Power semiconductors, including IGBTs, are gaining acceptance due to their implementation in many types of high voltage applications. However, these components are expected to achieve high efficiency and reliability in addition to maintaining low levels of losses. By expanding its existing range, consisting of IGBT for high current and IGBT with lower saturation voltage and faster switching, Rohm now presents its 3rd generation of IGBT for high efficiency.
The new devices use a finer wafer structure, as well as field attenuation technologies and a trench gate structure to obtain the most advanced features in order to cover the growing need for high-frequency switching. The new Rohm 650V 3rd generation IGBT, based on an advanced field attenuation structure, they offer a lower gradient of carrier concentration in the drift region that allows for improved carrier distribution. Thanks to this, it is possible to reduce the saturation voltage and increase the switching speed, thus achieving an excellent compromise between the saturation voltage and the losses in the cut-off, unlike conventional solutions.
No comments:
Post a Comment