SKM100GB125DN is a high-power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high-power applications.
The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 100 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection.
The SKM100GB125DN is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.
Overall, the SKM100GB125DN IGBT module is a reliable and efficient solution for high-power applications, offering high voltage and high current capabilities, low switching losses, and built-in protection features for added safety and reliability.
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