IXYS UK Westcode Introduce It’s Greatest Ever Current Rating IGBT

IXYS UK Westcode has today introduced the maximal true current rating press-pack IGBT available that is set to break new ground in power handling capability of an individual device. The latest symmetric blocking device with an incessant DC rating of 2.8Kv has an unprecedented DC current of 6000A. The latest device has been aided by IXYS UK’s comprehensive expertise in making and understanding the principles of very big press-pack IGBTs with more than one parallel die. The recently developed 4.5Kv devices include vindicated SPT plus die technology and are built using 52 parallel-connected IGBT die, 10 more than the biggest established part with a current rating of 2400A at the same 4.5Kv blocking voltage. Every die is 14.3mm square with an active area of nearly one centimeter squared. The latest device encapsulated in completely sealed 26mm thick with a 132mm electrode diameter, bigger than the traditional 2400A device, but keep up the similar 170mm in-total diameter as the 42 die design; this provides an effective 25% more current rating in the same package.

The sturdy internal development is without bond with the single die straight away pressure contacted through metallic pressure plates to the outside copper electrodes. The outright bond free contact confirms maximum reliability and unparalleled thermal cycling properties, far exceeding those of a conventionally packaged plastic package module. In particular, the short circuit failure mode makes these devices the obvious choice for applications requiring a series operation, such is the case in utilities, HVDC and very large medium voltage drives. The unrivaled current rating can also reduce the number of parallel paths required in very high current applications in the multi megawatts range. Generally, these devices are well suited to harsh environments and where maintenance access is difficult such as off-shore marine and wind. The hermetic structure and high rupture resistance are properties which are particularly relevant in harsh environments where explosive failure and plasma leak are unacceptable, such as mining, gas and oil installation. The package design is based on IXYS UK’s proven technology, with the same conveniences of enhanced rupture capability, resisting more than ten times the short circuit energy of a conventional plastic packaged module device and the additional advantage that the device is virtually guaranteed to fail to a stable short circuit. These unique properties make the new device an ideal solution where high reliability, maximum power density, and predictable failure are important. To facilitate the application of this new higher-rated press-pack IGBT, IXYS UK Westcode has also launched a new complementary diode in its range of very high di/dt HP Sonic FRDs. This new diode is constructed using a new die bonding technology to maximize reliableness. Packaged in an 85mm electrode 26mm thick package the diode is pressure compatible with the press-pack IGBT so it can be mounted in the same series string for compact three-level inverter configurations.

Part number designations for this reverse conduction press-pack IGBTs is T2960BB45E & the compatible HP Sonic FRD is part number E3000TC45E. Typical applications for these devices include: utilities and HVDC applications such as, flexible AC transition systems, HVDC transition, Statcoms, VSC SVC etc; medium voltage AC drives for harsh environments and ultra-high power, such as mining, marine, and offshore g, gas, and oil installations; renewable energy for wind turbines, hydro generation, wave generation and solar; plus, any application where high power density and reliableness is necessary.

IXYS Corporation Discloses 3600V Reverse Conducting IGBTs (BiMOSFETs™)

IXYS Corporation is a prominent maker of power semiconductors, integrated circuits and RF powers. Their products are built for power management, energy efficiency, and motor control applications. This company is going to release a new 3600V Reverse Conducting IGBT (BiMOSFETs™). We will get combined strengths of both MOSFETs and IGBTs by using this new transistor. Featuring “free” intrinsic body diodes and current ratings from 45A to 125A, these are perfect for high speed, high voltage, and high current power conversion applications.

Power transistor makers will be able to get rid of lower current rated devices and multiple series-parallel lower voltages if they use these high voltage BiMOSFETs™. As a result, the number of power components required will be reduced and their associated gate drive circuitry will be simplified. These will lower the system costs and the reliability will also be improved.

Besides, if required, credits to the favorable heat coefficient of the on-state voltage and diode forward voltage, these modules can be operated in collateral to meet even higher current necessities. Moreover, in the course of turn-off transition, the inherent body diode provides a path for the inductive load current, inhibiting high voltage transients from imposing harm to the device.

