1200V IGBT Innovation Platform

Global Rectifier, IR presented another era Insulated Gate Bipolar Transistor (IGBT) innovation stage. The Generation 8 (Gen8) 1200V IGBT stage uses IR's most recent era trench door field stop innovation to offer best-in-class execution for mechanical and vitality sparing applications.

The novel Gen8 outline permits best-in-class Vce (on) to decrease power dispersal and expansion power thickness, and conveys unrivaled vigor.

The new innovation offers gentler turn-off attributes perfect for engine drive applications, minimizing dv/dt to decrease EMI, and over-voltage, expanding unwavering quality and toughness. A tight dispersion of parameters offers fantastic current sharing while paralleling different IGBTs in high-current force modules. The slight wafer innovation conveys enhanced warm resistance and most extreme intersection temperature up to 175°C.

R's Gen8 IGBT stage targets mechanical applications. With best-in-class Vce (on), heartiness and incredible exchanging qualities, this IGBT stage has been particularly custom-made to accomplish the requesting difficulties of the modern business sector.

The Gen8 1200V IGBT stage is being examined to major OEM and ODM accomplices as of now.