SCALE-2 IGBT gate drivers from Power Integrations include
galvanic isolation, protection, and DC/DC conversion in a single module, and
are suitable for driving power mosfets and devices based on new materials such
as silicon carbide (SiC) operating at switching frequencies up to 500kHz. each
type is based on an asic chip-set that integrates the full functionality of a
dual-channel gate driver core in a primary-side chip logic-to-driver interface
and a secondary-side chip intelligent gate driver. They are available with
blocking voltage capabilities from 600V to 6,500V and from 1W to 20W per
channel drive. To ensure optimum performance for direct driving of external
n-type DMOS elements, the pre-driver stages of each of the modules incorporate
separate gate resistors for independent control of on/off functionality. There
are single- and dual-channel options, and applications are expected in
industrial, motor control, power transmission, traction, solar, wind and
automotive.
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