IGBT Power Transistor Modules and X-Ray Machines

IGBT power transistor modules had been widely used in the manufacturing of X-ray machine.

Ultra modern X-ray machines benefit from size minimalization. The smaller the size in which the unit is packed, the more effective is the signal as the distance through which control signals need to pass is reduced. One of the problems with X-ray machine design is the need for effective cooling. All electronic components tend to produce a lot of waste heat. Technological advancements have had an influence on this heat generation, but it does seem to be something that so far is an inevitable consequence of the efficiency of the circuitry and needs to be dealt with.

Cooling systems have focused on relatively bulky air cooled heat sinks which limit the reduction in size of the machines. An innovation is a water cooled system which can be packaged into a much smaller overall size and at the same time provides the same overall cooling efficiency.

A typical CT X-ray machine is controlled by a combination of modules which incorporate IGBT and FRED chips. These components allow the overall size of the converter to be very small. In fact, with these sorts of components, the total surface area is around 25% of the generators that were used in the past. It is the compact nature of these modules that results in a waste heat problem that is resolved by a heat sink of some type. Technological advances in IGBT and semiconductor efficiency have to a certain extent meant that heat loss is the major stumbling block to these components, an issue for the future development of IGBT design, which has yet to be resolved.

Apart from relatively bulky air cooled heat sinks, water cooled heat exchangers have been invented to carry away excess heat from the converters used in modern X-ray machines. These heat exchangers have not been able to be reduced in size further because of limitations on their efficiency. This is because there is a thermal barrier between the exterior surface of the converter and that of the heat exchanger, which is typically bolted together.

An innovative way of providing a more efficient water cooling system is the ILC or Integral Water Cooled heat exchanger. In this system, the outer surface of the converter is actually the outer surface of the heat exchanger – they are one and the same structure. This allows the water that is circulating through the heat exchanger to have much more direct access to the heat emanating from the converter.

The comparison between an ILC cooled converter and the older air cooled one is enormous. The air cooled version has a heat sink which is around 10 x 40 x 50 cm in overall dimensions. This is much larger than the converter itself. The ILC heat exchanger is around the same size as the converter and the air cooler without the heat sink, so saving dramatically on overall size and therefore immediately improving the efficiency of the X-ray machine’s operations.

From a design point of view, the plumbing requirements of such an (ILC) system are relatively simple: the modules are either connected by piping directly to the water mains either in series or parallel. This can be achieved because the water chamber is isolated galvanically from the converter’s electrical circuit.

www.USComponent.com had been selling IGBT power transistor modules and serving elevator industry since 2001. Its customer includes Schindler Elevator Corporation, Otis, ThyssenKrupp, Hitachi, Toshiba, Mitsubishi Electric, Kone, and Fujitec.

www.USComponent.com have a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

IGBT Performance Reaches New Levels

IGBTs (Integrated Gate Bipolar Transistors) have now been around for 30 years or so and have played a very useful role in their capacity as a key component in power switches, particularly at high voltages. However, the use of IGBTs has been eclipsed somewhat by power MOSFETs for applications where the switching frequency is at the high end of the power spectrum – greater than 100 kHz. However, that has now changed. IGBT research and development has come up with improvements in IGBT design which mean that these components are now able to handle the frequency range and temperatures which are being demanded by more and more applications.

The new IGBT design is an extremely thin IGBT, fabricated on a wafer structure, which is reported to have a blocking voltage of 650 volts. It is designed for DC to DC conversions of up to 200 kHz. These ultra rapid operating IGBTs are now more than a match for their competitors in the high end semiconductor market.

The superiority of SJ MOSFETS challenged by new version IGBTs

Up to the recent development phase of these ultra thin wafer IGBTs, superjunction (SJ) MOSFETS have been the semiconductor of choice for those applications requiring tolerance to both high temperature and high switching frequency. SJ MOSFETS have actually had a better performance record for these sorts of applications than conventional power MOSFETS as well as IGBTs which have lagged behind in performance. The new IGBT design is touted as matching the performance level of SJ MOSFETS in terms of switching capacity but the main advantage is that the manufacturing process is simpler, making these components much more competitively priced compared to their competitors.

Another comparison between the new IGBTs and SJ MOSFETS gives the IGBTs a clear lead in terms of their Tjmax, which is 175oC, compared to that of the SJ MOSFETS at 150oC.

