Hi-Rel 1.2kV SiC Module Announced by Wolfspeed

 Wolfspeed has expanded the use of silicon carbide technology for outdoor systems in transportation and renewable energy applications with the introduction of a new high-reliability 1.2kV SiC power module. Announced at PCIM 2017, this industry-first module successfully passes stringent environmental qualification tests for simultaneous high humidity, high temperature, and high voltage operation.

This new reliability benchmark enables system designers to confidently deploy SiC power modules in outdoor applications such as transportation, wind energy, solar power, and other renewable energy systems. These environments have traditionally posed challenges for safe and stable device operation due to extreme conditions. Passing these tests demonstrates the robustness and maturity of silicon carbide technology for demanding real-world applications.

The all-SiC power module is rated at 300A with a blocking voltage of 1.2kV. It was tested under severe environmental conditions, including 85 percent relative humidity and an ambient temperature of 85 degrees Celsius, while biased at 80 percent of its rated voltage, equivalent to 960V. Successful operation under these conditions provides strong confidence in the long-term reliability and durability of SiC power devices.

Performance under biased stress testing further validates the overall robustness of silicon carbide technology across a wide range of applications. This achievement highlights the suitability of SiC power modules for next-generation power conversion systems that must operate efficiently and reliably in harsh environments.

According to Alstom, silicon carbide components enable the design of compact, lightweight, and low-loss power converters required for railway transportation applications. Achieving the benchmark for high temperature and high humidity operation under high bias voltage represents a critical milestone in the adoption of SiC devices for demanding transportation markets.

The module is powered by new Wolfspeed silicon carbide MOSFETs, part number CPM2-1200-0025A, along with Gen5 Schottky diodes. Both components have passed the same harsh environmental qualification tests at the die level. The module delivers a low on-resistance of just 4.2 milliohms and achieves more than five times lower switching losses compared to similarly rated, latest-generation IGBT modules.

Advanced module construction techniques are employed, including high thermal conductivity aluminum nitride substrates and optimized assembly methods. These design features ensure compliance with industry requirements for thermal cycling and power cycling while supporting high efficiency and high power density operation.

Wolfspeed stated that this 1200V SiC module reflects its commitment to enabling future power electronics markets by meeting anticipated system requirements for 2020 and beyond. The module is available under part number WAS300M12BM2 and can be driven using existing Wolfspeed gate drivers designed for 62mm power modules.

PM800HSA120 from USComponent.com

 Buy PM800HSA120 and other power semiconductors for as low as $1 at https://www.uscomponent.com/buy/MITSUBISHI/PM800HSA120.

In the realm of semiconductor modules, the PM800HSA120 stands out as a powerhouse, particularly suited for high-speed applications. With its advanced features and capabilities, it has become a cornerstone in various industries requiring reliable and efficient performance. This article delves into the intricacies of the PM800HSA120, exploring its specifications, applications, and the impact it has on technological advancements. 

Specifications:

The PM800HSA120 is a silicon carbide (SiC) power module manufactured by Mitsubishi Electric, renowned for its quality and innovation in the semiconductor industry. It boasts impressive specifications designed to meet the demands of high-speed applications: 

1. Voltage and Current Ratings: The module operates at a voltage rating of 1200 volts, making it suitable for high-power applications. Additionally, it can handle currents up to 800 amps, providing ample power for various industrial and commercial needs. 

2. SiC Technology: Unlike traditional silicon-based modules, the PM800HSA120 utilizes silicon carbide technology, offering numerous advantages such as higher efficiency, lower switching losses, and enhanced thermal conductivity. This enables improved performance and reliability, even in demanding operating conditions. 

3. Thermal Management: To ensure optimal performance and longevity, the PM800HSA120 features advanced thermal management capabilities. It incorporates efficient heat dissipation mechanisms, including integrated heat sinks and thermal interfaces, to effectively dissipate heat generated during operation. 

Applications: 

The PM800HSA120 finds widespread use across diverse industries due to its versatility and robust performance. 

Some notable applications include: 

1. Renewable Energy: 

In solar inverters and wind turbine systems, the PM800HSA120 facilitates efficient power conversion, maximizing energy output and contributing to advancing renewable energy technologies. 

2. Electric Vehicles (EVs):

As the automotive industry shifts towards electrification, the PM800HSA120 plays a vital role in electric vehicle powertrains, enabling high-performance motor control and battery management systems. 

3. Industrial Automation: 

From motor drives and robotics to power supplies and UPS systems, the PM800HSA120 enhances the efficiency and reliability of industrial automation equipment, driving productivity and innovation in manufacturing processes. 

