UK Technology is Used in $240m Chinese IGBT Plant

A $240m IGBT (Insulated Gate BipolarTransistor) manufacture plant has been commenced by Zhuzhou CSR Times Electric Co, a semiconductor maker from China. The company has done this by comprising technology enhanced by Dynex Semiconductor, its supplementary in the United Kingdom. This plant is mentioned to be the first of its category in China and the second all over the world.

Using eight-inch silicon wafers, high performance IGBT modules and chips will be produced in this new factory which is located in Zhuzhou. Output is supposed to touch 120,000 wafers and 1 million IGBT modules every year in the first stage of the operation CSR’s recently formed semiconductor business is managing the latest IGBT range. Its European subsidiary is Dynex.

The multinational CSR Zhuzhou Research & Development Centre is located at Dynex’s site in Lincoln, United Kingdom. The centre was set up in 2010 to focus on cutting-edge power semiconductor technology and, particularly, on the succeeding generation of IGBT products. The technology is being used to make new IGBTs in the new facility has been developed in this R&D centre.

Over two years were needed by the latest production line to be built. Technical advice, support, staff training were provided by Dynex throughout this process, both in China and in Lincoln.

IGBTs are a crucial part in high-efficacy electrical power transformation systems used in variable-speed motor drives, uninterruptable power supplies, power grids, trains, renewable power plants and electric and hybrid electric vehicles. Using the latest soft-punch-through field-stop and trench technologies, high-power modules will be manufactured initially by the new range.

Dr Paul Taylor, president and CEO of Dynex says, “Since the acquisition of Dynex by CSR Times Electric in 2008, there has been a rapid development in our IGBT capability.”

“Since the acquisition of Dynex by CSR Times Electric in 2008, there has been a rapid development in our IGBT capability,” says Dr Paul Taylor, president and CEO of Dynex. “We began with four–inch wafers, then upgraded to six-inch at our plant in Lincoln. We then extended our technology to support the design of this new facility. It complements our base in the UK by giving us access to a world-leading eight-inch IGBT wafer fabrication facility and a high-volume module assembly line.

“Our rapid development does not stop there,” he adds. “The new line has been kitted out with the latest equipment, and the next phase of expansion is already being planned. This targets key markets such as electric automotive and renewable energy. So at our UK R&D Centre, we are already working on designing the next generation of advanced silicon and silicon carbide power devices, and are busy recruiting new staff to expand our multinational research, design and development teams to meet this exciting new challenge.”

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