Prespectiva de la Aplicacion

Dada la amplia disponibilidad de IGBTs y MOSFETs de potencia de alto voltaje con clasificaciones de voltaje de ruptura de 500 a 800 V, los diseñadores suelen enfrentarse al reto de seleccionar un IGBT o MOSFET para una aplicación dada y un conjunto de condiciones operativas. En el caso de accionamientos de motor de velocidad variable trifásicos en el rango de potencias nominales de 300 W a 5 kW, utilizando una tensión de bus cc en el rango de 300 a 400 V y típicamente implementado mediante una topología de seis interruptores, Los IGBT de 600 a 650 V (co-empaquetados con un diodo de recuperación rápida anti-paralelo) han sido tradicionalmente el dispositivo preferido desde una perspectiva de rendimiento global. Sin embargo, con la disponibilidad de alta velocidad de conmutación, RDS bajo (on) y diodos de cuerpo de recuperación relativamente rápidos de 500 a 650 V, se plantea la cuestión de si es hora de que el IGBTceda el MOSFET

Sobrecarga y Cortocircuito de los IGBT y MOSFETs

Aunque las generaciones mas modernas de los IGBT suelen tener mas capacidad de aguante y una incidencia a incidentes de apagado casi nula vale la pena saber cuales son las caracteristicas a evitar y como reconocer cuando sucede una de estas fallas para asi prolongar de manera significativa la vida de nuestros IGBT o MOSFETS y cuando no dan para mas, saber cuando cambiarlos.

Sobrecarga Esencialmente, el comportamiento de encendido y conmutación de IGBTs y MOSFETs bajo sobrecarga no difiere de la "operación estándar" bajo condiciones nominales. Con el fin de no sobrepasar la temperatura de unión máxima y para garantizar un funcionamiento seguro, el rango de sobrecarga tiene que ser restringido, ya que una mayor corriente de carga puede causar una mayor disipación de energía en el dispositivo o la destrucción de componentes tales como diodos debidos a efectos de modo de fallo dinámico. Cortocircuito Esencialmente, IGBT y MOSFET son a prueba de cortocircuitos, es decir, pueden ser sometidos a cortocircuitos bajo ciertas condiciones dadas y desactivarlos activamente sin dañar los semiconductores de potencia.

Hi-rel 1.2kV SiC Module Announced by Wolfspeed

Wolfspeed introduces SiC technology to outdoor systems in transportation and renewable energy. Wolfspeed has stretched its SiC power devices with the launch at PCIM 2017 of the industry’s inaugural power module that overcomes the tough environment qualification test for concurrent high-humidity, high-temperature and high-voltage situations. This reliableness benchmark allows system designers to utilize this device in outdoor applications such as transportation, wind, solar and other renewables where ultimate environmental conditions have traditionally challenged secure device operation. The latest all-SiC module, rated for 300 A and 1.2 kV blocking, was strained in an 85% relative humidity, 85 degree celsius ambient while biased at 80% of rated voltage (960V).

Accomplishment in tough situation testing under bias provides further confidence in the overall robustness of SiC device technology for all applications. “SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.” Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the tough environment test at the die level, the latest module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. Module construction uses high thermal conductivity aluminum nitride substrates and optimised assembly methods to meet industry thermal and power cycling requirements. “This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed’s chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.”

Available under part number WAS300M12BM2, the latest module can be driven using existing Wolfspeed gate drivers for 62mm modules.

Modulos IGBT Segmentacion y Factores de Crecimiento

Actualmente el mercado enfrenta una modernización inevitable esto incluye los modulos IGBT que empiezan a reemplazar aparatos rupestres y antiguos con la gran oleada tecnológica y ademas SIMPLEZA que los IGBT tienen, en este articulo exploraremos dos grandes factores: Mercado Global de IGBT y Tiristores: Factores de Crecimiento Debido a la tecnología desarrollada y la introducción de redes inteligentes en el sector de la energía, se prevé que el mercado mundial de IGBT y tiristores aumentará en un futuro próximo. Sin embargo, el aumento de la población y la demanda de una enorme fuente de energía se espera que realce el crecimiento del mercado.

 IGBT y tiristor se utilizan como fuentes de alimentación, controladores e inversores en aplicaciones de electrónica de potencia para satisfacer la creciente demanda de dispositivos de conmutación de estado sólido. Se espera que el número creciente de familias e infraestructura nucleares alimente la demanda del mercado en el futuro. IGBT y tiristores acomodan varias ventajas tales como menos tiempos de conmutación de MOSFET y pérdidas mínimas de conmutación para satisfacer las demandas actuales de electricidad en el futuro. Mercado Global de IGBT y Tiristores: Segmentación El mercado mundial de IGBT y tiristores puede ser segmentado en base a la aplicación como sistema de transmisión de CA flexible (FACTS) y HVDC. De los cuales, la aplicación de sistema de transmisión de CA flexible (FACTS) es el segmento líder en el mercado, ya que se utiliza para la gestión de la congestión, estabilización de voltaje, estabilización de frecuencia; Mantener el control de flujo de potencia y estabilidad, y otros. Otros segmento de aplicación es sub-segmentado como EV / HEV, energía renovable, regulador de nivel de líquido, transporte, regulador de luz, control de presión, controles de motor, etc.

