IGBT with Power Transmission Systems

In a typical HVDC power transmission system, the power is transmitted at very high voltages (above 100-kV) in order to reduce the current on the cables. Large currents in cables require more copper which adds to the cost and weight. Since power semiconductor devices are unable to withstand such high voltages, it is necessary to connect many devices in series to satisfy the system requirements. In addition, for higher power levels, many devices may have to be connected in parallel as well. The series and parallel combination of power devices comprise an HVDC valve. The most common configuration for modern overhead HVDC transmission lines is bipolar because it provides two independent DC circuits each capable of operating at half capacity. 

Two basic converters topologies are used in modern HVDC transmission systems: conventional line-commutated, current-source converters (CSC) based upon thyristor-valves and self-commutated, voltage-sourced converters (VSC) based upon IGBT-valves. Each valve consists of a large number of series-connected thyristors or IGBTs to sustain the desired DC voltage rating. In the case of current source converters with thyristor valves, a Graetz bridge configuration is used allowing six commutations or switching operations per period. Self-commutated, voltage-source converters using IGBTs are preferred because they allow independent rapid control of both active and reactive power. Reactive power can also be controlled at each end of the transmission line providing total flexibility in network design. The self-commutated, voltage source converters can be constructed using IGBTs without the snubbers required for GTOs. 

The rate of rising of the current in the IGBT can be controlled by tailoring the gate drive voltage waveform without any ancillary components. This allows controlling the reverse recovery of the anti-parallel rectifiers without the snubbers. The reduced passive components in the IGBT-based VSC inverters reduce system costs.

Infineon Presents: 3-Inch EconoPIM 150A IGBT Modules

Infineon expanded the product portfolio of EconoPIM 3-inch IGBT modules. The nominal current of the module is thereby increased from 100A to 150A. Typical applications for power modules for motor control units in elevators, escalators, fans or pumps. The modules include a three-phase rectifier, a braking chopper, a three-phase inverter and a thermistor (NTC) for temperature measurement. At a blocking voltage of 1200V, the new EconoPIM 3 reaches a maximum rated current of 150A. The housing is equipped with a base plate and corresponds in dimension to the industry standard. It can be incorporated into existing designs. When used in the EconoPIM 3 units it allows according to the supplier in the same size up to 30 percent more output power. 

The modules use the IGBT4 chip with TrenchStop technology, robustness, and reliability. Availability: The EconoPIM module with 1200V / 150A is available with solder pins or press-fit bolts. This applies to all variants with the IGBT4 chip in TrenchStop technology. In addition, optional modules with thermal interface material (TIM) are available. Power modules are available in volume production, samples are available. This applies to all variants with the IGBT4 chip in TrenchStop technology. In addition, optional modules with thermal interface material (TIM) are available. Power modules are available in volume production, samples are available. This applies to all variants with the IGBT4 chip in TrenchStop technology. In addition, optional modules with thermal interface material (TIM) are available. Power modules are available in volume production, samples are available.

Usage of IGBT in UPS Inverter

In the highly emulative UPS market, every renowned UPS manufacturer is trying to ameliorate their UPS performance and reliability steadily. This increasing demand will only be satisfied if the components used can keep pace. IGBTs are considered as one of the best choices for medium and high-power UPS because of their simple control, great switching characteristics and excellent reliability. Especially in terms of efficiency, acoustic noise, size, and weight, they remarkably uplift UPS performance. In high power UPS where the inverter operates between 2 and 4 kHz, the main benefit of the IGBT is a simplification of transistor control (increased reliability). Its efficiency is equal to that of bipolar transistors. In medium power UPS often installed in computer rooms, the acoustic noise criterion makes it necessary to remove the 50 or 60 Hz transformer and to add an inverter operating at a frequency of 16 kHz, thus making the IGBT absolutely indispensable both due to the lessening in number of components required to control it and due to the gain in weight and in total dimensions. 

Production of new products calls for a prudent, meticulous choice of new components. We are frequently informed about the announcements of new elements as the IGBT is still in the growth stage. Present studies should not be questioned as authorized approval of a power semiconductor is long and expensive.

IGBT with Induction Rice Cooker

Rice is the first & foremost food for billions of people around the world, especially in Asian countries such as China, India, and Japan, with mass populations. According to Asian Rice Foundation, “Rice is arguably the world’s most important food. It is the second most widely cultivated cereal in the world, after wheat, and is a staple food of over half the world’s population. Rice can be cooked in a variety of ways, including boiling, baking, roasting, frying, and pressure-cooking. Cooking rice in an automatic rice cooker is becoming very popular, as it ensures consistent results and cooking instruction is much simpler to follow”. Many Asian companies have developed rice cookers based upon the induction heating principle. 

The induction heating can be accomplished by using an induction cooking plate or preferably by using an induction rice cooker. Two types of circuit topologies have been explored for the induction rice cooker. The first one is the half-bridge series resonant converter and another is the quasi-resonant converter. The series resonant converter has the advantages of stable switching, low cost, and streamline design. The quasi-resonant converter has the advantage of a smaller design with a reduced heat sink. The quasi-resonant converter is more widely used. Due to the large market for these appliances, some semiconductor companies have developed IGBT products optimized for this market for the quasi-resonant converter topology. IGBTs feature a robust and cost-effective Field Stop (FS) Trench construction and provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. IGBTs are well suited for this type of resonant or soft switching applications.

Use of IGBTs in Medical Ultrasonography Machines

Heart specialists, neonatologists, obstetricians, urologists, gastroenterologists use ultrasound-based imaging extensively for the diagnosis and treatment of patients. Sound waves above the audible range of humans are called ultrasound. The choice of the ultrasound frequency for diagnostic purposes is a trade-off between image resolution and special depth. Due to the longer wavelength of the sound wave, lower ultrasound frequencies produce images with less resolution, although these penetrate deeper into the body. Normal ultrasound frequencies range from 2 to 18 MHz. A hand-held probe is used to perform Sonography that is placed and moved over the patient while viewing the image in real-time. A piezoelectric transducer with a phased array is contained in the probe, which allows altering the direction and depth of the sound wave. 

