QM200E2Y-HB Mitsubishi IGBT Module

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QM200E2Y-HB is one of the best innovations of Mitsubishi IGBT modules that’s perfect to power up various inverters. With the combined features of a BJT and MOSFET module, QM200E2Y-HB can enhance the performance of inverters and function beyond the limit without compromising the system. With a light weight of 1.04 lbs., this device can give 1200 output voltage.

QM200E2Y-HB has its own freewheeling diode to get rid of flybacks during the induction loading process. Its own components and other parts have been isolated from heat sinking baseplates to attain a simplified construction and design.

To ensure that the current rating won’t wear off, Mitsubishi QM200E2Y-HB has been equipped with square RBSOA. To enhance durability and efficiency, this Mitsubishi IGBT module has low saturation voltage, overcurrent limiting function that’s three times better than the usual rate, and a three dimensional power semiconductor device. These aspects enable QM200E2Y-HB to fully function even on high frequency operations!

Buy FZ400R12KE3S Eupec Infineon IGBT Module

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For the right boost of power for all your induction heaters, you need FZ400R12KE3S! This 62-mm single switch semiconductor can release power of up to 1200V or 400A at only 2.2lbs.. What’s more, this Eupec Infineon IGBT module focuses on high speed level switching topologies which optimize switching losses. It can withstand various temperatures, even as high as 150 oC, as it assures as much as 20% of lower switching losses. RoHS compliant and UL recognized, FZ400R12KE3S is guaranteed safe to use. 

This powerful, reliable and cost-efficient Eupec Infineon IGBT module comes at a very reasonable price that can be used with other applications and machineries such as, Motor Drives (AC and DC), Wind converters, Commercial, agriculture and construction vehicles (CAVs), Uninterruptible power supply (UPS) and Welding machines.

Buy Fuji Electric IGBT Power Transistor Modules and Power Semiconductor

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Fuji has come a long way to become the giant electrical company it is today. Fuji, a spinoff company from Siemens, manufactures a multitude of electrical equipment and amongst it all are IGBTs. The IGBT is a high performance 6th generation IGBT/FWD chipset with a compact design that provides for greater power output. It has environmentally friendly modules with easy assemblage, solder-free options, and RoHS compliance. The IGBT turn-on switching characteristics include: improved noise-loss trade-off, reduced turn-on dv/dt, and excellent turn-on dic/dt. Turn-off switching characteristics include: soft switching behavior and turn-off oscillation free.

In 2006 Fuji Electric achieved world-leading level of power loss reduction and down-sizing “New Dual”, a New Product Line of Fifth Generation Fuji IGBT Modules U4 Series.

In 2008 Fuji Electric released New Fuji IGBT Module for High-capacity Industrial Equipment, a new product has been added to the line-up using FDT’s fifth generation IGBT, U4 series

In 2010 Fuji Electric released New Fuji High-Power 2-in-1 IGBT Module Series Designed for Parallel Connections

In 2011 Fuji Electric released New New V-Series Intelligent Power Modules Fuji IGBT Equipped with 6th-Generation IGBT Chips and Capable of the Highest Efficiency in the Industry

In 2011 Fuji Electric released New Fuji IGBT Module for Advanced Neutral Point Clamped (NPC) Circuits Series World’s First Module with a 3-Level Platform in a Single Package

In 2012 Fuji Electric announced it has developed EasyPIMTM insulated gate bipolar transistor (Fuji IGBT) modules fitted with 6th-generation IGBT chips and plans to commence a sales release of this new product lineup.

In 2012 Fuji Electric released a New high-speed, low-loss, Fuji IGBT Module output type intelligent power module incorporating various protective functions, and completed a product series

In 2012 Fuji Electric developed a chip which is constructed such that a Ni-plating electrode is formed on its surface electrodes. 2nd-generation IGBT chips feature an optimized surface trench cell structure, and employ a new field stop structure. Diode chips incorporate an optimized anode layer structure and utilize FZ wafers to improve forward characteristics and improve chip reliability. These improvements make it possible to reduce Fuji IGBT and diode chip sizes, increase system output, and facilitate miniaturization.

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