Usage of IGBT in UPS Inverter

In the highly emulative UPS market, every renowned UPS manufacturer is trying to ameliorate their UPS performance and reliability steadily. This increasing demand will only be satisfied if the components used can keep pace. IGBTs are considered as one of the best choices for medium and high-power UPS because of their simple control, great switching characteristics and excellent reliability. Especially in terms of efficiency, acoustic noise, size and weight, they remarkably uplift UPS performance. In high power UPS where the inverter operates between 2 and 4 kHz, the main benefit of the IGBT is simplification of transistor control (increased reliability). Its efficiency is equal to that of bipolar transistors. In medium power UPS often installed in computer rooms, the acoustic noise criterion makes it necessary to remove the 50 or 60 Hz transformer and to add an inverter operating at a frequency of 16 kHz, thus making the IGBT absolutely indispensable both due to the lessening in number of components required to control it and due to the gain in weight and in total dimensions. Production of new products calls for a prudent, meticulous choice of new components. We are frequently informed about the announcements of new elements as the IGBT is still in the growth stage. Present studies should not be questioned as authorized approval of a power semiconductor is long and expensive.

IGBT and its Usage in Motor Control

The IGBT, Insulated Gate Bipolar Transistor, is a switching transistor that is driven by voltage applied to the gate terminal. Device structure and operation are identical to those of an Insulated Gate Field Effect Transistor, generally known as a MOSFET. The primary dissimilarity between the two device types is that the IGBT uses conductivity modulation to reduce on-state conduction losses which MOSFET does not do.

IGBT is a device that integrates the voltage feature of a bipolar transistor (collector – emitter) and the drive feature of a MOSFET. The key reason behind the flourishing popularity of IGBT is its superiority at high speed switching applications. This device is well-known for integrating high efficiency and fast switching. It is mainly used as an electronic switch in many modern appliances: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, air-conditioners and even stereo systems with switching amplifiers. Today we will discuss about usage of IGBT in motorcontrol.

Advancements of highly capable motor drives are very essential for industrial applications. Satisfactory dynamic speed command tracking and load regulating response are two must needs, for a high performance motor drive system. DC motors excel in terms of speed control for acceleration and deceleration. The power supply of a DC motor joins right away to the field of the motor which approves for accurate voltage control, and is required for pace and torque control applications. Because of their simpleness, ease of application, dependability and auspicious cost, DC drives have long been a mainstay of industrial applications. Because of low horsepower ratings, DC drives are usually less costly in comparison with AC drive systems. DC motors are being used as adjustable speed machines traditionally and an extensive extent of options has developed for this intention.

To obtain sufficient levels of power handling capability, especially in motor control applications those demand multiple drive elements, power integrated circuits have been developed using hybrid constructions of the distinct transistors. Hybrid techniques have been necessary and useful due to the power handling limitations of monolithic power integrated circuit technology. Power integrated circuit design has often been limited by the absence of power packages that provide the low thermal impedance and high performance switching necessary for reliable operation. The switching elements of these modules, which may be Insulated Gate Bipolar Transistors (IGBTs) or various forms of thyristors, “chop” low-frequency (e.g., 60 Hz or dc) voltages /currents at the input / output port into high-frequency square wave pulses of variable width (20 to 200 ms).

The silicon GTO was the only available power semiconductor switching device until the 1990s. It had power conducting ability compatible for motor control applications. The ratings of IGBTs had adequately developed in the 1990s. It overcame one Megawatt which allowed entrance of the IGBT into the traction market. The availableness of the IGBT made allowance for notable advancements in the motor drive technology due to exclusion of snubber circuits and an raise in the operating frequency of the inverter circuit employed to transfer power to the motors.

Usage of FZ1600R17KF6C_B2 IGBT - Get Electronic Semiconductor Components at USComponent

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FZ1600R17KF6C_B2 is a perfect tool to make railway tractions enter another stage of evolution. With this powerful IGBT (stands for Insulated Gate Bipolar Transistor) module made by Infineon, railway tractions would be better than ever! This device can provide tremendous power of up to 2600A or 1700V, gaining the ability to boost traction’s strength and achieve optimum electric performance.

FZ1600R17KF6C_B2 is a 130-millimeter single switch IGBT transistor module. Equipped with an AlSiC base plate and enlarged diode, FZ1600R17KF6C_B2 can emit power that won’t easily degenerate. Its high power density is also another factor why it can strengthen railway tractions significantly.

With high reliability and adept module construction, FZ1600R17KF6C_B2 guarantees efficiency to charge up railway tractions and maintain full function for a long time.

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IGBT and its Usage in Motor Control

http://www.USComponent.com/igbt-usage-motor-control/


The IGBT, Insulated Gate Bipolar Transistor, is a switching transistor that is driven by voltage applied to the gate terminal. Device structure and operation are identical to those of an Insulated Gate Field Effect Transistor, generally known as a MOSFET. The primary dissimilarity between the two device types is that the IGBT uses conductivity modulation to reduce on-state conduction losses which MOSFET does not do.

IGBT is a device that integrates the voltage feature of a bipolar transistor (collector – emitter) and the drive feature of a MOSFET. The key reason behind the flourishing popularity of IGBT is its superiority at high speed switching applications. This device is well-known for integrating high efficiency and fast switching. It is mainly used as an electronic switch in many modern appliances: variable-frequency drives (VFDs), electric cars, trains, variable speed refrigerators, air-conditioners and even stereo systems with switching amplifiers. Today we will discuss about usage of IGBT in motor control.

Advancements of highly capable motor drives are very essential for industrial applications. Satisfactory dynamic speed command tracking and load regulating response are two must needs, for a high performance motor drive system. DC motors excel in terms of speed control for acceleration and deceleration. The power supply of a DC motor joins right away to the field of the motor which approves for accurate voltage control, and is required for pace and torque control applications. Because of their simpleness, ease of application, dependability and auspicious cost, DC drives have long been a mainstay of industrial applications. Because of low horsepower ratings, DC drives are usually less costly in comparison with AC drive systems. DC motors are being used as adjustable speed machines traditionally and an extensive extent of options has developed for this intention.

To obtain sufficient levels of power handling capability, especially in motor control applications those demand multiple drive elements, power integrated circuits have been developed using hybrid constructions of the distinct transistors. Hybrid techniques have been necessary and useful due to the power handling limitations of monolithic power integrated circuit technology. Power integrated circuit design has often been limited by the absence of power packages that provide the low thermal impedance and high performance switching necessary for reliable operation. The switching elements of these modules, which may be Insulated Gate Bipolar Transistors (IGBTs) or various forms of thyristors, “chop” low-frequency (e.g., 60 Hz or dc) voltages /currents at the input / output port into high-frequency square wave pulses of variable width (20 to 200 ms).

The silicon GTO was the only available power semiconductor switching device until the 1990s. It had power conducting ability compatible for motor control applications. The ratings of IGBTs had adequately developed in the 1990s. It overcame one Megawatt which allowed entrance of the IGBT into the traction market. The availableness of the IGBT made allowance for notable advancements in the motor drive technology due to exclusion of snubber circuits and an raise in the operating frequency of the inverter circuit employed to transfer power to the motors.