The sound wave is reverberated from the organs inside the body at different intensities depending upon their composition and the time taken for the echo to return to the transducer specifies the distance traveled by the wave. For diagnostic purposes, this information is converted to an image. The application of a high voltage pulse to the piezoelectric medium produces the sound wave from the ultrasound transducer. The pulse must have an amplitude of over 1000 volts with a current of 20-50 amperes. Because of the short duration of the pulse, generally 0.5 microseconds, with a less operating frequency of 200-Hz, the best approach is to slowly charge a capacitor through a diode when the IGBT is off and then turn-on the IGBT for the short pulse duration to discharge the capacitor through the transducer.

Benefits of IGBT Switching Speed in Elevators

PWM VFD operations need great switching speed which can be attained by using IGBTs (insulated gate bipolar transistor). Switching on and off several thousand times a second is one of the main attributes of IGBTs. A VFD IGBT can turn on in less than 400 nanoseconds and off in about 500 nanoseconds. It is composed of a gate, collector and an emitter. When a positive voltage (typically +15 VDC) is applied to the gate the IGBT will turn on. This is the same as closing a switch. The current will flow between the collector and emitter. A VFD IGBT is turned off by removing the positive voltage from the gate. During the off state, the IGBT gate voltage is generally held at a small negative voltage (-15 VDC) to restrain the device from turning on.

IGBTs are used as power devices by all recent VFDs. These devices make it possible to reduce annoying audible noise by using switching frequencies beyond the audible range. Unfortunately, VFDs using IGBTs, present a high potential for generating RFI - Radio Frequency Interference. Fast switching in these devices generates sharp-edged waveforms with high-frequency components that generate more RFI. The most probable complaint is interference with AM band radio 500-1600 kHz. However, sensitive computers, medical equipment, and other interference-sensitive devices sharing the same power bus could experience significant interference. In extreme conditions, the VFD itself can experience electrical noise interference. If elevator machine room equipment is not properly laid out and correctly wired, the electrical noise propagated by the elevator VFD system can intervene with the elevator controller. The switching speed, simple control, and overload withstand of the IGBT currently make it a component of considerable interest.

IGBT Induction Heating Coil in Photocopiers and Printers

The fixing system for the toner in photocopiers, laser printers, facsimile machines, data recorders, and scanners needs a transfer of toner from the rolling drum to the printing paper with heat and pressure. Radiant heating with halogen lamps was used for this process in the past. However, nearly 90 percent of the printing energy is consumed by this operation. The efficiency can be improved by using the induction heating approach leading to a reduction in the size of the printing devices. 

The induction heating coil is installed concentrically inside the fixing roller. The high-frequency inverter required to feed the inductive energy into the heating coil is built using IGBTs. The actual high efficiency of more than 94 percent of the series resonant ZCS-PDM high-frequency inverter for IH roller in copy and printing machines has been observed for all the output AC power regulation ranges from 50 to 1200 W.

IGBT Inverters in UPS

The most effective way to save electronic equipment from power problems is by using UPS. UPS units have different sizes, from a little desktop system that shields an individual PC to massive UPS that can supply power to a whole building. Nearly every organization has a power safeguard necessity, ranging from companies with computer UPS provides power to your equipment in the case of an entire power collapse, giving you the opportunity to save data and close files. At a more commencing level, the UPS conditions and filters networks to hospitals, airports, oil rigs and anywhere where uninterrupted power is a must. 

Today maximum industries are using UPSs to save their core business against mains failures, mains supply fluctuations, power surges, and other troubles in the electrical supply. Spontaneous control, outstanding switching features and excellent reliability make IGBTs the perfect option today for medium and high-power UPS. These modules greatly enhance UPS performance, specifically in terms of proficiency, acoustic noise, shaped and weight. In high capacity UPS where the inverter functions between 2 and 4 kHz, the prime benefit of the IGBT is a simplification of transistor control (better reliableness). IGBT is comparable to the bipolar transistors in terms of efficiency.

IGBT Transistors in CNC Plasma Cutting Machines

Plasma cutting involves cutting a material using a plasma torch. It is commonly used to cut steel and other metals but can be used on a variety of materials. In this process, gas (such as compressed air) is blown at high speed out of a nozzle; at the same time, an electrical arc is formed through that gas from the nozzle to the surface being cut, turning some of that gas to plasma. The plasma is sufficiently hot to melt the material being cut and moves sufficiently fast to blow molten metal away from the cut. 

The transistors used in plasma cutting were initially MOSFETs, but are now increasingly using IGBTs. With paralleled MOSFETs, if one of the transistors activates prematurely it can lead to a cascading failure of one-quarter of the inverter. A later invention, IGBTs, is not as subject to this failure mode. IGBTs can be generally found in high current machines where it is not possible to parallel sufficient MOSFET transistors.

KV CEI Applied to IGBT Modules for Better Performance

KV-CEI isolates electronic systems from air pollutants, dust, chemicals and evaporation of water vapor. It is an enclosure that works by closing the cooling circuit system of the outside atmosphere (where evaporation escapes) with a breathing chamber. The outside air inflates and deflates the bladder when the fluid levels inside the isolation tank expand and contract from the temperature changes of the system liquid. 

A low-pressure relief valve helps prevent overpressurization of the system in case unforeseen air is trapped inside the fluid lines. An open shut-off valve that draws air allows the system to drain and fill with adequate fluid levels during a normal preventive maintenance cycle. By isolating the internal volume of the tank from the existing external atmosphere, the system prevents the evaporation of water and the entry of contaminants into the air in the water-glycol solution. 

A check valve provides overpressure protection and a visual level indicator allows local confirmation of the coolant level. In addition, a port allows you to add an optional floating standard liquid level switch for remote low-level refrigerant indication. "The design of KV-CEI is versatile enough to allow the addition of low-level liquid sensors when necessary in a turbine," Mosher says that custom designs are also possible. "We can also design many mounting options to fit a particular mounting pattern." The objective is to keep wind turbines generating energy even in extreme temperatures, without adding more maintenance visits to a site. "The return on investment for the KV-CEI solution can be measured in just a few weeks in warmer climates and at high operating temperatures," says Mosher.