IGBT structure improvements

The key improvement of these IGBTs is their fabrication process. They are fabricated on an extremely thin wafer of around 70μm using a punch through structure. This design permits the components to incorporate a collector which is only lightly doped. This means that they have less stored charge and consequently much improved switching performance – as has already been mentioned. They are rated up to 200 kHz, which is a doubling of the performance of their predecessors.

One of the inherent problems inherent in older style IGBTs was the fact that electron irradiation or metal doping was used to enhance switching speed. The design has the in-built problem that as the operating temperature increases, the current tends to leak. This limitation has meant that IGBT have had a limited usage role when the Tjmax has been above anything like 150oC. The improvements in design have meant that temperatures up to 175oC and beyond are now tolerated.

At this temperature the leakage of current is very much reduced compared to older style GBT designs. The new style IGBTs have a noticeably higher cell density which has a knock on effect on various other component properties. The lower voltage drop also accompanies a smaller gate capacitance. This combination means that the minimal internal gate resistance still means that the components are capable of the reported doubling of switching speed.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

www.USComponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

IGBT in Vacuum Cleaners

A vacuum cleaner is an appliance that uses an air pump to create a partial vacuum to suck up dust and dirt from floors, and other surfaces. The dirt is collected by a dust-bag for future disposal. Hubert Cecil Booth invented the motorized vacuum cleaner in 1901. Since then, their use has proliferated and vacuum cleaners are now very commonly used in homes on a regular basis to maintain a healthy living environment. Manufacturers of vacuum cleaners include Eureca, Hoover, Bissell, and Dyson. In the past, universal motors were mostly used for vacuum cleaners due to high operating speed with low cost. However, these motors use a mechanical brush which wears out at high speeds limiting the performance. Modern vacuum cleaners with higher output power (suction) are designed using switched reluctance motors. The power circuits used for operation of the switched reluctance motor in vacuum cleaners. These circuits utilize IGBTs to overcome the difficult start-up problem for switched reluctance motors and for maintaining a high operating speed. The author’s state: “Its lifetime is extended 4 times than that of conventional motor and its suction power is increased 20% at the same volume of conventional universal motor”.

IGBT in Refrigerator Compressors

Refrigerators have become essential appliances in society for the preservation of food and beverages. The quality of life for people has been greatly enhanced with the availability of affordable refrigerators for homes. Most household refrigerators utilize the vapor compression cycle with a circulating refrigerant used to cool the refrigerator compartment. Household refrigerators originally used an on/off controlled, constant-speed, single-phase induction motor to drive the compressor. The poor efficiency of this approach made the refrigerator one of the highest power consumption appliances in the home. In order to improve the efficiency, modern refrigerators with the Energy star rating utilize variable-speed, three-phase induction motor drives. Current models that are Energy Star qualified use 50 percent less energy than the average models made in 1974. The variable speed drive to the induction motor is provided using the six IGBTs in the inverter stage. The author’s state: “The total energy savings was about 40%. The system is very quiet and maintains a constant temperature within 0.1 degree Celsius which improves the quality and shelf life of food stored in the refrigerator.” Many companies have optimized IGBTs for use in refrigerator compressor drives due to the large market opportunity. Some companies have developed intelligent power modules, which combine the IGBTs, fly-back rectifiers, and the drive circuits into a single module. This provides a very compact and low cost motor drive option that can be easily adopted for the manufacturing of refrigerators.

IGBT with Power Transmission Systems

In a typical HVDC power transmission system, the power is transmitted at very high voltages (above 100-kV) in order to reduce the current on the cables. Large currents in cables require more copper which adds to the cost and weight. Since power semiconductor devices are unable to withstand such high voltages, it is necessary to connect many devices in series to satisfy the system requirements. In addition, for higher power levels, many devices may have to be connected in parallel as well. The series and parallel combination of power devices comprises an HVDC valve. The most common configuration for modern overhead HVDC transmission lines is bipolar because it provides two independent DC circuits each capable of operating at half capacity. Two basic converters topologies are used in modern HVDC transmission systems: conventional line-commutated, current-source converters (CSC) based up on thyristor-valves and self-commutated, voltage-sourced converters (VSC) based up on IGBT-valves. Each valve consists of a large number of series connected thyristors or IGBTs to sustain the desired DC voltage rating.

