New and innovative launch of INFINEON and why you should implement it in your business

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) expands its product portfolio of IGBT modules offering a discrete 1200 V up to 75 A. The devices are co-packed with a diode of maximum classification in a TO-247PLUS package. The new TO-247PLUS packages serve the growing demand for higher power density and greater efficiency in discrete packages. Typical applications with a blocking voltage of 1200 V that require high power density are units, photovoltaic and uninterruptible power supplies (UPS). Other applications include battery charging and energy storage systems. Compared to a TO-247-3 package, the new TO-247PLUS package can provide a double current rating. Due to the removal of the screw hole from the standard TO-247 package, the PLUS package has a larger lead frame area and therefore can accommodate larger IGBT chips. 

Now, for the first time, up to 75 A of 1200 V is available with IGBTs with the same small footprint. The larger lead frame provides lower thermal resistance of the TO-247PLUS, resulting in an improved heat dissipation capacity. For designers looking to improve switching losses, the TO-247PLUS 4pin package features an extra Kelvin emitter source pin. This allows a control loop through the emitter door, in turn, the inductance is ultra-low and reduces the total switching losses E (ts) by more than 20%. IGBTs classified as 1200 V as the TO-247PLUS of 3 and 4 packets they can use to increase the power density of the system. In addition, they can reduce the number of power devices used in parallel, increase the efficiency of the system or improve the thermal conditions of the system.