Renesas Electronics Launches Their 8th Generation That Improve The Solar Systems

Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the availability of six new products in the 8th-generation G8H Series of insulated gate bipolar transistor (IGBT) devices that minimizes conversions losses, in power conditioners for solar power generation systems and reduce inverter applications in uninterruptable power supply (UPS) systems.

Compared to the previous generation of IGBTS, these are said to be faster and have a  better switching performance along with a  better charging system while also reducing the conduction loss by lowering the saturation voltage. Additionally, the devices’ performance index is claimed to have been improved by up to 30% compared to the previous 7th-generation IGBTs.

In solar power system IGBTS  theres always some amount of power loss that’s why it’s a top priority to reduce this problem, reducing the power loss has a positive impact when manufacturing and using these modules.
Some key features about this 8^th generation are:

·         Faster switching, industry-leading ultra-low power loss features ideal for inverter circuits

·         Eliminated external gate resistors thanks to low switching noise

·         Industry’s-First 1,250 V IGBT with built-in diode in a TO-247 plus discrete-package version available for 75 A current band rated at 100C

·         TO-247 package with excellent heat dissipation; operation guaranteed at high temperatures up to 175°C