Mitsubishi Electric IGBT Module CM50DY-12H

CM50DY-12H is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric.

The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.

The CM50DY-12H IGBT module has the following specifications:

Collector-Emitter Voltage (Vces): 1200V

Collector Current (Ic): 50A

Maximum Power Dissipation (Pd): 330W

Gate-Emitter Voltage (Vges): +/- 20V

Operating Temperature: -40°C to +150°C

This IGBT module is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high-power applications.

Mitsubishi IGBT Module CM50DY-12H Datasheet

CM50DY-12H Description

Medium Power Switching Use Insulated Type IGBT Module

Summary of Features

CM50DY-12H is a(n) 600V, 50A IGBT Modules. .

Target Applications

CM50DY-12H is used for AC Motor Control, Motion/Servo Control, UPS, Welding, Power Supplies, and Laser Power Supplies

Download CM50DY-12H Datasheet

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CM50DY-12H – Mitsubishi IGBT Module offered by USComponent.com

CM50DY-12H is a Medium Power Switching Use Insulated Type IGBT Module made by MITSUBISHI.

CM50DY-12H features include: ∗ Low Drive Power ∗ Low VCE(sat) ∗ Discrete Super-Fast Recovery Free-Wheel Diode ∗ High-Frequency Operation ∗ Isolated Baseplate for Easy Heat Sinking

CM50DY-12H can handle 50 amps, 600 voltage.

CM50DY-12H is used for AC Motor Control, Motion/Servo Control, UPS, and Welding Power Supplies

For more info, please visit https://www.mitsubishielectric.com/en/products-solutions/semiconductors-devices/index.page

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