IXYS Corporation Discloses 3600V Reverse Conducting IGBTs (BiMOSFETs™)

IXYS Corporation is a prominent maker of power semiconductors, integrated circuits and RF powers. Their products are built for power management, energy efficiency, and motor control applications. This company is going to release a new 3600V Reverse Conducting IGBT (BiMOSFETs™). We will get combined strengths of both MOSFETs and IGBTs by using this new transistor. Featuring “free” intrinsic body diodes and current ratings from 45A to 125A, these are perfect for high speed, high voltage, and high current power conversion applications.

Power transistor makers will be able to get rid of lower current rated devices and multiple series-parallel lower voltages if they use these high voltage BiMOSFETs™. As a result, the number of power components required will be reduced and their associated gate drive circuitry will be simplified. These will lower the system costs and the reliability will also be improved.

Besides, if required, credits to the favorable heat coefficient of the on-state voltage and diode forward voltage, these modules can be operated in collateral to meet even higher current necessities. Moreover, in the course of turn-off transition, the inherent body diode provides a path for the inductive load current, inhibiting high voltage transients from imposing harm to the device.

“We at IXYS pioneered the concept of the reverse conducting IGBT which we call the ‘BiMOSFET’ family since it combines the best features of the power MOSFET and the BJT in one monolithic chip. It evolved from our invention of the Reverse Blocking IGBT, as covered in our US Patents No. 5,698,454, 6,091,086 and 6,936,908. We now extended the voltage rating of these devices to enable simpler high voltage conversion circuits with FET-like gate controls,” commented Dr. Nathan Zommer, CEO of IXYS Corporation, and co-inventor of this technology.

Various types of power switching systems can be benefitted by using the new 3600V BiMOSFETs™. Capacitor discharge circuits and AC switches, uninterruptible power supplies, switched mode and resonant mode power supplies, laser and X-ray generators are included to this list.

These inverse conducting IGBTs are obtainable in the below international standard size packages: ISOPLUS i4-Pak™, ISOPLUS i5-Pak™, and TO-247PLUS-HV. The first two packages supply an electrical isolation of 4000V through the Direct Copper Bond (DCB) substrate technology.

IXYS Corporation manufactures and sells technology-based products to enhance power conversion efficacy, generate solar and wind power, and provide effective motor control for industrial applications. IXYS provides a diverse product base that addresses worldwide needs for power control, electronic displays, and RF power, electrical efficiency, renewable energy, telecommunications, medical devices.

http://www.uscomponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

http://www.uscomponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.