Fuji Electric IGBT Distributor of 2MBI100N-060

2MBI100N-060 is an Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. It is manufactured by Fuji Electric.

The module has a maximum collector-emitter voltage of 600V and a maximum collector current of 100A. It has a low on-state voltage drop and high switching speed, making it suitable for high-frequency switching applications.

The 2MBI100N-060 is designed with a 6th-generation IGBT chip and an advanced diode for improved performance and efficiency. It also features a low-inductance module design for reduced switching losses and a longer lifespan.

The module is equipped with a thermistor for temperature monitoring and protection against over-temperature conditions. It also has a built-in driver and protection features such as short-circuit protection, over-current protection, and under-voltage lockout.

Overall, the 2MBI100N-060 is a reliable and high-performance IGBT module designed for a wide range of applications including motor drives, power supplies, renewable energy systems, and industrial equipment. It is also compact in size and can be easily mounted onto a heat sink for efficient cooling.

Westcode Semiconductor SW12CXC300 Rectifier Diode

SW12CXC300 is a rectifier diode designed for use in high-power applications such as power supplies, motor drives, and inverters.

Rectifier diodes are semiconductor devices that allow current to flow in only one direction, making them useful for converting AC power to DC power. They are commonly used in power electronics to convert and regulate voltage levels.

The SW12CXC300 rectifier diode has a maximum voltage rating of 300 volts and a current rating of 12 amps. It is designed for use in circuits that require high-speed switching and low forward voltage drop, which can help to improve efficiency and reduce heat generation.

The diode is housed in a compact and rugged package that is designed to withstand high temperatures and mechanical stress. It is also designed to be easy to install and replace, making it a convenient option for high-power applications.

Overall, the SW12CXC300 rectifier diode is a reliable and efficient option for converting and regulating voltage levels in high-power applications. It offers high-speed switching, low-forward voltage drop, and a compact and rugged package, making it a versatile and effective solution for a variety of industrial and commercial applications.

Semikron SKM400GB125D IGBT Distributor

SKM400GB125D is a high-power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high-power applications.

The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 400 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection.

The SKM400GB125D is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Overall, the SKM400GB125D IGBT module is a reliable and efficient solution for high-power applications, offering high voltage and high current capabilities, low switching losses, and built-in protection features for added safety and reliability. The increased maximum collector current rating compared to the SKM200GB125D allows for even higher power handling capabilities.

Semikron SKM100GB125DN IGBT Module

SKM100GB125DN is a high-power insulated-gate bipolar transistor (IGBT) module, which is a type of semiconductor device used for switching and amplifying electrical power in high-power applications.

The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1250 volts and a maximum collector current rating of 100 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection.

The SKM100GB125DN is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high power handling capabilities.

Overall, the SKM100GB125DN IGBT module is a reliable and efficient solution for high-power applications, offering high voltage and high current capabilities, low switching losses, and built-in protection features for added safety and reliability.

Semikron SCR Silicon Controlled Rectifier SKDT115-16

SKDT115-16 is a Silicon Controlled Rectifier (SCR) which is a type of semiconductor device used for controlling high-power electrical circuits by switching them on and off.

The SCR is a three-terminal device with a gate, an anode, and a cathode. When a positive voltage is applied to the gate, it triggers the device, allowing current to flow from the anode to the cathode. The SCR remains in the conducting state until the current flowing through it drops below a certain threshold.

The SKDT115-16 is a high-power SCR with a maximum average forward current rating of 115 amps and a peak repetitive off-state voltage rating of 1600 volts. It is designed to handle high voltage and high current applications, such as motor control, power supplies, and lighting control.

The device is also designed to operate at high temperatures, with a maximum junction temperature of 150°C. This makes it suitable for use in harsh environments where high temperatures are common.

Overall, the SKDT115-16 SCR is a reliable and efficient device for controlling high-power circuits, especially those that require high current and high voltage capabilities. It is commonly used in industrial and commercial applications where reliability and durability are essential.

Mitsubishi Intelligent Power Modules PM600DSA060

PM600DSA060 is a power module designed for high-power and high-voltage applications. It is commonly used in industrial applications such as motor drives, power converters, and renewable energy systems where high efficiency and reliability are required.

This module is based on a three-phase insulated gate bipolar transistor (IGBT) bridge configuration, which provides high power and high efficiency. It has a maximum voltage rating of 600 volts and a maximum current rating of 600 amps. The PM600DSA060 is designed with pulse width modulation (PWM) control, which enables precise control of the output voltage and current.

The PM600DSA060 power module is available in various package styles, including the popular dual in-line module (DIM) package. It is also designed with built-in protection features, such as over-voltage protection, over-current protection, and short-circuit protection, which helps ensure safe and reliable operation.

Overall, the PM600DSA060 power module is a reliable and efficient component that is widely used in high-power electronics applications. Its high voltage and current ratings, high efficiency, precise control capabilities, and built-in protection features make it an ideal choice for demanding applications that require high reliability and performance.

Mitsubishi Intelligent Power Modules PM300DSA120

 PM300DSA120 is an AC motor controller, also known as an AC drive or variable frequency drive.

This controller is designed to regulate the speed and torque of three-phase AC induction motors in a wide range of industrial applications. It is typically used in industries such as HVAC, water and wastewater, oil and gas, and manufacturing.

The PM300DSA120 has a maximum power output of 120 kilowatts (kW) and is capable of controlling motors with a voltage range of 380 to 480 volts. It has advanced control algorithms that enable it to optimize motor performance, energy efficiency, and reliability.

The controller is equipped with various safety features, such as short-circuit protection, overcurrent protection, and overvoltage protection. It also has built-in communication capabilities, allowing it to integrate with various control systems and networks.