IGBT-Based Motor Drives in Public Transports

The IGBT has a major impact on the transportation sector in all over the world. It enabled the introduction of cost-effective and reliable electronic ignition systems that have improved gasoline fuel efficiency by at least 10 percent. They have also been critical elements in the improvement of mass transit systems and the deployment of electric and hybrid electric vehicles. Modern mass transit systems rely upon electric trains where the propulsion is derived from supplying AC power to motors. High-speed rail, such as the European TGV and the Japanese Shinkansen bullet trains allows travel by large numbers of people while avoiding fossil fuel consumption experienced with gasoline-powered automobiles and aircraft. Until the 1990s, the silicon GTO was the only available power semiconductor switching device with the power handling capability suitable for this application. In the 1990s, the ratings of IGBTs had sufficiently advanced, to exceed one Mega-Watt allowing penetration of the IGBT into this traction market. 

The availability of the IGBT allowed significant improvements in the motor drive technology due to the elimination of snubber circuits and an increase in the operating frequency of the inverter circuit used to deliver power to the motors. Mass transit systems within cities must rely upon busses, trams, and underground trains. Many cities have been replacing gasoline-powered buses with electric buses and trams to reduce urban pollution. All of these below requirements were met by using the IGBT-based motor drive in control system for the electric transit bus: (a) wide range of speed including high operating speed; (b) large startup torque for good acceleration; (c) high efficiency; and (d) regenerative braking to increase utilization of batteries. In Europe and Japan, electric tram transit systems have been modernized by using IGBT-based motor drives. According to AEG-Westinghouse Transport Systeme, Germany, the low floor concept is becoming a standard customer prerequisite. This has been enabled by today’s IGBT modules.

Excessive Heating of IGBTs and How to Avoid Them

An excessive or unexpected increase in the internal temperature can lead to the evaporation of water and loss of coolants in critical turbine cooling systems, and may eventually cause the turbine electronics to overheat. This is a particular concern on machines with an open-loop cooling system and can occur even with the use of high-quality refrigerants. An open-loop system allows water to gradually evaporate from the water-glycol refrigerant in the bipolar insulated gate transistor (IGBT) circuit, particularly during warm weather. (IGBTs are an electronic component typically used in turbines due to their fast and efficient switching capabilities. ) 

A problem can occur when the evaporation of water lowers the coolant level and raises the concentration of the mixture. If the system is left unchecked and not maintained, the resulting imbalance of the mixture inhibits the cooling properties of the fluid. This potentially compromises the IGBT. It goes without saying that a loss of IGBT components due to overheating can result in costly hardware losses and significant downtime of the turbine. To avoid this, wind operators have "bandaged" the problem with a regular rate of coolant monitoring, water replenishment and rebalancing of the coolant mixture. This approach may work when diligently respected, but it is an expensive maintenance plan.

The Use of IGBT in Static UPS Systems

The best way to protect electronic equipment from power problems is by using UPS. UPS units have different sizes, from a little desktop system that shields an individual PC to massive UPS that can supply power to a whole building. Nearly every organization has a power safeguard necessity, ranging from companies with computer UPS provides power to your equipment in the case of an entire power collapse, giving you the opportunity to save data and close files. At a more commencing level, the UPS conditions and filters networks to hospitals, airports, oil rigs and anywhere where uninterrupted power is a must. Today maximum industries are using UPSs to save their core business against mains failures, mains supply fluctuations, power surges, and other troubles in the electrical supply. The option of picking a Rotary or Static UPS for industrial applications has become contentious and the myths require rectification. 

Over recent years, Static UPSs have captured a large share of the UPS market when compared to the Rotary type, although Rotary UPSs still sustain popularity in industrial environments where ratings are in excess of 800kVA. The drawback is, however, that Rotary technology is usually 30% more costly than the substitute Static offerings. Nowadays, Static UPSs are a major rival for industrial installations, and the conveniences and benefits they offer, have seen consultants considering their design criteria from Rotary to Static technology. Outward appearances and inverters of Static UPS have changed amazingly in modern years with thyristor technology being replaced with IGBT technology. 

This recent technology has assisted notably to enhance the potency and managing of non-linear loads (computers and SMP type loads) with excessively low voltage distortion. With thyristor technology, peaks of the voltage waveform were frequently flattened, whereas this does not happen with the more recent IGBT technology. A moreover advantage of IGBT is that it minimizes the size of the inverter stacks and makes allowance for repairs to be done more effortlessly. And, owing to digitally controlled UPS design and growth in the IT arena, it is now very simple to monitor UPSs remotely from a different site or even from another country.

WEG Presents New Variable Speed Drives with IGBT Technology

The world's leading manufacturer of motor and drive technology, presents the new series of MVW3000 variable speed drives with nominal voltage from 2.3kV to 8kV and nominal power from 280 kW to 2,400 kW. This family of devices incorporates multilevel technology and H cascade bridges (CHB). The multilevel topology is based on the serial connection of three to ten low voltage IGBT (690V) power modules, depending on the output voltage. In this way, voltage levels in the medium voltage range can be achieved using, in a cost-effective manner, proven standard low voltage components (diodes, IGBTs, and plastic film capacitors). As a special feature, the MVW3000 is supplied as a complete system integrated into a distribution cabinet, including medium voltage disconnect switch, fuses, multilevel power transformer, and variable speed module.

“The current-voltage and power range is only the first stage in the evolution of the product. Higher voltages and powers are available if requested, ”says Johannes Schwenger, Product Manager for Low and Medium Voltage Drive Systems in Europe for WEG. no additional medium voltage switchgear. This variable speed drive system is distinguished by its extraordinary input and output parameters and excellent levels of energy efficiency and availability.

IGBT Motor Drives in the Hybrid & Electric Vehicles

The automotive industry, the largest in the world, is fast-growing and diverse, with a wide range of customer preferences for design, comfort, and technology. It is well recognized that gasoline power vehicles produce significant urban pollution while consuming a dwindling fossil fuel resource. A solution to this problem is the deployment of electric and hybrid-electric vehicles. The global goals to reduce emissions and fuel consumption, with pioneering efforts in developing electric vehicles (EVs) and hybrid electric vehicles (HEVs), bring significant technology challenges. 