“We at IXYS pioneered the concept of the reverse conducting IGBT which we call the ‘BiMOSFET’ family since it combines the best features of the power MOSFET and the BJT in one monolithic chip. It evolved from our invention of the Reverse Blocking IGBT, as covered in our US Patents No. 5,698,454, 6,091,086 and 6,936,908. We now extended the voltage rating of these devices to enable simpler high voltage conversion circuits with FET-like gate controls,” commented Dr. Nathan Zommer, CEO of IXYS Corporation, and co-inventor of this technology.

Various types of power switching systems can be benefitted by using the new 3600V BiMOSFETs™. Capacitor discharge circuits and AC switches, uninterruptible power supplies, switched mode and resonant mode power supplies, laser and X-ray generators are included to this list.

These inverse conducting IGBTs are obtainable in the below international standard size packages: ISOPLUS i4-Pak™, ISOPLUS i5-Pak™, and TO-247PLUS-HV. The first two packages supply an electrical isolation of 4000V through the Direct Copper Bond (DCB) substrate technology.

IXYS Corporation manufactures and sells technology-based products to enhance power conversion efficacy, generate solar and wind power, and provide effective motor control for industrial applications. IXYS provides a diverse product base that addresses worldwide needs for power control, electronic displays, and RF power, electrical efficiency, renewable energy, telecommunications, medical devices.

http://www.uscomponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

http://www.uscomponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

CONSOLIDACIÓN EN LA INDUSTRIA

Aunque el segmento de potencia discreta y módulo es un mercado maduro, es dominado hoy por Infineon, que tiene dos veces los ingresos del segundo fabricante de estos productos, dijo el Dr. Pierric Gueguen, gerente de unidad de negocios, Yole Développement. "En este mercado, esta posición no es adecuada a largo plazo. Esperamos que el mercado continúe consolidándose para obtener más activos para competir con el líder del mercado. La adquisición de IXYS es un ejemplo, así como la adquisición de Fairchild por ON Semiconductor el año pasado ". "Con la adquisición de IXYS, Littelfuse confirma su presencia y posición como proveedor de IGBT", agregó Gueguen. "Littelfuse se beneficiará de los diseños de dispositivos IXYS y conocimientos de empaquetado de módulos, así como una sólida cartera de patentes para acelerar su desarrollo tecnológico y sus ingresos". Antes de la adquisición de IXYS, Littelfuse adquirió la línea de productos IGBT de ON Semiconductor en septiembre de 2016. El negocio generó menos de $ 25 millones en ingresos en el año fiscal de 2015. La mayoría de los jugadores de IGBT ofrecen soluciones discretas y de módulos en el rango de voltaje medio de 600V a 1300V, que representa más del 60 por ciento del mercado mundial de IGBT, dijo Yole.

Power Management Applications Get Latest 1700V and 2500V XPT™ IGBTs Launched by IXYS

IXYSCorporation, a leading maker of power semiconductors and ICs for power management, energy efficiency and motor control applications announced the 1700V and 2500V XPT™ IGBTs for power management applications. The current ratings of the new devices range from 26A to 178A and these are perfect for high-voltage (“HV”), high-speed power conversion applications. Devices which are packed together with anti-parallel fast diodes are also available.

IXYS has an enriched history of presenting cutting edge, state-of-the-art IGBTs and had introduced the HV IGBT outline and applications in power management particularly in the transportation, medical and manufacturing markets. Designed by utilizing the patented IXYS Extreme-Light Punch-Through (XPT™) technology and the leading edge IGBT processes, these latest devices characteristics such as lessened thermal resistance, little tail current, little energy loss, and fast switching capacity. Also, the positive temperature coefficient of their on-state voltage gets credit, the latest high-voltage IGBTs can be used in parallel, which provides cost-efficient solutions compared to series-connected, lower-voltage device ones. This therefore results in diminishing in the related gate drive circuitry, simplicity in design, and advancement in the reliableness of the overall system. The non-compulsory co-packed fast recovery diodes have less reverse recovery time and are designed to generate smooth switching waveforms and notably lower electromagnetic interference (EMI).