In the case of current source converters with thyristor valves, a Graetz bridge configuration is used allowing six commutations or switching operations per period. Self-commutated, voltage-source converters using IGBTs are preferred because they allow independent rapid control of both active and reactive power. Reactive power can also be controlled at each end of the transmission line providing total flexibility in network design. The self-commutated, voltage source converters can be constructed using IGBTs without the snubbers required for GTOs. The rate of rise of the current in the IGBT can be controlled by tailoring the gate drive voltage waveform without any ancillary components. This allows controlling the reverse recovery of the anti-parallel rectifiers without the snubbers. The reduced passive components in the IGBT-based VSC inverters reduce system cost.

Infineon Presenta - Módulos 150A IGBT de EconoPIM de 3 Pulgadas

Infineon amplió la cartera de productos de los módulos IGBT de EconoPIM 3 pulgadas. La corriente nominal del módulo se incrementa con ello de 100A a 150A. Las aplicaciones típicas para los módulos de potencia para las unidades de control de motor en ascensores, escaleras mecánicas, ventiladores o bombas. Los módulos incluyen un rectificador trifásico, un chopper de frenado, un inversor trifásico y un termistor (NTC) para la medición de temperatura. A una tensión de bloqueo de 1200V, el nuevo EconoPIM 3 alcanza una corriente máxima nominal de 150A. La carcasa está equipada con una placa de base y corresponde en dimensión a la norma de la industria. Puede ser incorporado en los diseños existentes. Cuando se utiliza en las unidades EconoPIM 3 permite de acuerdo con el proveedor en el mismo tamaño de hasta 30 por ciento más de potencia de salida. Los módulos de usar el chip IGBT4 con la tecnología TrenchStop, robustez y fiabilidad. Disponibilidad: El módulo EconoPIM con 1200V / 150A está disponible con pines de soldadura o pernos press-fit. Esto se aplica a todas las variantes con el chip IGBT4 en la tecnología TrenchStop. Además, los módulos opcionales con material de interfaz térmica (TIM) están disponibles. Los módulos de potencia están disponibles en la producción de volumen, las muestras están disponibles.

United States Insulated Gate Bipolar Transistors (IGBT) STATCOM Market 2017 - Industry Analysis, Share, Growth, Trends and Forecast from 2012-2022

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Usage of IGBT in UPS Inverter

In the highly emulative UPS market, every renowned UPS manufacturer is trying to ameliorate their UPS performance and reliability steadily. This increasing demand will only be satisfied if the components used can keep pace. IGBTs are considered as one of the best choices for medium and high-power UPS because of their simple control, great switching characteristics and excellent reliability. Especially in terms of efficiency, acoustic noise, size and weight, they remarkably uplift UPS performance. In high power UPS where the inverter operates between 2 and 4 kHz, the main benefit of the IGBT is simplification of transistor control (increased reliability). Its efficiency is equal to that of bipolar transistors. In medium power UPS often installed in computer rooms, the acoustic noise criterion makes it necessary to remove the 50 or 60 Hz transformer and to add an inverter operating at a frequency of 16 kHz, thus making the IGBT absolutely indispensable both due to the lessening in number of components required to control it and due to the gain in weight and in total dimensions. Production of new products calls for a prudent, meticulous choice of new components. We are frequently informed about the announcements of new elements as the IGBT is still in the growth stage. Present studies should not be questioned as authorized approval of a power semiconductor is long and expensive.

IGBT with Induction Rice Cooker

Rice is the first & foremost food for billions of people around the world, especially in Asian countries such as China, India, and Japan, with mass populations. According to Asian Rice Foundation, “Rice is arguably the world’s most important food. It is the second most widely cultivated cereal in the world, after wheat, and is a staple food of over half the world’s population. Rice can be cooked in a variety of ways, including boiling, baking, roasting, frying, and pressure-cooking. Cooking rice in an automatic rice cooker is becoming very popular, as it ensures consistent results and cooking instruction is much simpler to follow”. Many Asian companies have developed rice cookers based up on the induction heating principle. The induction heating can be accomplished by using an induction cooking plate or preferably by using an induction rice cooker. Two types of circuit topologies have been explored for the induction rice cooker. First one is the half-bridge series resonant converter and another is the quasi-resonant converter. The series resonant converter has the advantages of stable switching, low cost, and streamline design. The quasi-resonant converter has the advantage of a smaller design with reduced heat sink. The quasi-resonant converter is more widely used. Due to the large market for these appliances, some semiconductor companies have developed IGBT products optimized for this market for the quasi-resonant converter topology. IGBTs feature a robust and cost effective Field Stop (FS) trench construction, and provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. IGBTs are well suited for this type of resonant or soft switching applications.