All hybrid-electric and electric cars that have been introduced into the market so far have relied upon IGBT-based motor drives. In new powertrain generations such as EVs and HEVs, IGBTs play a key role in order to drive the electric motor or store the energy. IGBTs run at very high frequencies and under high power which makes them vulnerable to thermal problems. Thermal characterization helps to optimize the IGBTs layout, structure and mounting to optimize its performance. After all, we can say, the availableness of IGBTs has been diametrical to the advancement of hybrid vehicles and to the expansion of the charging substructure for electric vehicles. IGBTs will carry on playing a significant part in the availableness of expense reducing technology for the whole hybrid and electric vehicle business.

Rotor position sensor system for brushless motor control in IGBTS

Brushless motors are frequently used in (H) EV applications. These highly efficient motors are based on fast and precise rotor position sensors for switching, since these sensor parameters have a significant impact on starting behavior, dynamics, torque undulation, and efficiency. There are different principles to detect the position of the rotor: electromechanical (inductive) and magnetic resolution. Sensor systems based on solving the problems of transistors have some limitations (analog output, complex circuit, high system costs, space limitations, sensitivity to lost fields and positioning tolerances, etc.). 

The 32-bit AURIX microcontroller family, With its delta-sigma ADC to perform carrier signal generation and software-based coding, it already helps save the external resolution IC and, therefore, the system cost by 20%. On the other hand, magneto-resistant angle sensors (xMR) with AMR (Anisotropic-Magneto-Resistance) or GMR (Giant-Magneto-Resistance) technology offer high precision accuracy, combined with low sensitivity to the tolerances of position.

ROHM LAUNCHES IT’S 3RD GENERATION

Power semiconductors, including IGBTs, are gaining acceptance due to their implementation in many types of high voltage applications. However, these components are expected to achieve high efficiency and reliability in addition to maintaining low levels of losses. By expanding its existing range, consisting of IGBT for high current and IGBT with lower saturation voltage and faster switching, Rohm now presents its 3rd generation of IGBT for high efficiency. 

The new devices use a finer wafer structure, as well as field attenuation technologies and a trench gate structure to obtain the most advanced features in order to cover the growing need for high-frequency switching. The new Rohm 650V 3rd generation IGBT, based on an advanced field attenuation structure, they offer a lower gradient of carrier concentration in the drift region that allows for improved carrier distribution. Thanks to this, it is possible to reduce the saturation voltage and increase the switching speed, thus achieving an excellent compromise between the saturation voltage and the losses in the cut-off, unlike conventional solutions.

IGBT with Induction Cooker

The inductive cooktop creates a flat smooth surface that is easier to clean making it attractive to consumers. An induction cooker transfers electrical energy by induction from a coil of wire into any pot made of a material that is electrically conductive and ferromagnetic. A coil of wire is mounted under the cooking surface and a large alternating current is passed through it to transfer power to the pot. When an electrically conductive pot is brought close to the cooking surface, the magnetic field induces an electrical current in the pot. 

The current flowing through the electrical resistance in the pot causes electrical power to be dissipated as heat. The heating of the pot can be used for cooking the food. Induction cooktops have become very popular displacing most resistive heated cooktops. The power circuit used to deliver power to the pot via the coil must operate at a relatively high frequency of 25-50 kHz when compared with motor drive inverters. In order to reduce the switching losses in the IGBTs, the typical circuit topology is based upon resonant converters. Soft-switching circuit operation greatly reduces power losses during the switching transient in IGBTs providing high-efficiency circuit operation. Many companies have developed optimized IGBT structures for this application due to the large market size.

IGBT with Train Traction

Modern train traction systems use high-speed switching IGBTs in main circuits. High-speed switching reduces electromagnetic noise generated by the main motor and improves the efficiency of energy conversion. For the inverter control system, vector control is employed to control the torque current component and the exciting current component separately, which are output to the induction motor. Since vector control ensures high-speed torque control, it is also applied to slip-slide control to improve adhesion force. The maintenance work for contacts and pneumatic parts can be eliminated by replacing mechanical contacts in each unit with electronic contacts and by changing the pneumatic operation system to an electromagnetic one. 

The numerous advantages of insulated gate bipolar transistor (IGBT) power modules and their ongoing development for higher voltage and current ratings make them interesting for traction applications. These applications imply high-reliability requirements. One important requirement is the ability to withstand power cycles. Power cycles cause temperature changes which lead to mechanical stress that can result in a failure. Lifting of bond wires is thereby the predominant failure mechanism. A fast power cycling test method activating the main failure mechanism has been developed which allows the reproduction of millions of temperature changes in a short time. The applicability of fast testing is supported by mechanical analysis.

The system frequency converter provides a complete solution for medium voltage applications

The system frequency converter provides a complete solution for medium voltage applications PART 1 The WEG MVW3000 Series of variable speed drives has introduced new devices with many functions such as The MVW3000 medium voltage variable speed drive, which has an Efficiency, power density, and extremely high reliability, is sold as a complete system integrated in a distribution cabinet. WEG has also presented in the MVW3000 series of variable speed drives for voltages from 2.3kV to 8kV and power levels from 28 kW to 2,400kW. This family of devices is built with multilevel technology and Cascade H (CHB) bridges. The multilevel topology is based on the serial connection of three to ten low voltage (690 V) power modules with IGBT output converters in H-bridge configuration, depending on the output voltage. This allows reaching voltage levels in the medium voltage range using proven standard low voltage components (diodes, IGBT and plastic film capacitors) in a cost-effective manner. As a special feature, the MVW3000 is supplied as a complete system integrated into a distribution cabinet, including medium voltage isolator, fuses, multilevel power transformer, and frequency converter "The current-voltage and power range is only the first stage in the product evolution. Higher voltages and power levels are now available upon request, `` said Johannes Schwenger, head of Europe's low voltage and medium voltage product control systems at WEG. "

