Today we will know about FZ1200R12KL4C, a
1200A/1200V IHM 130mm single switch IGBT power transistor module with IGBT2 low
loss and Emitter Controlled Diode. The weight of this device is 8.82 lbs. It is
the perfect choice for your industry applications such as Motor Control and
Drives, Solar Energy Systems, Wind Energy Systems, Uninterruptable Power
Supplies, and etc. It is manufactured by famous German manufacturer Infineon
Technologies who are specialist in making semiconductors and system solutions
by targeting the primary needs of our modern society. Infineon was known as
Eupec previously in the world of technology. High reliableness and solid module
construction are the features for which FZ1200R12KL4C is exceptional. This
module is recognized by UL too. We will be eligible to get some extra
advantages if we use this transistor in our industry applications. High power
density can be achieved for compact inverter designs by using this.
Standardized housing is another attribute which makes FZ1200R12KL4C unique. We
are going to have a discussion about the implementation of FZ1200R12KL4C in
solar inverters. Solar power has a large potential to provide the electricity
needs of the world’s burgeoning population.
However, in 2008 solar-power supplied less than
0.02% of the world's total energy supply. A solar inverter converts variable
direct current (DC) output of a photovoltaic (PV) solar array panel to AC
voltage. The energy produced from solar panels is used to power household
appliances directly, charge batteries or feed electricity directly back to the
grid in return for credit against future power bills. All of these applications
need AC voltage. The DC voltage produced by the solar array must be converted
into a desired well regulated AC power by using an IGBT based inverter.
FZ1200R12KL4C provides advantages in solar inverter applications compared to
other types of power devices. It delivers low conduction and switching losses
resulting in high inverter efficiency. Benefits like high-current-carrying capability,
gate control using voltage instead of current and the ability to match the
co-pack diode are found when FZ1200R12KL4C is used as the power device in solar
inverters.
FZ1200R12KL4C has some major advantages over
MOSFETs and bipolar transistors. First, it has very low on-state voltage drops
because of the conductivity modulation, in addition to superior on-state
current density. These factors allow manufacturers to fabricate devices with
smaller chip size and at lower cost. Second, these boast low driving power and
simple driving circuits due to the input MOS gate structure. It is simpler to
control compared to current controlled devices such as bipolar transistors.
Third, FZ1200R12KL4C has fantastic forward and reverse blocking capabilities.
These characteristics encourage designers to select this IGBT module for solar
inverter applications. Young & New Century LLC is located at Houston in
Texas, United States. Our official website is http://www.uscomponent.com. We have been selling IGBT power
transistor modules like FZ1200R12KL4C for the last fourteen years. We sell
original & new parts only. You can trust us in terms of quality because we
always try to supply the authentic parts. All of our parts are backed up with
30 days warranty. Please take a look at our website for stock check or
technical support.
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