Assuming the point of
interest is power MOSFETS and not small signal MOSFETS and silicon (as oppose
to SiC, GaN).
Be aware that some IGBT
drivers also include a negative turn-off voltage (for faster switching).
The first characteristic
to check is the output voltage. For power devices they should be 0V to 12-15V
(acpl-312T) to cater for gate thresholds around 4V (as well as being able to
drive to -15V if miller turn-on is a concern). As such a MOSFET driver driving
an IGBT & equally an IGBT driver driving a MOSFET should be fine.
The next characteristic
is peak current. IGBT's will have significantly larger gate capacitance and as
such will require higher peak currents to ensure the device saturates as quick
as possible. The converse of this is MOSFET's can be switched faster and as
such the rms current demand to drive a MOSFET might be higher.
Higher current or higher
switching frequency affects the driver power capability.
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