FZ1200R17KF6C_B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies.
The "FZ1200R17KF6C" part of the name refers to the IGBT module itself, while "_B2" is likely a designation for a specific version or revision of the module.
The FZ1200R17KF6C_B2 IGBT module has the following specifications:
Collector-Emitter Voltage (Vces): 1700V
Collector Current (Ic): 1200A
Maximum Power Dissipation (Pd): 7500W
Gate-Emitter Voltage (Vges): +/- 20V
Operating Temperature: -40°C to +125°C
This IGBT module is designed for use in high-power applications, such as industrial motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications.
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