The Superiority of the IGBT over the MOSFET

The IGBT has the advantage over the MOSFET at higher switching frequencies. But at lower switching frequencies, the MOSFET has the lowest overall loss and the lowest operating junction temperature. (The selected IGBT and MOSFETs have approximately the same matrix sizes and thermal impedances.) This is somewhat contrary to conventional wisdom where it is often argued that MOSFETs perform better at higher switching frequencies. However, these results indicate otherwise and can be attributed mainly due to the significantly lower diode recovery loss component of the IGBT + FRD (fast recovery diode) and the significant improvement in minimizing the tail current behavior of the IGBT.

The lower switching loss of the IGBT + FRD due to a significantly lower diode recovery loss component gives it the advantage over the MOSFET at 20 kHz (a relatively high switching frequency for this application). In addition, the loss of switching of the MOSFET can be significantly reduced by the use of a gate controller with a greater supply capacity and sinking current (for example, a 2-A power supply controller / sinking current). As a result, the total losses of MOSFET would be reduced and would allow the MOSFET to close the gap between it and the IGBT. The resulting higher DV / dt, however, could cause undesirable effects such as high-frequency sounds and a higher level of irradiated EMI. Curiously, At lower switching frequencies where conduction loss dominates, the MOSFET benefits due to the absence of a "knee" in its forward characteristics, along with a relatively low RDS (on). While the IGBT remains the best device to select in this application example, the availability of significantly lower RDS (on) MOSFET along with better diode recovery behavior and a strong gate driver could start tilting the balance towards the MOSFET In that case, it would then reach a cost/performance ratio ("$ / Amp") with the IGBT probably having the edge due to a much higher current density (for a given die size).

Similar IGBTs and MOSFETs are often available for a given application. It is useful to clearly understand the advantages and limitations of both devices and choose the one that best suits the requirements in terms of overall performance and cost. While this is not an easy effort, greater familiarity with these energy devices will be beneficial in navigating these complex decisions.

Application Perspective

Given the wide availability of high voltage power IGBTs and MOSFETs with breaking voltage ratings of 500 to 800 V, designers often face the challenge of selecting an IGBT or MOSFET for a given application and a set of operating conditions. In the case of three-phase variable speed motor drives in the range of nominal powers from 300 W to 5 kW, using a DC bus voltage in the range of 300 to 400 V and typically implemented by a topology of six switches, The IGBT 600 to 650 V (co-packaged with an anti-parallel fast recovery diode) have traditionally been the preferred device from a global performance perspective. However, with the availability of high switching speed.

Overload and Short Circuit of IGBT and MOSFETS

Although the most modern generations of IGBTs tend to have more endurance capacity and an incidence of almost zero shutdown incidents, it is worth knowing what are the characteristics to avoid and how to recognize when one of these failures occurs in order to significantly prolong life of our IGBT or MOSFETS and when they do not give for more, know when to change them. Overload Essentially, the ignition and switching behavior of IGBTs and MOSFETs under overload does not differ from "standard operation" under nominal conditions. In order not to exceed the maximum junction temperature and to ensure safe operation, the overload range has to be restricted, since a higher charging current can cause a greater dissipation of energy in the device or the destruction of components such as diodes due to dynamic failure mode effects. Short circuit Essentially, IGBT and MOSFET are short-circuited proof, that is, they can be short-circuited under certain given conditions and actively deactivated without damaging the power semiconductors.

Hi-rel 1.2kV SiC Module Announced By Wolfspeed

Wolfspeed introduces SiC technology to outdoor systems in transportation and renewable energy. Wolfspeed has stretched its SiC power devices with the launch at PCIM 2017 of the industry’s inaugural power module that overcomes the tough environment qualification test for concurrent high-humidity, high-temperature and high-voltage situations. This reliableness benchmark allows system designers to utilize this device in outdoor applications such as transportation, wind, solar and other renewables where ultimate environmental conditions have traditionally challenged secure device operation. The latest all-SiC module, rated for 300 A and 1.2 kV blocking, was strained in an 85% relative humidity, 85 degrees celsius ambient while biased at 80% of rated voltage (960V). 

Accomplishment in tough situation testing under bias provides further confidence in the overall robustness of SiC device technology for all applications. “SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.” Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the tough environment test at the die level, the latest module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. 

Module construction uses high thermal conductivity aluminum nitride substrates and optimised assembly methods to meet industry thermal and power cycling requirements. “This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed’s chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.” Available under part number WAS300M12BM2, the latest module can be driven using existing Wolfspeed gate drivers for 62mm modules.