A significant number of high-voltage (“HV”), high-speed power management applications that can get advantage from using these IGBTs. Among them are HV converters, inverters, power pulse circuits, laser and X-ray generators, HV power supplies, HV test equipment, capacitor discharge circuits, medical switching applications, HV circuit protection, and HV AC switches. The new XPT™ IGBTs are found in the following international standard size packages: SOT-227, TO-247, PLUS247, ISOPLUS i5-Pak™, TO-247HV, TO-247PLUS-HV, and TO-268HV. The latter three have increased creepage distances between leads, making them sturdy against provoked voltages. Some example part numbers include IXYH24N170C, IXYN30N170CV1, IXYH30N170C, and IXYH25N250CHV, with collector current ratings of 58A, 88A, 108A, and 95A, respectively.

IXYS UK Westcode Introduce It’s Greatest Ever Current Rating IGBT

IXYS UK Westcode have today introduced the maximal true current rating press-pack IGBT available that is set to break new ground in power handling capability of an individual device. The latest symmetric blocking device with a incessant DC rating of 2.8Kv has a unprecedented DC current of 6000A. The latest device has been aided by IXYS UK’s comprehensive expertise in making and understanding the principles of very big press-pack IGBTs with more than one parallel die. The recently developed 4.5Kv devices include vindicated SPT plus die technology and are built using 52 parallel connected IGBT die, 10 more than the biggest established part with a current rating of 2400A at the same 4.5Kv blocking voltage. Every die is 14.3mm square with an active area of nearly one centimetre squared. The latest device encapsulated in completely sealed 26mm thick with a 132mm electrode diameter, bigger than the traditional 2400A device, but keep up the similar 170mm in-total diameter as the 42 die design; this provides an effective 25% more current rating in the same package.

The sturdy internal development is without bond with the single die straight away pressure contacted through metallic pressure plates to the outside copper electrodes. The outright bond free contact confirms maximum reliability and unparalleled thermal cycling properties, far exceeding those of a conventionally packaged plastic package module. In particular, the short circuit failure mode makes these devices the obvious choice for applications requiring series operation, such is the case in utilities, HVDC and very large medium voltage drives. The unrivalled current rating can also reduce the number of parallel paths required in very high current applications in the multi megawatts range. Generally, these devices are well suited to harsh environments and where maintenance access is difficult such as off-shore marine and wind. The hermetic structure and high rupture resistance are properties which are particularly relevant in harsh environments where explosive failure and plasma leak are unacceptable, such as mining, gas and oil instillation. The package design is based on IXYS UK’s proven technology, with the same conveniences of enhanced rupture capability, resisting more than ten times the short circuit energy of a conventional plastic packaged module device and the additional advantage that the device is virtually guaranteed to fail to a stable short circuit. These unique properties make the new device an ideal solution where high reliability, maximum power density and predictable failure are important. To facilitate the application of this new higher rated press-pack IGBT, IXYS UK Westcode has also launched a new complementary diode in its range of very high di/dt HP Sonic FRDs. This new diode is constructed using a new die bonding technology to maximize reliableness.

Packaged in an 85mm electrode 26mm thick package the diode is pressure compatible with the press-pack IGBT so it can be mounted in the same series string for compact three level inverter configurations. Part number designations for this reverse conduction press-pack IGBTs is T2960BB45E & the compatible HP Sonic FRD is part number E3000TC45E. Typical applications for these devices include: utilities and HVDC applications such as, flexible AC transition systems, HVDC transition, Statcoms, VSC SVC etc; medium voltage AC drives for harsh environments and ultra-high power, such as mining, marine and off shore g, gas and oil installations; renewable energy for wind turbines, hydro generation, wave generation and solar; plus, any application where high power density and reliableness is necessary.