The MVW3000 is a high-performance all-in-one solution that eliminates the need for additional medium voltage switching devices. This variable speed transmission system has excellent input and output parameters, energy efficiency, and high availability, along with easy maintenance, modularity and smooth motor operation, this makes this variable speed drive system the ideal complement for all commercially available medium voltage motors and the perfect choice for retrofit projects thanks to its virtually output voltage sinusoidal ", if you want to know more about these new implements, join us in part 2 of this article. The MVW3000 variable speed drive system provides extremely high driving performance. The network power factor is greater than 0.95 over the entire engine speed range, without any additional harmonic filters or compensation capacitors. The integrated device architecture provides outstanding harmonic distortion figures for current and voltage (THD I / V and TDD) according to IEEE 519, IEC 61800-3 and G5 / 4-1. The device complies with the limits established in these standards, even in its basic configuration. The performance of the inverter, including the transformer, exceeds 95 percent over the entire motor speed range and is greater than 96 percent with load levels exceeding 40 percent. The charging circuit for the multilevel power transformer ensures the magnetization of the transformer core without starting currents and a smooth charge of the DC link capacitors for the inverter stage. 

The power transformer allows the adaptation of the mains voltage to the motor output voltage and the reduction of the common-mode voltage in the motor winding. It also reduces common-mode currents through motor bearings to maximize bearing life. The interfaces between the frequency converter CPU and the power stage for IGBT control, temperature monitoring, Voltage feedback, and current feedback are implemented using fiber optics to increase noise immunity and provide effective isolation between the control and power sections. The power stages (bridges H) are constructed with plastic film capacitors, semiconductor fuses and an automatic bypass function of the inverter to provide greater system availability in case of failure. Virtually sinusoidal output voltage and current reduce power dissipation, vibration and torque pulsation in the motor. In order to improve the reliability and availability of the system, the MVW3000 is equipped with motor protection devices for protection against overload, overheating and blocking of the motor rotor. 

The temperatures of the power stage and the transformer are also constantly monitored. As a packaging system, the MVW3000 simplifies installation and commissioning. The plug power stages facilitate maintenance and quick replacement. With dimensions of 3,900 x 2,210 x 1,100 mm (W x H x D), the variable speed drive system also has a small footprint. In addition, it can optionally be equipped with all the most common industrial communication protocols, including Modbus, Profibus, Devicenet, and Ethernet. 210 x 1,100 mm (W x H x D), the variable speed drive system also has a small footprint. In addition, it can optionally be equipped with all the most common industrial communication protocols, including Modbus, Profibus, Devicenet, and Ethernet. 210 x 1,100 mm (W x H x D), the variable speed drive system also has a small footprint. In addition, it can optionally be equipped with all the most common industrial communication protocols, including Modbus, Profibus, Devicenet, and Ethernet.

IGBT rectifier technology in UPS

UPS (Uninterruptible Power Supply) is considered as one of the best ways to save electrical equipment from power problems. It is an electrical apparatus that provides emergency power to a load when the input power source, typically mains power fails. At home, we need UPS when we use our PC. Other areas that need UPS are a data center, process backup, military operation, etc. There are several varieties of UPS: online UPS, offline UPS, and line-interactive UPS. 

Online UPS is inverter supply directly to load; offline UPS is the inverter starts only when the utility is not present, line-interactive UPS is an offline UPS with an AVR / line conditioner. There is an inverter that converts DC current (Battery power) to AC current is called UPS inverter. IGBT rectifier technology is the latest and most effective technology in the UPS industry. It uses the high frequency to rectify the AC to DC. IGBT rectifier reduces harmonics substantially and reduces the upsize of upstream components. Hence, reduce initial cost and operation cost.

TRENCHSTOP™ Performance IGBT improves energy efficiency for home appliance and industrial applications

On last April 28th, Infineon Technologies AG commenced the latest 600 V TRENCHSTOP™ Performance IGBT offering the next level of competency. The state-of-the-art discrete IGBT delivers high energy efficiency and reliableness at an aggressive price point for applications like air conditioning, solar PV inverters, drives and uninterruptible power supply (UPS). Based on Infineon’s TRENCHSTOP technology,the latest IGBT is optimized for hard switching topologies working at frequencies of up to 30 kHz. 

The latest TRENCHSTOP Performance IGBT series incorporates the best trade-off between conduction and switch-off energy losses with exceptional toughness. 5 µsec short circuit capacity and fantastic electromagnetic interference (EMI) behaviour. The 600 V TRENCHSTOP Performance is a great alternative to the predecessor TRENCHSTOP IGBT from Infineon as well as to contending products. In a plug-and-play replacement the new TRENCHSTOP Performance IGBT yields lessened losses of 7 percent at switching frequency of 8 kHz. A matchless 11 percent lower aggregate loss is delivered for switching frequency of 15 kHz. Making use of the same packages, redesigns for higher efficiency and competitive cost can be realized simply, fast and with less efforts. The 600 V TRENCHSTOP Performance IGBT contributes to more energy efficient power consumption, higher reliability and longer operational lifetime of the application. For end consumers this translates into a lower electricity bill, sustainability and environmental protection.

New and innovative launch of INFINEON and why you should implement it in your business

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its product portfolio of IGBT modules offering a discrete 1200 V up to 75 A. The devices are co-packed with a diode of maximum classification in a TO-247PLUS package. The new TO-247PLUS packages serve the growing demand for higher power density and greater efficiency in discrete packages. Typical applications with a blocking voltage of 1200 V that require high power density are units, photovoltaic and uninterruptible power supplies (UPS). Other applications include battery charging and energy storage systems. Compared to a TO-247-3 package, the new TO-247PLUS package can provide a double current rating. Due to the removal of the screw hole from the standard TO-247 package, the PLUS package has a larger lead frame area and therefore can accommodate larger IGBT chips. 

