji Electric.
The module has a maximum collector-emitter voltage of 600V and a maximum collector current of 100A. It has a low on-state voltage drop and high switching speed, making it suitable for high-frequency switching applications.
The 2MBI100N-060 is designed with a 6th-generation IGBT chip and an advanced diode for improved performance and efficiency. It also features a low-inductance module design for reduced switching losses and a longer lifespan.
The module is equipped with a thermistor for temperature monitoring and protection against over-temperature conditions. It also has a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.
Overall, the 2MBI100N-060 is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment. It is also compact in size and can be easily mounted onto a heat sink for efficient cooling.
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