IXYS Bridge Rectifier VUO190-12NO7

VUO190-12NO7 is a bridge rectifier diode, which is an electronic component used to convert alternating current (AC) into direct current (DC) by rectifying the voltage.

The "VUO" prefix is likely the part number prefix assigned by the manufacturer, while "190" refers to the maximum repetitive peak reverse voltage (VRRM) rating of the diode in volts. "12" refers to the maximum average forward rectified current (IF(AV)) in amps, and "NO7" is a package code or designation used by the manufacturer to indicate the specific package or form factor of the diode.

Based on this information, the VUO190-12NO7 bridge rectifier diode can handle a maximum peak reverse voltage of 190 volts, a maximum average forward rectified current of 12 amps and comes in a specific package type designated by the manufacturer as NO7.

SCR Silicon Controlled Rectifier TT425N16KOF

TT425N16KOF is a Silicon Controlled Rectifier (SCR) manufactured by Vishay Semiconductors.

The SCR is a type of semiconductor device that can switch and control large amounts of power, making it suitable for a variety of industrial applications.

The TT425N16KOF SCR has the following specifications:

Repetitive Peak Off-State Voltage (Vdrm): 1600V

On-State Current (It(RMS)): 425A

Peak Non-Repetitive Surge Current (Itsm): 5500A

Gate Trigger Current (Igt): 150mA

Operating Temperature: -40°C to +125°C

This SCR is designed for use in high-power industrial applications such as power supplies, motor controls, and welding equipment. It features high voltage and current ratings, low on-state voltage drop, and high surge capability, making it a reliable option for high-power switching and control.

Toshiba IGBT Module MG50Q6ES40

MG50Q6ES40 is an Insulated Gate Bipolar Transistor (IGBT) that is designed for use in high-power switching applications. It is a N-Channel IGBT that can handle a maximum collector current of 50A and a maximum collector-emitter voltage of 600V.

The IGBT features a low on-state voltage drop, which means that it can conduct large amounts of current with low power dissipation. This results in high efficiency and reduced heat generation. Additionally, the IGBT has a fast switching speed, which allows for high-frequency operation.

The MG50Q6ES40 is packaged in a high-performance module that offers excellent thermal conductivity and electrical insulation properties. It has six terminals for easy connection to external circuitry.

This IGBT is commonly used in power supplies, motor drives, and other high-power applications where efficient and reliable switching is required. Its low on-state voltage drop, fast switching speed, and high voltage capability make it a popular choice among engineers and designers in the power electronics industry.

Powerex KD421K15 Darlington Transistor

KD421K15 is a dual Darlington transistor module that contains two high-current, high-gain Darlington transistors in a single package. Each transistor consists of two PNP transistors connected in a Darlington configuration, which provides a high current gain and a low saturation voltage. The module is designed for use in a wide range of applications, including motor control, power supply regulation, and audio amplification.

The KD421K15 module is housed in a TO-3P package, which is a popular form factor for high-power semiconductors. The package has three leads, with the center lead connected to a metal tab that serves as a heat sink for the transistors. The module is rated for a maximum collector current of 5A and a maximum collector-emitter voltage of 120V. The typical DC current gain of each transistor is 1000, and the typical saturation voltage is 1.5V at a collector current of 3A.

The KD421K15 module is designed for ease of use, with the two transistors pre-mounted on a common heat sink and with the necessary base resistors already installed. The module can be directly mounted on a printed circuit board or attached to a heat sink using screws or a clip. The module also has a built-in protection diode to protect against voltage spikes and transients.

Overall, the KD421K15 dual Darlington transistor module is a reliable and convenient component for high-current, high-gain amplification and control applications.

Infineon IGBT Module FZ1200R17KF6C_B2

FZ1200R17KF6C_B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies.

The "FZ1200R17KF6C" part of the name refers to the IGBT module itself, while "_B2" is likely a designation for a specific version or revision of the module.

The FZ1200R17KF6C_B2 IGBT module has the following specifications:

Collector-Emitter Voltage (Vces): 1700V

Collector Current (Ic): 1200A

Maximum Power Dissipation (Pd): 7500W

Gate-Emitter Voltage (Vges): +/- 20V

Operating Temperature: -40°C to +125°C

This IGBT module is designed for use in high-power applications, such as industrial motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications.