Now, for the first time, up to 75 A of 1200 V is available with IGBTs with the same small footprint. The larger lead frame provides lower thermal resistance of the TO-247PLUS, resulting in an improved heat dissipation capacity. For designers looking to improve switching losses, the TO-247PLUS 4pin package features an extra Kelvin emitter source pin. This allows a control loop through the emitter door, in turn, the inductance is ultra-low and reduces the total switching losses E (ts) by more than 20%. IGBTs classified as 1200 V as the TO-247PLUS of 3 and 4 packets they can use to increase the power density of the system. In addition, they can reduce the number of power devices used in parallel, increase the efficiency of the system or improve the thermal conditions of the system.

Automotive Semiconductor Market Report Accelerate Demand for Energy Components such as IGBT and MOSFET part 2

The safety and emission regulations will boost the market of the components and devices connected in the vehicle to ensure monitoring and notification of the emission of vehicles complying with the regulations established by the government. They require increasingly powerful semiconductors to ensure vehicle performance is in compliance. Therefore, the above reason, in turn, is helping the automotive semiconductor market to grow during the planned period of 2016-2024. 

In addition, vehicle standards such as the New Vehicle Assessment Program (NCAP), which gives safety ratings to new vehicles manufactured as stars, They are driving car manufacturers to provide more and more electronic components to provide more safety and security systems for the vehicle. Getting the highest level of five stars can act as a strong selling point for vehicles. Its achievement is based on complex and sophisticated assisted driving systems that require significant semiconductor content for these systems to work.

Automotive Semiconductor Market Report Accelerate the Demand for Energy Components such as IGBT and MOSFET part 1

In this report, we offer a complete market evaluation. through deep qualitative ideas, historical data and verifiable projections on the size of the market. The projections presented in the report have been derived using proven research methodologies and assumptions. In doing so, the research report serves as a repository of analysis and information for each facet of the market, including but not limited to Regional markets, technology, types, and applications. Increase security systems, not just passive security, p. (ABS), electronic stability control (ECS), blind-spot detection (BSD), adaptive cruise control (ACC) and lane change assistance (LCA), among others. All these intelligent functions mentioned above require a semiconductor device to perform its function. 

The main function of a semiconductor is to conduct electricity easily in one direction among other more specific functions. The safety and emission regulations will boost the market of the components and devices connected in the vehicle to ensure monitoring and notification of the emission of vehicles complying with the regulations established by the government.

The Superiority of the IGBT over the MOSFET

The IGBT has the advantage over the MOSFET at higher switching frequencies. But at lower switching frequencies, the MOSFET has the lowest overall loss and the lowest operating junction temperature. (The selected IGBT and MOSFETs have approximately the same matrix sizes and thermal impedances.) This is somewhat contrary to conventional wisdom where it is often argued that MOSFETs perform better at higher switching frequencies. However, these results indicate otherwise and can be attributed mainly due to the significantly lower diode recovery loss component of the IGBT + FRD (fast recovery diode) and the significant improvement in minimizing the tail current behavior of the IGBT.

The lower switching loss of the IGBT + FRD due to a significantly lower diode recovery loss component gives it the advantage over the MOSFET at 20 kHz (a relatively high switching frequency for this application). In addition, the loss of switching of the MOSFET can be significantly reduced by the use of a gate controller with a greater supply capacity and sinking current (for example, a 2-A power supply controller / sinking current). As a result, the total losses of MOSFET would be reduced and would allow the MOSFET to close the gap between it and the IGBT. The resulting higher DV / dt, however, could cause undesirable effects such as high-frequency sounds and a higher level of irradiated EMI. Curiously, At lower switching frequencies where conduction loss dominates, the MOSFET benefits due to the absence of a "knee" in its forward characteristics, along with a relatively low RDS (on). While the IGBT remains the best device to select in this application example, the availability of significantly lower RDS (on) MOSFET along with better diode recovery behavior and a strong gate driver could start tilting the balance towards the MOSFET In that case, it would then reach a cost/performance ratio ("$ / Amp") with the IGBT probably having the edge due to a much higher current density (for a given die size).

Similar IGBTs and MOSFETs are often available for a given application. It is useful to clearly understand the advantages and limitations of both devices and choose the one that best suits the requirements in terms of overall performance and cost. While this is not an easy effort, greater familiarity with these energy devices will be beneficial in navigating these complex decisions.

Application Perspective

Given the wide availability of high voltage power IGBTs and MOSFETs with breaking voltage ratings of 500 to 800 V, designers often face the challenge of selecting an IGBT or MOSFET for a given application and a set of operating conditions. In the case of three-phase variable speed motor drives in the range of nominal powers from 300 W to 5 kW, using a DC bus voltage in the range of 300 to 400 V and typically implemented by a topology of six switches, The IGBT 600 to 650 V (co-packaged with an anti-parallel fast recovery diode) have traditionally been the preferred device from a global performance perspective. However, with the availability of high switching speed.

Overload and Short Circuit of IGBT and MOSFETS

Although the most modern generations of IGBTs tend to have more endurance capacity and an incidence of almost zero shutdown incidents, it is worth knowing what are the characteristics to avoid and how to recognize when one of these failures occurs in order to significantly prolong life of our IGBT or MOSFETS and when they do not give for more, know when to change them. Overload Essentially, the ignition and switching behavior of IGBTs and MOSFETs under overload does not differ from "standard operation" under nominal conditions. In order not to exceed the maximum junction temperature and to ensure safe operation, the overload range has to be restricted, since a higher charging current can cause a greater dissipation of energy in the device or the destruction of components such as diodes due to dynamic failure mode effects. Short circuit Essentially, IGBT and MOSFET are short-circuited proof, that is, they can be short-circuited under certain given conditions and actively deactivated without damaging the power semiconductors.

Hi-rel 1.2kV SiC Module Announced By Wolfspeed

Wolfspeed introduces SiC technology to outdoor systems in transportation and renewable energy. Wolfspeed has stretched its SiC power devices with the launch at PCIM 2017 of the industry’s inaugural power module that overcomes the tough environment qualification test for concurrent high-humidity, high-temperature and high-voltage situations. This reliableness benchmark allows system designers to utilize this device in outdoor applications such as transportation, wind, solar and other renewables where ultimate environmental conditions have traditionally challenged secure device operation. The latest all-SiC module, rated for 300 A and 1.2 kV blocking, was strained in an 85% relative humidity, 85 degrees celsius ambient while biased at 80% of rated voltage (960V). 

