Mitsubishi Electric IGBT Module CM50DY-12H

CM50DY-12H is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric.

The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.

The CM50DY-12H IGBT module has the following specifications:

Collector-Emitter Voltage (Vces): 1200V

Collector Current (Ic): 50A

Maximum Power Dissipation (Pd): 330W

Gate-Emitter Voltage (Vges): +/- 20V

Operating Temperature: -40°C to +150°C

This IGBT module is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high-power applications.

Infineon ECONODUAL IGBT Modules -Spanish

 Munich, Alemania - 18 de diciembre de 2019 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) presentó en marzo el nuevo chip IGBT7 para su conocida plataforma  Easy. Ahora está implementando el TRENCHSTOP ™ IGBT7 de última generación en la clasificación de la potencia media: en el paquete estándar de la industria EconoDUAL ™ 3. En esta tecnología de chip, el módulo de 1200 V proporciona una corriente nominal líder de 900 A que permite un 30 por ciento más de corriente de salida del inversor para el mismo tamaño  en comparación con la tecnología anterior. Si bien las mejoras específicas del chip y la carcasa del módulo apuntan directamente a aplicaciones de accionamiento industrial, también se puede utilizar muy bien en diseños para vehículos comerciales, de construcción y agrícolas (CAV), servoaccionamientos, así como inversores solares y UPS.

Basado en la nueva tecnología de zanjas de micro-patrones, el chip TRENCHSTOP IGBT7 funciona con pérdidas estáticas mucho más bajas en comparación con el IGBT4. Su voltaje de estado activado se reduce hasta en un 30 por ciento para la misma área de chip. Esto trae una reducción significativa de pérdidas en la aplicación, especialmente para los accionamientos industriales, que generalmente operan a frecuencias de conmutación moderadas. Además, se ha mejorado el comportamiento de oscilación y la capacidad de control del IGBT. Los módulos de potencia cuentan con una temperatura de unión de sobrecarga máxima permitida de 175 ° C.

Otra mejora se refiere al diodo de rueda libre (FWD) que también se ha optimizado para aplicaciones de accionamiento. La caída de voltaje directo del diodo de séptima generación controlado por emisor (EC7) ahora es 100 mV menor que la caída de voltaje directo del diodo EC4, con una tendencia a la oscilación reducida durante la desconexión del diodo, Sin duda alguna estamos ante una mejora considerable que será favorable en todos los ámbitos actuales.

IGBT with X-Ray Machine

A 48kW resonated converter involves four power modules, per module contains two parallel IGBTs and anti-parallel diodes. They are arranged in a half-bridge or push-pull configuration depending on the input, at 400Vac or 200Vac. At maximum power, the peak load current is 550A at 50 kHz or 275A per module for 48kW out. The generator is zero-voltage switched to create a continuous series resonant output current that's transformer-isolated stepped up and rectified to the desired output level.

The output voltage is regulated by a DSP based frequency-modulated controller, with dual-loop feedback on resonant current and load kV. For a range of output power, the system operates from 48 kHz up to 68 kHz with a resonant LC shunt across the load transformer. With fundamental series resonance at 48 kHz, the shunt resonates at 68 kHz. At low frequencies, the generator functions near resonance, with high power throughput. As frequency increases, the impedance rises the load being shorted by the resonant shunt. At 68 kHz, power is zero. Minimum size is important for the state of the art X-ray equipment. In this version of the converter, the four ZVS modules with their tightly packed IGBT and FRED chips require the only ¼ of the surface area formerly used. The integration of drivers, isolation, and ZVS logic circuitry further shrinks the footprint. Control signals have less distance to travel, which improves noise immunity and mechanical.

Main Features of the Global IGBT Market Research Report

This research report discusses knowledge about the IGBT market along with market opportunities, threats, and growth. It inspects current market divisions to predict developments and offers detailed industry segmentation based on product types, IGBT applications, and major geographic regions. The report also mentions the in-depth study of market share and its contribution. It highlights the main factors of well-applied marketing along with its different strategies and approaches used. The study also provides information on local, regional and international markets and developing segments. The dynamics of the market that keeps changing over time and the in-depth scrutiny of information sources are also cited. It conducts a deeper study of current and past market trends to predict future market growth in terms of volume and value. It also calculates the core business parameters, such as industrial advances and growth, delivers fundamental market figures in the form of charts, pie charts, graphs, and flowcharts. 