Infineon IGBT Module FZ400R17KE3

FZ400R17KE3 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high power switching applications. It is part of the IGBT4 series from Infineon Technologies.

The module has a maximum collector-emitter voltage of 1700V and a maximum collector current of 400A. It has a low on-state voltage drop and high switching speed, making it suitable for high-frequency switching applications.

The FZ400R17KE3 is designed with a 7th generation IGBT chip and an advanced diode for improved performance and efficiency. It also features a low-inductance module design for reduced switching losses and a longer lifespan.

The module is equipped with a thermistor for temperature monitoring and protection against over-temperature conditions. It also has a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.

Overall, the FZ400R17KE3 is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment.

SanRex CVM75BB160 Bridge Diode Rectifier

CVM75BB160 is a high-power bridge rectifier diode designed for use in high-voltage and high-current applications. It is a four-terminal device that consists of four diodes arranged in a bridge configuration. This allows the diode to convert an alternating current (AC) input signal into a direct current (DC) output signal.

The CVM75BB160 diode is housed in a compact and rugged module that is designed for easy mounting and high reliability. The module is constructed using a high-temperature, thermally conductive material that allows for efficient heat dissipation. The diode module is rated for a maximum peak reverse voltage of 1600V and a maximum average forward current of 75A.

The CVM75BB160 diode module has low forward voltage drop and low leakage current, which results in high efficiency and low power dissipation. The module also has a high surge capability, which makes it suitable for use in applications with high transient overloads. The diode module has a built-in snubber circuit that reduces voltage spikes and transients, protecting the diode from damage and increasing the module's overall reliability.

Overall, the CVM75BB160 bridge rectifier diode module is a high-performance and reliable component that is widely used in power supply, motor control, and other high-current applications. Its compact and rugged design, high surge capability, and built-in protection features make it an ideal choice for demanding industrial and commercial applications.

Mitsubishi IGBT Module CM400DU-12NFH

CM400DU-12NFH is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric.

The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.

The CM400DU-12NFH IGBT module has the following specifications:

• Collector-Emitter Voltage (Vces): 1200V

• Collector Current (Ic): 400A

• Maximum Power Dissipation (Pd): 2200W

• Gate-Emitter Voltage (Vges): +/- 20V

• Operating Temperature: -40°C to +150°C

This IGBT module is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high-power applications.

Mitsubishi Electric IGBT Distributor of CM200DU-24NFH

CM200DU-24NFH is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. It is manufactured by Mitsubishi Electric.

The module has a maximum collector-emitter voltage of 1200V and a maximum collector current of 200A. It is designed with a 7th-generation IGBT chip and an advanced diode for improved performance and efficiency.

The CM200DU-24NFH also features a low-inductance module design for reduced switching losses and improved reliability. It is equipped with a temperature sensor for monitoring and protection against over-temperature conditions.

The module is designed with a compact and lightweight package, making it suitable for use in space-constrained applications. It also features a high surge current capability, which makes it suitable for use in applications with high current transients.

The CM200DU-24NFH is equipped with a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.

Overall, the CM200DU-24NFH is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment. It offers high power density, high efficiency, and improved reliability, making it an ideal solution for demanding high-power applications.

Mitsubishi Electric IGBT Module CM50DY-12H

CM50DY-12H is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Mitsubishi Electric.

The IGBT is a type of power semiconductor device that combines the high-speed switching capability of a MOSFET with the high-voltage and high-current handling capabilities of a bipolar transistor.

The CM50DY-12H IGBT module has the following specifications:

Collector-Emitter Voltage (Vces): 1200V

Collector Current (Ic): 50A

Maximum Power Dissipation (Pd): 330W

Gate-Emitter Voltage (Vges): +/- 20V

Operating Temperature: -40°C to +150°C

This IGBT module is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It features low switching losses and high thermal performance, making it an efficient and reliable option for high-power applications. The module also includes built-in protective features such as overcurrent and overvoltage protection, making it safer to use in high-power applications.