Accomplishment in tough situation testing under bias provides further confidence in the overall robustness of SiC device technology for all applications. “SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.” Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the tough environment test at the die level, the latest module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. 

Module construction uses high thermal conductivity aluminum nitride substrates and optimised assembly methods to meet industry thermal and power cycling requirements. “This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed’s chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.” Available under part number WAS300M12BM2, the latest module can be driven using existing Wolfspeed gate drivers for 62mm modules.

IGBT Modules Segmentation and Growth Factors

Currently, the market is facing an inevitable modernization, this includes IGBT modules that begin to replace ancient and rock appliances with the great technological wave and also SIMPLEZA that IGBT have, in this article we will explore two major factors: Global IGBT Market and Thyristors: Growth Due to the technology developed and the introduction of smart grids in the energy sector, the global market for IGBT and thyristors is expected to increase in the near future. However, the increase in population and the demand for a huge source of energy is expected to enhance market growth. IGBT and thyristor are used as power supplies, controllers and inverters in power electronics applications to meet the growing demand for solid state switching devices. 

The increasing number of families and nuclear infrastructure is expected to feed market demand in the future. IGBT and thyristors accommodate several advantages such as less MOSFET switching times and minimum switching losses to meet current electricity demands in the future. Global IGBT and Thyristor Market: Segmentation The global IGBT and thyristor market can be segmented based on the application as a flexible AC transmission system (FACTS) and HVDC. Of which, the application of flexible AC transmission system (FACTS) is the market leading segment, as it is used for congestion management, voltage stabilization, frequency stabilization; Maintain control of power flow and stability, and others. Other application segment is sub-segmented as EV / HEV, renewable energy, liquid level regulator, transport, light regulator, pressure control, motor controls, etc.

Power management applications get latest 1700V and 2500V XPT™ IGBTs launched by IXYS

IXYS Corporation, a leading maker of power semiconductors and ICs for power management, energy efficiency and motor control applications announced the 1700V and 2500V XPT™ IGBTs for power management applications. The current ratings of the new devices range from 26A to 178A and these are perfect for high-voltage (“HV”), high-speed power conversion applications. Devices which are packed together with anti-parallel fast diodes are also available. 

IXYS has an enriched history of presenting cutting edge, state-of-the-art IGBTs and had introduced the HV IGBT outline and applications in power management particularly in the transportation, medical and manufacturing markets. Designed by utilizing the patented IXYS Extreme-Light Punch-Through (XPT™) technology and the leading edge IGBT processes, these latest devices characteristics such as lessened thermal resistance, little tail current, little energy loss, and fast switching capacity. Also, the positive temperature coefficient of their on-state voltage gets credit, the latest high-voltage IGBTs can be used in parallel, which provides cost-efficient solutions compared to series-connected, lower-voltage device ones. This therefore results in diminishing in the related gate drive circuitry, simplicity in design, and advancement in the reliableness of the overall system.

The non-compulsory co-packed fast recovery diodes have less reverse recovery time and are designed to generate smooth switching waveforms and notably lower electromagnetic interference (EMI). A significant number of high-voltage (“HV”), high-speed power management applications that can get advantage from using these IGBTs. Among them are HV converters, inverters, power pulse circuits, laser and X-ray generators, HV power supplies, HV test equipment, capacitor discharge circuits, medical switching applications, HV circuit protection, and HV AC switches. 

The new XPT™ IGBTs are found in the following international standard size packages: SOT-227, TO-247, PLUS247, ISOPLUS i5-Pak™, TO-247HV, TO-247PLUS-HV, and TO-268HV. The latter three have increased creepage distances between leads, making them sturdy against provoked voltages. Some example part numbers include IXYH24N170C, IXYN30N170CV1, IXYH30N170C, and IXYH25N250CHV, with collector current ratings of 58A, 88A, 108A, and 95A, respectively.

IGBTs for Fast Switching, High Current and High Voltage

Prior to the evolution of the IGBT, power electronics engineers had two kinds of devices for fast and higher frequency switching – the Bipolar Junction Transistor (BJT) and the Metal Oxide Field Effect Transistor (MOSFET). Both could switch at higher frequencies than Thyristors (or SCRs). However, either had some limits. MOSFETS provided high switching speeds, yet high voltage and high current plans were comparatively steep, while BJTs were available in high voltage and high current designs, however, offered lower exchanging speeds to some extent. Insulated Gate Bipolar Transistors (IGBTs) are switching devices with three terminals, which could successfully be deliberated to consist of an insulated gate N-channel MOSFET associated with a PNP Bipolar Junction Transistor.

The IGBT unites the high voltage and current capacity of the BJT with the voltage control attributes of a MOSFET which allow higher frequency switching. The IGBT has three connections, Emitter, Gate and Collector. The conduction path is through the Collector and Emitter. Identical to a Thyristor, the IGBT allows controlled current to go through when a signal is recognized at the Gate. A thyristor is “current” and switches “ON” when a pulse is given to the Gate. The IGBT is controlled by voltage, allowing conduction when a positive voltage is there on the Gate, and only switch “OFF” when the voltage is reduced to zero, or ideally, driven negative. The output current and voltage attributes are the same as the BJT, but driving the device using the voltage control of the MOSFET facilitates the switching. Another significant convenience over normal MOSFET operation is lower on-state voltage. The resistance provided by the conducting channel in an IGBT is too much smaller, leading to much higher current ratings than for a similar power MOSFET. IGBTs are the best choice for switching current on and off in high power applications.

IGBTs are made for use in power applications above 1kW, the point at which BJTs and standard MOSFETs reach their limits, switching at frequencies between 1kHz and 20 kHz. Low voltage applications (<600V) tend to be high volume consumer-oriented, for example, to control motor drives for washing machines. Key applications include automotive (electric vehicles), rail traction equipment and industrial motor drives, where operating voltages are higher – 1200V or 1700V are typical of the standard ranges available. In numerous applications, rather than using more than one discrete devices, IGBTs are associated into modules, to provide full circuits for particular power control.