Power Management Applications Get Latest 1700V and 2500V XPT™ IGBTs Launched by IXYS

IXYSCorporation, a leading maker of power semiconductors and ICs for power management, energy efficiency and motor control applications announced the 1700V and 2500V XPT™ IGBTs for power management applications. The current ratings of the new devices range from 26A to 178A and these are perfect for high-voltage (“HV”), high-speed power conversion applications. Devices which are packed together with anti-parallel fast diodes are also available.

IXYS has an enriched history of presenting cutting edge, state-of-the-art IGBTs and had introduced the HV IGBT outline and applications in power management particularly in the transportation, medical and manufacturing markets. Designed by utilizing the patented IXYS Extreme-Light Punch-Through (XPT™) technology and the leading edge IGBT processes, these latest devices characteristics such as lessened thermal resistance, little tail current, little energy loss, and fast switching capacity. Also, the positive temperature coefficient of their on-state voltage gets credit, the latest high-voltage IGBTs can be used in parallel, which provides cost-efficient solutions compared to series-connected, lower-voltage device ones. This therefore results in diminishing in the related gate drive circuitry, simplicity in design, and advancement in the reliableness of the overall system. The non-compulsory co-packed fast recovery diodes have less reverse recovery time and are designed to generate smooth switching waveforms and notably lower electromagnetic interference (EMI).

A significant number of high-voltage (“HV”), high-speed power management applications that can get advantage from using these IGBTs. Among them are HV converters, inverters, power pulse circuits, laser and X-ray generators, HV power supplies, HV test equipment, capacitor discharge circuits, medical switching applications, HV circuit protection, and HV AC switches. The new XPT™ IGBTs are found in the following international standard size packages: SOT-227, TO-247, PLUS247, ISOPLUS i5-Pak™, TO-247HV, TO-247PLUS-HV, and TO-268HV. The latter three have increased creepage distances between leads, making them sturdy against provoked voltages. Some example part numbers include IXYH24N170C, IXYN30N170CV1, IXYH30N170C, and IXYH25N250CHV, with collector current ratings of 58A, 88A, 108A, and 95A, respectively.

Diferencias basicas y fisicas entre el IGBT Y el MOSFET

Después de evolucionar lado a lado en las últimas tres décadas, los transistores bipolares de puerta aislada (IGBTs) y MOSFET dominan ahora el mercado de semiconductores de potencia en aplicaciones como unidades de motor, fuentes de alimentación ininterrumpida (UPS) e inversores solares. Entonces, ¿dónde hacer IGBTs hacer el mejor ajuste, y cuándo tiene sentido de diseño mejor para ir con un MOSFET? Estructuras y principios básicos El IGBT es un dispositivo semiconductor que combina las características de salida de un transistor bipolar y las características de accionamiento de puerta de un MOSFET.

Por lo tanto, el IGBT es un dispositivo portador de minorías con alta impedancia de entrada y alta capacidad de transporte de corriente. En comparación con los MOSFETs, los IGBT también son más adecuados para escalar en capacidad de manejo de corriente a niveles de voltaje más altos debido a sus características de salida bipolares.

IGBTs for Fast Switching, High Current and High Voltage

Prior to the evolution of the IGBT, power electronics engineers had two kinds of devices for fast and higher frequency switching – the Bipolar Junction Transistor (BJT) and the Metal Oxide Field Effect Transistor (MOSFET). Both could switch at higher frequencies than Thyristors (or SCRs). However, either had some limits. MOSFETS provided high switching speeds, yet high voltage and high current plans were comparatively steep, while BJTs were available in high voltage and high current designs, however offered lower exchanging speeds to some extent.

Insulated Gate Bipolar Transistors (IGBTs) are switching devices with three terminals, which could successfully be deliberated to consist of an insulated gate N-channel MOSFET associated with a PNP Bipolar Junction Transistor. The IGBT unites the high voltage and current capacity of the BJT with the voltage control attributes of a MOSFET which allow higher frequency switching. The IGBT has three connections, Emitter, Gate and Collector. The conduction path is through the Collector and Emitter. Identical to a Thyristor, the IGBT allows controlled current to go through when a signal is recognized at the Gate. A thyristor is “current” and switches “ON” when a pulse is given to the Gate.

The IGBT is controlled by voltage, allowing conduction when a positive voltage is there on the Gate, and only switching “OFF” when the voltage is reduced to zero, or ideally, driven negative. The output current and voltage attributes are same to the BJT, but driving the device using the voltage control of the MOSFET facilitates the switching. Another significant convenience over normal MOSFET operation is lower on-state voltage. The resistance provided by the conducting channel in an IGBT is too much smaller, leading to much higher current ratings than for an similar power MOSFET.

IGBTs are the best choice for switching current on and off in high power applications. IGBTs are made for use in power applications above 1kW, the point at which BJTs and standard MOSFETs reach their limits, switching at frequencies between 1kHz and 20 kHz. Low voltage applications (<600V) tend to be high volume consumer oriented, for example to control motor drives for washing machines. Key applications include automotive (electric vehicles), rail traction equipment and industrial motor drives, where operating voltages are higher – 1200V or 1700V are typical of the standard ranges available. In numerous applications, rather than using more than one discrete devices, IGBTs are associated into modules, to provide full circuits for particular power control.