IXYS Corporation is a prominent maker of power
semiconductors, integrated circuits and RF powers. Their products are built for
power management, energy efficiency, and motor control applications. This
company is going to release a new 3600V Reverse Conducting IGBT (BiMOSFETs™).
We will get combined strengths of both MOSFETs and IGBTs by using this new
transistor. Featuring “free” intrinsic body diodes and current ratings from 45A
to 125A, these are perfect for high speed, high voltage, and high current power
conversion applications.
Power transistor makers will be able to get rid
of lower current rated devices and multiple series-parallel lower voltages if
they use these high voltage BiMOSFETs™. As a result, the number of power
components required will be reduced and their associated gate drive circuitry
will be simplified. These will lower the system costs and the reliability will
also be improved.
Besides, if required, credits to the favorable
heat coefficient of the on-state voltage and diode forward voltage, these
modules can be operated in collateral to meet even higher current necessities.
Moreover, in the course of turn-off transition, the inherent body diode
provides a path for the inductive load current, inhibiting high voltage
transients from imposing harm to the device.
“We at IXYS pioneered the concept of the
reverse conducting IGBT which we call the ‘BiMOSFET’ family since it combines
the best features of the power MOSFET and the BJT in one monolithic chip. It
evolved from our invention of the Reverse Blocking IGBT, as covered in our US
Patents No. 5,698,454, 6,091,086 and 6,936,908. We now extended the voltage rating
of these devices to enable simpler high voltage conversion circuits with
FET-like gate controls,” commented Dr. Nathan Zommer, CEO of IXYS Corporation,
and co-inventor of this technology.
Various types of power switching systems can be
benefitted by using the new 3600V BiMOSFETs™. Capacitor discharge circuits and
AC switches, uninterruptible power supplies, switched mode and resonant mode
power supplies, laser and X-ray generators are included to this list.
These inverse conducting IGBTs are obtainable
in the below international standard size packages: ISOPLUS i4-Pak™, ISOPLUS
i5-Pak™, and TO-247PLUS-HV. The first two packages supply an electrical
isolation of 4000V through the Direct Copper Bond (DCB) substrate technology.
IXYS Corporation manufactures and sells
technology-based products to enhance power conversion efficacy, generate solar
and wind power, and provide effective motor control for industrial
applications. IXYS provides a diverse product base that addresses worldwide
needs for power control, electronic displays, and RF power, electrical
efficiency, renewable energy, telecommunications, medical devices.
http://www.uscomponent.com had been selling IGBT power transistor modules
since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong
Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD,
Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires,
Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.