Buy Fuji Electric IGBT Power Transistor Modules and Power Semiconductor

Buy Fuji Electric IGBTs!

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Fuji has come a long way to become the giant electrical company it is today. Fuji, a spinoff company from Siemens, manufactures a multitude of electrical equipment and amongst it all are IGBTs. The IGBT is a high performance 6th generation IGBT/FWD chipset with a compact design that provides for greater power output. It has environmentally friendly modules with easy assemblage, solder-free options, and RoHS compliance. The IGBT turn-on switching characteristics include: improved noise-loss trade-off, reduced turn-on dv/dt, and excellent turn-on dic/dt. Turn-off switching characteristics include: soft switching behavior and turn-off oscillation free.

In 2006 Fuji Electric achieved world-leading level of power loss reduction and down-sizing “New Dual”, a New Product Line of Fifth Generation Fuji IGBT Modules U4 Series.

In 2008 Fuji Electric released New Fuji IGBT Module for High-capacity Industrial Equipment, a new product has been added to the line-up using FDT’s fifth generation IGBT, U4 series

In 2010 Fuji Electric released New Fuji High-Power 2-in-1 IGBT Module Series Designed for Parallel Connections

In 2011 Fuji Electric released New New V-Series Intelligent Power Modules Fuji IGBT Equipped with 6th-Generation IGBT Chips and Capable of the Highest Efficiency in the Industry

In 2011 Fuji Electric released New Fuji IGBT Module for Advanced Neutral Point Clamped (NPC) Circuits Series World’s First Module with a 3-Level Platform in a Single Package

In 2012 Fuji Electric announced it has developed EasyPIMTM insulated gate bipolar transistor (Fuji IGBT) modules fitted with 6th-generation IGBT chips and plans to commence a sales release of this new product lineup.

In 2012 Fuji Electric released a New high-speed, low-loss, Fuji IGBT Module output type intelligent power module incorporating various protective functions, and completed a product series

In 2012 Fuji Electric developed a chip which is constructed such that a Ni-plating electrode is formed on its surface electrodes. 2nd-generation IGBT chips feature an optimized surface trench cell structure, and employ a new field stop structure. Diode chips incorporate an optimized anode layer structure and utilize FZ wafers to improve forward characteristics and improve chip reliability. These improvements make it possible to reduce Fuji IGBT and diode chip sizes, increase system output, and facilitate miniaturization.

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