IGBT Modules Segmentation and Growth Factors

Currently, the market is facing an inevitable modernization, this includes IGBT modules that begin to replace ancient and rock appliances with the great technological wave and also SIMPLEZA that IGBT have, in this article we will explore two major factors: Global IGBT Market and Thyristors: Growth Due to the technology developed and the introduction of smart grids in the energy sector, the global market for IGBT and thyristors is expected to increase in the near future. However, the increase in population and the demand for a huge source of energy is expected to enhance market growth. IGBT and thyristor are used as power supplies, controllers and inverters in power electronics applications to meet the growing demand for solid state switching devices. 

The increasing number of families and nuclear infrastructure is expected to feed market demand in the future. IGBT and thyristors accommodate several advantages such as less MOSFET switching times and minimum switching losses to meet current electricity demands in the future. Global IGBT and Thyristor Market: Segmentation The global IGBT and thyristor market can be segmented based on the application as a flexible AC transmission system (FACTS) and HVDC. Of which, the application of flexible AC transmission system (FACTS) is the market leading segment, as it is used for congestion management, voltage stabilization, frequency stabilization; Maintain control of power flow and stability, and others. Other application segment is sub-segmented as EV / HEV, renewable energy, liquid level regulator, transport, light regulator, pressure control, motor controls, etc.

Power management applications get latest 1700V and 2500V XPT™ IGBTs launched by IXYS

IXYS Corporation, a leading maker of power semiconductors and ICs for power management, energy efficiency and motor control applications announced the 1700V and 2500V XPT™ IGBTs for power management applications. The current ratings of the new devices range from 26A to 178A and these are perfect for high-voltage (“HV”), high-speed power conversion applications. Devices which are packed together with anti-parallel fast diodes are also available. 

IXYS has an enriched history of presenting cutting edge, state-of-the-art IGBTs and had introduced the HV IGBT outline and applications in power management particularly in the transportation, medical and manufacturing markets. Designed by utilizing the patented IXYS Extreme-Light Punch-Through (XPT™) technology and the leading edge IGBT processes, these latest devices characteristics such as lessened thermal resistance, little tail current, little energy loss, and fast switching capacity. Also, the positive temperature coefficient of their on-state voltage gets credit, the latest high-voltage IGBTs can be used in parallel, which provides cost-efficient solutions compared to series-connected, lower-voltage device ones. This therefore results in diminishing in the related gate drive circuitry, simplicity in design, and advancement in the reliableness of the overall system.

The non-compulsory co-packed fast recovery diodes have less reverse recovery time and are designed to generate smooth switching waveforms and notably lower electromagnetic interference (EMI). A significant number of high-voltage (“HV”), high-speed power management applications that can get advantage from using these IGBTs. Among them are HV converters, inverters, power pulse circuits, laser and X-ray generators, HV power supplies, HV test equipment, capacitor discharge circuits, medical switching applications, HV circuit protection, and HV AC switches. 

The new XPT™ IGBTs are found in the following international standard size packages: SOT-227, TO-247, PLUS247, ISOPLUS i5-Pak™, TO-247HV, TO-247PLUS-HV, and TO-268HV. The latter three have increased creepage distances between leads, making them sturdy against provoked voltages. Some example part numbers include IXYH24N170C, IXYN30N170CV1, IXYH30N170C, and IXYH25N250CHV, with collector current ratings of 58A, 88A, 108A, and 95A, respectively.

IGBTs for Fast Switching, High Current and High Voltage

Prior to the evolution of the IGBT, power electronics engineers had two kinds of devices for fast and higher frequency switching – the Bipolar Junction Transistor (BJT) and the Metal Oxide Field Effect Transistor (MOSFET). Both could switch at higher frequencies than Thyristors (or SCRs). However, either had some limits. MOSFETS provided high switching speeds, yet high voltage and high current plans were comparatively steep, while BJTs were available in high voltage and high current designs, however, offered lower exchanging speeds to some extent. Insulated Gate Bipolar Transistors (IGBTs) are switching devices with three terminals, which could successfully be deliberated to consist of an insulated gate N-channel MOSFET associated with a PNP Bipolar Junction Transistor.

The IGBT unites the high voltage and current capacity of the BJT with the voltage control attributes of a MOSFET which allow higher frequency switching. The IGBT has three connections, Emitter, Gate and Collector. The conduction path is through the Collector and Emitter. Identical to a Thyristor, the IGBT allows controlled current to go through when a signal is recognized at the Gate. A thyristor is “current” and switches “ON” when a pulse is given to the Gate. The IGBT is controlled by voltage, allowing conduction when a positive voltage is there on the Gate, and only switch “OFF” when the voltage is reduced to zero, or ideally, driven negative. The output current and voltage attributes are the same as the BJT, but driving the device using the voltage control of the MOSFET facilitates the switching. Another significant convenience over normal MOSFET operation is lower on-state voltage. The resistance provided by the conducting channel in an IGBT is too much smaller, leading to much higher current ratings than for a similar power MOSFET. IGBTs are the best choice for switching current on and off in high power applications.

