The on-state behavior is
something more critical when it comes about paralleling igbts. Some devices
such as the P700 sixpack suggests a relatively variation in IGBT
collector-emitter and diode forward voltage. For the IGBT, the
collector-emitter saturation voltage at 25 °C is given as 1.7 V typical and
2.25 V maximum. No value is provided for the minimum voltage. Keeping this in
mind, the paralleling of chips cannot be recommended, since the current sharing
among the individual IGBTs cannot be ensured. The situation is even worse for
the diodes in parallel systems but it can be avoided depending it its final
use.
However based in the present times, the actual spread of the devices within one power module is lower than the parallel system users. This is due to the fact that they are picked from locations either exactly next or very close to each other on the same wafer, and will as is stated, feature similar electrical characteristics.
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