The company's main applications of bipolar transistor modules are also determined based on performance and achievements. The construction of sanctuaries in industries to improve their advantages in today's world is also discussed. It conducts a deeper study of current and past market trends to predict future market growth in terms of volume and value. It also calculates the core business parameters, such as industrial advances and growth, delivers fundamental market figures in the form of charts, pie charts, graphs, and flowcharts. The company's main applications of bipolar transistor modules are also determined based on performance and achievements. The construction of sanctuaries in industries to improve their advantages in today's world is also discussed. It conducts a deeper study of current and past market trends to predict future market growth in terms of volume and value. It also calculates the core business parameters, such as industrial advances and growth, delivers fundamental market figures in the form of charts, pie charts, graphs, and flowcharts. The company's main applications of bipolar transistor modules are also determined based on performance and achievements. 

The construction of sanctuaries in industries to improve their advantages in today's world is also discussed. such as industrial advances and growth, it delivers fundamental market figures in the form of charts, pie charts, graphs, and flowcharts. The company's main applications of bipolar transistor modules are also determined based on performance and achievements. The construction of sanctuaries in industries to improve their advantages in today's world is also discussed. such as industrial advances and growth, it delivers fundamental market figures in the form of charts, pie charts, graphs, and flowcharts. The company's main applications of bipolar transistor modules are also determined based on performance and achievements. The construction of sanctuaries in industries to improve their advantages in today's world is also discussed.

For Sale a New IGBT of 4.5 KV

IXYS Corporation, international energy, and semiconductor IC company announced today that its British subsidiary introduced a new addition to its family of 4.5 kV fast-recovery diodes (HP-sonic FRD) with a very high rate of current capacity change and current characteristics. soft recovery It has a nominal operating current of 460 amps and is optimized to be used in conjunction with the extensive range of IXYS UK press pack IGBTs. The new parts incorporate the most advanced assembly and process technology of IXYS UK, replacing older designs based on floating silicon. The new bonded matrix design offers a diode with improved thermal stability and very robust mechanical properties. Silicon is optimized with advanced processing to provide unmatched di / dt, the change in current capacity, more than 2 kA per microsecond while retaining a smooth recovery characteristic and low switching losses. 

The diodes are packed in 26mm thick ceramic packages that are fully hermetic with copper electrodes and are compatible to hold in series on the same battery as the IXYS UK high current press pack IGBT range. The 460 amp device has a 43 mm array and is packaged in a 38 mm electrode package with a total diameter of 60 mm. The designation of the part number for this new member of the IXYS family is E0460QC45E. The HP sonic FRD is optimized for use with the IXYS UK range in 4500-volt igbts; as the neutral and anti-parallel clamp diodes (for multilevel converters) with IXYS UKs the T0240NB45E, T0340VB45G and T0510VB45A transistor modules. This module is also suitable for use as a buffer diode with the largest IXYS UK press pack IGBTs, such as the T1600GB45G, the T1800GB45A, the T2400GB45E, and the recently launched T2960BB45E. Which makes this novelty a very complete addition to the IXYS family of modules.

Mitsubishi Eager to Dominate the Market

While many could see the energy market as mature, Mitsubishi aims for a 10% growth over the next five years to dominate the industry. Its module operation in Hungary, Vincotech, will be essential for this growth, says Toru Sanada, Executive Officer in charge of Semiconductor & Devices at Mitsubishi Electric at a conference in Tokyo. This follows the purchase of its joint venture Powerex with GE in the US. UU. To focus on automotive power devices. This is one of the four areas the business will focus on, says Sanada. These are appliances, automation of industrial factories and renewable energy, DC and automotive transmission, and will be driven by the manufacture of a larger volume of silicon and silicon carbide (SiC) power devices in larger wafers.