IGBTs are made for use in power applications above 1kW, the point at which BJTs and standard MOSFETs reach their limits, switching at frequencies between 1kHz and 20 kHz. Low voltage applications (<600V) tend to be high volume consumer-oriented, for example, to control motor drives for washing machines. Key applications include automotive (electric vehicles), rail traction equipment and industrial motor drives, where operating voltages are higher – 1200V or 1700V are typical of the standard ranges available. In numerous applications, rather than using more than one discrete devices, IGBTs are associated into modules, to provide full circuits for particular power control.

IXYS UK Westcode Introduce It’s Greatest Ever Current Rating IGBT

IXYS UK Westcode has today introduced the maximal true current rating press-pack IGBT available that is set to break new ground in power handling capability of an individual device. The latest symmetric blocking device with an incessant DC rating of 2.8Kv has an unprecedented DC current of 6000A. The latest device has been aided by IXYS UK’s comprehensive expertise in making and understanding the principles of very big press-pack IGBTs with more than one parallel die. The recently developed 4.5Kv devices include vindicated SPT plus die technology and are built using 52 parallel-connected IGBT die, 10 more than the biggest established part with a current rating of 2400A at the same 4.5Kv blocking voltage. Every die is 14.3mm square with an active area of nearly one centimeter squared. The latest device encapsulated in completely sealed 26mm thick with a 132mm electrode diameter, bigger than the traditional 2400A device, but keep up the similar 170mm in-total diameter as the 42 die design; this provides an effective 25% more current rating in the same package.

The sturdy internal development is without bond with the single die straight away pressure contacted through metallic pressure plates to the outside copper electrodes. The outright bond free contact confirms maximum reliability and unparalleled thermal cycling properties, far exceeding those of a conventionally packaged plastic package module. In particular, the short circuit failure mode makes these devices the obvious choice for applications requiring a series operation, such is the case in utilities, HVDC and very large medium voltage drives. The unrivaled current rating can also reduce the number of parallel paths required in very high current applications in the multi megawatts range. Generally, these devices are well suited to harsh environments and where maintenance access is difficult such as off-shore marine and wind. The hermetic structure and high rupture resistance are properties which are particularly relevant in harsh environments where explosive failure and plasma leak are unacceptable, such as mining, gas and oil installation. The package design is based on IXYS UK’s proven technology, with the same conveniences of enhanced rupture capability, resisting more than ten times the short circuit energy of a conventional plastic packaged module device and the additional advantage that the device is virtually guaranteed to fail to a stable short circuit. These unique properties make the new device an ideal solution where high reliability, maximum power density, and predictable failure are important. To facilitate the application of this new higher-rated press-pack IGBT, IXYS UK Westcode has also launched a new complementary diode in its range of very high di/dt HP Sonic FRDs. This new diode is constructed using a new die bonding technology to maximize reliableness. Packaged in an 85mm electrode 26mm thick package the diode is pressure compatible with the press-pack IGBT so it can be mounted in the same series string for compact three-level inverter configurations.

Part number designations for this reverse conduction press-pack IGBTs is T2960BB45E & the compatible HP Sonic FRD is part number E3000TC45E. Typical applications for these devices include: utilities and HVDC applications such as, flexible AC transition systems, HVDC transition, Statcoms, VSC SVC etc; medium voltage AC drives for harsh environments and ultra-high power, such as mining, marine, and offshore g, gas, and oil installations; renewable energy for wind turbines, hydro generation, wave generation and solar; plus, any application where high power density and reliableness is necessary.

CM100TJ-24F Mitsubishi IGBT Power Module

CM100TJ-24F is the best choice to boost the performance level of your Battery Powered Supplies. Manufactured by Mitsubishi, this IGBT power transistor module weighs 0.66 lbs. with a collector current amount of 100A and a collector-emitter of 1200V.

Each module of Mitsubishi CM100TJ-24F consists of six IGBT Transistors in a three-phase bridge configuration. The transistors are all hardwired with reverse connected super-fast recovery free-wheel diode.

In addition, CM100TJ-24F’s components and interconnects are isolated from the heat sinking baseplate, allowing the module to have a simplified system assembly and efficient thermal management.

Other special features are the module’s Low Drive Power and Low VCE (sat) configurations. With these components, expect your Battery Powered Supplies to transform into a superior unit.

High-efficiency, cost-effectiveness, and durability are three benefits your equipment can gain from CM100TJ-24F. Upgrade your Battery Powered Supplies now!

https://www.youtube.com/watch?v=3SytrbXcXJE