Overload and Short Circuit of IGBT and MOSFETS

Although the most modern generations of IGBTs tend to have more endurance capacity and an incidence of almost zero shutdown incidents, it is worth knowing what are the characteristics to avoid and how to recognize when one of these failures occurs in order to significantly prolong life of our IGBT or MOSFETS and when they do not give for more, know when to change them. Overload Essentially, the ignition and switching behavior of IGBTs and MOSFETs under overload does not differ from "standard operation" under nominal conditions. In order not to exceed the maximum junction temperature and to ensure safe operation, the overload range has to be restricted, since a higher charging current can cause a greater dissipation of energy in the device or the destruction of components such as diodes due to dynamic failure mode effects. Short circuit Essentially, IGBT and MOSFET are short-circuited proof, that is, they can be short-circuited under certain given conditions and actively deactivated without damaging the power semiconductors.