IXYS UK Westcode Introduce It’s Greatest Ever Current Rating IGBT

IXYS UK Westcode has today introduced the maximal true current rating press-pack IGBT available that is set to break new ground in power handling capability of an individual device. The latest symmetric blocking device with an incessant DC rating of 2.8Kv has an unprecedented DC current of 6000A. The latest device has been aided by IXYS UK’s comprehensive expertise in making and understanding the principles of very big press-pack IGBTs with more than one parallel die. The recently developed 4.5Kv devices include vindicated SPT plus die technology and are built using 52 parallel-connected IGBT die, 10 more than the biggest established part with a current rating of 2400A at the same 4.5Kv blocking voltage. Every die is 14.3mm square with an active area of nearly one centimeter squared. The latest device encapsulated in completely sealed 26mm thick with a 132mm electrode diameter, bigger than the traditional 2400A device, but keep up the similar 170mm in-total diameter as the 42 die design; this provides an effective 25% more current rating in the same package.

The sturdy internal development is without bond with the single die straight away pressure contacted through metallic pressure plates to the outside copper electrodes. The outright bond free contact confirms maximum reliability and unparalleled thermal cycling properties, far exceeding those of a conventionally packaged plastic package module. In particular, the short circuit failure mode makes these devices the obvious choice for applications requiring a series operation, such is the case in utilities, HVDC and very large medium voltage drives. The unrivaled current rating can also reduce the number of parallel paths required in very high current applications in the multi megawatts range. Generally, these devices are well suited to harsh environments and where maintenance access is difficult such as off-shore marine and wind. The hermetic structure and high rupture resistance are properties which are particularly relevant in harsh environments where explosive failure and plasma leak are unacceptable, such as mining, gas and oil installation. The package design is based on IXYS UK’s proven technology, with the same conveniences of enhanced rupture capability, resisting more than ten times the short circuit energy of a conventional plastic packaged module device and the additional advantage that the device is virtually guaranteed to fail to a stable short circuit. These unique properties make the new device an ideal solution where high reliability, maximum power density, and predictable failure are important. To facilitate the application of this new higher-rated press-pack IGBT, IXYS UK Westcode has also launched a new complementary diode in its range of very high di/dt HP Sonic FRDs. This new diode is constructed using a new die bonding technology to maximize reliableness. Packaged in an 85mm electrode 26mm thick package the diode is pressure compatible with the press-pack IGBT so it can be mounted in the same series string for compact three-level inverter configurations.

Part number designations for this reverse conduction press-pack IGBTs is T2960BB45E & the compatible HP Sonic FRD is part number E3000TC45E. Typical applications for these devices include: utilities and HVDC applications such as, flexible AC transition systems, HVDC transition, Statcoms, VSC SVC etc; medium voltage AC drives for harsh environments and ultra-high power, such as mining, marine, and offshore g, gas, and oil installations; renewable energy for wind turbines, hydro generation, wave generation and solar; plus, any application where high power density and reliableness is necessary.

CM100TJ-24F Mitsubishi IGBT Power Module

CM100TJ-24F is the best choice to boost the performance level of your Battery Powered Supplies. Manufactured by Mitsubishi, this IGBT power transistor module weighs 0.66 lbs. with a collector current amount of 100A and a collector-emitter of 1200V.

Each module of Mitsubishi CM100TJ-24F consists of six IGBT Transistors in a three-phase bridge configuration. The transistors are all hardwired with reverse connected super-fast recovery free-wheel diode.

In addition, CM100TJ-24F’s components and interconnects are isolated from the heat sinking baseplate, allowing the module to have a simplified system assembly and efficient thermal management.

Other special features are the module’s Low Drive Power and Low VCE (sat) configurations. With these components, expect your Battery Powered Supplies to transform into a superior unit.

High-efficiency, cost-effectiveness, and durability are three benefits your equipment can gain from CM100TJ-24F. Upgrade your Battery Powered Supplies now!

https://www.youtube.com/watch?v=3SytrbXcXJE

CM1000HA-28H Mitsubishi IGBT Module

CM1000HA-28H is the best choice if you want to elevate the capacity of your Welding Power Supplies. Manufactured by Mitsubishi, this high power switching use IGBT module weighs 3.53 lbs. with a collector current amount of 1000A and a collector-emitter voltage of 1400V.

CM1000HA-28H is anchored with a powerful single configuration. This special design is embedded with a reverse-connected super-fast recovery free-wheel diode. Aside from it, this Mitsubishi IGBT module also includes a low drive power and low VCE (sat) setup.

One of the best features of Mitsubishi CM1000HA-28H is the isolation of its components and interconnects from its heat sinking baseplate. This makes the module to simplify its system assembly as well as efficiently manage its thermal capacity. Other features include a Discrete Super-Fast Recovery Free-Wheel Diode and High-Frequency Operation.

High-efficiency, cost-effectiveness, and proven durability are the three benefits you can expect from using CM1000HA-28H.

https://www.youtube.com/watch?v=fdGmCN-b7Do

FP40R12KT3 Eupec Infineon IGBT Module

FP40R12KT3 is an excellent choice to crank up the performance level of your air-conditioning units. Manufactured by Eupec Infineon, this IGBT module weighs a lightweight of 0.4 lbs. with a collector-emitter voltage of 1200V and a 55A collector current.

Eupec Infineon FP40R12KT3 has unique abilities that can elevate the capacity rate of any air-conditioning unit. One standout feature of FP40R12KT3 is its highly modernized layout construction. This makes the module durable and efficient even if it’s being utilized for a long period of time.

Expect three benefits of using FP40R12KT3. First is the module’s proven efficiency to boost the overall performance of your air-conditioning units. Second is durability and lastly is its cost-effectiveness. Aside from air-conditioning units, FP40R12KT3 is also suitable for Motor Drives, Medical equipment, and Induction Heaters

https://www.youtube.com/watch?v=CTL-h0lGRY0