4. High-Speed Rail and Transportation: 

In railway traction systems and electric propulsion systems for ships and aircraft, the PM800HSA120 delivers the power and efficiency required for high-speed transportation solutions, contributing to sustainability and reducing environmental impact. 

Impact on Technological Advancements: 

The PM800HSA120 represents a significant advancement in semiconductor technology, paving the way for innovation and progress in various fields. Its superior performance, reliability, and efficiency contribute to:

 

1. Enhanced Energy Efficiency: By minimizing power losses and improving conversion efficiency, the PM800HSA120 supports energy-saving initiatives and promotes sustainability across industries. 

2. Increased Reliability: With its robust design and advanced features, the PM800HSA120 ensures reliable operation even in harsh environments, reducing downtime and maintenance costs for critical systems. 

3. Accelerated Technological Innovation: By providing engineers and researchers with a powerful and versatile semiconductor solution, the PM800HSA120 fosters innovation in electric mobility, renewable energy, and industrial automation, driving technological advancements and economic growth. 

Conclusion: The PM800HSA120 stands as a testament to the relentless pursuit of excellence in semiconductor technology. Its impressive specifications, diverse applications, and positive impact on technological advancements underscore its importance in today's interconnected world. As industries continue to evolve and embrace new challenges, the PM800HSA120 remains at the forefront, empowering innovation and shaping the future of high-speed applications.

Silicon Carbide MOSFET GA100TS60SQ by GeneSiC Semiconductor Inc.

GA100TS60SQ is a silicon carbide (SiC) power module designed for high-power switching applications. It is manufactured by GeneSiC Semiconductor Inc. and consists of two SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and two anti-parallel diodes in a single module.

This power module has a maximum collector current of 100A and a maximum collector-emitter voltage of 600V. It features a low on-resistance, fast switching speed, and high thermal conductivity, making it suitable for use in high-frequency, high-temperature, and high-power applications such as electric vehicles, renewable energy systems, and industrial drives.

The GA100TS60SQ is designed for high reliability and efficiency, and it features advanced protection and monitoring features such as over-current protection, over-temperature protection, and under-voltage lockout. Its compact package design simplifies circuit design and assembly and provides high power density and thermal performance.

In summary, the GA100TS60SQ power module is an efficient and reliable solution for high-power switching applications that require fast switching speed, low on-resistance, and high-temperature performance. Its advanced features and high-power capability make it suitable for a wide range of industrial and automotive applications.

Hi-rel 1.2kV SiC Module Announced By Wolfspeed

Wolfspeed introduces SiC technology to outdoor systems in transportation and renewable energy. Wolfspeed has stretched its SiC power devices with the launch at PCIM 2017 of the industry’s inaugural power module that overcomes the tough environment qualification test for concurrent high-humidity, high-temperature and high-voltage situations. This reliableness benchmark allows system designers to utilize this device in outdoor applications such as transportation, wind, solar and other renewables where ultimate environmental conditions have traditionally challenged secure device operation. The latest all-SiC module, rated for 300 A and 1.2 kV blocking, was strained in an 85% relative humidity, 85 degrees celsius ambient while biased at 80% of rated voltage (960V). 

Accomplishment in tough situation testing under bias provides further confidence in the overall robustness of SiC device technology for all applications. “SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.” Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the tough environment test at the die level, the latest module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. 

Module construction uses high thermal conductivity aluminum nitride substrates and optimised assembly methods to meet industry thermal and power cycling requirements. “This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed’s chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.” Available under part number WAS300M12BM2, the latest module can be driven using existing Wolfspeed gate drivers for 62mm modules.

Hi-rel 1.2kV SiC Module Announced by Wolfspeed

Wolfspeed introduces SiC technology to outdoor systems in transportation and renewable energy. Wolfspeed has stretched its SiC power devices with the launch at PCIM 2017 of the industry’s inaugural power module that overcomes the tough environment qualification test for concurrent high-humidity, high-temperature and high-voltage situations. This reliableness benchmark allows system designers to utilize this device in outdoor applications such as transportation, wind, solar and other renewables where ultimate environmental conditions have traditionally challenged secure device operation. The latest all-SiC module, rated for 300 A and 1.2 kV blocking, was strained in an 85% relative humidity, 85 degree celsius ambient while biased at 80% of rated voltage (960V).

Accomplishment in tough situation testing under bias provides further confidence in the overall robustness of SiC device technology for all applications. “SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.” Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the tough environment test at the die level, the latest module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. Module construction uses high thermal conductivity aluminum nitride substrates and optimised assembly methods to meet industry thermal and power cycling requirements. “This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed’s chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.”

Available under part number WAS300M12BM2, the latest module can be driven using existing Wolfspeed gate drivers for 62mm modules.