Overall, the PM300DSA120 AC motor controller is a reliable and efficient solution for controlling AC induction motors in a variety of industrial applications. It offers advanced control algorithms, safety features, and communication capabilities, making it a versatile and high-performance option for controlling motor speed and torque.

Toshiba IGBT Module MG50Q6ES40

MG50Q6ES40 is an Insulated Gate Bipolar Transistor (IGBT) module designed for use in high-power applications such as motor drives, power supplies, and renewable energy systems.

IGBTs are power transistors that combine the high-speed switching performance of MOSFETs with the low conduction losses of bipolar transistors. They are commonly used in high-power applications because they can handle high voltage and current levels with minimal losses.

The MG50Q6ES40 IGBT module has a maximum voltage rating of 600 volts and a current rating of 50 amps. It consists of six IGBTs in a three-phase bridge configuration, which allows for efficient and precise control of AC motors.

The module also has a built-in diode that provides freewheeling current during the switching process, reducing stress on the IGBTs and improving efficiency. It is designed for use with a heat sink or other cooling system to dissipate the heat generated during operation.

Overall, the MG50Q6ES40 IGBT module is a high-performance and reliable option for high-power applications that require efficient and fast switching of high voltage and current levels. It offers a three-phase bridge configuration and built-in diodes, making it a versatile and effective solution for controlling AC motors in a variety of industrial and commercial applications.

IXYS Distributors - MCD162 16IO1 Thyristor Diode Module

MCD162 16IO1 is a dual IGBT (Insulated Gate Bipolar Transistor) module, which is a type of semiconductor device used for switching and amplifying electrical power in high-power applications.

The module consists of two IGBTs connected in a half-bridge configuration, with each IGBT having a collector-emitter voltage rating of 1600 volts and a maximum collector current rating of 162 amps. The module also includes a gate driver circuitry for controlling the IGBTs, as well as built-in protection features such as short-circuit and over-temperature protection.

The MCD162 16IO1 is designed for use in high-power applications, such as motor drives, power supplies, and renewable energy systems. It is optimized for high efficiency, with low switching losses and a low on-state voltage drop. The module also features a high thermal conductivity and low thermal resistance, which allows for efficient heat dissipation and high-power handling capabilities.

Overall, the MCD162 16IO1 IGBT module is a reliable and efficient solution for high-power applications, offering high voltage and high current capabilities, low switching losses, and built-in protection features for added safety and reliability. The dual IGBT configuration allows for flexibility in circuit design and increased power handling capabilities.

Infineon FZ2400R17KF6C-B2 from IGBT Distributor

FZ2400R17KF6C-B2 is a product code for a power module manufactured by Infineon Technologies AG, a German semiconductor manufacturer.

The power module is designed for use in industrial applications, particularly in motor drives and other high-power applications that require reliable and efficient power conversion. It is a six-pack IGBT (Insulated Gate Bipolar Transistor) module that integrates six IGBT power switches and six diodes, all of which are insulated from the heat sink.

The FZ2400R17KF6C-B2 module has a maximum collector-emitter voltage of 1700V, a maximum collector current of 2400A, and a maximum power dissipation of 12.8kW. It operates at a frequency range of up to 8kHz and has a low inductance design for high switching speed.

The module has a compact and robust design with a weight of 2.2kg and dimensions of 160mm x 140mm x 30mm. It also has a built-in temperature sensor for monitoring and protection against overheating.

Overall, the FZ2400R17KF6C-B2 power module is a high-performance and reliable solution for industrial power applications that require efficient and precise power conversion.

Infineon Distributor - IGBT Module FZ1600R12KE3

 FZ1600R12KE3 is an Insulated Gate Bipolar Transistor (IGBT) module designed for use in high-power applications such as motor drives, power supplies, and renewable energy systems.

IGBTs are power transistors that combine the high-speed switching performance of MOSFETs with the low conduction losses of bipolar transistors. They are commonly used in high-power applications because they can handle high voltage and current levels with minimal losses.

The FZ1600R12KE3 IGBT module has a maximum voltage rating of 1200 volts and a current rating of 1600 amps. It consists of two IGBTs in a half-bridge configuration, which allows for bidirectional power flow and efficient switching.

The module also has a built-in diode that provides freewheeling current during the switching process, reducing stress on the IGBTs and improving efficiency. It is designed for use with a heat sink or other cooling system to dissipate the heat generated during operation.

Overall, the FZ1600R12KE3 IGBT module is a high-performance and reliable option for high-power applications that require efficient and fast switching of high voltage and current levels. It offers built-in diodes and a half-bridge configuration, making it a versatile and effective solution for a variety of industrial and commercial applications.

Infineon IGBT Module FF1400R12IP4

 FF1400R12IP4 is a product code for an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies AG, a German semiconductor manufacturer.

The module is designed for use in high-power applications such as motor drives, renewable energy systems, and industrial automation. It contains one IGBT power switch and one anti-parallel diode.

The FF1400R12IP4 module has a maximum collector-emitter voltage of 1200V, a maximum collector current of 1400A, and a maximum power dissipation of 1.9kW. It operates at a frequency range of up to 20kHz and has a low inductance design for high switching speed.

The module has a compact and robust design with a weight of 1.2kg and dimensions of 190mm x 140mm x 30mm. It also has a built-in temperature sensor for monitoring and protection against overheating.

Overall, the FF1400R12IP4 module is a high-performance and reliable solution for high-power applications that require efficient and precise power conversion. It is suitable for use in a wide range of industrial and commercial applications where high power density, fast switching, and high reliability are required.