Use of IGBTs in Medical Ultrasonography Machines

Heart specialists, neonatologists, obstetricians, urologists, gastroenterologists use ultrasound based imaging extensively for diagnosis and treatment of patients. Sound waves above the audible range of humans are called ultrasound. The choice of the ultrasound frequency for diagnostic purposes is a trade-off between image resolution and special depth. Due to the longer wavelength of the sound wave, lower ultrasound frequencies produce images with less resolution, although these penetrate deeper into the body. Normal ultrasound frequencies range from 2 to 18 MHz. A hand-held probe is used to perform Sonography that is placed and moved over the patient while viewing the image in real time. A piezoelectric transducer with a phased array is contained in the probe, which allows altering the direction and depth of the sound wave. The sound wave is reverberated from the organs inside the body at different intensities depending upon their composition and the time taken for the echo to return to the transducer specifies the distance travelled by the wave. For diagnostic purposes, this information is converted to an image. The application of a high voltage pulse to the piezoelectric medium produces the sound wave from the ultrasound transducer. The pulse must have amplitude of over 1000 volts with a current of 20-50 amperes. Because of the short duration of the pulse, generally 0.5 microseconds, with a less operating frequency of 200-Hz, the best approach is to slowly charge a capacitor through a diode when the IGBT is off and then turn-on the IGBT for the short pulse duration to discharge the capacitor through the transducer.

Benefits of IGBT Switching Speed in Elevators

PWM VFD operations need great switching speed which can be attained by using IGBTs (insulated gate bipolar transistor). Switching on and off several thousand times a second is one of the main attributes of IGBTs. A VFD IGBT can turn on in less than 400 nanoseconds and off in about 500 nanoseconds. It is composed of a gate, collector and an emitter. When a positive voltage (typically +15 VDC) is applied to the gate the IGBT will turn on. This is same to closing a switch. Current will flow between the collector and emitter. A VFD IGBT is turned off by removing the positive voltage from the gate. During the off state the IGBT gate voltage is generally held at a small negative voltage (-15 VDC) to restrain the device from turning on. IGBTs are used as power devices by all recent VFDs. These devices make it possible to reduce annoying audible noise by using switching frequencies beyond the audible range. Unfortunately, VFDs using IGBTs, present a high potential for generating RFI - Radio Frequency Interference. Fast switching in these devices generates sharp-edged waveforms with high frequency components that generate more RFI. The most probable complaint is interference with AM band radios 500-1600 kHz. However, sensitive computers, medical equipment and other interference-sensitive devices sharing the same power buss could experience significant interference. In extreme conditions, the VFD itself can experience electrical noise interference. If elevator machine room equipment is not properly laid out and correctly wired, the electrical noise propagated by the elevator VFD system can intervene with the elevator controller. The switching speed, simple control and overload withstand of the IGBT currently make it a component of considerable interest.

IGBT Induction Heating Coil in Photocopiers and Printers

The fixing system for the toner in copy machines, laser printers, facsimile machines, data recorders, and scanners needs transfer of toner from the rolling drum to the printing paper with heat and pressure. Radiant heating with halogen lamps was used for this process in the past. However, nearly 90 percent of the printing energy is consumed by this operation. The efficiency can be improved by using the induction heating approach leading to reduction of the size of the printing devices. The induction heating coil is installed concentrically inside the fixing roller. The high frequency inverter required to feed the inductive energy into the heating coil is built using IGBTs. The actual high efficiency of more than 94 percent of the series resonant ZCS-PDM high frequency inverter for IH roller in copy and printing machines has been observed for all the output AC power regulation ranges from 50 to 1200 W.

IGBT Transistors in CNC Plasma Cutting Machines

Plasma cutting involves cutting a material using a plasma torch. It is commonly used to cut steel and other metals, but can be used on a variety of materials. In this process, gas (such as compressed air) is blown at high speed out of a nozzle; at the same time an electrical arc is formed through that gas from the nozzle to the surface being cut, turning some of that gas to plasma. The plasma is sufficiently hot to melt the material being cut and moves sufficiently fast to blow molten metal away from the cut. The transistors used in plasma cutting were initially MOSFETs, but are now increasingly using IGBTs. With paralleled MOSFETs, if one of the transistors activates prematurely it can lead to a cascading failure of one quarter of the inverter. A later invention, IGBTs, is not as subject to this failure mode. IGBTs can be generally found in high current machines where it is not possible to parallel sufficient MOSFET transistors.