PWM
VFD operations need great switching speed which can be attained by using IGBTs
(insulated gate bipolar transistor). Switching on and off several thousand
times a second is one of the main attributes of IGBTs. A VFD IGBT can turn on
in less than 400 nanoseconds and off in about 500 nanoseconds. It is composed
of a gate, collector and an emitter. When a positive voltage (typically +15
VDC) is applied to the gate the IGBT will turn on. This is same to closing a
switch. Current will flow between the collector and emitter. A VFD IGBT is
turned off by removing the positive voltage from the gate. During the off state
the IGBT gate voltage is generally held at a small negative voltage (-15 VDC)
to restrain the device from turning on. IGBTs are used as power devices by all
recent VFDs. These devices make it possible to reduce annoying audible noise by
using switching frequencies beyond the audible range. Unfortunately, VFDs using
IGBTs, present a high potential for generating RFI - Radio Frequency
Interference. Fast switching in these devices generates sharp-edged waveforms
with high frequency components that generate more RFI. The most probable
complaint is interference with AM band radios 500-1600 kHz. However, sensitive
computers, medical equipment and other interference-sensitive devices sharing
the same power buss could experience significant interference. In extreme
conditions, the VFD itself can experience electrical noise interference. If
elevator machine room equipment is not properly laid out and correctly wired,
the electrical noise propagated by the elevator VFD system can intervene with
the elevator controller. The switching speed, simple control and overload
withstand of the IGBT currently make it a component of considerable interest.
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